KR100257976B1 - An in-plane switching mode liquid crystal display device - Google Patents

Abstract

PURPOSE: A liquid crystal display device in plane switching mode is to overlap a common electrode with a part of a gate line and a data line to enlarge a pixel region for realizing a picture image, thereby improving a numerical aperture of the device. CONSTITUTION: The first and second substrates is provided. A gate line(101) and a data line(102), respectively are arranged longitudinally and horizontally on the first substrate, thereby defining a pixel region. A TFT(thin film transistor) is formed on an intersecting point of the gate line and the data line. A common line(103) is arranged on the pixel region horizontally to the gate line. A data electrode(108) is arranged on the pixel region horizontally to the data line. A common electrode(109) is overlapped with a part of the gate line and the data line, thereby blocking electric field from the gate line and the data line. The first alignment film is deposited on the entire surface of the first substrate, and a black mask(128) is formed on the first alignment film. The second alignment film is deposited on a color filter layer formed on the black mask. A liquid crystal layer is formed between the first and second substrates.

Description

Transverse electric field liquid crystal display device {AN IN-PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE}

The present invention relates to a liquid crystal display device, and more particularly, to a transverse electric field type liquid crystal display device having improved aperture ratio and improved image quality.

Recently, a large area has been strongly demanded in thin film transistor liquid crystal displays (TFT LCDs), which are widely used in portable televisions and notebook computers. However, the above-described TFT LCDs have a problem in that contrast ratio is changed depending on the viewing angle. In order to solve this problem, various liquid crystal display devices such as a twisted nematic liquid crystal display device equipped with an optical compensation plate and a multi-domain liquid crystal display device have been proposed. It is difficult to solve the problem that the contrast ratio decreases and the color changes depending on the viewing angle.

Another type of liquid crystal display device that is proposed to realize a wide viewing angle is a liquid crystal display device of the in plane switching mode (JAPAN DISPLAY 92 P547, Japanese Patent Laid-Open No. 7-36058, Japanese Patent Laid-Open No. 7-225538, It is proposed to ASIA DISPALY 95 P107.

1 is a view showing a conventional transverse electric field type liquid crystal display device. In the conventional transverse electric field type liquid crystal display device, as shown in FIG. 1A, the gate line 1 and the data line 2 are arranged on the first substrate 10 to define a pixel area. The common wiring 3 arranged in the pixel in parallel with the gate wiring 1, the thin film transistor arranged at the intersection of the gate wiring 1 and the data wiring 2, and the data wiring 2 in the pixel. And a data electrode 8 and a common electrode 9 arranged in substantially parallel with each other. As shown in FIG. 1B, the TFT may include a gate electrode 5 formed on the first substrate 10 and connected to the gate wiring 1, and a gate insulating layer stacked on the gate electrode 5. 12), it is formed on the active layer 15 and the n ⁺ layer 16 and the one n ⁺ layer 16 is formed on the above-described active layer 15 formed on the gate insulating film 12, data wire (2 ) And a source electrode 6 and a drain electrode 7 respectively connected to the data electrode 8. The common electrode 9 in the pixel is formed on the first substrate 10 and connected to the common wiring 3, and the data electrode 8 is formed on the gate insulating film 12 and connected to the drain electrode 7 of the thin film transistor. . A protective film 20 is stacked on the thin film transistor, the data electrode 8 and the gate insulating film 12, and the first alignment film 23a is coated thereon to determine the orientation direction.

The second substrate 11 is formed with a light blocking layer 28 that prevents light leakage near the thin film transistor, the gate wiring 1, the data wiring 2, and the common wiring 3. 29) and the second alignment film 23b are formed. In addition, a liquid crystal layer 30 is formed between the first substrate 10 and the second substrate 11.

In the transverse electric field type liquid crystal display device configured as described above, when a voltage is applied from an external driving circuit, a transverse electric field parallel to the substrates 10 and 11 is generated between the data electrode 8 and the common electrode 9. . Accordingly, the liquid crystal molecules oriented in the liquid crystal layer 30 rotate along the above-described transverse electric field, thereby controlling the amount of light passing through the liquid crystal layer 30.

