KR100212269B1 - Manufacturing method of liquid crystal display device - Google Patents

Abstract

The present invention relates to a method of manufacturing a liquid crystal display device for reducing the number of masking process to increase the yield and reduce the manufacturing cost. Stacking a conductive film on the substrate and forming a gate electrode and a first gate pad electrode using a first mask, stacking a gate insulating film on the entire surface, and stacking a semiconductor film and patterning using a second mask to form an active layer Forming a source film and forming a source / drain electrode by using a third mask after laminating a conductive film, laminating a protective film and then stacking a photoresist and patterning using a fourth mask to form a source / drain electrode. Simultaneously opening the passivation layer, forming a second gate pad electrode on the front surface including the first gate pad electrode exposed through the gate insulating layer opening, and simultaneously removing the photoresist and chromium by a lift-off method. In an operation, a transparent conductive material is stacked and then patterned using a fifth mask to form a pixel electrode and a third electrode. Forming a gate pad electrode.

Description

Manufacturing Method of Liquid Crystal Display

1 (a) to 1 (g) are cross-sectional views showing a gate pad portion of a thin film transistor substrate of a conventional liquid crystal display device according to a manufacturing process sequence.

2 (a) to 2 (g) are cross-sectional views showing channel portions of a thin film transistor substrate of a conventional liquid crystal display device according to a manufacturing process sequence.

3A to 3E are cross-sectional views of gate pad portions of a thin film transistor substrate of a liquid crystal display according to an exemplary embodiment of the present invention, in order of manufacturing process.

4 (a) to 4 (e) are cross-sectional views of channel portions of a thin film transistor substrate of a liquid crystal display according to an exemplary embodiment of the present invention, in order of manufacturing process.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display, and more specifically, to reduce the number of masking processes to increase yield and reduce manufacturing costs. To cover the aluminum exposed by etching the insulating film, and then simultaneously remove the photoresist and chromium deposited on the photoresist through a photoresist strip, and connect chromium and ITO during pixel electrode patterning. It is about.

In general, a liquid crystal display includes a plurality of pixel units formed of a thin film transistor and a pixel electrode in a matrix form, and a gate line and a data line are formed along rows and columns of pixel units, respectively. A thin film transistor substrate as a substrate, a color filter substrate as a lower substrate of a liquid crystal display device having a common electrode formed thereon, and a liquid crystal material enclosed therebetween.

The gate electrode of the thin film transistor substrate receives a gate driving signal from the gate driving drive through the gate pad portion to form a channel in the semiconductor layer. Accordingly, a data signal from the data driving drive is transferred to the source electrode through the data pad portion, It is transferred to the pixel electrode through the layer and the drain electrode.

Such a liquid crystal display device is conventionally manufactured by the following method.

1A to 1E are cross-sectional views of gate pad portions of a thin film transistor substrate of a conventional liquid crystal display device according to a manufacturing process sequence, and FIGS. 2A to 2G are conventional liquid crystal displays. It is sectional drawing which showed the channel part of the thin film transistor substrate of an apparatus according to a manufacturing process sequence.

A method of manufacturing a thin film transistor substrate of a conventional liquid crystal display device will be described with reference to FIGS. 1 to 2.

Stacking a conductive film on the substrate 10 and patterning it using a first mask to form a gate electrode 12 and a first gate pad electrode 14,

Forming a gate oxide layer 16 by oxidizing a front surface of the gate electrode 12 and a portion of the first gate pad electrode 14 using a second mask, forming a gate insulating film 18 on the front surface,

Stacking semiconductors and patterning them using a third mask to form an amorphous silicon film 20,

Etching the insulating film 18 of the gate pad part using the amorphous silicon film 20 as a fourth mask;

Stacking the conductive film and patterning the same using a fifth mask to form a source / drain electrode 22 and a second gate pad electrode 24;

Stacking the passivation layer and patterning the passivation layer 26 to expose the second gate pad electrode 24 by patterning using a sixth mask,

Stacking the transparent electrodes and patterning the same using a seventh mask to form the pixel electrode 28 and the third gate pad electrode 30.

However, this method has a disadvantage in that an increase in cost and a decrease in yield due to a masking process occur because the seven masks are used.

In order to solve this disadvantage, a method of omitting the gate oxide process and simultaneously etching the contact and the protective layer has been proposed.

However, since the contact and the passivation layers are etched at the same time, the contact between the gate aluminum and the pixel electrode ITO is inevitable, and the etching of the gate aluminum occurs due to the etching liquid, thereby degrading the image quality of the liquid crystal display.

Therefore, a method of forming a gate with a double layer made of chromium and aluminum, and in the subsequent process, a method of finally connecting chromium and ITO through aluminum front etching has been proposed.

