KR100273245B1 - Apparatus for coating semiconductor wafer - Google Patents

Apparatus for coating semiconductor wafer Download PDF

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Publication number
KR100273245B1
KR100273245B1 KR1019970066510A KR19970066510A KR100273245B1 KR 100273245 B1 KR100273245 B1 KR 100273245B1 KR 1019970066510 A KR1019970066510 A KR 1019970066510A KR 19970066510 A KR19970066510 A KR 19970066510A KR 100273245 B1 KR100273245 B1 KR 100273245B1
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KR
South Korea
Prior art keywords
wafer
photosensitive liquid
photoresist
coating apparatus
semiconductor wafer
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KR1019970066510A
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Korean (ko)
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KR19990047932A (en
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정만우
이강열
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김영환
현대반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

PURPOSE: A wafer coating apparatus is provided to enhance the uniformity of a photoresist coated on a wafer by decreasing the volatilization of the photoresist. CONSTITUTION: The wafer coating apparatus comprises a wafer chuck(12) for loading a wafer, a spindle(13) for rotating the wafer chuck(12), a photoresist spray nozzle(11) for spraying photoresist solutions into the wafer, and a sealed chamber(10). By saturating the sealed chamber(10) with processing gases, such as H2O, CH3 and NH3 etc., the uniformity of the photoresist solutions coated on the wafer increases by preventing the volatilization of the photoresist.

Description

반도체 웨이퍼 코팅장치Semiconductor Wafer Coating Equipment

본 발명은 반도체 웨이퍼 코팅장치에 관한 것으로, 특히 반도체 제조공정 중 웨이퍼의 표면을 평탄화시키는데 적합한 감광액 코팅장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer coating apparatus, and more particularly to a photoresist coating apparatus suitable for planarizing the surface of a wafer during a semiconductor manufacturing process.

일반적으로 반도체 웨이퍼 제조공정 중 포토공정, 에칭공정 및 증착공정을 진행한 후에 층간절연과 평탄화를 위하여 코팅공정을 실시하는데, 이에 따른 종래의 기술을 설명하면 다음과 같다.In general, a coating process is performed for interlayer insulation and planarization after a photo process, an etching process, and a deposition process in a semiconductor wafer manufacturing process, which will be described below.

제1도는 종래의 반도체 웨이퍼 코팅장치를 보인 개략도로서, 이에 도시된 바와같이, 종래의 감광액 코팅장치는 일정량의 감광액 용액을 수용하는 감광액 공급용기(미도시)와 그 공급용기에 연결 형성되어 웨이퍼(W)에 감광액 용액을 공급하는 감광액공급라인(1)과, 그 감광액공급라인(1)의 소정 거리 하부에 설치되며 웨이퍼(W)를 안착시키기 위한 웨이퍼척(2)과, 그 웨이퍼척(2)의 저면에 연결 설치되어 상기 웨이퍼척(2)을 회전시켜 웨이퍼(W) 전체에 감광액을 균일하게 도포하는 회전스핀들(3)로 구성되어 있다.1 is a schematic view showing a conventional semiconductor wafer coating apparatus. As shown in the drawing, a conventional photosensitive liquid coating apparatus is formed by connecting a photosensitive liquid supply container (not shown) containing a predetermined amount of a photosensitive liquid solution to a supply container and a wafer ( A photosensitive liquid supply line 1 for supplying a photosensitive liquid solution to W), a wafer chuck 2 for mounting a wafer W, which is installed below a predetermined distance of the photosensitive liquid supply line 1, and the wafer chuck 2 It is connected to the bottom of the () is composed of a rotating spindle (3) for rotating the wafer chuck (2) to uniformly apply the photosensitive liquid to the entire wafer (W).

미설명부호 (T)는 웨이퍼에 증착된 산화막(TEOS:Tetra-ethyl-orthosilicate)이고, (C)는 웨이퍼에 코팅된 감광액이다.Reference numeral T denotes an oxide film (TEOS: Tetra-ethyl-orthosilicate) deposited on the wafer, and (C) denotes a photosensitive liquid coated on the wafer.

이와 같이 구성된 종래 반도체 웨이퍼 코팅장치의 작동에 대해서 설명하면 다음과 같다.Referring to the operation of the conventional semiconductor wafer coating apparatus configured as described above are as follows.

일정량의 감광액이 수용된 감광액 공급용기로부터 감광액 분사노즐(1)을 통해 웨이퍼에 감광액을 공급하면, 상기 웨이퍼를 지지하고 있는 웨이퍼척(2)이 구동모터에 연결 설치된 스핀들(3)에 의해 소정의 속도로 회전하게 됨으로써, 그 원심력에 의해 웨이퍼(W)에 공급된 감광액은 웨이퍼(W) 전면에 도포된다.When the photosensitive liquid is supplied to the wafer through the photosensitive liquid injection nozzle 1 from the photosensitive liquid supply container accommodating a certain amount of the photosensitive liquid, the wafer chuck 2 supporting the wafer is connected to the driving motor by a spindle 3 provided at a predetermined speed. As a result, the photosensitive liquid supplied to the wafer W by the centrifugal force is applied to the entire surface of the wafer W.