However, the above-described conventional transverse electric field type liquid crystal display has the following problems. First, since both electrodes 8 and 9 in the pixel are made of an opaque metal, the aperture ratio is lowered. Second, since the passivation layer 20 is stacked on the data electrode 8 and the gate insulating layer 12 and the passivation layer 20 are formed on the common electrode 9, the transverse electric field applied to the liquid crystal layer 30 is the above-mentioned. The strength of the transverse electric field absorbed by the gate insulating film 12 and the protective film 20 and applied to the liquid crystal layer 30 is reduced. Therefore, the driving speed of the liquid crystal molecules is lowered, which causes the screen to break when the video is implemented. Third, in order to prevent crosstalk due to the electric field generated by the gate wiring 1 and the data wiring 2, the pixel area in which the actual image and the gate wiring 1 and the data wiring 2 are realized. Since the distance must be at least a certain distance, the aperture ratio is further lowered.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a transverse electric field type liquid crystal display device having an improved aperture ratio by overlapping a common electrode with a portion of a gate line and a data line to widen a pixel area in which an actual image is realized. It is done.

Another object of the present invention is to provide a transverse electric field type liquid crystal display device having an improved image quality by inclining the common electrode at the intersection of the data electrode and the common electrode.

In order to achieve the above object, the transverse electric field type liquid crystal display device of the present invention is the first substrate and the second substrate, the gate wiring and data wiring to cross the vertical and horizontal on the first substrate to define a pixel area, and A thin film transistor disposed at an intersection of one gate wiring and a data wiring, a common wiring arranged in parallel with the gate wiring in the pixel region, a data electrode arranged in parallel with the data wiring in the pixel region, and A common electrode arranged in parallel with the data electrode and overlapping a portion of the gate wiring and the data wiring to block an electric field from the gate wiring and the data wiring, a first alignment film coated over the entire first substrate; A black mask formed on the second alignment film, a color filter layer formed on the black mask, a second alignment film applied on the color filter layer, and It is configured with a liquid crystal layer formed between the first substrate and the second substrate.

The thin film transistor includes a gate electrode connected to a gate wiring, a gate insulating film stacked over the entire first substrate on the gate electrode, an active layer formed on the gate insulating film, an n ⁺ layer formed on the semiconductor layer, It consists of a source / drain electrode formed on one n ⁺ layer.

The data electrode is formed on the gate insulating film and connected to the source / drain electrodes, and the common electrode made of a transparent metal such as ITO is formed on the protective film and connected to the common wiring through the hole. The data electrode and the common electrode form an additional capacitance therebetween, thereby applying a double additional capacitance to the entire liquid crystal display device.

At the intersection of the data electrode and the common electrode, the common electrode is inclined so that the liquid crystal molecules in the vicinity thereof rotate in the same direction as the rotation direction of the liquid crystal molecules in the middle region of the pixel. In this case, the inclination direction of the common electrode is preferably 45 ° with respect to the gate wiring.

1 is a view showing a conventional transverse electric field type liquid crystal display device.

2 is a plan view of a transverse electric field type liquid crystal display device according to a first embodiment of the present invention.

FIG. 3A is a cross-sectional view taken along the line BB ′ of FIG. 2.

FIG. 3B is a cross-sectional view taken along the line CC 'of FIG. 2.

Fig. 4 is a diagram showing the optical axis direction of the first embodiment of the present invention.

Fig. 5 is a schematic diagram showing driving of liquid crystal molecules in the first embodiment of the present invention.

6 is a block diagram of a liquid crystal panel according to the present invention.

7 is a configuration diagram of a transverse electric field type liquid crystal display device to which the present invention is applied.

8A is a plan view of a transverse electric field type liquid crystal display device according to a second embodiment of the present invention.

(B) is sectional drawing in the DD 'line | wire of (a).

Fig. 9 is a view showing the optical axis direction of the second embodiment.

Fig. 10 is a diagram showing driving of liquid crystal molecules in the first embodiment and the second embodiment.

Fig. 11 is a diagram showing a third embodiment of the present invention.

