KR100683441B1 - Atomic layer deposition apparatus and process - Google Patents

Abstract

A device and method for atomic layer deposition is disclosed that minimizes mixing of chemicals and reactant gases. The first precursor and the second precursor are mixed with other chemicals and reactant gases only at the desired time and place by installing and monitoring the distribution front line 26. In addition, dedicated independent chamber outlets 17, 29, isolation valves 24, 34, discharge front lines 22, 36, and discharge pumps 20, 30 are provided for specific gases when needed. Is activated.

Atomic layer, precursor, chamber outlet, specific gas

Description

Atomic layer deposition apparatus and method

The present invention relates to atomic layer deposition. In particular, the present invention relates to apparatus and methods for improving the performance of an atomic layer deposition chamber.

A method of depositing very thin films is atomic layer deposition (ALD). This method has several advantages over conventional chemical vapor deposition. The method can be performed at lower temperatures, uses a wide range of precursors, produces very thin films, obtains essentially 100% step coverage, and “complexes” composite membrane matrices. "Can be used to.
The following US patents and published international patent applications disclose reactor chambers for processing thin films used in the semiconductor industry: US Patent No. 5,674,563 by Tarui et al., EP 0 651 432 A1 by Kim et al. U.S. Patent 6,270,572 B1.

In ALD, individual precursors are pulsed on the surface of the wafer in a sequential manner without mixing the precursors in a gas phase state. Each individual precursor reacts with the surface to form an atomic layer in such a way that only one layer is formed at a time. Surface reactions occur to complete the reaction and only one layer is deposited at a time. This happens no matter how many molecules are applied to the surface in an excessive dodosing mode. The films are formed by introducing short bursts of gases in fast cycles.

According to the inventors' recognition, two problems arise in the ALD method. The first problem relates to the conversion of the flow of liquid precursors introduced into the gaseous state. During ALD processing with a liquid delivery system, it is necessary to maintain the established flow of liquid precursors in the gaseous state. In order to keep the flow active, the flow must be diverted to the fore-line of the ALD chamber when liquid precursors are not needed in the deposition process. When the opposing gas is in the pulsed phase, the unreacting chemicals are mixed with the chemicals converted in the front line and react to produce build up in the front line. The formation can be severe and block the front line. The second problem relates to the reaction of gases. Process gases are introduced separately for the ALD process and processed through the same front lines to react the gases or vapors with each other.

Accordingly, what is needed is an ALD device and method that minimizes clogging of the front line of the converted liquid precursor. There is also a need for a technique for controlling any area common to reactant gases or vapors in a manner that minimizes unwanted reactions.

These needs are met by the present invention in which improved ALD devices and methods are provided. The present invention satisfies the first need to minimize clogging of the front line by providing an ALD apparatus and method for installing and monitoring a second front line so that separate chemicals are mixed only at the desired time and place. The present invention satisfies the second need to minimize the reaction of gases in pump lines by allowing the reactant gases or vapors to be removed from the process reactor chamber without contacting each other in the area causing unwanted reaction of the process gases or vapors. This is accomplished by providing dedicated independent pumping lines and corresponding isolation valves, which are activated for a particular gas when needed. Separate pump lines allow the gas to be discharged in a manner that minimizes possible unwanted reactions of the reactant gases. It is therefore an object of the present invention to provide an improved ALD apparatus and method that uses the distribution of the front lines and the second exhaust path to prevent clogging of the exhaust front line.

The following detailed description of the preferred embodiments of the present invention is best understood when read in conjunction with the following drawings, in which like structures are denoted by like reference numerals.

1 is a diagram illustrating an ALD device according to an embodiment of the present invention.

2 illustrates an ALD device according to another embodiment of the present invention.

3 illustrates an ALD device according to another embodiment of the present invention.

4 illustrates an ALD device according to another embodiment of the present invention.

5 illustrates an ALD device according to another embodiment of the present invention.

