KR0178190B1 - Lightpath modulation device - Google Patents
Lightpath modulation device Download PDFInfo
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- KR0178190B1 KR0178190B1 KR1019940015343A KR19940015343A KR0178190B1 KR 0178190 B1 KR0178190 B1 KR 0178190B1 KR 1019940015343 A KR1019940015343 A KR 1019940015343A KR 19940015343 A KR19940015343 A KR 19940015343A KR 0178190 B1 KR0178190 B1 KR 0178190B1
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- driving substrate
- optical path
- path control
- control device
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- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 230000005291 magnetic effect Effects 0.000 claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims abstract description 8
- 239000011159 matrix material Substances 0.000 claims abstract description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- 229910000976 Electrical steel Inorganic materials 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910000889 permalloy Inorganic materials 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 18
- 239000010409 thin film Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002902 ferrimagnetic material Substances 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/02—Function characteristic reflective
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Abstract
본 발명은 광로조절장치에 관한 것으로서, 트랜지스터들이 매트릭스 형태로 내장되고 표면에 이 트랜지스터들과 전기적으로 연결된 패드를 갖는 구동기판과, 상기 구동기판 상부에 2개의 코일이 쌍으로 이루어져 동일간격으로 이격되어 자장을 발생하는 다수개의 코일부와, 상기 구동기판 상부에 하부가 접촉되고 상부가 평탄한 'ㄱ'자 형태로 형성된 변형부와, 상기 구동기판 위에 삼각막대 형태로 되어 상기 코일부에서 발생된 자장에 의해 상기 구동기판과 변형부사이에서 수평운동을 하는 지지대와, 상기 변형부 상부에 형성된 반사막을 구비한다. 따라서, 본 발명은 다층 세라믹을 사용하지 않고 후막 또는 박막을 적층한후 기계적 절삭 또는 물리적 식각을 하므로 구조가 간단하고 제조방법이 용이하다. 또한, 박막들을 형성하고 물리적 식각하므로 액츄에이터 크기를 최소화하여 고밀도의 화소를 이룰 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical path control apparatus, comprising: a driving substrate having a pad embedded in a matrix and electrically connected to the transistors on a surface thereof, and two coils arranged on top of the driving substrate to be spaced at equal intervals; A plurality of coils for generating a magnetic field, a deformable portion formed in the form of a letter 'b' shape of the lower portion in contact with the upper portion of the drive substrate, the upper portion, and a magnetic field generated by the coil portion in the form of a triangular rod on the drive substrate And a support for horizontal movement between the driving substrate and the deformable portion, and a reflective film formed on the deformable portion. Therefore, the present invention is simple in structure and easy to manufacture because mechanical cutting or physical etching is performed after stacking a thick film or a thin film without using a multilayer ceramic. In addition, since the thin films are formed and physically etched, the actuator size can be minimized to achieve high density of pixels.
Description
제1도는 종래 광로조절장치의 단면도.1 is a cross-sectional view of a conventional optical path control device.
제2도는 본 발명에 따른 광로조절장치의 단면도.2 is a cross-sectional view of the optical path control apparatus according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
30 : 광로조절장치 31 : 구동기판30: optical path control device 31: driving substrate
32 : 패드 33a,33b,33c : 제1,제2, 및 제3코일32: pads 33a, 33b, 33c: first, second, and third coils
35 : 보호막 37 : 지지대35: protective film 37: support
39 : 변형부 41 : 반사막39: deformation portion 41: reflecting film
본 발명의 광로조절장치에 관한 것으로서, 특히, 생산성 증가와 고밀도 집적을 이룰 수 있는 광로조절장치에 관한 것이다.The present invention relates to an optical path control device, and more particularly, to an optical path control device capable of increasing productivity and high density integration.