-Explanation of symbols for the main parts of the drawings-

101, 201, 301: gate wiring 102, 202, 302: data wiring

103, 203, 303: common wiring 105, 205, 305: gate electrode

106, 206, 306: source electrode 107, 207, 307: drain electrode

108, 208, 308: data electrode 109, 209, 309: common electrode

110: first substrate 111: second substrate

112: gate insulating film 115: active layer

116: n ⁺ layer 123: alignment layer

125, 225, 325: hole 128: black mask

130: liquid crystal layer 132, 133: liquid crystal molecules

135 polarizing plate 136

139: liquid crystal panel 140: display unit

145: frame 147: backlight housing

148: backlight 149: light guide plate

150: gate driving circuit 151: gate pad

154: data drive circuit 155: data pad

157: common pad 165: external ground circuit

167: antistatic circuit

Hereinafter, a transverse electric field type liquid crystal display device according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a diagram showing a first embodiment of the present invention. As shown in the figure, a plurality of gate wirings 101 and data wirings 102 are arranged on a substrate to define a pixel region. In the actual liquid crystal display device, n x m pixels exist by the n gate wirings 101 and the m data wirings 102, but only one pixel is shown in the drawing for convenience of description. The common wiring 103 is arranged in parallel with the gate wiring 101 in the pixel, and a thin film transistor is disposed at the intersection of the gate wiring 101 and the data wiring 102. The data electrode 108 and the common electrode 109 arranged in the pixel are arranged in parallel with the data wiring 102. In this case, the data electrode 108 and the common electrode 109 are also formed on the common wiring 103, respectively. The common electrode is connected to the common wiring 103 through the hole 125 of the passivation layer. In addition, as shown in the figure, the common electrode 109 overlaps a portion of the gate wiring 101 and the data wiring 102. Due to the overlap of the common electrode 109, the electric field by the gate wiring 101 and the data wiring 102 is blocked by the common electrode 109, thereby preventing crosstalk from occurring.

(A) is sectional drawing in the BB 'line | wire of FIG. As shown in the drawing, the thin film transistor is formed on the gate electrode 105 formed on the first substrate 110, the gate insulating film 112 stacked on the gate electrode 105, and on the gate insulating film 112. The active layer 115 and the n ⁺ layer 116 formed on the active layer 115, the source electrode 106 and the drain electrode 107 formed on the n ⁺ layer 116. The gate electrode 105 is formed at the same time as the gate wiring 101 and the common wiring 103. The gate electrode 105 is formed by etching a double film made of an Al thin film having a thickness of 2000 GPa and a Mo thin film having a thickness of 1000 GPa by a sputtering method. The gate insulating film 112 is formed by stacking an inorganic material, such as SiNx, on the entire first substrate 110 to a thickness of 4000 kPa by a chemical vapor deposition (CVD) method. The active layer 115 and the n ⁺ layer 116 are formed by etching 1700 Å thick amorphous silicon (a-Si) and 300 Å thick n ⁺ a-Si deposited by the CVD method. The data wiring 102, the source electrode 106, the drain electrode 107, and the data electrode 108 are formed by etching a 1500 Å thick Cr thin film deposited by a sputtering method. As shown in FIG. 2, the gate electrode 105 of the thin film transistor is connected to the gate wiring 101, the source electrode 106 is connected to the data wiring 102, and the drain electrode 107 is connected to the data electrode 108. Is connected to.

On the thin film transistor, the gator wiring 108 and the gate insulating film 112, a protective film 120 made of SiNx having a thickness of 2000 Å is stacked, and a common electrode 109 is formed thereon. The common electrode 109 is a transparent conductive film such as indium tin oxide (ITO) that is stacked about 500 mW by a sputtering method, and overlaps a part of the drain electrode 107.

The first alignment layer 123a is coated on the common electrode 109 and the passivation layer 120. Although the alignment direction 123a made of polyimide is determined by mechanical rubbing, the alignment film 123a made of photoreactive material such as polyvinylcinnemate (PVCN) -based material or polysiloxane-based material is irradiated with light such as ultraviolet rays. The orientation direction is determined by. In the optical alignment process described above, the alignment direction is determined according to whether the irradiated light is polarized, the polarization direction, and the number of irradiation times. In general, in the case where the above-described polysiloxane-based material or PVCN-based material is used as the alignment film, the alignment direction is determined by irradiating the ultraviolet light once or twice. The method of irradiating light once includes a method of obliquely irradiating unpolarized light with respect to the alignment layer, a method of obliquely irradiating polarized (particularly linearly polarized) light, a method of obliquely irradiating partially polarized light, and the like. In the method of irradiating twice, the two degeneracy alignment directions are determined by inclining or vertically irradiating the polarized light with respect to the alignment layer once, and then irradiating the polarized light again to select a desired direction among the two alignment directions. .