However, in this case, step coverage increases due to an increase in the thickness of the gate line, and chromium erosion and chromium surface oxidation occur due to the selectivity of aluminum and chromium when the entire aluminum surface is etched.

Therefore, an object of the present invention is to solve the problems of the prior art, at the same time open the gate low smoke layer and the protective film during the patterning of the protective film, by depositing chromium before the photoresist strip to cover the aluminum exposed by the etching of the insulating film The present invention provides a method of manufacturing a liquid crystal display device using a five-mask mask that simultaneously removes photoresist and chromium deposited on the photoresist through a resistor strip and connects chromium and ITO during pixel electrode patterning.

The present invention for achieving the above object, the step of forming a gate electrode and a first gate pad electrode by using a first mask after laminating a conductive film on a substrate,

Stacking a gate insulating film on the front surface,

Stacking the semiconductor films and patterning them using a second mask to form an active layer,

Stacking the conductive films and patterning them using a third mask to form source / drain electrodes,

Stacking a passivation layer and then laminating a photoresist and patterning the same using a fourth mask to simultaneously open the gate insulating layer and the passivation layer;

Forming a second gate pad electrode on a front surface thereof, including the first gate pad electrode exposed through the gate insulating layer opening;

Simultaneously removing the photoresist and chromium by a lift-off method;

Stacking the transparent conductive material and patterning the semiconductor substrate using a fifth mask to form a pixel electrode and a third gate pad electrode.

With reference to the accompanying drawings, it will be described in detail an embodiment of the present invention to be easily carried out by those skilled in the art.

3A to 3E are cross-sectional views illustrating gate pad portions of a thin film transistor substrate of a liquid crystal display according to an exemplary embodiment of the present invention, in order of manufacturing process. e) is a cross-sectional view showing the channel portion of the thin film transistor substrate of the liquid crystal display according to the embodiment of the present invention according to the manufacturing process sequence.

First, as shown in FIGS. 3 (a) and 4 (a), the aluminum, which is a conductive film, is laminated on the substrate 100, and then the gate electrode 102 and the first gate pad are formed using a first mask. Electrode 104 is formed.

Next, as shown in FIGS. 3 (b) and 4 (b), the gate insulating film 106 is laminated on the entire surface.

Next, an amorphous silicon film 108, which is a semiconductor film, is stacked and then patterned using a second mask to form an active layer.

Next, as shown in FIGS. 3 (c) and 4 (c), the chromium film, which is a conductive film, is laminated and then patterned using a third mask to form the source / drain electrodes 110.

Next, as shown in FIGS. 3 (d) and 4 (d), the protective film 112 is laminated, and then the photoresist 114 is laminated, and then patterned using a fourth mask to form the gate insulating film ( 106 and the protective film 112 are opened at the same time.

Next, the chromium film 116 is formed on the entire surface of the substrate 100 including the first gate pad electrode 104 exposed through the opening of the gate insulating film 106. 2000 The second gate pad electrode 117 is formed to a thickness of.

Next, as shown in FIGS. 3E and 4E, the photoresist 114 is removed by a lift-off method. Then, the chromium film 116 on the photoresist 114 is also removed. At this time, as shown in FIG. 4 (d), the chromium film 116 remains on the drain electrode 110.

Next, the ITO film, which is a transparent conductive material, is stacked and patterned using a fifth mask to form the pixel electrode 118 and the third gate pad electrode 120.

Therefore, since the present invention uses five masks, the yield can be increased and the manufacturing cost can be reduced.

Claims (4)

Forming a gate electrode and a first gate pad electrode by using a conductive film on the substrate, laminating a gate insulating film on the front surface, forming a semiconductor layer by laminating and patterning a semiconductor film, forming an active layer by laminating a conductive film, and then patterning the source / Forming a drain electrode, laminating a protective film, and then laminating and patterning a photo resist to open the gate insulating film and the protective film at the same time to expose the first gate pad electrode, the first exposed through the gate insulating film open Forming a second gate pad electrode by stacking chromium on the entire surface of the substrate including a gate pad electrode, and simultaneously removing the photoresist and the chromium on the photoresist through a lift-off method; a transparent conductive material Stacked and patterned to form a pixel electrode and a third gate pattern Method for manufacturing a liquid crystal display device comprising the step of forming an electrode. The method of claim 1, wherein the first gate pad electrode is formed of aluminum. The method of claim 1, wherein the second gate pad electrode is disposed at 500. 2000 The manufacturing method of the liquid crystal display device formed in thickness. The method of claim 1, wherein the third gate pad electrode is formed of ITO.