KR100231653B1 - Mosfet 스위치 매트릭스 - Google Patents

Mosfet 스위치 매트릭스 Download PDF

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Publication number
KR100231653B1
KR100231653B1 KR1019920003282A KR920003282A KR100231653B1 KR 100231653 B1 KR100231653 B1 KR 100231653B1 KR 1019920003282 A KR1019920003282 A KR 1019920003282A KR 920003282 A KR920003282 A KR 920003282A KR 100231653 B1 KR100231653 B1 KR 100231653B1
Authority
KR
South Korea
Prior art keywords
switch
coupled
module
zener diode
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019920003282A
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English (en)
Korean (ko)
Other versions
KR920019081A (ko
Inventor
제임스 니니스 토마스
Original Assignee
제럴드 엘. 클라인
리톤 시스템즈 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제럴드 엘. 클라인, 리톤 시스템즈 인코포레이티드 filed Critical 제럴드 엘. 클라인
Publication of KR920019081A publication Critical patent/KR920019081A/ko
Application granted granted Critical
Publication of KR100231653B1 publication Critical patent/KR100231653B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
KR1019920003282A 1991-03-01 1992-02-29 Mosfet 스위치 매트릭스 Expired - Lifetime KR100231653B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/663,094 US5227781A (en) 1991-03-01 1991-03-01 Mosfet switch matrix
US663,094 1991-03-01

Publications (2)

Publication Number Publication Date
KR920019081A KR920019081A (ko) 1992-10-22
KR100231653B1 true KR100231653B1 (ko) 1999-11-15

Family

ID=24660446

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920003282A Expired - Lifetime KR100231653B1 (ko) 1991-03-01 1992-02-29 Mosfet 스위치 매트릭스

Country Status (8)

Country Link
US (1) US5227781A (enExample)
KR (1) KR100231653B1 (enExample)
CA (1) CA2061142C (enExample)
FR (1) FR2673494B1 (enExample)
GB (1) GB2254208B (enExample)
IL (1) IL100878A (enExample)
IT (1) IT1258367B (enExample)
TW (1) TW226481B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240113618A (ko) * 2017-09-07 2024-07-22 비식 테크놀로지스 엘티디. 고전압 고속 스위칭 장치

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2718904B1 (fr) * 1994-04-14 1996-05-15 Commissariat Energie Atomique Commutateur rapide de haute tension à amplificateur d'impulsions.
FR2743222B1 (fr) * 1995-12-27 1998-02-13 Commissariat Energie Atomique Commutateur impulsionnel de puissance capable de fournir des impulsions de courant de forte intensite et de faible duree
US6346744B1 (en) 1999-09-14 2002-02-12 Sarnoff Corporation Integrated RF M×N switch matrix
US6930473B2 (en) 2001-08-23 2005-08-16 Fairchild Semiconductor Corporation Method and circuit for reducing losses in DC-DC converters
US7279773B2 (en) * 2005-03-15 2007-10-09 Delphi Technologies, Inc. Protection device for handling energy transients
DE102005052800A1 (de) * 2005-11-05 2007-08-16 Semikron Elektronik Gmbh & Co. Kg Treiberschaltungsanordnung zur Ansteuerung von leistungselektronischen Schaltungen
WO2009058695A2 (en) * 2007-10-30 2009-05-07 Northrop Grumman Systems Corporation Cool impact-ionization transistor and method for making same
US8183892B2 (en) 2009-06-05 2012-05-22 Fairchild Semiconductor Corporation Monolithic low impedance dual gate current sense MOSFET
US20110128761A1 (en) * 2009-12-01 2011-06-02 Skyworks Solutions, Inc. Continuously variable switched capacitor dc-dc voltage converter
US9236378B2 (en) 2010-08-11 2016-01-12 Sarda Technologies, Inc. Integrated switch devices
US8569811B1 (en) * 2010-08-11 2013-10-29 Sarda Technologies, Inc. Self clamping FET devices in circuits using transient sources
US8896034B1 (en) 2010-08-11 2014-11-25 Sarda Technologies, Inc. Radio frequency and microwave devices and methods of use
CA2833017A1 (en) * 2011-04-21 2012-10-26 Converteam Technology Ltd. Gate drive circuit and associated method
US9136795B2 (en) 2011-05-19 2015-09-15 Skyworks Solutions, Inc. Variable switched DC-to-DC voltage converter
FR2988931B1 (fr) * 2012-03-30 2015-10-16 Schneider Toshiba Inverter Dispositif de commande employe dans un systeme d'alimentation electrique a decoupage
US9621034B2 (en) 2014-09-30 2017-04-11 Skyworks Solutions, Inc. Frequency modulation based voltage controller configuration
US9830809B2 (en) * 2015-08-31 2017-11-28 Evan Zinger Electrical device controller
US9774322B1 (en) 2016-06-22 2017-09-26 Sarda Technologies, Inc. Gate driver for depletion-mode transistors
CN114498376B (zh) * 2021-12-30 2025-03-28 湖北三江航天红峰控制有限公司 一种电动伺服机构直流电源顺序输出配电盒

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3662250A (en) * 1970-11-12 1972-05-09 Gen Electric Thyristor overvoltage protective circuit
US3633046A (en) * 1970-04-28 1972-01-04 Gen Electric Parallel thyristors switching matrices
US3713104A (en) * 1971-06-29 1973-01-23 Gte Automatic Electric Lab Inc Electronic scanpoint matrix with switch monitoring
US3725863A (en) * 1971-12-17 1973-04-03 Bell Telephone Labor Inc Balanced semiconductor switching network circuit and construction
US3973253A (en) * 1972-03-27 1976-08-03 International Business Machines Corporation Floating addressing system for gas panel
US4367421A (en) * 1980-04-21 1983-01-04 Reliance Electric Company Biasing methods and circuits for series connected transistor switches
AU588020B2 (en) * 1985-03-04 1989-09-07 Raytheon Company High voltage solid state switch
DE3616097A1 (de) * 1986-05-13 1987-11-19 Bbc Brown Boveri & Cie Schaltungsanordnung zur ansteuerung von leistungs-feldeffekttransistoren
EP0377619B1 (de) * 1987-09-18 1994-03-09 Robert Bosch Gmbh Hochspannungsschalter und verfahren zur ansteuerung von verbrauchern mittels des hochspannungsschalters
EP0431846B1 (en) * 1989-12-04 1997-02-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240113618A (ko) * 2017-09-07 2024-07-22 비식 테크놀로지스 엘티디. 고전압 고속 스위칭 장치
KR102745458B1 (ko) 2017-09-07 2024-12-20 비식 테크놀로지스 엘티디. 고전압 고속 스위칭 장치

Also Published As

Publication number Publication date
FR2673494A1 (fr) 1992-09-04
GB2254208A (en) 1992-09-30
TW226481B (enExample) 1994-07-11
GB2254208B (en) 1995-01-11
CA2061142C (en) 2002-09-24
US5227781A (en) 1993-07-13
IL100878A (en) 1996-07-23
GB9204346D0 (en) 1992-04-08
KR920019081A (ko) 1992-10-22
CA2061142A1 (en) 1992-09-02
IT1258367B (it) 1996-02-26
IL100878A0 (en) 1992-11-15
FR2673494B1 (fr) 1997-11-21
ITRM920134A0 (it) 1992-02-28
ITRM920134A1 (it) 1993-08-28

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