KR0179781B1 - Cleaning apparatus of semiconductor wafer - Google Patents

Cleaning apparatus of semiconductor wafer Download PDF

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Publication number
KR0179781B1
KR0179781B1 KR1019950051994A KR19950051994A KR0179781B1 KR 0179781 B1 KR0179781 B1 KR 0179781B1 KR 1019950051994 A KR1019950051994 A KR 1019950051994A KR 19950051994 A KR19950051994 A KR 19950051994A KR 0179781 B1 KR0179781 B1 KR 0179781B1
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South Korea
Prior art keywords
cleaning liquid
cleaning
inner tank
wafer
semiconductor wafer
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KR1019950051994A
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Korean (ko)
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KR970052649A (en
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한석빈
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문정환
엘지반도체주식회사
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Priority to KR1019950051994A priority Critical patent/KR0179781B1/en
Priority to US08/769,059 priority patent/US5673713A/en
Priority to JP8339316A priority patent/JP2762075B2/en
Priority to CN96114249A priority patent/CN1083153C/en
Publication of KR970052649A publication Critical patent/KR970052649A/en
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Publication of KR0179781B1 publication Critical patent/KR0179781B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

본 발명은 반도체 웨이퍼 세정장치에 관한 것으로, 종래의 반도체 웨이퍼 세정장치는 웨이퍼를 세정하기 위하여 내조의 상면까지 세정액을 공급하여 세정액이 외조로 흘러넘치도록 하는 방식으로 실제 세정되는 웨이퍼 높이 이상까지 세정액을 공급하여야 하므로 세정액을 절감하는데 한계가 있는 문제점이 있었던 바, 본 발명은 하부내조(11)의 상부에 형상기억합금으로된 상부내조(12)를 설치하고, 그 상부내조(13)의 사면 단부에 힌지수단(13)을 구비한 로봇 암(14)을 설치하여 세정시 소정온도의 세정액으로 상부내조의 내측 공간을 줄여서 세정을 실시함으로써 세정액을 절감하는 효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer cleaning apparatus, and a conventional semiconductor wafer cleaning apparatus supplies cleaning liquid to the upper surface of the inner tank to clean the wafer, so that the cleaning liquid can be flushed to the height of the wafer or more to be actually cleaned in such a manner that the cleaning liquid flows into the outer tank. The present invention has a problem in that there is a limit in reducing the cleaning liquid, the present invention is installed in the upper inner tank 12 made of a shape memory alloy on the upper portion of the lower inner tank 11, the end of the slope of the upper inner tank 13 By installing the robot arm 14 provided with the hinge means 13, the cleaning liquid is reduced by reducing the inner space of the upper inner tank with the cleaning liquid at a predetermined temperature during cleaning.

Description

반도체 웨이퍼 세정장치Semiconductor Wafer Cleaning Equipment

제1도는 종래 반도체 웨이퍼 세정장치의 구성을 보인 개략 구성도.1 is a schematic block diagram showing the structure of a conventional semiconductor wafer cleaning apparatus.

제2도는 본 발명 반도체 웨이퍼 세정장치의 구성을 보인 사시도.2 is a perspective view showing the configuration of the semiconductor wafer cleaning apparatus of the present invention.

제3도는 본 발명 반도체 웨이퍼 세정장치의 웨이퍼 투입시를 보인 것으로,3 shows a wafer input of the semiconductor wafer cleaning apparatus of the present invention.

(a)는 단면도.(a) is a cross-sectional view.

(b)는 평면도.(b) is a plan view.

제4도는 본 발명 반도체 웨이퍼 세정장치의 세정액 공급시를 보인 것으로,4 shows the cleaning liquid supply time of the semiconductor wafer cleaning apparatus of the present invention.

(a)는 단면도.(a) is a cross-sectional view.

(b)는 평면도.(b) is a plan view.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

10a : 공급라인 10b : 배출라인10a: supply line 10b: discharge line

10 : 외조 11 : 하부내조10: outer tank 11: lower inner tank

12 : 상부내조 13 : 힌지부재12: upper inner tub 13: hinge member

14 : 로봇 암 15 : 콘트롤 박스14: robot arm 15: control box

16 : 배플 플래이트 17 : 펌프16: baffle plate 17: pump

18 : 필터18: filter

본 발명은 반도체 웨이퍼 세정장치에 관한 것으로, 특히 하부내조의 상부에 형상기억합금으로된 상부내조를 설치하여 웨이퍼 세정시 세정공간을 줄임으로서 세정액을 절감할 수 있고, 세정효과를 증대시킬 수 있도록 하는데 적합한 반도체 웨이퍼 세정장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer cleaning apparatus, and in particular, by installing an upper inner tank made of a shape memory alloy on an upper portion of a lower inner tank, the cleaning space can be reduced by reducing the cleaning space during wafer cleaning, and the cleaning effect can be increased. A suitable semiconductor wafer cleaning apparatus is disclosed.

