KR100266276B1 - 네가티브형포토레지스트조성물 - Google Patents

네가티브형포토레지스트조성물 Download PDF

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Publication number
KR100266276B1
KR100266276B1 KR1019930015592A KR930015592A KR100266276B1 KR 100266276 B1 KR100266276 B1 KR 100266276B1 KR 1019930015592 A KR1019930015592 A KR 1019930015592A KR 930015592 A KR930015592 A KR 930015592A KR 100266276 B1 KR100266276 B1 KR 100266276B1
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KR
South Korea
Prior art keywords
optionally substituted
photoresist composition
group
general formula
negative photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019930015592A
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English (en)
Korean (ko)
Other versions
KR940004386A (ko
Inventor
우에다유지
다께야마나오끼
우에끼히로미
구스모또다께히로
나까노유꼬
Original Assignee
고오사이 아끼오
스미또모 가가꾸 고교 가부시끼가이샤
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Publication date
Application filed by 고오사이 아끼오, 스미또모 가가꾸 고교 가부시끼가이샤 filed Critical 고오사이 아끼오
Publication of KR940004386A publication Critical patent/KR940004386A/ko
Application granted granted Critical
Publication of KR100266276B1 publication Critical patent/KR100266276B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1019930015592A 1992-08-20 1993-08-12 네가티브형포토레지스트조성물 Expired - Fee Related KR100266276B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP92-221373 1992-08-20
JP4221373A JPH0667413A (ja) 1992-08-20 1992-08-20 ネガ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
KR940004386A KR940004386A (ko) 1994-03-15
KR100266276B1 true KR100266276B1 (ko) 2000-09-15

Family

ID=16765781

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930015592A Expired - Fee Related KR100266276B1 (ko) 1992-08-20 1993-08-12 네가티브형포토레지스트조성물

Country Status (7)

Country Link
EP (1) EP0588092B1 (cg-RX-API-DMAC10.html)
JP (1) JPH0667413A (cg-RX-API-DMAC10.html)
KR (1) KR100266276B1 (cg-RX-API-DMAC10.html)
CA (1) CA2100516A1 (cg-RX-API-DMAC10.html)
DE (1) DE69301985T2 (cg-RX-API-DMAC10.html)
MX (1) MX9305048A (cg-RX-API-DMAC10.html)
TW (1) TW285719B (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101615980B1 (ko) 2015-07-22 2016-04-29 영창케미칼 주식회사 반도체 패턴 형성을 위한 KrF 레이저용 네가티브형 포토레지스트 조성물
KR101655947B1 (ko) 2016-03-22 2016-09-09 영창케미칼 주식회사 고해상도 및 고아스펙트비를 갖는 KrF 레이저용 네가티브형 포토레지스트 조성물
US11586109B2 (en) 2016-05-13 2023-02-21 Young Chang Chemical Co., Ltd Chemically-amplified-type negative-type photoresist composition

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0738932B1 (en) * 1995-04-21 2000-04-05 AGFA-GEVAERT naamloze vennootschap Imaging element comprising a photoacid-sensitive composition and a method for producing lithographic plates therewith
JPH11237742A (ja) * 1998-02-23 1999-08-31 Nec Corp レジスト材料、レジストパターンおよび製造方法
TW476019B (en) * 1999-05-27 2002-02-11 Winbond Electronics Corp Method for forming crosslinking photoresist

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189323A (en) * 1977-04-25 1980-02-19 Hoechst Aktiengesellschaft Radiation-sensitive copying composition
MX170270B (es) * 1984-06-01 1993-08-11 Rohm & Haas Imagenes sobre una superficie y un metodo para formar imagenes positivas y negativas termicamente estables sobre una superficie
CA2019693A1 (en) * 1989-07-07 1991-01-07 Karen Ann Graziano Acid-hardening photoresists of improved sensitivity

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101615980B1 (ko) 2015-07-22 2016-04-29 영창케미칼 주식회사 반도체 패턴 형성을 위한 KrF 레이저용 네가티브형 포토레지스트 조성물
US10162261B2 (en) 2015-07-22 2018-12-25 Young Chang Chemical Co., Ltd Negative photoresist composition for KrF laser for forming semiconductor patterns
KR101655947B1 (ko) 2016-03-22 2016-09-09 영창케미칼 주식회사 고해상도 및 고아스펙트비를 갖는 KrF 레이저용 네가티브형 포토레지스트 조성물
US10775699B2 (en) 2016-03-22 2020-09-15 Young Chang Chemical Co., Ltd Negative photoresist composition for KRF laser, having high resolution and high aspect ratio
US11586109B2 (en) 2016-05-13 2023-02-21 Young Chang Chemical Co., Ltd Chemically-amplified-type negative-type photoresist composition

Also Published As

Publication number Publication date
JPH0667413A (ja) 1994-03-11
MX9305048A (es) 1994-06-30
EP0588092A2 (en) 1994-03-23
KR940004386A (ko) 1994-03-15
DE69301985D1 (de) 1996-05-02
EP0588092B1 (en) 1996-03-27
CA2100516A1 (en) 1994-02-21
DE69301985T2 (de) 1996-09-19
TW285719B (cg-RX-API-DMAC10.html) 1996-09-11
EP0588092A3 (cg-RX-API-DMAC10.html) 1994-05-04

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