As shown in FIG. 2, a hole 125 is formed in the passivation layer 120 so that the common electrode 109 is connected to the common wiring 103 through the hole. FIG. 3B is a cross-sectional view taken along line C-C 'of FIG. 2 and illustrates the connection between the common wiring 103 and the common electrode 109 through the hole 125. As shown in the figure, the data electrode 108 and the common electrode 109 are connected to metal wirings formed on the gate insulating film 112 and the passivation layer 120, respectively. Of course, these metal wires are simultaneously formed of the same metal as the data electrode 108 and the common electrode 109, respectively. Therefore, the gate insulating film 112 and the metal wiring to which the data electrode 108 is connected and the common wiring 103, between the metal wiring to which the common electrode 109 is connected and the metal wiring to which the data electrode 108 is connected, respectively. Since the protective film 120 is stacked, as shown in the drawing, the storage capacity Cst is equal to the additional capacitance Cst1 and the common wiring 103 between the data electrode 108 and the common electrode 109. The sum of the additional capacitances Cst2 between the data electrodes 108 is greater than the conventional additional capacitance Cst2. At this time as well, the common electrode 109 overlaps with a portion of the data wiring 102 to prevent the occurrence of crosstalk by the data wiring 102.

The black substrate 128 and the color filter layer 129, which are light blocking layers, are formed on the second substrate 111. It is also possible to form an overcoat layer on the black mask 128 and the color filter layer 129 to improve surface stability and to improve flatness. The black mask 128 is to prevent light from leaking near the gate wiring 101, near the data wiring 102, near the common wiring 103, and near the thin film transistor. It is formed of Cr / CrOx thin film or black resin having a film thickness of about 1 μm. In the color filter layer 129, R, G, and B layers are repeatedly formed for each pixel. After the second alignment layer 123b made of polyimide or a photoreactive material is coated on the color filter layer 129, the orientation direction is determined by rubbing or irradiation of light. In addition, a liquid crystal is injected in a vacuum state between the first substrate 110 and the second substrate 111 to form the liquid crystal layer 130.

4 is a view showing the driving of the liquid crystal molecules according to the first embodiment of the present invention, Figure 5 is a view showing the optical axis direction. In the figure, θ _EL , θ _R , θ _E represent the extension direction of the data electrode 108 and the common electrode 109, the alignment direction of the alignment film, and the transverse electric field direction between the electrodes 108, 109, respectively. As shown in the figure, the data electrode 108 and the common electrode 109 are arranged in parallel with the extending direction of the data wiring 102 (θ _EL = 90 °). The orientation direction θ _R determined in the alignment film is 0 ° <θ _R <90 °, and the liquid crystal molecules are aligned along the above-described orientation direction θ _R as shown in FIG. 5. When a voltage is applied to the electrode to generate a transverse electric field of θ _E = 0 ° between the electrodes 108 and 109, the liquid crystal molecules 132 are rotated clockwise to be oriented along the electric field direction θ _E. In the figure, the dashed liquid crystal molecules 132 are liquid crystal molecules when no voltage is applied, and the solid liquid crystal molecules 133 are liquid crystal molecules when voltage is applied.

In the transverse electric field type liquid crystal display device having the above structure, since the common electrode 109 formed on the passivation layer 120 overlaps the gate wiring 101 and a part of the data wiring 102, the above-described two wirings ( The electric field generated by 101 and 102 is cut off to prevent crosstalk from occurring. Therefore, in the transverse electric field type liquid crystal display device of the present invention, in order to prevent the occurrence of the crosstalk in the conventional transverse electric field type liquid crystal display device, the pixel area in which the actual image is implemented is divided into the gate wiring 101 and the data wiring ( Compared with forming a distance greater than a certain distance from 102, a wider pixel area can be ensured, thereby improving the aperture ratio.

In addition, since the common electrode 109 is formed on the passivation layer 120, absorption of an electric field by the insulating layer does not occur, and an electric field of strong intensity is applied to the liquid crystal layer 130. Therefore, the driving voltage can be lowered. In addition, when the common electrode 109 is made of transparent ITO, the aperture ratio is further improved. In addition, as shown in FIG. 3 (b), since the additional capacitance Cst increases significantly compared to the prior art, not only the voltage applied to the liquid crystal layer 130 is further stabilized, but also a similar additional capacitance is provided. By reducing the additional capacitance area, the aperture ratio can be further improved.

6 illustrates a thin film transistor array substrate to which the present invention is applied. As shown in the figure, the gate wiring 101 and the data wiring 102 arranged vertically and horizontally are connected to the external driving circuit through the gate pad 151 and the data pad 155, respectively. The gate wiring 101 and the data wiring 102 are connected to the outer circumferential ground wiring 165 through an antistatic circuit 167 composed of a thin film transistor. In addition, an antistatic circuit 167 is formed between the gate wiring 101 and the data wiring 102. The source electrode and the drain electrode of the antistatic circuit 167 are connected to the data wiring 102. In addition, the common wiring 103 is also grounded to the outside through the common pad 157.

