KR100280879B1 - Manufacturing Method of Dielectric Thick Film for Plasma Display and Lamp Heating Furnace - Google Patents

Abstract

The present invention relates to a method of manufacturing a dielectric thick film for a plasma display device that prevents thermal deformation and cracking of a glass substrate.

In the method of manufacturing a dielectric thick film for plasma display device according to the present invention, a first step of forming a mixed powder by mixing the amorphous glass powder and the filler powder for a predetermined time, and a second to form a paste by mixing the mixed powder and the organic solvent And a third step of applying the paste to the substrate at a predetermined thickness, and a fourth step of sintering the paste-coated substrate by lamp heating to form a dielectric thick film.

This prevents thermal deformation and cracking of the glass substrate and improves the crystallinity of the dielectric thick film.

Description

Method of Fabricating Dielectric Thick Layer for Plasma Display Panel and Apparatus of Lamp Heating Furnace

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma display device, and more particularly, to a method for manufacturing a dielectric thick film for a plasma display device and a lamp heating furnace for preventing thermal deformation and cracking of a glass substrate.

Recently, Liquid Crystal Display (hereinafter referred to as "LCD"), Field Emission Display (hereinafter referred to as "FED") and Plasma Display Panel (hereinafter referred to as "PDP") Flat display devices such as PDP have been actively developed. Among them, PDP is easy to manufacture due to its simple structure, high brightness and high luminous efficiency, memory function, and has a wide viewing angle of 160 ° or more, and realizes a large screen of 40 inches or more. It has the advantage of being able to.

Referring to FIG. 1, a PDP according to the related art includes a rear glass plate 14 having an address electrode 2 mounted thereon, a dielectric thick film 18 applied on an upper portion of the rear glass plate 14 to charge electric charges, and a dielectric material. A partition 8 formed on the thick film 18 to divide each discharge cell, a phosphor 6 excited and emitted by light generated by plasma discharge, and a transparent formed on the front glass plate 16; A dielectric thick film 12 that is applied to the electrode 4, the front glass plate 16, and the transparent electrode 4 to a predetermined thickness to charge an electric charge, and a protective film coated on the dielectric thick film 12. (10) is provided. When a predetermined driving voltage (for example, 200V) is applied to the address electrode 2 and the transparent electrode 4, plasma discharge is caused by electrons emitted from the address electrode 2 inside the discharge cell. In detail, the electrons emitted from the electrode collide with the atoms of the He + Xe gas or the Ne + Xe gas enclosed in the discharge cell to ionize the atoms of the gas, and the emission of the secondary electrons occurs. Repeats collisions with atoms in the gas, ionizing atoms in turn. In other words, they enter the avalanche process, where electrons and ions double. The light generated in the avalanche process is excited to emit red (Red; " R "), green (hereinafter, " G "), and blue (" B ") phosphors. The light of R, G, and B emitted from the phosphor proceeds to the front glass plate 16 to display characters or graphics. On the other hand, the dielectric thick film 18 will be described in detail, in order to maintain the discharge and improve the luminous efficiency and to function as a diffusion barrier, the dielectric thick film 12 has a high visible light reflectance, low thermal expansion coefficient and thermal stability, high Characteristics such as firing temperature, high dense structure and low dielectric constant are required. To this end, low temperature crystallized glass is sintered in a kiln to form a dielectric thick film.

2, a flowchart of a method of manufacturing a dielectric thick film according to the prior art is shown.

The amorphous glass powder and the filler powder are mixed. (Step 21) The mixing is performed for a predetermined time (for example, 10 hours) in a tumbling mixer according to the composition ratio of the amorphous glass powder and the filler powder. The mixed powder and the organic solvent are mixed to form a paste. (Step 22) A paste is formed by mixing a powder mixed with an amorphous glass powder and a filler powder according to the composition ratio with an organic solvent. do. The paste is applied to the glass substrate (Step 23). The paste is screen printed onto the glass substrate and applied to a uniform thickness of 15-20 μm. The paste-coated glass substrate is sintered by a resistive heating method (Step 24). The paste-coated glass substrate is subjected to a heat treatment in a batch or in-line heat treatment furnace. Sintering 20-30 minutes at a temperature of 350-400 ° C. will completely burn the organics in the paste. After the organic material in the paste is completely erased, the glass substrate is heated to the crystallization temperature, heated for 20-30 minutes to crystallize, and the dielectric substrate is formed by cooling the glass substrate for 40 minutes at a cooling rate of 6 ° C. The maximum sintering temperature of the dielectric thick film by the resistance heating method is maintained below 600 ℃ to minimize the thermal deformation of the soda-lime glass substrate on which the dielectric thick film is formed.

