KR100264626B1 - 버퍼 회로 - Google Patents

버퍼 회로 Download PDF

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Publication number
KR100264626B1
KR100264626B1 KR1019970045838A KR19970045838A KR100264626B1 KR 100264626 B1 KR100264626 B1 KR 100264626B1 KR 1019970045838 A KR1019970045838 A KR 1019970045838A KR 19970045838 A KR19970045838 A KR 19970045838A KR 100264626 B1 KR100264626 B1 KR 100264626B1
Authority
KR
South Korea
Prior art keywords
type mos
mos transistor
level
signal
latch circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970045838A
Other languages
English (en)
Korean (ko)
Other versions
KR19980079347A (ko
Inventor
후미키 사토
코우이치 후지타
Original Assignee
다니구찌 이찌로오
미쓰비시덴키 가부시키가이샤
기타오카 다카시
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다니구찌 이찌로오, 미쓰비시덴키 가부시키가이샤, 기타오카 다카시 filed Critical 다니구찌 이찌로오
Publication of KR19980079347A publication Critical patent/KR19980079347A/ko
Application granted granted Critical
Publication of KR100264626B1 publication Critical patent/KR100264626B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors
    • H03K3/356182Bistable circuits using complementary field-effect transistors with additional means for controlling the main nodes
    • H03K3/356191Bistable circuits using complementary field-effect transistors with additional means for controlling the main nodes with synchronous operation

Landscapes

  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Shift Register Type Memory (AREA)
  • Dram (AREA)
KR1019970045838A 1997-03-03 1997-09-04 버퍼 회로 Expired - Fee Related KR100264626B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP04821397A JP3729965B2 (ja) 1997-03-03 1997-03-03 バッファ回路
JP97-048213 1997-03-03

Publications (2)

Publication Number Publication Date
KR19980079347A KR19980079347A (ko) 1998-11-25
KR100264626B1 true KR100264626B1 (ko) 2000-10-02

Family

ID=12797141

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970045838A Expired - Fee Related KR100264626B1 (ko) 1997-03-03 1997-09-04 버퍼 회로

Country Status (4)

Country Link
US (1) US5926037A (https=)
JP (1) JP3729965B2 (https=)
KR (1) KR100264626B1 (https=)
TW (1) TW330295B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100443643B1 (ko) * 2002-01-11 2004-08-09 삼성전자주식회사 반도체 집적 회로의 리시버 회로

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2172761B (en) * 1985-03-18 1988-11-09 Texas Instruments Ltd Random access memory using semiconductor data storage elements
KR910002967B1 (ko) * 1986-12-12 1991-05-11 가부시끼가이샤 히다찌세이사꾸쇼 바이폴라 트랜지스터와 mos 트랜지스터를 조합한 반도체 집적회로
US4804871A (en) * 1987-07-28 1989-02-14 Advanced Micro Devices, Inc. Bit-line isolated, CMOS sense amplifier
US5325335A (en) * 1991-05-30 1994-06-28 Integrated Device Technology, Inc. Memories and amplifiers suitable for low voltage power supplies
US5228106A (en) * 1991-05-30 1993-07-13 Integrated Device Technology, Inc. Track-and-regenerate amplifiers and memories using such amplifiers
US5508644A (en) * 1994-09-28 1996-04-16 Motorola, Inc. Sense amplifier for differential voltage detection with low input capacitance
US5872736A (en) * 1996-10-28 1999-02-16 Micron Technology, Inc. High speed input buffer

Also Published As

Publication number Publication date
JPH10247847A (ja) 1998-09-14
KR19980079347A (ko) 1998-11-25
US5926037A (en) 1999-07-20
JP3729965B2 (ja) 2005-12-21
TW330295B (en) 1998-04-21

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