최근에 반도체 공정기술이 발전함에 따라 웨이퍼 세정기술의 중요성이 증가하고 있으며, 세정장치의 중요성이 크게 부각되고 있다. 특히 세정조에 유입되는 세정수 및 세정액을 절감하려는 노력은 부단히 진행되고 있다. 세정수 및 세정액의 절감과 세정효과의 증대는 세정조 개발의 가장 큰 목표중의 하나라고 할 수 있다.Recently, with the development of semiconductor processing technology, the importance of the wafer cleaning technology has increased, and the importance of the cleaning device has been highlighted. In particular, efforts to reduce the amount of cleaning water and the cleaning liquid flowing into the cleaning tank is constantly progressing. The reduction of the washing water and the cleaning liquid and the increase of the cleaning effect are one of the biggest goals of the cleaning tank development.

제1도는 종래 반도체 웨이퍼 세정장치의 구성을 보인 개략구성도로서, 도시된 바와 같이, 종래의 반도체 웨이퍼 세정장치는 하부에 세정액 공급라인(1a)과 세정액 배출라인(1b)이 설치되어 있는 외조(1)의 내부에 내조(2)가 설치되어 있고, 그 내조(2)의 내부에는 웨이퍼(W)에 공급되는 세정액을 분배하기 위한 배플 플래이트(BAFFLE PLATE)(3)가 설치되어 있으며, 상기 공급라인(1a) 상에는 세정액을 펌핑하기 위한 펌프(PUMP)(4)가 설치되어 있다.FIG. 1 is a schematic block diagram showing the structure of a conventional semiconductor wafer cleaning apparatus. As shown in the drawing, the conventional semiconductor wafer cleaning apparatus includes an outer tank having a cleaning liquid supply line 1a and a cleaning liquid discharge line 1b disposed below. An inner tank 2 is provided inside 1), and a baffle plate 3 for dispensing the cleaning liquid supplied to the wafer W is provided inside the inner tank 2, and the supply is made. On the line 1a, a pump (PUMP) 4 for pumping the cleaning liquid is provided.

상기와 같이 구성되어 있는 종래 반도체 웨이퍼 세정장치를 이용하여 웨이퍼를 세정하는 동작을 설명하면 다음과 같다.The operation of cleaning the wafer using the conventional semiconductor wafer cleaning apparatus configured as described above is as follows.

먼저, 세정할 웨이퍼(W)를 내조(2)의 내부에 위치시키고, 외조(1)의 하부에 설치되어 있는 공급라인(1a)을 통하여 펌프(4)로 펌핑함으로써 내조(2)의 내부로 세정액을 공급하여 웨이퍼(W)에 부착되어 있는 이물질을 제거한다.First, the wafer W to be cleaned is placed inside the inner tank 2 and pumped into the inner tank 2 by pumping it to the pump 4 through the supply line 1a provided under the outer tank 1. The cleaning liquid is supplied to remove foreign substances adhering to the wafer (W).

이때, 상기 내조(2)에 공급되는 세정액은 배플 플레이트(3)에 형성되어 있는 다수개의 분배홀에 의하여 공급되는 양 및 세기가 적절히 분배되어 웨이퍼(W)들을 세정하며, 이와 같이 세정액이 내조(2)에 계속 공급되고 내조(2)에 가득 채워지면 세정액이 흘러넘쳐서 외조(1)로 유출되게 되며, 이와 같이 유출된 세정액은 다시 외조(1)의 하부로 배출되어 공급라인(1a)에 설치된 펌프(4)에 의하여 펌핑되어 필터에 의해 정화되면서 재공급 되게 되는데, 만약 세정액의 오염이 심할 경우에는 세정장치의 외부로 유출하여 폐기한다.At this time, the cleaning liquid supplied to the inner tank 2 is properly distributed in quantity and intensity supplied by the plurality of distribution holes formed in the baffle plate 3 to clean the wafers W. 2) is supplied continuously and filled with the inner tank (2) overflows the washing liquid flows out to the outer tank (1), the drained washing liquid is discharged again to the lower portion of the outer tank (1) installed in the supply line (1a) It is pumped by the pump 4 and purified by a filter to be resupplied. If the contamination of the cleaning liquid is severe, it is discharged to the outside of the cleaning device and discarded.

