KR0174871B1 - 랫칭형 열구동 마이크로 릴레이 소자 - Google Patents
랫칭형 열구동 마이크로 릴레이 소자 Download PDFInfo
- Publication number
- KR0174871B1 KR0174871B1 KR1019950049249A KR19950049249A KR0174871B1 KR 0174871 B1 KR0174871 B1 KR 0174871B1 KR 1019950049249 A KR1019950049249 A KR 1019950049249A KR 19950049249 A KR19950049249 A KR 19950049249A KR 0174871 B1 KR0174871 B1 KR 0174871B1
- Authority
- KR
- South Korea
- Prior art keywords
- channel
- latching
- reservoir
- thermally driven
- relay device
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 238000003860 storage Methods 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910008599 TiW Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052753 mercury Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000007514 turning Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 101100355509 Arabidopsis thaliana RPL18AA gene Proteins 0.000 description 1
- -1 TiW Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H29/00—Switches having at least one liquid contact
- H01H2029/008—Switches having at least one liquid contact using micromechanics, e.g. micromechanical liquid contact switches or [LIMMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H61/00—Electrothermal relays
- H01H2061/006—Micromechanical thermal relay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H29/00—Switches having at least one liquid contact
- H01H29/28—Switches having at least one liquid contact with level of surface of contact liquid displaced by fluid pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H61/00—Electrothermal relays
- H01H61/02—Electrothermal relays wherein the thermally-sensitive member is heated indirectly, e.g. resistively, inductively
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
- Temperature-Responsive Valves (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950049249A KR0174871B1 (ko) | 1995-12-13 | 1995-12-13 | 랫칭형 열구동 마이크로 릴레이 소자 |
JP8163401A JP3050526B2 (ja) | 1995-12-13 | 1996-06-24 | ラッチ(latching)型熱駆動マイクロリレー素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950049249A KR0174871B1 (ko) | 1995-12-13 | 1995-12-13 | 랫칭형 열구동 마이크로 릴레이 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970054597A KR970054597A (ko) | 1997-07-31 |
KR0174871B1 true KR0174871B1 (ko) | 1999-02-01 |
Family
ID=19439595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950049249A KR0174871B1 (ko) | 1995-12-13 | 1995-12-13 | 랫칭형 열구동 마이크로 릴레이 소자 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP3050526B2 (ja) |
KR (1) | KR0174871B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100780838B1 (ko) * | 2006-08-16 | 2007-11-30 | 광주과학기술원 | 열 스위치 |
Families Citing this family (81)
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---|---|---|---|---|
JP4183817B2 (ja) * | 1998-12-30 | 2008-11-19 | アジレント・テクノロジーズ・インク | 電気接点開閉装置 |
US6323447B1 (en) | 1998-12-30 | 2001-11-27 | Agilent Technologies, Inc. | Electrical contact breaker switch, integrated electrical contact breaker switch, and electrical contact switching method |
WO2000041198A1 (en) * | 1998-12-30 | 2000-07-13 | Agilent Technologies, Inc. | Electrical contact breaker switch, integrated electrical contact breaker switch, and electrical contact switching method |
JP4582834B2 (ja) | 1999-06-18 | 2010-11-17 | アバゴ・テクノロジーズ・ジェネラル・アイピー(シンガポール)プライベート・リミテッド | 光導電リレー、組立体および光導電リレーの組立方法 |
US6407401B1 (en) | 2000-06-16 | 2002-06-18 | Agilent Technologies, Inc. | Photoconductive relay and method of making same |
JP2001185017A (ja) | 1999-12-22 | 2001-07-06 | Agilent Technol Inc | スイッチ装置 |