화상표시장치는 표시방법에 따라 직시형 표시장치와 투사형 표시장치로 구분된다. 직시형 화상표시장치는 CRT(Cathode Ray Tube)등이 있는데, 이러한 CRT 화상표시장치는 화질은 좋으나 화면이 커짐에 따라 중량 및 두께의 증대와, 가격이 비싸지는 등의 문제점이 있어 대화면을 구비하는데 한계가 있다.The image display device is classified into a direct view display device and a projection display device according to a display method. The direct view type image display device includes a CRT (Cathode Ray Tube), but the CRT image display device has good image quality but has a problem such as an increase in weight and thickness as the screen is enlarged, and a price is expensive. There is.
투사형 화상표시장치는 대화면 액정표시장치(Liquid Crystal Display: 이하 LCD라 칭함)등이 있는데, 이러한 대화면 LCD의 박형화가 가능하여 중량을 작게 할 수 있다. 그러나, 이러한 LCD는 편광판에 의한 광손실이 크고 LCD를 구동하기 위한 박막트랜지스터가 화소마다 형성되어 있어 개구율(광의 투과면적)을 높이는데 한계가 있으므로 광의 효율이 매우 낮다.Projection type image display apparatuses include a large crystal display (hereinafter referred to as an LCD), and such a large-screen LCD can be thinned to reduce the weight. However, the LCD has a high light loss due to the polarizing plate, and a thin film transistor for driving the LCD is formed for each pixel, so that there is a limit in increasing the aperture ratio (light transmission area).
따라서, PDP(Plasma Display Panel), EL(Electro Luminescence) 소자 및 AMA(Actuated Mirror Array)등과 같은 투사형 화상표시장치가 연구개발되고 있다.Therefore, a projection type image display device such as a plasma display panel (PDP), an electroluminescence (EL) device, an active mirror array (AMA), and the like, has been researched and developed.
제1도는 종래의 AMA를 이용한 투사형 화상표시장치의 광로조절장치(10)의 단면도이다.1 is a cross-sectional view of an optical path control apparatus 10 of a projection image display apparatus using a conventional AMA.
상기 광로조절장치(10)는 구동기판(11), 액츄에이터(14) 및 거울면(23)을 포함한다.The optical path control apparatus 10 includes a driving substrate 11, an actuator 14, and a mirror surface 23.
상기에서 구동기판(11)은 유리 또는 알루미나(Al2O3)등의 절연물질로 이루어지며 화소들마다 트랜지스터들(도시되지 않음)을 가지고 표면에 매트릭스(matrix) 형태의 패드(13)가 형성되어 있다. 또한, 구동기판(11)은 단결정 실리콘 웨이퍼로 형성될 수도 있다.The driving substrate 11 is made of an insulating material such as glass or alumina (Al 2 O 3 ), and has a transistor (not shown) for each pixel, and a pad 13 having a matrix form is formed on a surface thereof. It is. In addition, the driving substrate 11 may be formed of a single crystal silicon wafer.
액츄에이터(14)는 상기 제1 및 제2변형부들(15)(17)과 신호 및 바이어스전극들(19)(21)로 이루어진다. 상기에서 제1 및 제2변형부들(15)(17)은 L자 모양을 가지며 거울상으로 배치되어 철(凸)모양으로 구동기판(11)상에 실장되어 있다. 상기 제1 및 제2변형부들(15)(17)은 압전세라믹으로 이루어져 있으며, 상부에 거울면(23)이 위치되어 있다. 제1 및 제2변형부들(15)(17)은 사이에 신호전극(19)이 이 신호전극(19)과 마주보는 표면에 바이어스전극(19)들이 형성되어 있다. 상기에서 제1 및 제2변형부들(15)(17)은 신호전극(19)과 수직을 이루는 한 방향으로 분극(polarization)되어 있다. 신호전극(19)은 패드(13)와 전기적으로 접속되어 있으며, 바이어스전극(21)은 외부도선 패턴(도시되지 않음)에 의해 인접하는 광로조절장치의 바이어스전극들과 접속되어 있다.The actuator 14 is composed of the first and second deformation parts 15 and 17 and the signal and bias electrodes 19 and 21. The first and second deformation parts 15 and 17 have an L shape and are disposed in a mirror shape and mounted on the driving substrate 11 in an iron shape. The first and second deformable parts 15 and 17 are made of piezoelectric ceramics, and a mirror surface 23 is positioned at an upper portion thereof. The bias electrodes 19 are formed on the surface of the first and second deformation parts 15 and 17 where the signal electrode 19 faces the signal electrode 19. The first and second deformation parts 15 and 17 are polarized in one direction perpendicular to the signal electrode 19. The signal electrode 19 is electrically connected to the pad 13, and the bias electrode 21 is connected to the bias electrodes of the adjacent optical path control apparatus by an external conductor pattern (not shown).