However, the sintering method using the heat treatment furnace of the resistance heating method as described above has been derived a problem that the thermal deformation and cracking of the soda lime glass substrate due to the decrease in thermal efficiency, the non-uniformity of the parent glass crystallinity, the non-uniformity of the temperature gradient.

Accordingly, an object of the present invention is to provide a method for manufacturing a dielectric thick film for a plasma display device and a lamp heating furnace which prevents thermal deformation and cracking of a glass substrate and improves the crystallinity of the dielectric thick film.

1 is a view showing the structure of a plasma display device according to the prior art.

2 is a flowchart illustrating a method of manufacturing a dielectric thick film according to the prior art.

3 is a view showing a heat treatment furnace of the lamp heating method according to the present invention.

4 is a flowchart illustrating a method of manufacturing a dielectric thick film according to the present invention. <Description of the code | symbol about the principal part of drawing>

2: address electrode 4: transparent electrode

6: phosphor 8: partition wall

10: protective film 12,18: dielectric thick film

14: rear glass plate 16: front glass plate

42: upper lamp 44: lower lamp

46: upper reflector 48: substrate support

50: lower reflector 52: feeder

54: glass substrate

In order to achieve the above object, a method of manufacturing a dielectric thick film for a plasma display device according to the present invention includes a first step of forming a mixed powder by mixing an amorphous glass powder and a filler powder for a predetermined time, by mixing a mixed powder and an organic solvent. A second step of forming a paste, a third step of applying the paste to a substrate at a predetermined thickness, and a fourth step of sintering the paste-coated substrate by lamp heating to form a dielectric thick film.

The lamp heating furnace which concerns on this invention is equipped with the board | substrate support part which supports a board | substrate, the upper heating part which consists of a lamp which heats the upper part of a board | substrate, and the lower heating part which consists of a lamp which heats the lower part of a board | substrate.

Other objects and features of the present invention other than the above object will become apparent from the description of the embodiments with reference to the accompanying drawings.

3 to 4 will be described with respect to the preferred embodiment of the present invention.

Referring to FIG. 3, the lamp heating furnace according to the present invention includes an upper lamp 42 positioned above the glass substrate 54 to generate heat, and an arch type above the upper lamp 42. An upper reflector 46 for reflecting the heat of the upper lamp 42, a transfer device 52 coupled to the upper reflector 46 to move the upper lamp 42, and the glass substrate 54. A lower lamp 44 positioned at a lower portion of the lower lamp 44 to generate heat; a substrate support 48 supporting the glass substrate 54; and a lower lamp 44 mounted at a lower portion of the lower lamp 44; It has a lower reflector 50 for reflecting. When the glass substrate 40 is inserted into the lamp heating furnace, the upper lamp 42 and the lower lamp 44 are operated at the same time so that the infrared rays generated from the upper and lower lamps 42 and 44 are applied to the entire glass substrate 40. It is evenly transmitted to remove the temperature gradient of the entire glass substrate. The upper lamp 42 and the lower lamp 44 preferably employ a tungsten-halogen lamp having a predetermined capacity (for example, 2KW). In addition, the upper reflector 46 and the lower reflector 50 use stainless steel to increase the heating effect, 304 stainless steel is preferred as the material of the stainless steel. In addition, the upper reflector 46 forms a reflecting wing 46a extending from the arcuate body to increase the reflection efficiency of heat. The tungsten-halogen lamps 42 and 44 and the reflectors 46 and 50 are cooled by water or air cooling, respectively, to prevent overheating. In addition, it is preferable that the board | substrate support part 48 uses the quartz plate which has a predetermined thickness (for example, 5 mm). Meanwhile, the method of heating the glass substrate 54 will be described. The upper lamp 42 and the lower lamp 44 are fixed, the glass substrate 54 is transported and heated, and the lower lamp 44 is fixed. There is a method of heating the glass substrate 54 by transferring the upper lamp (42). At this time, when the upper lamp 42 is transferred to heat the glass substrate 54, the upper lamp 42 is transferred by the transfer device 52 mounted on the upper reflector 46.

4, a method of manufacturing a dielectric thick film according to the present invention is shown.

