KR0178191B1 - Lightpath modulation device - Google Patents
Lightpath modulation device Download PDFInfo
- Publication number
- KR0178191B1 KR0178191B1 KR1019940015344A KR19940015344A KR0178191B1 KR 0178191 B1 KR0178191 B1 KR 0178191B1 KR 1019940015344 A KR1019940015344 A KR 1019940015344A KR 19940015344 A KR19940015344 A KR 19940015344A KR 0178191 B1 KR0178191 B1 KR 0178191B1
- Authority
- KR
- South Korea
- Prior art keywords
- optical path
- driving substrate
- path control
- heater
- control device
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000005192 partition Methods 0.000 claims abstract description 18
- 230000008859 change Effects 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims abstract description 4
- 239000011159 matrix material Substances 0.000 claims abstract description 4
- 230000009257 reactivity Effects 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000000919 ceramic Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/02—Function characteristic reflective
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Abstract
본 발명은 광로조절장치에 관한 것으로서, 트랜지스터들이 매트릭스 형태로 내장되고 표면에 각각의 트랜지스터에 전기적으로 연결된 패드를 갖는 구동기판과; 상기 구동기판의 상부에 박막의 저항성금속이 형성되며 일측 끝단이 상기 패드 연결되는 히터와; 상기 구동기판의 상부에 한 쌍의 상기 패드 및 상기 히터 각각의 둘레를 에워싸 각각의 화소를 한정하는 격벽과; 상기 격벽내의 히터 상부에 형성되며 온도 변화에 따른 표면장력 또는 압력의 변화가 크고 반응성이 좋지않은 안정한 액체로 이루어진 변형부와; 상기 격벽의 상부에 상기 변형부와 접촉되어 상기 변형부의 표면장력 또는 압력에 의해 기울기가 조절되는 반사특성이 양호한 물질로 형성된 거울면을 구비한다. 따라서, 격벽을 반도체공정으로 한정할 수 있으므로 공정시간이 짧아져 생산성이 향상되며, 미세패턴으로 형성할 수 있으므로 화소의 크기를 감소시킬 수 있다.The present invention relates to an optical path control device, comprising: a driving substrate having transistors embedded in a matrix and having pads electrically connected to respective transistors on a surface thereof; A heater having a thin film of resistive metal formed on the driving substrate and having one end connected to the pad; Barrier ribs surrounding respective pairs of the pads and the heaters to define respective pixels on an upper portion of the driving substrate; A deformable part formed on the heater in the partition wall and made of a stable liquid having a large change in surface tension or pressure according to temperature change and poor reactivity; An upper surface of the partition wall is provided with a mirror surface formed of a material having good reflection characteristics in contact with the deformable portion and having an inclination adjusted by surface tension or pressure of the deformable portion. Therefore, since the partition wall can be limited to the semiconductor process, the process time can be shortened, the productivity can be improved, and since the partition can be formed into a fine pattern, the size of the pixel can be reduced.
Description
제1도는 종래 광로조절수단의 단면도.1 is a cross-sectional view of a conventional optical path adjusting means.
제2도는 본 발명에 따른 광로조절장치의 단면도.2 is a cross-sectional view of the optical path control apparatus according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
30 : 광로조절장치 31 : 구동기판30: optical path control device 31: driving substrate
33 : 패드 35 : 히터33: pad 35: heater
36 : 보호막 37 : 격벽36: shield 37: partition
39 : 변형부 41 : 거울면39: deformation portion 41: mirror surface
본 발명의 투사형표시기에 이용되는 광로조절장치에 관한 것으로서, 특히, 액체의 표면장력을 조절하여 광의 경로를 변경할 수 있는 광로조절장치에 관한 것이다.The present invention relates to an optical path adjusting device used in the projection display of the present invention, and more particularly, to an optical path adjusting device that can change a path of light by adjusting a surface tension of a liquid.