Although not shown in the figure, the pads 151, 155, and 157 are composed of a plurality of metal layers. Mo / Al layer is mainly used as the first metal layer and Cr layer is used as the second metal layer. In general, the passivation layer 120 stacked on the pads 151, 155, and 157 is successively stacked. Therefore, in order to connect the liquid crystal panel with the external driving circuit, it is necessary to etch the protective film of the pad area, which is etched at the same time as the hole 125 is formed. However, the pads 151, 155, and 157 exposed to the outside by the above etching tend to have an oxide film formed on the surface of the pads 151, 155, and 157 to increase contact resistance. In the present embodiment, when the common electrode 109 made of ITO is formed on the passivation layer 120, ITO is also laminated on the pad region, thereby preventing the formation of an oxide film on the surface of the pad.

7 is a view showing the configuration of a transverse electric field type liquid crystal display device according to the present invention. FIG. 7 (a) is a plan view, and FIG. 7 (b) is a sectional view taken along the line D-D 'of FIG. 7 (a). As shown in FIG. 7A, the gate driver circuit 150 and the data driver circuit 154 are disposed in the frame 145 outside the display unit 140 to provide the gate pad 151 and the data pad 155. The gate line 101 and the data line 102 of the display unit 140 are connected to each other.

As shown in FIG. 6B, a backlight 148 is mounted in the back light housing 147 of the upper portion of the frame 145 to light the liquid crystal panel 139 through the light guide plate 149. Project. A polarizing plate 135 for linearly polarizing the projected light is attached between the light guide plate 149 and the liquid crystal panel 139, and an analyzer 136 is attached to the outside of the liquid crystal panel 139.

FIG. 8 is a diagram showing a second embodiment of the present invention, and FIG. 9 is a diagram showing the optical axis direction. As shown in the figure, also in this embodiment, the common electrode 209 overlaps a portion of the gate wiring 201 and the data wiring 202 so that the crosstalk by the gate wiring 201 and the data wiring 202 can be obtained. Prevent occurrence. In this embodiment, the common electrode 209 is formed to be inclined on both sides of the data electrode 208. In the drawing, regions indicated by A and B are regions showing the inclined structure of the common electrode 209 described above. As shown in Fig. 7, the extending directions θ _EL , the orientation directions θ _R , and the directions θ _E of the electrodes 208 and 209 are the same as in the first embodiment. The inclination direction θ _A of the common electrode 209 in the region A is θ _R <θ _A <θ _R + 90 °, and the inclination direction θ _B in the region B is 90 ° -θ _R <θ _B < 180 ° -θ _R.

The common electrode 209 is formed in an inclined structure as in the present embodiment as well as the crosstalk by the gate wiring 201 and the data wiring 202 as well as the common electrode 209 and the data in the liquid crystal display device of the first embodiment. It is to provide a transverse electric field type liquid crystal display device having improved image quality by solving the problem of the foreground generated by the electrode 208.

In the electrode structure as in the first embodiment, an electric field between the electrodes 108 and 109 when a voltage is applied is formed as shown in Fig. 10A. That is, in the middle region, the direction θ _E of the electric field is perpendicular to the extending direction θ _EL of the electrodes 108 and 109, but the area indicated by A and B in the drawing, that is, the data electrode 108 and the common electrode ( At the intersection of 109, a curved electric field occurs between the electrodes 108, 109 orthogonal to each other. When no voltage is applied, the liquid crystal molecules 132 are aligned in the alignment direction θ _R , but as the voltage is applied, the liquid crystal molecules 132 rotate and are arranged in the electric field direction θ _E. In the middle region, as shown in the figure, the liquid crystal molecules 132 are rotated in the clockwise direction and are arranged perpendicularly to the extending direction θ _EL of the electrodes 108 and 109. However, in the regions A and B, the electric field is curved. The liquid crystal molecules 133 are arranged in a direction different from that of the intermediate region. The arrangement of the liquid crystal molecules 133 is a major factor in the occurrence of foreground in regions A and B. In particular, in the region A, the liquid crystal molecules 132 rotate in the opposite directions to the intermediate region and the region B, and the degree becomes more severe. In the figure, the foreground is indicated by a dashed line, which is a fatal defect that degrades the image quality.

