KR100221900B1 - Semiconductor memory and method of operating same - Google Patents

Semiconductor memory and method of operating same Download PDF

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Publication number
KR100221900B1
KR100221900B1 KR1019910014129A KR910014129A KR100221900B1 KR 100221900 B1 KR100221900 B1 KR 100221900B1 KR 1019910014129 A KR1019910014129 A KR 1019910014129A KR 910014129 A KR910014129 A KR 910014129A KR 100221900 B1 KR100221900 B1 KR 100221900B1
Authority
KR
South Korea
Prior art keywords
semiconductor memory
operating same
operating
same
semiconductor
Prior art date
Application number
KR1019910014129A
Other languages
English (en)
Other versions
KR920005145A (ko
Inventor
Heinz-Peter Frerichs
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of KR920005145A publication Critical patent/KR920005145A/ko
Application granted granted Critical
Publication of KR100221900B1 publication Critical patent/KR100221900B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
KR1019910014129A 1990-08-21 1991-08-16 Semiconductor memory and method of operating same KR100221900B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4026408A DE4026408A1 (de) 1990-08-21 1990-08-21 Elektrisch programmier- und loeschbarer halbleiterspeicher und verfahren zu seinem betrieb
DEP4026408.4 1990-08-21

Publications (2)

Publication Number Publication Date
KR920005145A KR920005145A (ko) 1992-03-28
KR100221900B1 true KR100221900B1 (en) 1999-09-15

Family

ID=6412619

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910014129A KR100221900B1 (en) 1990-08-21 1991-08-16 Semiconductor memory and method of operating same

Country Status (4)

Country Link
EP (1) EP0472241B1 (ko)
JP (1) JPH04233769A (ko)
KR (1) KR100221900B1 (ko)
DE (2) DE4026408A1 (ko)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098681A (ja) * 1983-11-02 1985-06-01 Seiko Epson Corp 半導体記憶素子
JPS6254962A (ja) * 1985-09-04 1987-03-10 Nec Corp トランジスタ
JPS6413772A (en) * 1987-07-08 1989-01-18 Seiko Instr & Electronics Method of reading semiconductor non-volatile memory
JP2647101B2 (ja) * 1987-11-17 1997-08-27 株式会社東芝 不揮発性半導体メモリ装置
WO1990004855A1 (fr) * 1988-10-21 1990-05-03 Kabushiki Kaisha Toshiba Memoire a semi-conducteurs remanente et procede de production

Also Published As

Publication number Publication date
JPH04233769A (ja) 1992-08-21
DE59108977D1 (de) 1998-06-10
EP0472241A2 (de) 1992-02-26
DE4026408A1 (de) 1992-02-27
EP0472241A3 (en) 1993-01-07
EP0472241B1 (de) 1998-05-06
KR920005145A (ko) 1992-03-28

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