KR100258873B1 - Apparatus for preventing clogging of vent-line in metal organic chemical vapor deposition system - Google Patents

Abstract

PURPOSE: An apparatus for preventing clogging of a vent-line in a metal organic chemical vapor deposition system is provided to prevent clogging within respective valves, within respective vent-lines or in a portion connected to a main vent-line though used in processes using metal such as MOS(Metal Organic Source) or generating a lot of by-product. CONSTITUTION: A vaporizer vent-line(111) connected to a conventional vaporizer(4), a mixer vent-line(112) connected to a conventional mixer(3) and an LDS(Liquid Delivery System) vent-line(113) extended from an LDS are connected to each other. A main vent-line(200) is connected to an exhaust port of a process chamber to exhaust by-product gas. A trap type drain canister(210) is detachably mounted to a connection part of the vaporizer vent-line(111). A step line(220) is detachably connected to a connection part of the mixer vent-line(112) using the potential energy of discharged MOS.

Description

Bent line clogging prevention device for semiconductor organometallic chemical vapor deposition equipment

The present invention relates to a semiconductor organic metal chemical vapor deposition system (Metal Organic Chemical Vapor Deposition system), in particular to a device for preventing clogging of the bent line for semiconductor organic metal chemical vapor deposition equipment suitable for the smooth distribution of the organic metal.

In general, organometallic chemical vapor deposition equipment (hereinafter referred to as MOCVD), metal reactants such as baron (Ba), strontium (Sr), titanium (Ti), nitrogen oxides (N ₂ O), oxygen (O ₂ ), It is a device that deposits a thin film or epi layer on a wafer in a process chamber by mixing with an oxygen gas such as hydrogen fluoride (HF ₃ ).

In such an asymbidi, a vaporizer for vaporizing the reactant and a mixer for appropriately mixing the vaporized reactant and the oxygen gas are provided, and the vaporizer and the mixer clean the inside of the gas before and after the process. This prevents particles from forming in the wafer's film.

FIG. 1 is a piping diagram shown to explain a conventional vent line for evacuating / purifying a vaporizer and a mixer as described above. As shown in the drawing, the conventional Ampib has a gas injector ( 2) is mounted, the gas injector 2 communicates with the gas injector 2 above, that is, the upper side of the process chamber 1, and the vaporizer 4 is provided with communication with one side of the mixer 3. .

On the other hand, the exhaust pipe (1b) for the discharge of the by-product gas is communicated to the bottom surface of the process chamber 1, the exhaust pipe (1b) is connected to a vacuum line (5) in communication with a vacuum pump (not shown), In the middle of the vacuum line (5) is mounted a cold trap (6) for condensing the by-product gas into a gas and foreign matter.

Here, the vent lines 7 and 8 communicate with one side of the vaporizer 4 and the mixer 3, and each of the vent lines 7 and 8 has an inlet side vacuum line of the cold trap 6. It communicates in parallel with the main vent line 9 which communicates with 5), respectively.

The main vent line 9 is usually provided on a horizontal line, and one side thereof is in series communication with the liquid delivery system vent line 10.

On / off valves 7a, 7b, 8a, 8b and 10a for controlling the flow of fluid are mounted on the inlet side and the outlet side of the vent lines 7, 8, 10, respectively.

In the drawings, reference numeral 1a denotes a heat supply unit, and W denotes a wafer.

In each of the conventional vent lines as described above, when the inlet valves 7a, 8a, and 10a of each line are opened before and after the process, the inside of the vaporizer 4 and the mixer 3 are exhausted by the inert gas or the solvent. The remaining organic organic source (Metal Organic Source) and the reaction gases were combined in the main vent line (9) through the vent line, and then discharged to the outside through the vacuum line (5).

However, in the conventional amphibian as described above, in the case of using a metal such as an amso source or when used in a process having many by-products, each of the valves 7a, 7b, 8a, 8b, 10a, or Alternatively, clogging may occur at the inside of each vent line 7, 8, and 10 and in the area where the main vent line 9 merges, which may lower the operation rate of the equipment or the main vent line 9. In the process of being combined with the vacuum line (5) of this equipment, there was a problem that causes the process progress while changing the process environment according to the pressure change.

Accordingly, the present invention is conceived in view of the problems of the conventional bent line of the ammonium SD, even if the use of a metal such as amose source or a lot of by-products used in the inside or each vent line of each valve An object of the present invention is to provide a blockage preventing apparatus of a vent line for a semiconductor organometallic chemical vapor deposition apparatus that does not generate a blockage at a portion where the inside and the main ventane are combined.