또한, 신호 및 바이어스전극들(19)(21)은 금속 등의 도전성 물질로 형성되어 화상신호 전압을 인가하면 제1 및 제2변형부들(15)(17)을 변형시킨다. 즉, 예를들면, 제1변형부(15)에서 제2변형부(17) 방향으로 분극된 상태에서 신호전극(19)에 화상신호가 인가되면 분극방향과 전계방향은 제1변형부(17)에서는 일치되지 않고 제2변형부(19)에서는 일치된다. 그러므로, 제1변형부(15)는 수평방향으로 수축하고 수직방향으로 팽창하며, 제2변형부(17)는 수평방향으로 팽창하고 수직방향으로 수축한다. 따라서, 반사막(23)은 제1변형부(15)에서 제2변형부(17) 방향으로 기울어져 경사각을 갖는다. 상기에서 거울면(23)의 경사각은 제1 및 제2변형부들(15)(17)의 상부의 길이에 비례하고, 두께의 제곱에 반비례한다. 그러므로, 거울면(23)의 경사각을 크게하여 광로조절범위를 크게하기 위해서는 제1 및 제2변형부들(15)(17) 상부의 두께를 작게하거나 높이를 크게해야 한다.In addition, the signal and bias electrodes 19 and 21 are formed of a conductive material such as a metal to deform the first and second deformation parts 15 and 17 when an image signal voltage is applied. That is, for example, when an image signal is applied to the signal electrode 19 while being polarized in the direction of the second deformation unit 17 from the first deformation unit 15, the polarization direction and the electric field direction are the first deformation unit 17. ) Does not match, but matches in the second deformation unit 19. Therefore, the first deformable portion 15 contracts in the horizontal direction and expands in the vertical direction, and the second deformed portion 17 expands in the horizontal direction and contracts in the vertical direction. Therefore, the reflective film 23 is inclined from the first deformed portion 15 toward the second deformed portion 17 to have an inclination angle. In this case, the inclination angle of the mirror surface 23 is proportional to the length of the upper portions of the first and second deformations 15 and 17 and inversely proportional to the square of the thickness. Therefore, in order to increase the optical path control range by increasing the inclination angle of the mirror surface 23, the thickness of the upper part of the first and second deformation parts 15 and 17 should be reduced or increased.
상술한 광로조절장치(10)는 신호전극을 형성하기 위한 금속 도전막과 압전세라믹등이 교호하는 다수의 층으로 적층하며, 한쪽 방향으로 분극하고, 적층방향에 대해 수직으로 절단하여 기판(11)에 실장한다. 그 다음, 금속도전막 사이의 압전세라믹 등을 쏘잉(sawing) 등의 기계적 절삭 가공에 의해 제1 및 제2변형부들(15)(17) 상부의 두께 및 높이를 한정하고, 스프터링 등에 의해 제1 및 제2변형부들(15)(17)의 외부표면에 바이어스전극(21)들을 형성하여 M × N개의 액츄에이터(14)를 만들고, 이 액츄에이터(14)의 상부표면에 거울면(23)을 부착시킨다.The above-described optical path control device 10 is laminated on a plurality of layers in which a metal conductive film for forming a signal electrode, piezoelectric ceramics, and the like are alternated, polarized in one direction, and cut perpendicularly to the stacking direction to form a substrate 11. Mount on Next, the thickness and height of the upper portions of the first and second deformed portions 15 and 17 are defined by mechanical cutting such as sawing of the piezoelectric ceramics and the like between the metal conductive films, and made by sputtering or the like. The bias electrodes 21 are formed on the outer surfaces of the first and second deformation parts 15 and 17 to form M × N actuators 14, and the mirror surface 23 is formed on the upper surface of the actuators 14. Attach.