JP2001185014A (ja) * | 1999-12-22 | 2001-07-06 | Agilent Technol Inc | スイッチ装置及びその製造方法 |
US6689976B1 (en) * | 2002-10-08 | 2004-02-10 | Agilent Technologies, Inc. | Electrically isolated liquid metal micro-switches for integrally shielded microcircuits |
JP2002260499A (ja) * | 2001-02-23 | 2002-09-13 | Agilent Technol Inc | 導電性流体を利用したスイッチ装置 |
JP2002260498A (ja) * | 2001-02-28 | 2002-09-13 | Agilent Technol Inc | スイッチ装置 |
US6756552B2 (en) * | 2001-02-23 | 2004-06-29 | Agilent Technologies, Inc. | Multi-pole conductive liquid-based switch device |
US7078849B2 (en) | 2001-10-31 | 2006-07-18 | Agilent Technologies, Inc. | Longitudinal piezoelectric optical latching relay |
US6741767B2 (en) | 2002-03-28 | 2004-05-25 | Agilent Technologies, Inc. | Piezoelectric optical relay |
US6750594B2 (en) | 2002-05-02 | 2004-06-15 | Agilent Technologies, Inc. | Piezoelectrically actuated liquid metal switch |
US6927529B2 (en) | 2002-05-02 | 2005-08-09 | Agilent Technologies, Inc. | Solid slug longitudinal piezoelectric latching relay |
US6756551B2 (en) | 2002-05-09 | 2004-06-29 | Agilent Technologies, Inc. | Piezoelectrically actuated liquid metal switch |
JP2004079288A (ja) | 2002-08-13 | 2004-03-11 | Agilent Technol Inc | 液体金属を用いた電気接点開閉装置 |
US6787719B2 (en) | 2002-12-12 | 2004-09-07 | Agilent Technologies, Inc. | Switch and method for producing the same |
US6774324B2 (en) | 2002-12-12 | 2004-08-10 | Agilent Technologies, Inc. | Switch and production thereof |
US6855898B2 (en) | 2002-12-12 | 2005-02-15 | Agilent Technologies, Inc. | Ceramic channel plate for a switch |
US7022926B2 (en) | 2002-12-12 | 2006-04-04 | Agilent Technologies, Inc. | Ultrasonically milled channel plate for a switch |
US6743990B1 (en) | 2002-12-12 | 2004-06-01 | Agilent Technologies, Inc. | Volume adjustment apparatus and method for use |
US7019235B2 (en) | 2003-01-13 | 2006-03-28 | Agilent Technologies, Inc. | Photoimaged channel plate for a switch |
JP2004227858A (ja) | 2003-01-21 | 2004-08-12 | Agilent Technol Inc | 電気接点開閉装置及び電気接点開閉装置の製造方法 |
US6747222B1 (en) | 2003-02-04 | 2004-06-08 | Agilent Technologies, Inc. | Feature formation in a nonphotoimagable material and switch incorporating same |
US6825429B2 (en) | 2003-03-31 | 2004-11-30 | Agilent Technologies, Inc. | Hermetic seal and controlled impedance RF connections for a liquid metal micro switch |
US6740829B1 (en) | 2003-04-14 | 2004-05-25 | Agilent Technologies, Inc. | Insertion-type liquid metal latching relay |
US6768068B1 (en) | 2003-04-14 | 2004-07-27 | Agilent Technologies, Inc. | Method and structure for a slug pusher-mode piezoelectrically actuated liquid metal switch |
US6920259B2 (en) | 2003-04-14 | 2005-07-19 | Agilent Technologies, Inc. | Longitudinal electromagnetic latching optical relay |
US6888977B2 (en) | 2003-04-14 | 2005-05-03 | Agilent Technologies, Inc. | Polymeric liquid metal optical switch |
US6903492B2 (en) | 2003-04-14 | 2005-06-07 | Agilent Technologies, Inc. | Wetting finger latching piezoelectric relay |
US6876132B2 (en) | 2003-04-14 | 2005-04-05 | Agilent Technologies, Inc. | Method and structure for a solid slug caterpillar piezoelectric relay |
US6816641B2 (en) | 2003-04-14 | 2004-11-09 | Agilent Technologies, Inc. | Method and structure for a solid slug caterpillar piezoelectric optical relay |
US6743991B1 (en) | 2003-04-14 | 2004-06-01 | Agilent Technologies, Inc. | Polymeric liquid metal switch |
US6956990B2 (en) | 2003-04-14 | 2005-10-18 | Agilent Technologies, Inc. | Reflecting wedge optical wavelength multiplexer/demultiplexer |