화상표시장치는 표시방법에 따라 직시형 표시장치와 투사형 표시장치로 구분된다. 직시형 화상표시장치는 CRT(Cathode Ray Tube)등이 있는데, 이러한 CRT 화상표시장치는 화질은 좋으나 화면이 커짐에 따라 중량 및 두께의 증대와, 가격이 비싸지는 등의 문제점이 있어 대화면을 구비하는데 한계가 있다. 투사형 화상표시장치는 대화면 액정표시장치(Liquid Crystal Display: 이하 LCD라 칭함)등이 있는데, 이러한 대화면 LCD 의 박형화가 가능하여 중량을 작게 할 수 있다. 그러나, LCD는 편광판에 의한 광손실이 크고 LCD를 구동하기 위한 박막트랜지스터가 화소마가 형성되어 있어 개구율(광의 투과면적)을 높이는데 한계가 있으므로 광의 효율이 매우 낮다.The image display device is classified into a direct view display device and a projection display device according to a display method. The direct view type image display device includes a CRT (Cathode Ray Tube), but the CRT image display device has good image quality but has a problem such as an increase in weight and thickness as the screen is enlarged, and a price is expensive. There is. Projection type image display apparatuses include a large crystal display (hereinafter referred to as an LCD), and such a large-screen LCD can be thinned to reduce the weight. However, the LCD has a high light loss due to the polarizing plate, and since the thin film transistor for driving the LCD has a pixel edge, there is a limit to increase the aperture ratio (light transmission area), so the light efficiency is very low.
따라서, 광의 효율을 향상시키기 위한 PDP(Plasma Display Panel), EL(Elec tro Luminescence) 소자 및 AMA(Actuated Mirror Array)등과 같은 투사형 화상표시장치가 연구개발되고 있다.Accordingly, a projection type image display apparatus such as a plasma display panel (PDP), an electron luminescence (EL) element, an activated mirror array (AMA), or the like has been researched and developed to improve light efficiency.
제1도는 종래의 AMA를 이용한 투사형 화상표시장치의 광로조절장치(10)의 단면도이다.1 is a cross-sectional view of an optical path control apparatus 10 of a projection image display apparatus using a conventional AMA.
상기 광로조절장치(10)는 구동기판(11), 액츄에이터(14) 및 거울면(23)을 포함한다.The optical path control apparatus 10 includes a driving substrate 11, an actuator 14, and a mirror surface 23.
구동기판(11)은 유리 또는 Al2O3등의 절연물질이나, 또는, 실리콘 등의 반도체로 이루어지며 화소들마다 트랜지스터(도시되지 않음)를 갖는다. 또한, 구동기판(11)은 표면에 트랜지스터와과 전기적으로 연결된 패드(13)가 형성되어 있다.The driving substrate 11 is made of an insulating material such as glass or Al 2 O 3 , or a semiconductor such as silicon, and has a transistor (not shown) for each pixel. In addition, the driving substrate 11 has a pad 13 electrically connected to the transistor on the surface thereof.
액츄에이터(14)는 상기 제1 및 제2변형부들(15)(17)과 신호 및 바이어스전극들(19)(21)로 이루어진다. 상기에서 제1 및 제2변형부들(15)(17)은 각기 L자 모양을 가지며 거울상으로 배치되어 철(##)모양으로 기판(11)상에 실장되어 있다. 상기 제1 및 제2변형부들(15)(17)은 압전세라믹으로 이루어져 있으며, 상부에 거울면(23)이 실장되어 있다. 제1 및 제2변형부들(15)(17)의 사이에 신호전극(19)이, 이 신호전극(19)의 대향하는 표면에는 바이어스전극(21)들이 형성되어 있다. 신호 및 바이어스전극들(19)(21)은 금속 등의 도전성 물질로 형성된다. 상기에서 제1 및 제2변형부들(15)(17)은 신호전극(19)과 수직을 이루는 일측방향으로 분극(polarization)되어 있다. 신호전극(19)은 패드(13)와 접촉되어 전기적으로 연결되며, 바이어스전극(21)은 외부도선 패턴(도시되지 않음)에 의해 인접하는 광로조절장치의 바이어스전극들과 연결되어 있다.The actuator 14 is composed of the first and second deformation parts 15 and 17 and the signal and bias electrodes 19 and 21. The first and second deformable parts 15 and 17 have an L shape and are disposed in a mirror shape and mounted on the substrate 11 in the form of iron (##). The first and second deformation parts 15 and 17 are made of piezoelectric ceramics, and a mirror surface 23 is mounted on an upper portion thereof. A signal electrode 19 is formed between the first and second deformation parts 15 and 17, and bias electrodes 21 are formed on a surface of the signal electrode 19 that faces the signal electrode 19. The signal and bias electrodes 19 and 21 are formed of a conductive material such as metal. The first and second deformation parts 15 and 17 are polarized in one direction perpendicular to the signal electrode 19. The signal electrode 19 is in contact with the pad 13 to be electrically connected, and the bias electrode 21 is connected to the bias electrodes of the adjacent optical path control apparatus by an external conductor pattern (not shown).