그러나, 상기와 같은 반도체 웨이퍼 세정장치는 웨이퍼(W)를 세정하기 위하여 내조(2)의 상면까지 세정액을 공급하여 세정액이 외조로 흘러 넘치도록 하는 방식으로 실제 세정되는 웨이퍼(W) 높이 이상의 내조(2)의 상단까지 세정액을 공급하여야 하므로 세정액을 절감하는데 한계가 있는 문제점이 있었고, 또한 불필요한 부분까지 세정하게 되어 웨이퍼(W)의 에지부분을 세정하는 것은 세정효과가 떨어지는 문제점이 있었다.However, the semiconductor wafer cleaning apparatus as described above supplies the cleaning liquid to the upper surface of the inner tank 2 in order to clean the wafer W so that the cleaning liquid flows into the outer tank so that the inner tank of the wafer W that is actually cleaned (the height of the wafer W) Since the cleaning liquid must be supplied to the upper end of 2), there is a problem in that the cleaning liquid is reduced. In addition, cleaning to the unnecessary portion has a problem in that the cleaning effect is reduced.

상기와 같은 문제점을 감안하여 안출한 본 발명의 목적은 하부내조의 상부에 형상기억합금으로된 상부내조를 설치하여 웨이퍼 세정시 상부내조가 내측으로 구부러져서 공간을 줄임으로서 소요되는 세정액의 양을 절감하고, 세정효과를 향상시키도록 하는데 적합한 반도체 웨이퍼 세정장치를 제공함에 있다.An object of the present invention devised in view of the above problems is to install an upper inner tank made of a shape memory alloy on the upper part of the lower inner tank to reduce the amount of cleaning liquid required by reducing the space by bending the upper inner tank during the wafer cleaning. To provide a semiconductor wafer cleaning apparatus suitable for improving the cleaning effect.

상기와 같은 본 발명의 목적을 달성하기 위하여 세정액을 공급하기 위한 공급라인과 세정액을 배출하기 위한 배출라인이 구비된 외조의 내부에 하부내조가 설치되고, 그 하부내조의 상부에 형상기억합금으로된 상부내조가 설치되며, 그 상부내조의 단부에는 각각 힌지수단을 구비한 로봇 암이 설치되고, 그 각각의 로봇 암에는 로봇 암을 조정하기 위한 콘트롤 박스가 연결설치되며, 상기 상, 하부 내조의 내부에는 세정액을 분배하기 위한 배플 플레이트가 설치되고, 상기 공급라인 상에는 세정액을 펌핑하기 위한 펌프와, 이물질을 제거하기 위한 펌프가 각각 설치되어서 구성된 것을 특징으로 하는 반도체 웨이퍼 세정장치가 제공된다.In order to achieve the object of the present invention as described above, the lower inner tank is installed in the outer tank provided with a supply line for supplying the cleaning liquid and a discharge line for discharging the cleaning liquid, and formed of a shape memory alloy on the upper portion of the lower inner tank. An upper inner tub is installed, and a robot arm having hinge means is installed at each end of the upper inner tub, and a control box for adjusting the robot arm is connected to each robot arm, and the upper and lower inner tubs are connected to each other. There is provided a baffle plate for dispensing the cleaning liquid, and a pump for pumping the cleaning liquid and a pump for removing the foreign matter are provided on the supply line, respectively.

이하, 상기와 같이 구성되어 있는 본 발명 반도체 웨이퍼 세정장치의 실시예를 첨부된 도면을 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, with reference to the accompanying drawings an embodiment of the semiconductor wafer cleaning apparatus of the present invention configured as described above in detail as follows.

제2도는 본 발명 반도체 웨이퍼 세정장치의 구성을 보인 사시도로서, 도시된 바와 같이, 본 발명의 반도체 웨이퍼 세정장치는 하부에 세정액을 공급하기 위한 공급라인(10a)과 세정액을 배출하기 위한 배출라인(10b)이 구비된 외조(10)의 내부에 하부내조(11)가 설치되어 있고, 그 하부내조(11)의 단부에는 형상기억합금으로된 상부내조(12)가 설치되어 있으며, 그 상부내조(12)의 단부에는 경첩 또는 고리형태로 절첩가능한 힌지수단(13)을 구비한 로봇 암(14)이 사면에 각각 설치되어 있다.2 is a perspective view showing the configuration of the semiconductor wafer cleaning apparatus of the present invention. As shown in the drawing, the semiconductor wafer cleaning apparatus of the present invention has a supply line 10a for supplying a cleaning liquid to the lower portion and a discharge line for discharging the cleaning liquid ( The lower inner tank 11 is provided inside the outer tub 10 provided with 10b), and an upper inner tub 12 made of a shape memory alloy is installed at the end of the lower inner tub 11, and the upper inner tub ( At the end of the robot 12, robot arms 14 each provided with hinge means 13 which can be folded in a hinge or ring form are provided on four slopes.

