KR100245909B1 - 5개의 스퀘어를 갖는 폴드된 비트라인 디램 셀 - Google Patents

5개의 스퀘어를 갖는 폴드된 비트라인 디램 셀 Download PDF

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Publication number
KR100245909B1
KR100245909B1 KR1019950059696A KR19950059696A KR100245909B1 KR 100245909 B1 KR100245909 B1 KR 100245909B1 KR 1019950059696 A KR1019950059696 A KR 1019950059696A KR 19950059696 A KR19950059696 A KR 19950059696A KR 100245909 B1 KR100245909 B1 KR 100245909B1
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KR
South Korea
Prior art keywords
gate
trench
minimum dimension
dram cell
connector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950059696A
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English (en)
Korean (ko)
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KR960026877A (ko
Inventor
피. 노블 주니어 웬델
Original Assignee
포만 제프리 엘
인터내셔널 비지네스 머신즈 코포레이션
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Publication date
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Publication of KR960026877A publication Critical patent/KR960026877A/ko
Application granted granted Critical
Publication of KR100245909B1 publication Critical patent/KR100245909B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
KR1019950059696A 1994-12-28 1995-12-27 5개의 스퀘어를 갖는 폴드된 비트라인 디램 셀 Expired - Fee Related KR100245909B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/365,617 1994-12-28
US08/365,617 US6252267B1 (en) 1994-12-28 1994-12-28 Five square folded-bitline DRAM cell
US08/365,617 1994-12-28

Publications (2)

Publication Number Publication Date
KR960026877A KR960026877A (ko) 1996-07-22
KR100245909B1 true KR100245909B1 (ko) 2000-03-02

Family

ID=23439607

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950059696A Expired - Fee Related KR100245909B1 (ko) 1994-12-28 1995-12-27 5개의 스퀘어를 갖는 폴드된 비트라인 디램 셀

Country Status (5)

Country Link
US (2) US6252267B1 (cg-RX-API-DMAC10.html)
EP (1) EP0720221A1 (cg-RX-API-DMAC10.html)
JP (1) JP3075509B2 (cg-RX-API-DMAC10.html)
KR (1) KR100245909B1 (cg-RX-API-DMAC10.html)
TW (1) TW312050B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250054322A (ko) 2023-10-16 2025-04-23 (주)위니텍 사물인터넷 기반의 자가 진단 및 복구 기능을 구비한 수위 감지 시스템 및 이를 이용한 방법

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US5614431A (en) * 1995-12-20 1997-03-25 International Business Machines Corporation Method of making buried strap trench cell yielding an extended transistor
DE19713961C2 (de) * 1997-04-04 1999-05-06 Siemens Ag Verfahren zur Erzeugung einer leitenden Verbindung zwischen zumindest zwei Gebieten eines ersten Leitfähigkeitstyps
US5892707A (en) 1997-04-25 1999-04-06 Micron Technology, Inc. Memory array having a digit line buried in an isolation region and method for forming same
US6190960B1 (en) 1997-04-25 2001-02-20 Micron Technology, Inc. Method for coupling to semiconductor device in an integrated circuit having edge-defined sub-lithographic conductors
US6004835A (en) 1997-04-25 1999-12-21 Micron Technology, Inc. Method of forming integrated circuitry, conductive lines, a conductive grid, a conductive network, an electrical interconnection to anode location and an electrical interconnection with a transistor source/drain region
US5976930A (en) 1997-04-25 1999-11-02 Micron Technology, Inc. Method for forming gate segments for an integrated circuit
US6844600B2 (en) * 1998-09-03 2005-01-18 Micron Technology, Inc. ESD/EOS protection structure for integrated circuit devices
TW429411B (en) * 1998-12-21 2001-04-11 Toshiba Corp Semiconductor device and its manufacture
US6208555B1 (en) 1999-03-30 2001-03-27 Micron Technology, Inc. Negative resistance memory cell and method
US6696718B1 (en) 1999-04-06 2004-02-24 Micron Technology, Inc. Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same
US6380575B1 (en) * 1999-08-31 2002-04-30 International Business Machines Corporation DRAM trench cell
US6369419B1 (en) * 2000-06-23 2002-04-09 International Business Machines Corporation Self-aligned near surface strap for high density trench DRAMS
US6437389B1 (en) * 2000-08-22 2002-08-20 Micron Technology, Inc. Vertical gate transistors in pass transistor programmable logic arrays
US6545935B1 (en) 2000-08-29 2003-04-08 Ibm Corporation Dual-port DRAM architecture system
IL156154A0 (en) * 2000-11-29 2003-12-23 Grainpro Inc Method and system for transporting and storing commodities
US6566682B2 (en) * 2001-02-09 2003-05-20 Micron Technology, Inc. Programmable memory address and decode circuits with ultra thin vertical body transistors
US6496034B2 (en) * 2001-02-09 2002-12-17 Micron Technology, Inc. Programmable logic arrays with ultra thin body transistors
US6559491B2 (en) * 2001-02-09 2003-05-06 Micron Technology, Inc. Folded bit line DRAM with ultra thin body transistors
US6424001B1 (en) 2001-02-09 2002-07-23 Micron Technology, Inc. Flash memory with ultra thin vertical body transistors
US6531727B2 (en) * 2001-02-09 2003-03-11 Micron Technology, Inc. Open bit line DRAM with ultra thin body transistors
US6699777B2 (en) 2001-10-04 2004-03-02 Micron Technology, Inc. Etch stop layer in poly-metal structures
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US6667504B1 (en) * 2003-03-24 2003-12-23 International Business Machines Corporation Self-aligned buried strap process using doped HDP oxide
US7508075B2 (en) * 2003-08-01 2009-03-24 Micron Technology, Inc. Self-aligned poly-metal structures
KR100549014B1 (ko) * 2004-07-21 2006-02-02 삼성전자주식회사 스페이서 패턴을 갖는 반도체 장치들 및 그 형성방법들
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7557032B2 (en) 2005-09-01 2009-07-07 Micron Technology, Inc. Silicided recessed silicon
US7687342B2 (en) * 2005-09-01 2010-03-30 Micron Technology, Inc. Method of manufacturing a memory device
US7439135B2 (en) * 2006-04-04 2008-10-21 International Business Machines Corporation Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
US7939876B2 (en) * 2008-04-09 2011-05-10 International Business Machines Corporation Metallized conductive strap spacer for SOI deep trench capacitor
US9520390B2 (en) * 2013-03-15 2016-12-13 Semiconductor Components Industries, Llc Electronic device including a capacitor structure and a process of forming the same
US9443857B2 (en) 2014-12-05 2016-09-13 Globalfoundries Inc. Vertical fin eDRAM
TWI847368B (zh) * 2022-11-16 2024-07-01 南亞科技股份有限公司 半導體結構及其形成方法