상술한 광로조절장치(10)는 구동기판(11)과 패드(13)를 통해 외부회로(도시되지 않음)로 부터 화상신호인 전압이 인가되면 제1 및 제2변형부들(15)(17)을 변형된다. 즉, 예를들면, 제1변형부(15)에서 제2변형부(17) 방향으로 분극된 상태에서 신호전극(19)에 신호전압을 인가하면 분극방향과 전계방향은 제1변형부(17)에서는 일치되지 않고 제2변형부(19)에서는 일치된다. 그러므로, 제1변형부(15)는 수평방향으로 수축되고 수직방향으로 팽창하며, 제2변형부(17)는 수평방향으로 팽창되고 수직방향으로 수축된다. 따라서, 거울면(23)은 제1변형부(15)에서 제2변형부(17) 방향으로 기울어져 경사각을 갖는다. 상기에서 반사면(23)의 경사각은 제1 및 제2변형부들(15)(17)의 상부의 길이에 비례하고, 두께의 제곱에 반비례한다. 그러므로, 반사면(23)의 경사각을 크게하여 광로조절범위를 크게하기 위해서는 제1 및 제2변형부들(15)(17) 상부의 두께를 작게하거나 높이를 크게해야 한다.The optical path control apparatus 10 described above includes the first and second deformation parts 15 and 17 when a voltage, which is an image signal, is applied from an external circuit (not shown) through the driving substrate 11 and the pad 13. Is transformed. That is, for example, when a signal voltage is applied to the signal electrode 19 in a state in which the first deformation unit 15 is polarized in the direction of the second deformation unit 17, the polarization direction and the electric field direction are the first deformation unit 17. ) Does not match, but matches in the second deformation unit 19. Therefore, the first deformable portion 15 is contracted in the horizontal direction and expands in the vertical direction, and the second deformed portion 17 is expanded in the horizontal direction and contracted in the vertical direction. Therefore, the mirror surface 23 is inclined in the direction of the second deformation portion 17 from the first deformation portion 15 to have an inclination angle. The inclination angle of the reflective surface 23 is in proportion to the length of the upper portions of the first and second deformation parts 15 and 17 and inversely proportional to the square of the thickness. Therefore, in order to increase the inclination angle of the reflective surface 23 to increase the optical path control range, the thickness of the upper portions of the first and second deformation parts 15 and 17 must be reduced or increased.
상술한 광로조절장치(10)는 신호전극(19)을 형성하기 위한 금속 도전막과 압전세라믹등이 교호하는 다수의 층으로 적층하며, 한쪽 방향으로 분극하고, 적층방향에 대해 수직으로 절단하여 구동기판(21)에 실장한다. 그 다음, 금속도전막 사이의 압전세라믹 등을 쏘잉(sawing) 등의 기계적 절삭 가공에 의해 제1 및 제2변형부들(15)(17) 상부의 두께 및 높이를 한정하고, 스프터링 등에 의해 제1 및 제2변형부들(15)(17)의 외부표면에 바이어스전극(21)들을 형성하여 M × N 액츄에이터들 만들고, 이 액츄에이터들의 상부표면에 거울면(23)을 부착시킨다.The above-described optical path control device 10 is laminated in a plurality of layers in which a metal conductive film for forming the signal electrode 19, piezoelectric ceramics, and the like are alternated, polarized in one direction, and cut and driven perpendicular to the lamination direction. It is mounted on the board | substrate 21. Next, the thickness and height of the upper portions of the first and second deformed portions 15 and 17 are defined by mechanical cutting such as sawing of the piezoelectric ceramics and the like between the metal conductive films, and made by sputtering or the like. The bias electrodes 21 are formed on the outer surfaces of the first and second deformation parts 15 and 17 to form M x N actuators, and the mirror surface 23 is attached to the upper surfaces of the actuators.
그러나, 상술한 종래의 광로조절장치는 M × N개의 액츄에이터를 만들기 위한 다층 세라믹 사이의 금속도전막이 평탄하지 않아 기계적 절삭에 의한 가공 속도가 제한되어 양산성이 저하되며, 또한, 회소의 크기가 커지는 문제점이 있었다.However, the conventional optical path adjusting device described above has a non-flat metal conductive film between multilayer ceramics for making M x N actuators, thereby limiting the processing speed due to mechanical cutting, thereby lowering mass productivity and increasing the size of the ash. There was a problem.