The amorphous glass powder and the filler powder are mixed (step 31). The amorphous glass powder and the filler powder are mixed in a tumbling mixer for a predetermined time (for example, 10 hours) according to the composition ratio. The powder and the medium are mixed to form a paste. (Step 32) A powder obtained by mixing the amorphous glass powder and the filler powder according to the composition ratio is mixed with the medium to form a paste. At this time, BCA (Butyl-Carbitol-Acetate; "BCA"), BC (Butyl-Carbitol; "BC") and EC (Ethyl-Cellulose; "EC") A mixed organic solvent is used, and the viscosity of the paste is changed by the amount of EC, which affects rheology and sintering characteristics. The mixing ratio of EC, BC and BCA is adjusted so that the viscosity of the paste is 50000 CPS. The paste is applied to the glass substrate 54 (step 33). The paste is screen printed onto the glass substrate 54 and coated with a uniform thickness of 15-20 탆. The paste-coated glass substrate 54 is sintered by a lamp heating method (step 34). The heat treatment of the glass substrate 54 is performed in the air to eliminate organic substances in the paste. In detail, first, the glass substrate 54 is mounted in the lamp heating furnace. In order to eliminate the temperature gradient, the upper lamp 42 and the lower lamp 44 are operated simultaneously and heated for a predetermined time (for example, 15 minutes) to raise the temperature of the entire glass substrate 54 to 350-400 ° C., The temperature is maintained for a predetermined time (for example, 30 minutes) to burn off the organic material in the paste. After the organic matter in the paste is erased, the output of the upper lamp 42 and the lower lamp 44 is increased (0.8-1.0 Kw) to raise the temperature up to 600 ° C. or less within the crystallization temperature of the glass substrate 54. 20-30 minutes is heated to the elevated temperature to complete the crystallization of the dielectric thick film. The glass substrate 54, which has completed the crystallization of the dielectric thick film, is cooled by cooling the substrate while reducing the output of the lamp over a predetermined time (for example, one hour) to form a dielectric thick film. At this time, the crystallization temperature of the dielectric thick film is determined by DTA (Differential Thermal Analysis) analysis on the mixed powder.

As described above, in the method for manufacturing the dielectric thick film according to the present invention, the temperature gradient is removed from the entire glass substrate by simultaneously operating the upper lamp and the lower lamp by adopting a lamp heating method during the sintering process of the glass substrate. Therefore, it is possible to prevent thermal deformation and cracking of the glass substrate and to improve the crystallinity of the dielectric thick film.

In addition, in the sintering process of the glass substrate by using a stainless steel material of the upper reflector and the lower reflector has the advantage that the heating effect is increased to improve the thermal efficiency.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. For example, in heating the entire glass substrate, the glass substrate may be transported and heated while the upper lamp and the lower lamp are fixed, and the upper lamp may be transported and heated while the lower lamp and the glass substrate are fixed. You will see.

Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

Claims (10)

A first step of mixing the amorphous glass powder and the filler powder for a predetermined time to form a mixed powder, A second step of mixing the mixed powder and an organic solvent to form a paste, and applying the paste to a substrate to a predetermined thickness And a fourth step of forming a dielectric thick film on the substrate by sintering the paste by heating the substrate to which the paste is applied using lamps installed on each of the upper and lower portions of the substrate. A method of manufacturing a dielectric thick film for a plasma display device. The method of claim 1, wherein the sintering of the paste comprises: removing the organic material included in the paste by heating the substrate on which the paste is applied to a predetermined first temperature, and adjusting the temperature of the substrate to the first temperature. And crystallizing the dielectric contained in the paste by raising the temperature to a higher second temperature, and cooling the substrate. The method of manufacturing a dielectric thick film for a plasma display device according to claim 2, wherein, when the substrate is heated, lamps are installed at upper and lower portions of the substrate, and the substrate is heated while transferring lamps positioned above the substrate. . An apparatus for manufacturing a plasma display panel in which a dielectric thick film is formed on a substrate, comprising: a substrate support for supporting a substrate on which a dielectric thick film paste in which an organic solvent is mixed is mixed with a glass powder and a filler powder; an upper portion of the substrate; And a lower heating portion for heating the entire surface of the substrate on which the paste is formed, and a lower heating portion for heating the rear surface of the substrate, the lamp heating furnace for producing a dielectric thick film of a plasma display panel. The lamp heating furnace of claim 5, further comprising a transfer unit for transferring the upper heating unit. 5. The lamp heating furnace of claim 4, further comprising an upper reflector installed on the upper heating unit to reflect light generated from the upper heating unit toward the substrate. 5. The lamp heating furnace of claim 4, further comprising a lower reflector disposed below the lower heating unit to reflect light generated from the lower heating unit toward the substrate. 6. The lamp heating furnace of claim 4, wherein the upper and lower heating parts comprise a tungsten-halogen lamp. 8. The lamp heating furnace of claim 6 or 7, wherein the reflector is made of stainless steel. 5. The lamp heating furnace of claim 4, further comprising cooling means for preventing overheating of the upper and lower heating parts.