그리고, 상기 로봇 암(14)에는 그 로봇 암(14)을 조정하기 위한 콘트롤 박스(15)가 설치되어 있고, 상기 상, 하부내조(12)(11)의 내부에는 공급라인(10a)에서 공급되는 세정액을 골고루 웨이퍼(W)에 분배되도록 조절하는 분배홀(도시되어 있지 않음)을 구비한 배플 플래이트(16)가 설치되어 있으며, 상기 공급라인(10a) 상에는 세정액을 펌핑하기 위한 펌프(17)와 이물질을 제거하기 위한 펌프(18)가 각각 설치되어 있다.The robot arm 14 is provided with a control box 15 for adjusting the robot arm 14, and is supplied from the supply line 10a inside the upper and lower inner tubs 12 and 11. A baffle plate 16 having a distribution hole (not shown) for adjusting the cleaning solution to be evenly distributed on the wafer W is provided, and a pump 17 for pumping the cleaning solution on the supply line 10a. And a pump 18 for removing the foreign matter is provided respectively.

상기와 같이 구성되어 있는 본 발명 반도체 웨이퍼 세정장치를 이용하여 웨이퍼를 세정하는 동작을 제3도 및 제4도를 참조하여 설명하면 다음과 같다.An operation of cleaning the wafer using the semiconductor wafer cleaning apparatus of the present invention configured as described above will be described with reference to FIGS. 3 and 4 as follows.

제3도의 (a)(b)는 세정조의 내부에 세정하기 위한 웨이퍼(W) 투입시의 상태를 보인 것으로, 이와 같이 로봇 암(14)에 의해 상부내조(12)가 펼쳐져서 하부내조(11)와 일직선이 되도록 한 상태에서 세정할 웨이퍼(W)를 웨이퍼 척을 이용하여 상, 하부내조(12)(11)의 내부로 이동시킨다.(A) and (b) of FIG. 3 show the state when the wafer W is put into the cleaning tank to be cleaned, and thus the upper inner tank 12 is unfolded by the robot arm 14 so that the lower inner tank 11 is opened. ), The wafer W to be cleaned is moved into the upper and lower inner tubs 12 and 11 using a wafer chuck.

그런 다음, 약 40~50℃ 이상의 세정액을 공급라인(10a)을 통하여 상, 하부내조(12)(11)로 투입하면 제4도의 (a)(b)와 같이 웨이퍼(W)의 형상과 동일하게 기억되어진 형상기억합금으로된 상부내조(12)가 내측을 향하여 웨이퍼(W) 모양으로 구부러진다. 이때 상부내조(12)의 내측과 웨이퍼(W)의 거리는 1mm 이상을 유지해야 한다.Then, when the cleaning liquid of about 40 to 50 ° C. or higher is introduced into the upper and lower inner tanks 12 and 11 through the supply line 10a, the shape of the wafer W is the same as in FIG. 4 (a) (b). The upper inner tub 12 made of the shape memory alloy is bent in the shape of a wafer W toward the inside. At this time, the distance between the inside of the upper inner tank 12 and the wafer (W) should be maintained at least 1mm.

상기와 같이 상부내조(12)가 내측으로 웨이퍼의 모양과 동일하게 구부러져 공간이 좁아진 상태에서 세정액을 계속 공급하여 웨이퍼(W)에 부착되어 있는 이물질을 제거하게 되면 종래보다 적은 양의 세정액으로 세정을 실시할 수 있으며, 이와 같이 공급되는 세정액은 상부내조(12)를 흘러넘쳐서 외조(10)의 하부에 설치되어 있는 배출라인(10b)을 통하여 배출된다.As described above, when the upper inner tub 12 is bent inwardly in the same shape as the shape of the wafer and the cleaning liquid is continuously supplied to remove the foreign matter adhering to the wafer W, the cleaning is performed with a smaller amount of cleaning liquid than before. It can be carried out, the cleaning liquid supplied in this way flows through the upper inner tank 12 is discharged through the discharge line (10b) is installed in the lower portion of the outer tank (10).

그리고, 상기와 같이 소정시간 세정을 실시하고 난 후에는 로봇 암(14)을 후진시켜 상부내조(12)를 하부내조(11)와 일직선이 되도록 하고, 웨이퍼 척을 이용하여 웨이퍼(W)를 장치의 밖으로 이동시켜서 다음공정으로 이동시킨다.After cleaning for a predetermined time as described above, the robot arm 14 is retracted so that the upper inner tank 12 is aligned with the lower inner tank 11, and the wafer W is installed using the wafer chuck. Move out to next step.