그러므로, 본 발명의 목적은 반도체공정을 이용하여 양산성을 향상시킬 수 있는 광로조절장치를 제공함에 있다.Therefore, it is an object of the present invention to provide an optical path control apparatus that can improve mass productivity using a semiconductor process.
본 발명의 다른 목적은 화소의 크기를 감소시킬 수 있는 광로조절장치를 제공함에 있다.Another object of the present invention is to provide an optical path adjusting apparatus capable of reducing the size of a pixel.
상기 목적들을 달성하기 위한 본 발명에 따른 광로조절장치는 트랜지스터들가 매트릭스 형태로 내장되고 표면에 각각의 트랜지스터에 전기적으로 연결된 패드를 갖는 구동기판과; 상기 구동기판의 상부에 박막의 저항성금속이 형성되며 일측 끝단이 상기 패드 연결되는 히터와; 상기 구동기판의 상부에 한 쌍의 상기 패드 및 상기 히터 각각의 둘레를 에워싸 각각의 화소를 한정하는 격벽과; 상기 격벽내의 히터 상부에 형성되며 온도 변화에 따른 표면장력 또는 압력(팽창율)의 변화가 크고 반응성이 좋지않은 안정한 액체로 이루어진 변형부와; 상기 격벽의 상부에 상기 변형부와 접촉되어 상기 변형부의 표면장력 또는 압력에 의해 기울기가 조절되는 반사특성이 양호한 물질로 형성된 거울면을 구비한다.An optical path control device according to the present invention for achieving the above objects includes a drive substrate having a pad in which the transistors are embedded in a matrix form and electrically connected to each transistor on a surface thereof; A heater having a thin film of resistive metal formed on the driving substrate and having one end connected to the pad; Barrier ribs surrounding respective pairs of the pads and the heaters to define respective pixels on an upper portion of the driving substrate; A deformable portion formed on the heater in the partition wall and made of a stable liquid having a large change in surface tension or pressure (expansion rate) according to temperature change and poor reactivity; An upper surface of the partition wall is provided with a mirror surface formed of a material having good reflection characteristics in contact with the deformable portion and having an inclination adjusted by surface tension or pressure of the deformable portion.
이하, 첨부한 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제2도는 본 발명의 일 실시예에 따른 광로조절장치(30)의 단면도이다. 상기 광로조절장치(30)는 구동기판(31), 패드(33), 히터(hitter:35), 보호막(36), 격벽(37), 변형부(39) 및 거울면(41)을 구비한다.2 is a cross-sectional view of the optical path control device 30 according to an embodiment of the present invention. The optical path control device 30 includes a driving substrate 31, a pad 33, a heater 35, a protective film 36, a partition wall 37, a deformable part 39, and a mirror surface 41. .
구동기판(31)은 유리 또는 알루미나(Al2O3) 등의 절연물질이나, 또는 실리콘 등의 반도체로 이루어지며 M × N개의 트랜지스터(도시되지 않음)가 매트릭스 형태로 내장된다. 또한, 구동기판(31)의 표면에 트랜지스터와 전기적으로 연결된 패드(33)가 형성되어 있다.The driving substrate 31 is made of an insulating material such as glass or alumina (Al 2 O 3 ), or a semiconductor such as silicon, and M × N transistors (not shown) are embedded in a matrix form. In addition, a pad 33 electrically connected to the transistor is formed on the surface of the driving substrate 31.
히터(35)는 구동기판(31)의 상부에 형성된다. 히터(35)는 크롬(Cr) 또는 텅스텐(W) 등과 같은 저항성금속이 박막으로 형성되며 일측 끝단이 패드(33)와 연결된다. 따라서, 구동기판(31)의 트랜지스터 및 패드(33)를 통해 외부회로(도시되지 않음)로 부터 화상신호가 인가되면 히터(35)가 열을 발생하며, 발생되는 열은 화상신호의 크기에 비례하게 된다. 히터(35)와 패드(33)는 산화실리콘(SiO2) 또는 질화실리콘(Si3N4) 등의 절연물질로 이루어진 보호막(36)으로 덮혀진다.The heater 35 is formed on the driving substrate 31. The heater 35 is formed of a thin film of a resistive metal such as chromium (Cr) or tungsten (W), and one end thereof is connected to the pad 33. Therefore, when an image signal is applied from an external circuit (not shown) through the transistor 33 and the pad 33 of the driving substrate 31, the heater 35 generates heat, and the generated heat is proportional to the magnitude of the image signal. Done. The heater 35 and the pad 33 are covered with a protective film 36 made of an insulating material such as silicon oxide (SiO 2 ) or silicon nitride (Si 3 N 4 ).