First, referring to FIG. 1, an ALD device 2 according to an embodiment of the present invention is shown. 1 shows a process reactor chamber 10, a first dispensing valve 4, a second dispensing valve 8, an isolation valve 24, an exhaust fore-line line 22, an evacuation pump 20 And an ALD device 2 comprising a dispensing front line 26. Process reactor chamber 10 includes a first precursor inlet 14, a second precursor inlet 16, and a first chamber outlet 17. The first dispensing valve 4 is coupled to the first precursor inlet 14 of the process reactor chamber 10. The second dispensing valve 8 is coupled to the second precursor inlet 16 of the process reactor chamber 10. The isolation valve 24 is directly coupled to the first chamber outlet 17 of the process reactor chamber 10. The discharge pump 20 is coupled to the isolation valve 24 by a discharge front line 22 forming a discharge path. Dispensing front line 26 includes a first end 25 and a second end 27. The first end 25 is coupled to the first dispensing valve 4 and the second end 27 is coupled to the discharge pump 20. As shown in FIG. 1, there is no substantial discharge front line between the isolation valve 24 and the first chamber outlet 17, as described above, where the isolation valve 24 is directly connected to the chamber outlet 17. )

The first dispensing valve 4 allows the first precursor 6 to flow through the first precursor inlet 14 into the process reactor chamber 10. The continuous flow of the first precursor 6 must be maintained. Thus, the first dispensing valve 4 selectively diverts the direction of the first precursor 6 to the first precursor inlet 14 of the process reactor chamber 10. When the first precursor 6 is not converted into the process reactor chamber 10, this first precursor is sent to the discharge pump 20 via the distribution front line 26. The dispensing front line 26 is used to discard the first precursor 6 when the first precursor 6 is not diverted to the first precursor inlet 14. The dispensing front line 26 mixes with the first precursor 6 to prevent the first precursor from other chemicals, precursors, and emissions that potentially cause blockage of the first exhaust front line 22. 6) can be used to isolate. Thus, the discharge front line 22 remains clean and the flow remains stable and constant.

The process reactor chamber 10 includes a first precursor inlet 14, a second precursor inlet 16, a heater 13, a wafer 11, and a shower head device 18. The first precursor inlet 14 and the second precursor inlet 16 may share a common opening 12 or alternatively have separate openings. The first precursor inlet 14 can lead the first precursor 6 through a shower head device 18 that distributes the first precursor 6 to the process reactor chamber 10. Once in the process reactor chamber 10, the first precursor 6 is absorbed on the surface of the wafer 11. The wafer is placed on the heater 13. The manner in which the absorption of the precursor is achieved is beyond the scope of the present invention and is well known in the art. This can be obtained from one of a number of techniques for atomic layer deposition.

After the first precursor 6 is absorbed on the wafer 11, the first precursor that is not reacting introduces a purge gas into the chamber outlet 17 through a purge valve 7. As a result, it is discharged out of the process reactor chamber 10. The first precursor, which does not react, flows directly into the isolation valve 24, where it is delivered to the discharge pump 20 via the discharge front line 22.

The first precursor 6 and the second precursor 9 are introduced at separate intervals. Once the first precursor, which does not react, is withdrawn from the process reactor chamber 10 through the use of a purge valve 7, the second dispense valve 8 draws the second precursor 9 into the second precursor inlet ( 16) and ultimately, into the process reactor chamber 10. The second precursor inlet 16 introduces a second precursor 9 through a shower head device 18 which distributes the second precursor 9 to the process reactor chamber 10. Next, the second precursor 9 reacts with the layer formed on the wafer 11 from the first precursor 6 to form a single layer film on the wafer 11.

The second precursor, which does not react, is discharged from the process reactor chamber 10 to the chamber outlet 17 using a purge valve 7. The second precursor, which does not react, flows directly into the isolation valve 24, where it is delivered to the discharge pump 20 via the discharge front line 22.

This process of alternately introducing, reacting and purifying the second precursor 9 and the first precursor 6 is carried out continuously at high speed.

In order to explain and define the present invention, it should be understood that the precise mechanism by which molecules of the first precursor are attached to the surface of the semiconductor substrate is not a subject matter of the present invention. This mechanism is described herein simply as "absorption." The general term 'absorption' means absorption, adsorption, and other similar mechanisms by which the precursor forms a monolayer on the surface of the wafer 11.