1 is a piping diagram of the vent line of conventional AMVID.

Figure 2 is a piping diagram of the vent line of the AMOCD in accordance with the present invention.

3A and 3B are a front view and a longitudinal sectional view of the trap line of an AMVID according to the present invention, showing a trap container.

* Explanation of symbols for main parts of the drawings

111, 112, 113: vent line 114: vacuum line

200: main vent line 210: trap bin

211 cases 211a and 211b gas inlet and outlet

212 cover 212a gas inlet

213: Vessel 214: Brankett

215: tube 216: observation window

217: observation window cover 218: bolt

219: O-ring 220: Step line

In order to achieve the object of the present invention, the vaporizer vent line communicated with the conventional vaporizer, the mixer vent line communicated with the conventional mixer, and the LS vent line extending from the LDS, and the exhaust port of the process chamber In the main vent line of the organometallic chemical vapor deposition equipment connected to the vacuum line to discharge the by-product gas; A trap container is detachably mounted to a portion communicating with the vaporizer vent line, and a step line is detachably mounted to a portion communicating with the mixer vent line so as to stay on the line by using potential energy of the outgoing EO source. Provided is an apparatus for preventing clogging of bent line for semiconductor organometallic chemical vapor deposition equipment, characterized in that

Hereinafter, a blockage preventing apparatus of a vent line for semiconductor organometallic chemical vapor deposition equipment according to the present invention will be described in detail with reference to an embodiment shown in the accompanying drawings.

FIG. 2 is a piping diagram of the vent line of an AMVID according to the present invention, and FIGS. 3A and 3B are front and longitudinal cross-sectional views showing a trap cylinder in the vent line of the AMVID according to the present invention.

As shown therein, the amphibiide according to the present invention is obtained from the vaporizer ventane 111 in communication with the conventional vaporizer 4 and the mixer ventin 112 and LS in communication with the conventional mixer 3. The extended LS vent line 113 communicates with the main vent line 200 connected to an exhaust port (not shown) of the process chamber (not shown) and connected to a vacuum line 114 for discharging the by-product gas. In; A trap type drain canister 210 is detachably mounted to a portion communicating with the vaporizer vent line 111, and a potential energy of the EO sources flowing out to a portion communicating with the mixer vent line 112 is provided. A step line 220 is detachably mounted for staying on the line.

The outer peripheral surface of each vent line is wound with a heater tape 115 interposed with a heating wire in order to prevent condensation of fluid, and the outer peripheral surface of the tape 115 is covered with a heat dissipation member 116 for preventing heat dissipation.

As illustrated in FIGS. 3A and 3B, the trap cylinder 210 has a cylindrical case 211 having gas inlets and outlets 211a and 211b formed at both sides thereof, and a seal formed by covering and enclosing the case 211. A cover 212 in which a gas inlet 212a communicating with the vaporizer vent line 111 is formed, and is mounted so as to be detached from the inside of the case 211 so as to communicate with gas inlets 211a and 211b on both sides of the case 211. A gas inlet and outlet (unsigned) is formed so that by-products are filtered out by potential energy in the gas passing through the gas inlet and outlet, and are mounted to extend deeply into the vessel 213 and the interior of the vessel 213. It is made of a blanket (214) forming a flow path of the fluid.

The tube 215 extending from the gas inlet 212a of the cover 212 preferably extends deep into the vessel 213 to prevent the upper portion of the case 211 from being contaminated.

One side of the case 211 is formed by the observation window 216 is opened to observe the filtering degree of the by-product from the outside, the outer ring surface of the case 211 formed with the observation window 216 O-ring (O- The observation window cover 217 is tightly fixed by the bolt through the ring.

In addition, it is preferable that the on / off belts 117a, 117b, and 117c are mounted at the rear end of the trap cylinder 210 and the rear end of the step line 220, respectively.

In the drawings, the same reference numerals are given to the same parts as in the prior art.

In the figure, reference numeral 218 denotes a bolt and 219 an O-ring.

The apparatus for preventing clogging of the vent line for semiconductor organic metal chemical vapor deposition apparatus according to the present invention as described above is operated as follows.

Each vent line (111, 112, 113) after unreacted by-product source or reactant gases is discharged / purified in the conventional vaporizer (4) and mixer (3) and LDS (unsigned) Inflow to the inlet, and the inflow of the inlet to each of the vent line is filtered through the trap container 210 and the step line 220 installed in consideration of the amount or nature of the vent material.