격벽(37)은 구동기판(31)의 상부에 한 쌍의 패드(33) 및 히터(35) 각각의 둘레를 에워싸는 것으로 각각의 화소를 한정한다. 상기 격벽(37)은 보호막(36)과 동일한 물질인 산화실리콘 또는 질화실리콘 등으로 1∼4㎛ 정도의 높이를 갖도록 이루어진다.The partition wall 37 defines each pixel by surrounding the pair of pads 33 and the heaters 35 on the driving substrate 31. The barrier rib 37 is made of silicon oxide or silicon nitride, which is the same material as that of the protective film 36, to have a height of about 1 to 4 μm.
변형부(39)는 격벽(37) 내의 히터(35) 상부에 형성된다.The deformable portion 39 is formed above the heater 35 in the partition wall 37.
변형부(39)는 온도 변화에 따른 표면장력의 변화 또는 압력의 변화가 크고 반응성이 좋지않은 안정한 알콜 등의 액체로 이루어진다. 그러므로, 입력되는 화상신호에 비례하여 히터(35)에서 발생되는 열에 의해 변형부(39)는 가열되어 또는 압력이 커지거나 표면장력이 작아져 구동기판(31)상에 넓게 퍼지고, 화상 신호가 입력되지 않으면 변형부(39)가 냉각되어 압력이 작아지거나 표면장력이 커져 원의 상태로 뭉쳐진다.The deformable portion 39 is made of a liquid such as stable alcohol having a large change in surface tension or a change in pressure due to temperature change and poor reactivity. Therefore, the deformable portion 39 is heated by the heat generated by the heater 35 in proportion to the input image signal, or the pressure is increased or the surface tension is reduced so that it spreads widely on the driving substrate 31, and the image signal is inputted. If not, the deformable portion 39 is cooled, so that the pressure is reduced or the surface tension is increased, so that the deformed portion 39 is united in the original state.
거울면(41)은 반사특성이 양호한 물질로 형성되어 입사되는 광을 경로를 변경시켜 반사시키는 것으로, 격벽(37)의 상부에 변형부(39)와 접촉되게 형성된다. 거울면(41)은 외부회로로 부터 입력되는 화상신호에 의해 히터(35)에서 발생되는 열이 변형부(39)에 전달되어 이 변형부(39)의 표면장력 또는 압력을 변화시키는 것에 의해 인장력이 변화된다. 따라서, 거울면(41)은 변형부(39)의 인장력에 비례하여 경사각도를 변화시킨다. 즉, 화상신호가 입력되지 않아 변형부(39)가 냉각 상태에 있으면 표면 장력이 크거나 아력이 작아져 인장력이 커지게 되어 거울면(41)이 경사지지 않고 평탄하며, 화상신호가 입력되어 변형부(39)가 가열상태가 되면 표면 장력이 작아지거나 압력이 커져 인장력이 작아지게 되어 거울면(41)이 경사지게 된다. 상기에서, 거울면(41)의 경사각도는 입력되는 화상신호의 크기에 비례한다.The mirror surface 41 is formed of a material having good reflection characteristics and reflects incident light by changing a path, and is formed to be in contact with the deformable portion 39 on the partition wall 37. The mirror surface 41 is a tensile force by the heat generated from the heater 35 is transferred to the deformable portion 39 by the image signal input from the external circuit to change the surface tension or pressure of the deformable portion 39 Is changed. Therefore, the mirror surface 41 changes the inclination angle in proportion to the tensile force of the deformation portion 39. That is, when the deformable portion 39 is in a cooling state because no image signal is input, the surface tension is large or the force is small, so that the tensile force is increased, so that the mirror surface 41 is flat without being inclined, and the image signal is input and deformed. When the part 39 is heated, the surface tension is reduced or the pressure is increased, so that the tensile force is reduced, so that the mirror surface 41 is inclined. In the above, the inclination angle of the mirror surface 41 is proportional to the magnitude of the input image signal.