The embodiment of the invention shown in FIG. 2 differs from FIG. 1 in that it uses a dispensing pump 28. In this embodiment, the first end 25 of the dispensing front line 26 is coupled to the dispensing valve 4. The second end 27 of the dispensing front line 26 is coupled to the dispensing pump 28. The dispensing pump 28 collects the unconverted first precursor 6 such that the unconverted first precursor 6 is mixed with the first precursor 6 and potentially the first outlet front line 22. Keep away from chemicals, precursors, and emissions that cause clogging). Thus, the discharge front line 22 remains clean and the flow remains stable and constant.

The embodiment of FIG. 3 shows a second isolation valve 34, a second discharge front line 36 and a second discharge pump 30, as shown in FIG. 2 because they form a second discharge path. different. This second discharge path is configured to separately hold the first precursor that does not react and the second precursor that does not react. This reduces the likelihood of mixing and the possibility of clogging either of the discharge front lines 22, 36. The second isolation valve 34, the second discharge front line 36, and the second discharge pump 30 are connected to the first isolation valve 24, the first discharge front line 22 and the first discharge pump 20. It works in a similar way. After the second precursor 9 is absorbed onto the wafer 11, the second precursor which does not react is introduced into the second chamber outlet 29 through the purge valve 7 to introduce the process gas into the process reactor chamber ( 10) It is discharged out. The unreacted second precursor flows directly into the second isolation valve 34, where it is delivered to the second discharge pump 30 via the second discharge front line 36.

The embodiment of FIG. 3 differs from the embodiment shown in FIG. 2 because the dispensing front line 26 is connected to the first discharge path. In particular, the dispensing front line 26 is connected to the first discharge pump 20. The dispense valve is optionally coupled to the first outlet front line 22 or directly to the dispense pump 28 as shown in FIG. 2.

The embodiment of FIG. 4 differs from that of FIG. 3 because the second dispensing front line 32 extends from the second dispensing valve 8 to the second discharge path, in particular to the second discharge front line 36. The second dispensing front line 32 is connected directly to the second discharge pump 30 similarly to the embodiment of FIG. 1 or to the second dispensing pump similar to the embodiment of FIG. 2. The second dispensing pump is operated in a similar manner as the first dispensing pump 28 described above. The second dispensing pump collects the unconverted second precursor 9 such that the unconverted second precursor 9 is mixed with the second precursor 9 and potentially the second outlet front line 36. Keep away from chemicals, precursors and emissions that can cause clogging. Thus, the second outlet front line 36 remains clean and the flow remains stable and constant.

The second dispensing front line 32 operates in a similar manner to the first dispensing front line 26. The second dispensing front line 32 is used to discard the second precursor when the second precursor is not diverted to the second precursor inlet 16. The second dispensing front line 32 mixes with the second precursor 9 to prevent the second precursor 9 from chemicals, precursors and emissions that potentially cause blockage of the second discharge front line 36. Can be used to isolate). Thus, the second outlet front line 36 remains clean and the flow remains stable and constant. The second dispensing front line 32 also comprises a first end 31 and a second end 33, the first end 31 being coupled to the second dispensing valve 8 and the second dispensing front line. The second end 33 of 32 is coupled to the second discharge path or to the second dispensing pump.

5 differs from the preceding figures because it does not show the first dispensing front line 26 or the second dispensing front line 32. Therefore, only two separate discharge paths are shown.

Although the invention has been described in detail with reference to the preferred embodiments, modifications and variations are possible without departing from the scope of the invention as defined in the appended claims. In particular, although some features of the invention have been shown herein as being preferred or particularly advantageous, it is understood that the invention is not necessarily limited to these preferred features of the invention.