That is, the inflow material passing through the trap container 210 and the step line 220 is primarily divided into gas and foreign matter by its own load difference, and the gas is a chamber (not shown) through the main vent line 200. While introduced into the vacuum line 114 in communication with the exhaust port (not shown) of the), foreign matter is accumulated in the bottom surface of the vessel 213 and the step line 220 of the trap container 210, in particular the trap container ( In 200, the gas flowing into the interior of the vessel 213 from the gas inlets 211a and 212a is guided to the lower half of the vessel 213 by the blanket 214, and then again through the gas outlet 211b. It will flow into the vent line (200). The worker will be able to determine the filtering of foreign matter on the vessel 213 through the observation window (216).

As such, the vessel 213 or the step line 220 of the trap container 210 in which the foreign matter is filtered are separated from each other, and thus, only the trap container 210 and the step line 220 are separated when the equipment is maintained to remove the foreign material. Just do it.

On the other hand, the gas flowing through the trap container 210 and the step line 220 into the vacuum line 114 is divided into gas and foreign matters in the colt trap 6 in a secondary manner, while the gas is discharged. It is caught in the cold trap 6 and is removed during maintenance.

In addition, since the heater tape 115 is wound around the outer circumferential surface of each line, and the heat dissipation member 116 is covered again on the outer circumferential surface of the tape 115, the gaseous source passing through each line is It is prevented from liquefying by the temperature decrease.

Thus, the trap cylinder 210 and the step line 220 is applied to prevent clogging in the line, as well as to prevent the blockage of each valve (117a, 117, 117c), each line is a predetermined temperature To prevent the vaporized source from liquefying again, which significantly reduces particles and reduces the inflow of foreign matter into the vacuum line 114 or a vacuum pump (not shown) in communication with the vacuum line 114. The blockage of the line 114 is reduced and the process is stabilized, as well as a long maintenance interval and a long service life of the pump, thereby increasing the operation rate of the equipment.

In addition, since the trap container 210 and the step line 220 can be separated independently, it is possible to easily check the degree of deposition of foreign matter at any time and easily repair.

As described above, in the apparatus for preventing the blockage of ventane for semiconductor organometallic chemical vapor deposition equipment according to the present invention, a trap container is detachably mounted at a portion in communication with the vaporizer ventane, and in communication with the mixer ventane. The part is detachably equipped with a step line for staying on the line by using potential energy of discharged EO sources, so that even if a metal such as EO source or a by-product is used in many processes, each valve inside or each vent The blockage does not occur at the inside of the line and the area where it merges with the main vent line, thereby significantly increasing the operation rate of the equipment, and also stably reducing the particle generation of the wafer.

Claims (4)

A vaporizer vent line communicating with a conventional carburetor, a mixer vent line communicating with a conventional mixer, and an LS vent line extending from an LDS are collectively communicated with each other, and connected to an exhaust port of a process chamber to discharge a by-product gas. In the main vent line of the organic metal chemical vapor deposition equipment connected; A trap container is detachably mounted to a portion communicating with the vaporizer vent line, and a step line is detachably mounted to a portion communicating with the mixer vent line so as to stay on the line by using potential energy of the outgoing EO source. Preventing clogging phenomenon of the vent line for semiconductor organometallic chemical vapor deposition equipment, characterized in that. According to claim 1, wherein the outer circumferential surface of each vent line is wound around the heating tape to prevent the condensation of fluid, and the outer circumferential surface of the tape is characterized in that the heat dissipation member for preventing heat dissipation is covered. Vent line clogging prevention device for semiconductor organometallic chemical vapor deposition equipment. According to claim 1, wherein the trap cylinder is a cylindrical case having a gas inlet and outlet formed on both sides, and a cover which covers the case and the gas inlet communicating with the vaporizer vent line at the center thereof, and the inside of the case The gas inlet and outlet are formed so as to be in communication with the gas inlet and outlet on both sides of the case, and by-products are caught by the potential energy in the gas passing through the gas inlet and outlet, and are mounted to extend deep into the interior of the vessel. Ventane clogging phenomenon prevention device for semiconductor organometallic chemical vapor deposition equipment, characterized in that the blanket consists of a fluid flow path. The apparatus of claim 3, wherein an observation window is formed at one side of the case so as to observe the filtering degree of the by-product from the outside.

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