상술한 본 발명에 따른 광로조절장치는 구동기판(31)의 보호막(36) 상부에 산화실리콘 또는 질화실리콘 등을 화학기상침적(Chemical Vapor Deposion)법 등에 의해 1∼4㎛ 정도로 침적한 후 통상의 반응성 이온 에칭(Reactive Ion Etching : RIE)방법에 의해 격벽(37)을 한정한다. 상기와 같이 반도체를 제조할 때에 이용되는 화학기상침적법 및 반응성 이온 에칭방법 등의 공정을 사용하여 격벽(37)을 형성할 수 있으므로 양산성이 향상되고 화소의 크기를 감소시킬 수 있다.In the optical path adjusting apparatus according to the present invention, silicon oxide or silicon nitride is deposited on the protective layer 36 of the driving substrate 31 to about 1 to 4 μm by a chemical vapor deposition method, or the like. The partition wall 37 is defined by a reactive ion etching (RIE) method. Since the partition wall 37 can be formed using a process such as a chemical vapor deposition method and a reactive ion etching method used when manufacturing a semiconductor as described above, the productivity can be improved and the size of the pixel can be reduced.
따라서, 본 발명은 격벽을 반도체공정으로 한정할 수 있으므로 공정시간이 짧아져 생산성이 향상되며, 미세패턴으로 형성할 수 있으므로 화소의 크기를 감소시킬 수 있는 잇점이 있다.Therefore, the present invention can limit the partition to the semiconductor process, the process time is shortened, productivity is improved, and can be formed into a fine pattern, there is an advantage that can reduce the size of the pixel.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940015344A KR0178191B1 (en) | 1994-06-30 | 1994-06-30 | Lightpath modulation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940015344A KR0178191B1 (en) | 1994-06-30 | 1994-06-30 | Lightpath modulation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960001844A KR960001844A (en) | 1996-01-25 |
| KR0178191B1 true KR0178191B1 (en) | 1999-05-01 |
Family
ID=19386764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940015344A KR0178191B1 (en) | 1994-06-30 | 1994-06-30 | Lightpath modulation device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0178191B1 (en) |
-
1994
- 1994-06-30 KR KR1019940015344A patent/KR0178191B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR960001844A (en) | 1996-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR970003448B1 (en) | An optical path regulating apparatus and an manufacturing method | |
| KR0178191B1 (en) | Lightpath modulation device | |
| KR100209398B1 (en) | Fabrication method for lightpath modulation device | |
| KR0178190B1 (en) | Lightpath modulation device | |
| KR100255750B1 (en) | Tma and manufacturing method thereof | |
| KR0159401B1 (en) | Method for fabricating optical projection system | |
| KR970003463B1 (en) | Manufacturing method of optical path regulating apparatus | |
| KR970003442B1 (en) | Optical path regulator for projector | |
| KR100207371B1 (en) | Fabrication method for lightpath modulation device | |
| KR0178235B1 (en) | Manufacturing method of optical path regulation apparatus | |
| KR960016280B1 (en) | Optical path regulation means of projection type image display apparatus | |
| KR100207374B1 (en) | Fabrication method for lightpath modulation device used in optical projection system | |
| KR100273899B1 (en) | Apparatus and fabricating method of actuated mirror arrays | |
| KR100209403B1 (en) | Lightpath modulation device | |
| KR970003464B1 (en) | An optical path regulating apparatus | |
| KR0159414B1 (en) | Method for fabricating optical projection system | |
| KR100209962B1 (en) | Thin film lightpath modulation device and its fabrication method | |
| KR0159387B1 (en) | Optical projection system | |
| KR100208673B1 (en) | Thin film lightpath modulation device and its fabrication method with large tilt angle | |
| KR100207412B1 (en) | Planerizing method of actuated mirror array | |
| KR960016278B1 (en) | Optical path regulation apparatus | |
| KR100267467B1 (en) | Fabricating method for actuated mirror arrays | |
| KR100216902B1 (en) | Lightpath modulation device | |
| KR100209399B1 (en) | Fabrication method for lightpath modulation device | |
| KR960016283B1 (en) | Optical path regulation apparatus by using seramic actuator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20011031 Year of fee payment: 4 |
|
| LAPS | Lapse due to unpaid annual fee |