그러나, 상술한 종래의 광로조절장치는 M × N개의 액츄에이터를 만들기 위한 다층 세라믹 사이의 금속도전막이 평탄하지 않아 기계적 절삭가공 속도가 제한되어 양산성이 저하되고 복잡한 가공공정에 따른 생산성이 저하될 뿐만아니라 액츄에이터를 작게하는데 한계가 있어 집적도가 낮아지는 문제점들이 있었다.However, the above-described conventional optical path control device is not flat metal conductive film between the multi-layer ceramic for making M × N actuators is limited mechanical cutting speed, the productivity is lowered and productivity due to complex processing process is not only reduced However, there is a problem in that the degree of integration is lowered because there is a limit to the small actuator.
따라서, 본 발명의 목적은 박막 제조방법을 사용하여 화소들의 크기가 작고 고밀도를 이룰 수 있고 생산성을 향상시킬 수 있는 광로조절장치을 제공함에 있다.Accordingly, an object of the present invention is to provide an optical path control apparatus that can achieve small size, high density, and improve productivity using a thin film manufacturing method.
본 발명의 다른 목적은 자성 액츄에이터를 이용한 광로조절수단을 제공함에 있다.Another object of the present invention to provide an optical path control means using a magnetic actuator.
상기 목적들을 달성하기 위한 본 발명에 따른 광로조절장치는 트랜지스터들이 매트릭스 형태로 내장되고 표면에 이 트랜지스터들과 전기적으로 연결된 패드를 갖는 구동기판과, 상기 구동기판 상부에 2개의 코일이 쌍으로 이루어져 동일간격으로 이격되어 자장을 발생하는 다수개의 코일부와, 상기 구동기판 상부에 하부가 접촉되고 상부가 평탄한 'ㄱ'자 형태로 형성된 변형부와, 상기 구동기판 위에 삼각막대 형태로 되어 상기 코일부에서 발생된 자장에 의해 상기 구동기판과 변형부사이에서 수평운동을 하는 지지대와, 상기 변형부 상부에 형성된 반사막을 구비한다.The optical path control device according to the present invention for achieving the above object is a drive substrate having a pad in which the transistors are embedded in a matrix form and electrically connected to the transistors on the surface thereof, and a pair of two coils on the top of the drive substrate. A plurality of coil parts spaced apart at intervals to generate a magnetic field, a deformation part formed in a 'B' shape having a lower contact with the upper part of the driving substrate and a flat upper part, and a triangular rod shape on the driving substrate, And a support for horizontal movement between the driving substrate and the deformable portion by the generated magnetic field, and a reflective film formed on the deformable portion.
이하, 첨부한 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제2도는 본 발명의 바람직한 실시예에 따른 광로조절장치(30)의 단면도이다.2 is a cross-sectional view of the optical path control device 30 according to a preferred embodiment of the present invention.
광로조절장치(30)는 구동기판(31), 패드(pad: 32), 다수개의 코일부(33a)(33b)(33c), 지지대(37), 변형부(39) 및 반사막(41)을 구비한다.The optical path controller 30 includes a driving substrate 31, a pad 32, a plurality of coil parts 33a, 33b, 33c, a support 37, a deformable part 39, and a reflective film 41. Equipped.