Claims (65)

In the atomic layer deposition apparatus 2, A process reactor chamber (10) comprising a first precursor inlet (14), a second precursor inlet (16), and a first chamber outlet (17); A first dispensing valve (4) coupled to the first precursor inlet (14) of the process reactor chamber (10); A second dispensing valve (8) coupled to the second precursor inlet (16) of the process reactor chamber (10); The chamber outlet 17 as a first discharge path coupled to the reactor chamber 10 such that there is no exhaust fore-line between the first isolation valve 24 and the chamber outlet 17. A first discharge path, configured to be selectively isolated from the process reactor chamber (10) by the first isolation valve (24) directly coupled to the; And A first dispensing front line 26 comprising a first end 25 and a second end 27, the first end 25 being coupled to the first dispensing valve 4 and having a first dispensing front line. The second end (27) of (26) comprises a first dispensing front line (26) coupled to the first discharge path or first dispensing pump (28). 2. The atomic layer deposition apparatus of claim 1, wherein the second end (27) of the first distribution front line (26) is coupled to the first discharge path. 2. The pump of claim 1 wherein the first discharge path further comprises a first discharge pump 20, the first isolation valve 24, and a first discharge front line 22. 20) is coupled to the first isolation valve (24) by the first exhaust front line (22). 4. The atomic layer deposition apparatus of claim 3, wherein the first discharge path is isolated from the process reactor chamber (10) when the first isolation valve (24) is in a closed state. delete 4. The atomic layer deposition apparatus of claim 3, wherein the second end (27) of the first distribution front line (26) is coupled to the first isolation valve (24) of the first discharge path. 4. The atomic layer deposition apparatus of claim 3, wherein the second end (27) of the first distribution front line (26) is coupled to the first discharge pump (20) of the first discharge path. 4. The atomic layer deposition apparatus of claim 3, wherein the second end (27) of the first distribution front line (26) is coupled to the first discharge front line (22) of the first discharge path. The apparatus of claim 1, wherein the apparatus further comprises a second discharge path coupled to the second chamber outlet (29). 10. The pump of claim 9 wherein the first discharge path comprises a first discharge pump 20, the first isolation valve 24, and a first discharge front line 22, wherein the first discharge pump 20 Is coupled to the first isolation valve 24 by the first outlet front line 22, The second discharge path includes a second discharge pump 30, a second isolation valve 34, and a second discharge front line 36, wherein the second discharge pump 30 includes the second discharge front line. An atomic layer deposition apparatus, coupled to the second isolation valve by means of (36). 10. The apparatus of claim 9, wherein the second discharge path is isolated from the process reactor chamber (10) when the second isolation valve (34) is closed. 10. The method of claim 9, wherein the second isolation valve 34 is configured such that the discharge front line does not exist between the second isolation valve 34 and the second chamber outlet 29. Atomic layer deposition apparatus, coupled directly to the second chamber outlet (29). 2. The atomic layer deposition apparatus of claim 1, wherein the second end (27) of the first distribution front line (26) is coupled to the first distribution pump (28). 2. The device of claim 1, wherein the device further comprises a second dispensing front line 32 comprising a first end 31 and a second end 33, the first end 31 being the second end. Coupled to a distribution valve (8), wherein the second end (33) of the second distribution front line (32) is coupled to a second discharge path. 15. The pump of claim 14 wherein the first discharge path comprises a first discharge pump 20, the first isolation valve 24 and a first discharge front line 22, wherein the first discharge pump 20 Coupled to the first isolation valve 24 by the first outlet front line 22, The second discharge path includes a second discharge pump 30, a second isolation valve 34, and a second discharge front line 36, wherein the second discharge pump 30 includes the second discharge front line. An atomic layer deposition apparatus, coupled to the second isolation valve by means of (36). 16. The apparatus of claim 15, wherein the second end (33) of the second distribution front line (32) is coupled to the second isolation valve (34) of the second discharge path. 16. The apparatus of claim 15, wherein the second end (33) of the second distribution front line (32) is coupled to the second discharge pump (30) of the second discharge path. 16. The apparatus of claim 15, wherein the second end (33) of the second distribution front line (32) is coupled to the second discharge front line (36) of the second discharge path. 14. The device of claim 13, wherein the device further comprises a second dispensing front line 32 comprising a first end 31 and a second end 33, the first end 31 being the second end. Coupled to a dispensing valve (8), wherein the second end (33) of the second dispensing front line (32) is coupled to a second dispensing pump. delete The apparatus of claim 1, wherein the apparatus further comprises a first vapor supply coupled to the first precursor inlet (14). 