상기의 실시예에서는 세정이 끝난 후 형상기억합금으로된 상부내조(12)를 로봇 암(14)을 이용하여 하부내조(11)과 일직선이 되도록 하였으나, 꼭 그에 한정하는 것은 아니며, 상부내조(12)의 단부에 스프링과 같은 탄성부재를 이용하여 세정이 끝난 후 상부내조(12)를 하부내조(11)와 일직선이 되도록 할 수도 있다.In the above embodiment, the upper inner tub 12 made of the shape memory alloy is aligned with the lower inner tub 11 using the robot arm 14 after cleaning, but is not limited thereto, and the upper inner tub 12 is not limited thereto. The upper inner tub 12 may be aligned with the lower inner tub 11 after the cleaning is completed by using an elastic member such as a spring at the end of the bottom.

이상에서 상세히 설명한 바와 같이 본 발명의 반도체 웨이퍼 세정장치는 하부내조의 상부에 형상기억합금으로된 상부내조를 설치하고, 그 상부내조의 사면 단부에 힌지수단을 구비한 로봇 암을 각각 설치하여 세정시 상, 하부내조의 내측 공간을 줄여서 세정을 실시함으로써 세정액을 절감하는 효과가 있고, 웨이퍼의 세정효과를 향상시키는 효과가 있다.As described in detail above, in the semiconductor wafer cleaning apparatus of the present invention, an upper inner tank made of a shape memory alloy is installed on an upper portion of a lower inner tank, and a robot arm having a hinge means is provided at the end of the slope of the upper inner tank, respectively. Cleaning is performed by reducing the inner space of the upper and lower inner tubs, thereby reducing the cleaning liquid and improving the cleaning effect of the wafer.

Claims (2)

세정액을 공급하기 위한 공급라인과 세정액을 배출하기 위한 배출라인이 구비된 외조의 내부에 하부내조가 설치되고, 그 하부내조의 상부에 형상기억합금으로된 상부내조가 설치되며, 그 상부내조의 단부에는 각각 힌지수단을 구비한 로봇 암이 설치되고, 그 각각의 로봇 암에는 로봇 암을 조정하기 위한 콘트롤 박스가 연결설치되며, 상기 상, 하부 내조의 내부에는 세정액을 분배하기 위한 배플 플래이트가 설치되고, 상기 공급라인 상에는 세정액을 펌핑하기 위한 펌프가 설치되어서 구성된 것을 특징으로 하는 반도체 웨이퍼 세정장치.A lower inner tank is installed inside the outer tank having a supply line for supplying the cleaning liquid and a discharge line for discharging the cleaning liquid, and an upper inner tank made of a shape memory alloy is installed on the upper portion of the lower inner tank, and an end portion of the upper inner tank is provided. Each robot arm is provided with hinge means, and each robot arm is provided with a control box for adjusting the robot arm, and a baffle plate for dispensing the cleaning liquid is installed inside the upper and lower inner tanks. And a pump for pumping a cleaning liquid is installed on the supply line. 제1항에 있어서, 상기 상부내조는 공정진행시 웨이퍼와 1mm 이상 거리가 유지되도록 변형되는 것을 특징으로 하는 반도체 웨이퍼 세정장치.The semiconductor wafer cleaning apparatus according to claim 1, wherein the upper inner tub is deformed to maintain a distance of 1 mm or more from the wafer during the process.
KR1019950051994A 1995-12-19 1995-12-19 Cleaning apparatus of semiconductor wafer KR0179781B1 (en)

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KR1019950051994A KR0179781B1 (en) 1995-12-19 1995-12-19 Cleaning apparatus of semiconductor wafer
US08/769,059 US5673713A (en) 1995-12-19 1996-12-18 Apparatus for cleansing semiconductor wafer
JP8339316A JP2762075B2 (en) 1995-12-19 1996-12-19 Cleaning equipment for semiconductor wafers
CN96114249A CN1083153C (en) 1995-12-19 1996-12-19 Apparatus for cleansing semiconductor wafer

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018124725A1 (en) 2016-12-27 2018-07-05 주식회사 윌러스표준기술연구소 Wireless communication method using ofdma random access and wireless communication terminal using same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018124725A1 (en) 2016-12-27 2018-07-05 주식회사 윌러스표준기술연구소 Wireless communication method using ofdma random access and wireless communication terminal using same

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