구동기판(31)은 유리 또는 알루미나(Al2O3) 등의 절연물질이나 실리콘 등의 반도체로 이루어지며 M × N개의 트랜지스터(도시되지 않음)가 매트릭스(matrix) 형태로 내장되어 있으며, 패드(32)는 전도성이 좋은 알루미늄(Al) 등의 금속으로 형성되며 구동기판(31)에 내장된 트랜지스터와 전기적으로 연결된다. 그리고, 패드(32)를 통해 입력되는 화상신호는 크기에 따라 스위치 소자(도시되지 않음)에 의해 스위칭 되어 제1, 제2 및 제3 코일부(33a)(33b)(33c)에 선택적으로 전압이 인가된다. 상기 제1, 제2 및 제3코일부(33a)(33b)(33c)는 각각 소정거리 이격된 2개의 쌍으로 이루어져 동일한 간격으로 이격된다. 또한, 구동기판(31)의 표면에 패드(32)와 제1, 제2 및 제3 코일부(33a)(33b)(33c)를 덮어 공기 중에 노출되지 않도록 하여 보호하는 산화실리콘(SiO2) 또는 질화실리콘(Si3N4) 등의 절연물질로 이루어진 보호막(35)이 형성된다. 보호막(35)은 상기 지지대(37)가 용이하게 동작할 수 있도록 평탄해야 한다.The driving substrate 31 is made of an insulating material such as glass or alumina (Al 2 O 3 ) or a semiconductor such as silicon, and M × N transistors (not shown) are embedded in a matrix form, and a pad ( 32 is formed of a metal such as aluminum (Al) having high conductivity, and is electrically connected to a transistor embedded in the driving substrate 31. Then, the image signal input through the pad 32 is switched by a switch element (not shown) according to the size to selectively voltage the first, second, and third coil parts 33a, 33b, 33c. Is applied. The first, second, and third coil parts 33a, 33b, 33c are each composed of two pairs spaced apart by a predetermined distance and spaced apart at equal intervals. In addition, the silicon oxide (SiO 2 ) is protected by covering the pad 32 and the first, second, and third coil parts 33a, 33b, 33c on the surface of the driving substrate 31 to prevent exposure to air. Alternatively, a protective film 35 made of an insulating material such as silicon nitride (Si 3 N 4 ) is formed. The protective film 35 should be flat so that the support 37 can be easily operated.
변형부(39)는 하부가 구동기판(31)의 상부 소정부분에 접촉되고 상부가 평탄한 'ㄱ'자 형태로 형성된다. 상기 변형부(39)는 상기 제1, 제2 및 제3 코일부(33a)(33b)(33c)의 자장에 민감하지 않은 물질인 세라믹(ceramic)이나 폴리이미드(polyimide)로 되어 있다. 또한, 상기 변형부(39)는 상부가 구동기판(31)의 수직방향으로 초기 응력이 작용하여 하부방향으로 기울어지는 경향을 갖도록 형성된다. 상기에서, 변형부(39)는 구동기판(31) 상부의 소정부분을 제외한 부분에 형성된 희생막(도시되지 않음)의 상부에 하부가 상기 구동기판(31)의 소정부분과 접촉되며 상부 표면이 반도체 공정의 박막 형성방법으로 형성된다.The deformable portion 39 is formed in a '-' shape in which the lower portion contacts the upper predetermined portion of the driving substrate 31 and the upper portion is flat. The deformable portion 39 is made of ceramic or polyimide, which is a material that is not sensitive to the magnetic fields of the first, second, and third coil portions 33a, 33b, 33c. In addition, the deformation part 39 is formed such that the upper part has a tendency to incline in the lower direction by the initial stress acting in the vertical direction of the driving substrate 31. In the above description, the deformable portion 39 has a lower portion in contact with a predetermined portion of the driving substrate 31 at an upper portion of a sacrificial film (not shown) formed at a portion other than a predetermined portion of the upper portion of the driving substrate 31. It is formed by the thin film formation method of a semiconductor process.