그러나, 상기와 같은 종래의 기술은 감광액공급라인(1)으로부터 웨이퍼(W) 중앙에 감광액을 공급한 후 회전스핀들(3)의 원심력에 의해 웨이퍼(W)를 회전시켜 감광액을 도포하는 방식으로, 제2도에 도시된 바와 같이 상온에서 코팅공정 진행중에 감광액의 휘발이 발생하여 감광액의 웨이퍼에서의 표면 유동성을 약화시켜 웨이퍼의 평탄화를 저해하는 문제점이 있었다.However, in the conventional art as described above, after the photosensitive liquid is supplied from the photosensitive liquid supply line 1 to the center of the wafer W, the photosensitive liquid is applied by rotating the wafer W by the centrifugal force of the rotary spindles 3. As shown in FIG. 2, volatilization of the photoresist occurs during the coating process at room temperature, thereby weakening the surface fluidity of the photoresist on the wafer, thereby preventing flattening of the wafer.

따라서, 본 발명은 상술한 종래의 문제점을 해결하기 위하여 안출된 것으로, 코팅공정이 진행되는 동안 감광액의 휘발을 방지하여 웨이퍼의 평탄도를 향상시키는데 적합한 반도체 웨이퍼 코팅장치를 제공하는데 그 목적이 있다.Accordingly, an object of the present invention is to provide a semiconductor wafer coating apparatus suitable for improving the flatness of a wafer by preventing volatilization of the photoresist during the coating process.

제1도는 종래 반도체 웨이퍼 코팅장치를 보인 개략도.1 is a schematic view showing a conventional semiconductor wafer coating apparatus.

제2도는 종래 기술에 의한 웨이퍼에 코팅된 상태를 보인 상태도.2 is a state showing a state coated on the wafer according to the prior art.

제3도는 본 발명에 의한 반도체 웨이퍼 코팅장치를 보인 개략도.3 is a schematic view showing a semiconductor wafer coating apparatus according to the present invention.

제4도는 본 발명에 의한 웨이퍼에 코팅된 상태를 보인 상태도.Figure 4 is a state diagram showing a state coated on the wafer according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

10 : 밀폐챔버 10a : 포화가스주입구10: closed chamber 10a: saturated gas inlet

11 : 감광액 공급판 12 : 웨이퍼척11: photosensitive liquid supply plate 12: wafer chuck

13 : 스핀들 G : 포화가스13 spindle G: saturated gas

상기 목적을 달성하기 위한 본 발명은, 웨이퍼를 얹어 놓는 웨이퍼척과, 그 웨이퍼척을 회전시키기 위한 스핀들 및 상기 웨이퍼에 감광액을 공급하는 감광액 공급관의 일부를 포함하여 밀폐된 공간을 이루는 밀폐챔버와, 상기 밀폐챔버의 일측에 설치되어 밀폐챔버의 내부에 공정가스를 포화가스로서 주입하기 위한 포화가스주입구를 포함하여 구성된 것을 특징으로 하는 반도체 웨이퍼 코팅장치를 제공한다.According to an aspect of the present invention, there is provided a closed chamber including a wafer chuck on which a wafer is placed, a spindle for rotating the wafer chuck, and a part of a photosensitive liquid supply pipe for supplying a photosensitive liquid to the wafer, It is provided on one side of the hermetically closed chamber provides a semiconductor wafer coating apparatus comprising a saturated gas inlet for injecting the process gas into the interior of the hermetically sealed chamber as a saturation gas.

이하, 본 발명에 의한 반도체 웨이퍼 코팅장치의 실시예를 첨부된 도면에 의거하여 설명하면 다음과 같다.Hereinafter, an embodiment of a semiconductor wafer coating apparatus according to the present invention will be described with reference to the accompanying drawings.

제3도는 본 발명에 의한 반도체 웨이퍼 코팅장치를 개략적으로 보인 것으로, 이에 도시된 바와 같이 본 발명에 의한 반도체 웨이퍼 코팅장치는 내부가 밀폐된 밀폐챔버(10) 내부에 감광액을 공급하기 위한 감광액공급관(11)을 설치하고, 그 감광액공급관(11)의 일정 거리 하측에는 웨이퍼를 안착하기 위한 웨이퍼척(12)을 설치하며, 그 웨이퍼척(12)의 저면에는 감광액의 공급시 상기 웨이퍼척을 회전시키는 회전스핀들(13)을 연결 설치한다.Figure 3 schematically shows a semiconductor wafer coating apparatus according to the present invention, as shown in the semiconductor wafer coating apparatus according to the present invention is a photosensitive liquid supply pipe for supplying a photosensitive liquid inside the hermetically sealed chamber (10) ( 11), a wafer chuck 12 for mounting a wafer is provided below a certain distance of the photosensitive liquid supply pipe 11, and the bottom surface of the wafer chuck 12 rotates the wafer chuck during photosensitive liquid supply. Connect and install the rotary spindle (13).