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US4801988A (en) 1986-10-31 1989-01-31 International Business Machines Corporation Semiconductor trench capacitor cell with merged isolation and node trench construction
JPS63237460A (ja) * 1987-03-25 1988-10-03 Mitsubishi Electric Corp 半導体装置
US4812885A (en) * 1987-08-04 1989-03-14 Texas Instruments Incorporated Capacitive coupling
EP0306241B1 (en) * 1987-09-01 1993-11-03 Shibuya Kogyo Co., Ltd Dialysis system
JPH01199465A (ja) * 1988-02-04 1989-08-10 Fujitsu Ltd 半導体記憶装置
JPH0212835A (ja) * 1988-06-30 1990-01-17 Toshiba Corp 半導体装置およびその製造方法
US5146291A (en) * 1988-08-31 1992-09-08 Mitsubishi Denki Kabushiki Kaisha MIS device having lightly doped drain structure
US5160987A (en) 1989-10-26 1992-11-03 International Business Machines Corporation Three-dimensional semiconductor structures formed from planar layers
US5013680A (en) 1990-07-18 1991-05-07 Micron Technology, Inc. Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography
US5202272A (en) 1991-03-25 1993-04-13 International Business Machines Corporation Field effect transistor formed with deep-submicron gate
US5214603A (en) * 1991-08-05 1993-05-25 International Business Machines Corporation Folded bitline, ultra-high density dynamic random access memory having access transistors stacked above trench storage capacitors
US5264716A (en) 1992-01-09 1993-11-23 International Business Machines Corporation Diffused buried plate trench dram cell array
US5434103A (en) * 1993-06-10 1995-07-18 Micron Technology, Inc. Method of forming an electrical connection
US5498889A (en) * 1993-11-29 1996-03-12 Motorola, Inc. Semiconductor device having increased capacitance and method for making the same
US5384277A (en) * 1993-12-17 1995-01-24 International Business Machines Corporation Method for forming a DRAM trench cell capacitor having a strap connection
US5369049A (en) * 1993-12-17 1994-11-29 International Business Machines Corporation DRAM cell having raised source, drain and isolation
US5539229A (en) * 1994-12-28 1996-07-23 International Business Machines Corporation MOSFET with raised STI isolation self-aligned to the gate stack
JPH1199465A (ja) * 1997-09-26 1999-04-13 Tokyo Seimitsu Co Ltd 固定砥粒ワイヤソー

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250054322A (ko) 2023-10-16 2025-04-23 (주)위니텍 사물인터넷 기반의 자가 진단 및 복구 기능을 구비한 수위 감지 시스템 및 이를 이용한 방법

Also Published As

Publication number Publication date
JPH08236727A (ja) 1996-09-13
TW312050B (cg-RX-API-DMAC10.html) 1997-08-01
EP0720221A1 (en) 1996-07-03
KR960026877A (ko) 1996-07-22
JP3075509B2 (ja) 2000-08-14
US6090660A (en) 2000-07-18
US6252267B1 (en) 2001-06-26

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