지지대(37)는 철(Fe), 규소강(Fe-Si), 퍼말로이(Pearlite)와 같은 강자성체와 페라이트(Ferrite) 또는 같은 페리 자성체로 삼각막대의 형태로 형성된다. 지지대(37)는 패드(32)를 통해 입력되는 화상신호, 즉 전압이 스위치 소자에 의해 제1, 제2 및 제3 코일부(33a)(33b)(33c) 중 임의의 코일부가 선택되어 자장이 발생되면 이 자장의 자력에 의해 상기 지지대(37)가 수평방향으로 이동되어 변형부(39)가 초기응력에 의해 기울어지는 정도를 조절한다. 예를들면, 초기 상태일 때 상기 지지대(39)가 코일부(33a)에 위치하여 변형부(39)의 상부가 구동기판(31)과 수평이 되게 놓여 있다면, 화상신호가 제2코일부(33b) 또는 제3코일부(33c)중 어느 하나에 인가되도록 공급되면, 제2코일부(33b) 또는 제3코일부(33c)중 어느 하나에 발생되는 자장에 의해 지지대(37)는 수평방향으로 이동하여 변형부(39) 상부의 기울기를 조절할 수 있다.The support 37 is formed of a ferromagnetic material such as iron (Fe), silicon steel (Fe-Si), and permalloy, and ferrite or ferri magnetic material such as ferrite or ferrite. The support 37 is an image signal input through the pad 32, that is, a voltage is selected by any switch among the first, second, and third coil parts 33a, 33b, 33c by the switch element. When this occurs, the support 37 is moved in the horizontal direction by the magnetic force of the magnetic field to adjust the degree of inclination of the deformable portion 39 by the initial stress. For example, in the initial state, if the support 39 is positioned at the coil part 33a so that the upper part of the deformable part 39 is flush with the driving substrate 31, the image signal is transmitted to the second coil part ( When supplied to be applied to either 33b) or the third coil part 33c, the support base 37 is moved in the horizontal direction by a magnetic field generated in either the second coil part 33b or the third coil part 33c. By moving to the inclination of the upper portion of the deformable portion 39 can be adjusted.
반사막(41)은 상기 변형부(39) 상부에 반사특성이 양호한 금속이 박막 형성 방법으로 형성된다. 그로인해, 상기 지지대(37)의 운동에 따라 입사되는 광의 경로를 바꾸어 반사시킨다. 상기에서, 반사막(41)은 변형부(39)와 동시에 식각할 수 있다. 그리고, 희생막(도시되지 않음)은 습식식각 방법으로 제거된다.The reflective film 41 is formed on the deformable portion 39 by the method of forming a thin film of a metal having good reflection characteristics. As a result, the path of the incident light is changed and reflected according to the movement of the support 37. In the above description, the reflective film 41 may be simultaneously etched with the deformable portion 39. The sacrificial film (not shown) is removed by a wet etching method.
상술한 바와 같이, 본 발명은 구동기판의 상부에 다수개의 코일부를 형성하고 인가되는 화상신호의 크기에 따라 코일부들 중 임의의 어느 하나에 자장이 발생되도록 하여 자성체로 이루어진 지지부를 수평방향으로 이동시켜 초기 응력을 갖는 변형부의 상부가 기울어지는 것을 조절하므로 반사막에 의해 입사되는 광의 경로를 바꾸어 반사시킬 수 있다.As described above, the present invention forms a plurality of coil parts on the upper part of the driving substrate and generates a magnetic field in any one of the coil parts according to the magnitude of the applied image signal so that the support part made of magnetic material is horizontally formed. Since the upper part of the deformable part having the initial stress is tilted by shifting, the path of the light incident by the reflective film may be changed and reflected.
따라서, 본 발명은 다층 세라믹을 사용하지 않고 후막 또는 박막을 적층한후 기계적 절삭 또는 물리적 식각을 하므로 구조가 간단하고 제조방법이 용이한 잇점이 있다. 또한, 박막들을 형성하고 물리적 식각하므로 액츄에이터 크기를 최소화하여 고밀도의 화소를 이룰 수 있는 잇점이 있다.Therefore, the present invention has the advantage that the structure is simple and the manufacturing method is easy since mechanical cutting or physical etching is performed after laminating a thick film or a thin film without using a multilayer ceramic. In addition, since the thin films are formed and physically etched, the actuator size can be minimized to achieve high density pixels.
Claims (8)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019940015343A KR0178190B1 (en) | 1994-06-30 | 1994-06-30 | Lightpath modulation device |
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| KR0178190B1 true KR0178190B1 (en) | 1999-05-01 |
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