상기 밀폐챔버(10)의 일측에는 밀폐챔버(10) 내부를 포화시킬 수 있는 H2O, CH3, NH3등의 공정가스를 주입하기 위한 포화가스주입구(14)를 형성한다.One side of the sealed chamber 10 is provided with a saturated gas inlet 14 for injecting process gases, such as H 2 O, CH 3 , NH 3 , which can saturate the inside of the sealed chamber 10.

상기와 같이 구성된 본 발명에 의한 반도체 웨이퍼 코팅장치의 작용에 대해서 설명하면 다음과 같다.Referring to the operation of the semiconductor wafer coating apparatus according to the present invention configured as described above are as follows.

감광액공급라인(11)을 따라 흐르는 감광액은 감광액공급라인(11) 끝단부에 형성된 분사노즐(미도시)에 의해 교질용액(SOL)의 상태로 회전스핀들(13) 상부의 웨이퍼척(12)에 얹어진 웨이퍼(W)상에 분사된다.The photoresist flowing along the photoresist supply line 11 is injected into the wafer chuck 12 above the rotary spindle 13 in a state of colloidal solution SOL by an injection nozzle (not shown) formed at the end of the photoresist supply line 11. It is sprayed on the wafer W on which it is mounted.

감광액이 웨이퍼(W)의 중앙에 분무되면 웨이퍼(W) 하부에 설치된 회전스핀들(13)이 일정한 속도로 회전하여 웨이퍼(W)상의 감광액이 원심력에 의해 웨이퍼 전면에 균일하게 도포된다.When the photosensitive liquid is sprayed on the center of the wafer W, the rotary spindles 13 installed under the wafer W rotate at a constant speed so that the photosensitive liquid on the wafer W is uniformly applied to the entire surface of the wafer by centrifugal force.

이때, 상기 밀폐챔버(10)의 내부를 밀폐시키고, 그 내부에 포화가스를 주입하여 충분히 포화시킨 후 코팅공정을 진행함으로써 웨이퍼에 도포된 감광액이 휘발되는 것을 방지하여 제4도에 도시된 하와 같이 웨이퍼의 표면 평탄도를 향상시킨다.At this time, the inside of the airtight chamber 10 is sealed, and saturated gas is injected into the inside to sufficiently saturate the coating process, thereby preventing volatilization of the photosensitive liquid applied to the wafer as shown in FIG. Improve the surface flatness of the wafer.

이상에서 설명한 바와 같이, 본 발명에 의한 반도체 웨이퍼 코팅장치는 내부가 밀폐된 챔버 내부에서 공정가스를 포화시킨 상태를 유지하여 감광액의 휘발성을 감소시킴으로써 웨이퍼에 코팅되는 감광액의 평탄도를 향상시키는 효과가 있다.As described above, the semiconductor wafer coating apparatus according to the present invention has an effect of improving the flatness of the photosensitive liquid coated on the wafer by maintaining the saturation of the process gas in the closed chamber to reduce the volatility of the photosensitive liquid. have.

Claims (1)

웨이퍼를 얹어 놓는 웨이퍼척과, 그 웨이퍼척을 회전시키기 위한 스핀들 및 상기 웨이퍼에 감광액을 공급하는 감광액 공급판의 일부를 포함하여 밀폐된 공간을 이루는 밀폐챔버와, 상기 밀폐챔버의 일측에 설치되어 밀폐챔버의 내부에 공정가스를 포화가스로서 주입하기 위한 포화가스주입구를 포함하여 구성된 것을 특징으로 하는 반도체 웨이퍼 코팅장치.A hermetically sealed chamber including a wafer chuck on which a wafer is placed, a spindle for rotating the wafer chuck, and a part of a photosensitive liquid supply plate for supplying a photosensitive liquid to the wafer, and a hermetically sealed chamber installed at one side of the hermetically sealed chamber. And a saturation gas inlet for injecting a process gas as a saturation gas into the semiconductor wafer coating apparatus.
KR1019970066510A 1997-12-06 1997-12-06 Apparatus for coating semiconductor wafer KR100273245B1 (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62126640A (en) * 1985-11-27 1987-06-08 Mitsubishi Electric Corp Dust-yield preventing device of volatile coating-agent applying apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62126640A (en) * 1985-11-27 1987-06-08 Mitsubishi Electric Corp Dust-yield preventing device of volatile coating-agent applying apparatus

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