In the second embodiment, since the common electrode 209 is formed at the intersection of the data electrode 208 and the common electrode 209 with the inclined structure on both sides of the data electrode 208, Fig. 8B In the regions A and B, the rotation direction of the liquid crystal molecules 132 is the same as the rotation direction in the intermediate region, thereby preventing the occurrence of foreground in the regions A and B.

In the second embodiment, the common electrode 209 is formed on the passivation layer using a transparent metal such as ITO to improve the aperture ratio, and the double layer formed by the common electrode 209 and the data electrode 208 is formed. The additional capacity of can be formed.

11 is a view showing a third embodiment of the present invention. This embodiment differs from the second embodiment only in the inclination direction of the electrodes, and all other structures are the same. At this time, the inclination directions θ _A and θ _B of the common electrode 309 are θ _A = 45 ° and θ _B = 135 °, and the alignment direction θ _R of the alignment film is θ _R = 75 °.

Since the common electrode overlaps a portion of the gate wiring and the data wiring as described above, the present invention actually prevents crosstalk caused by the gate wiring and the data wiring in the conventional transverse electric field type liquid crystal display device. The aperture ratio is significantly improved compared to forming the pixel region where the pixel region is implemented so that the gate wiring and the data wiring are separated by a predetermined distance or more. In addition, when the common electrode is formed, the common electrode overlapping the data line has an inclined structure, thereby preventing the foreground due to the transverse electric field between the common electrode and the data line at the intersection of the common electrode and the data electrode.

Claims (14)

A first substrate and a second substrate; A plurality of gate wirings and data wirings arranged vertically and horizontally on the first substrate to define a pixel area; A plurality of thin film transistors disposed at intersections of the gate lines and the data lines; A common wiring formed in the pixel; A first electrode formed in said pixel; A second electrode formed in the pixel in parallel with the first electrode and overlapping a portion of the gate wiring and the data wiring; A transverse electric field liquid crystal display device comprising a liquid crystal layer formed between the first substrate and the second substrate. The transverse electric field liquid crystal display device according to claim 1, wherein the first electrode is a data electrode and the second electrode is a common electrode. The method of claim 1, A protective film for holding a hole applied over the entire first substrate; A first alignment film coated on the protective film; A light blocking layer formed on the second substrate; A color filter layer formed on the light shielding layer; And a second alignment layer coated on the color filter layer. According to claim 1, wherein the thin film transistor, A gate electrode formed on the first substrate; A gate insulating film formed on the gate electrode; A semiconductor layer formed on the gate insulating film; A transverse electric field liquid crystal display device comprising a source electrode and a drain electrode formed on the semiconductor layer. The transverse electric field liquid crystal display device according to claim 4, wherein the first electrode is formed on the gate insulating film. The transverse electric field liquid crystal display device according to claim 3, wherein the second electrode is formed on the passivation layer. The method of claim 1, A first metal wiring to which the first electrode is connected on the gate insulating film in the common wiring region; And a second metal wiring to which the second electrode is connected is formed on the passivation layer of the common wiring region. The transverse electric field liquid crystal display device according to claim 7, wherein the first electrode and the second electrode form an additional capacitance. The transverse electric field liquid crystal display device according to claim 7, wherein the second metal wiring is connected to a common wiring through a hole. A first substrate and a second substrate; A plurality of gate wirings and data wirings arranged vertically and horizontally on the first substrate to define a pixel area; A plurality of thin film transistors disposed at intersections of the gate lines and the data lines; A common wiring formed in the pixel; A first electrode formed in said pixel; A second electrode formed in the pixel to be parallel to the first electrode so as to overlap a part of the gate wiring and the data wiring, and a portion crossing the first electrode having an inclined structure; A transverse electric field liquid crystal display device comprising a liquid crystal layer formed between the first substrate and the second substrate. The method of claim 10, A protective film for holding a hole applied over the entire first substrate; A first alignment film coated on the protective film; A light blocking layer formed on the second substrate; A color filter layer formed on the light shielding layer; And a second alignment layer coated on the color filter layer. 12. The transverse direction of claim 11, wherein the alignment direction of the alignment layer is θ _R , and the inclined structure of the second electrode forms angles θ _A and θ _B on both sides of the first electrode. Electric field type liquid crystal display device. The transverse electric field liquid crystal display device according to claim 12, wherein θ _R <θ _A <θ _R + 90 ° and 90 ° -θ _R <θ _B <180 ° -θ _R. The transverse electric field liquid crystal display device according to claim 12, wherein θ _A = 45 ° and θ _B = 45 °.

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