22. The apparatus of claim 21, wherein the apparatus further comprises a second vapor supply coupled to the second precursor inlet (16). The atomic layer deposition apparatus of claim 1, wherein the first precursor inlet and the second precursor inlet share a common opening. The apparatus of claim 1, wherein the first precursor inlet (14) and the second precursor inlet (16) have separate openings. 2. An atomic layer deposition apparatus according to claim 1, wherein the apparatus comprises a purge valve (7). 2. The atomic layer deposition apparatus of claim 1, wherein the process reactor chamber (10) further comprises a shower head device (18). In the atomic layer deposition apparatus 2, Process reactor chamber 10; The first isolation valve directly coupled to the first chamber outlet 17 of the process reactor chamber 10 such that there is no discharge front line between the first isolation valve 24 and the first chamber outlet 17. 24); A first discharge pump (20) coupled to the first isolation valve (24) by a first discharge front line (22); Second isolation valve 34 directly coupled to the second chamber outlet 29 of the process reactor chamber 10 such that there is no discharge front line between the second isolation valve 34 and the second chamber outlet 29. ); And And a second discharge pump (30) coupled to the second isolation valve (34) by a second discharge front line (36). delete delete delete delete delete delete delete Introducing a first precursor into the first precursor inlet 14 of the process reactor chamber 10; Controlling the process reactor chamber (10) to absorb the first precursor on a substrate; Discharging the unabsorbed first precursor from the chamber (10) by opening the isolation valve directly coupled to the chamber outlet such that there is no discharge front line between the isolation valve and the chamber outlet; Introducing a second precursor into a second precursor inlet (16) of said process reactor chamber (10); Controlling the process reactor chamber (10) for reaction of the first precursor and the second precursor; And Discharging a second precursor from said process reactor chamber 10 that does not react by opening said isolation valve directly coupled to said chamber outlet such that there is no discharge front line between the isolation valve and the chamber outlet. Atomic layer deposition method. delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete 36. The process of claim 35 wherein the process reactor chamber (10) discharges the unabsorbed first precursor by opening a first isolation valve (24) directly coupled to the first outlet outlet of the process reactor chamber (10). Become, Wherein in the process reactor chamber (10) an unreacted second precursor is discharged by opening a second isolation valve (34) coupled directly to a second outlet outlet of the process reactor chamber (10). delete delete delete delete delete delete delete delete delete delete delete delete In the atomic layer deposition apparatus 2, A process reactor chamber (10) comprising a first precursor inlet (14), a second precursor inlet (16) and a first chamber outlet (17); A first dispensing valve (4) coupled to the first precursor inlet (14) of the process reactor chamber (10); A second dispensing valve (8) coupled to the second precursor inlet (16) of the process reactor chamber (10); A first discharge path coupled to the first chamber outlet 17 of the process reactor chamber 10 and configured to be selectively isolated from the process reactor chamber 10, the first discharge path being a first isolation valve 24. A first discharge path comprising a first discharge pump (20) coupled to the first isolation valve (24) by a first discharge front line (22), and the first discharge front line (22); A second discharge path coupled to the second chamber outlet 29 of the process reactor chamber 10 and configured to be selectively isolated from the process reactor chamber 10, wherein the second discharge path is a second isolation valve 34. A second discharge path, comprising a second discharge front line (36), and a second discharge pump (30) coupled to the second isolation valve (34) by the second discharge front line (36); A first dispensing front line 26 comprising a first end 25 and a second end 27, wherein the first end 25 is coupled to the first dispensing valve 4 and the first dispensing front. A first dispensing front line (26) coupled to the first discharge path or first dispensing pump (28); And A second dispensing front line 32 comprising a first end 31 and a second end 33, wherein the first end 31 is coupled to the second dispensing valve 8 and the second dispensing front. The second end (33) of line (32) is provided with the second dispensing front line (32) coupled to the second discharge path or second dispensing pump.

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