US6906271B2 (en) | 2003-04-14 | 2005-06-14 | Agilent Technologies, Inc. | Fluid-based switch |
US6876130B2 (en) | 2003-04-14 | 2005-04-05 | Agilent Technologies, Inc. | Damped longitudinal mode latching relay |
US6876133B2 (en) | 2003-04-14 | 2005-04-05 | Agilent Technologies, Inc. | Latching relay with switch bar |
US6774325B1 (en) | 2003-04-14 | 2004-08-10 | Agilent Technologies, Inc. | Reducing oxides on a switching fluid in a fluid-based switch |
US6798937B1 (en) | 2003-04-14 | 2004-09-28 | Agilent Technologies, Inc. | Pressure actuated solid slug optical latching relay |
US6818844B2 (en) | 2003-04-14 | 2004-11-16 | Agilent Technologies, Inc. | Method and structure for a slug assisted pusher-mode piezoelectrically actuated liquid metal optical switch |
US6885133B2 (en) | 2003-04-14 | 2005-04-26 | Agilent Technologies, Inc. | High frequency bending-mode latching relay |
US6903493B2 (en) | 2003-04-14 | 2005-06-07 | Agilent Technologies, Inc. | Inserting-finger liquid metal relay |
US6882088B2 (en) | 2003-04-14 | 2005-04-19 | Agilent Technologies, Inc. | Bending-mode latching relay |
US6831532B2 (en) | 2003-04-14 | 2004-12-14 | Agilent Technologies, Inc. | Push-mode latching relay |
US6876131B2 (en) | 2003-04-14 | 2005-04-05 | Agilent Technologies, Inc. | High-frequency, liquid metal, latching relay with face contact |
US6946775B2 (en) | 2003-04-14 | 2005-09-20 | Agilent Technologies, Inc. | Method and structure for a slug assisted longitudinal piezoelectrically actuated liquid metal optical switch |
US6903287B2 (en) | 2003-04-14 | 2005-06-07 | Agilent Technologies, Inc. | Liquid metal optical relay |
US6803842B1 (en) | 2003-04-14 | 2004-10-12 | Agilent Technologies, Inc. | Longitudinal mode solid slug optical latching relay |
US7012354B2 (en) | 2003-04-14 | 2006-03-14 | Agilent Technologies, Inc. | Method and structure for a pusher-mode piezoelectrically actuated liquid metal switch |
US6879088B2 (en) | 2003-04-14 | 2005-04-12 | Agilent Technologies, Inc. | Insertion-type liquid metal latching relay array |
US6900578B2 (en) | 2003-04-14 | 2005-05-31 | Agilent Technologies, Inc. | High frequency latching relay with bending switch bar |
US6794591B1 (en) | 2003-04-14 | 2004-09-21 | Agilent Technologies, Inc. | Fluid-based switches |
US6870111B2 (en) | 2003-04-14 | 2005-03-22 | Agilent Technologies, Inc. | Bending mode liquid metal switch |
US6894424B2 (en) | 2003-04-14 | 2005-05-17 | Agilent Technologies, Inc. | High frequency push-mode latching relay |
US7071432B2 (en) | 2003-04-14 | 2006-07-04 | Agilent Technologies, Inc. | Reduction of oxides in a fluid-based switch |
US6841746B2 (en) | 2003-04-14 | 2005-01-11 | Agilent Technologies, Inc. | Bent switching fluid cavity |
US6762378B1 (en) | 2003-04-14 | 2004-07-13 | Agilent Technologies, Inc. | Liquid metal, latching relay with face contact |
US6879089B2 (en) | 2003-04-14 | 2005-04-12 | Agilent Technologies, Inc. | Damped longitudinal mode optical latching relay |
US6891116B2 (en) | 2003-04-14 | 2005-05-10 | Agilent Technologies, Inc. | Substrate with liquid electrode |
US6961487B2 (en) | 2003-04-14 | 2005-11-01 | Agilent Technologies, Inc. | Method and structure for a pusher-mode piezoelectrically actuated liquid metal optical switch |
US7070908B2 (en) | 2003-04-14 | 2006-07-04 | Agilent Technologies, Inc. | Feature formation in thick-film inks |
US7048519B2 (en) | 2003-04-14 | 2006-05-23 | Agilent Technologies, Inc. | Closed-loop piezoelectric pump |
US6765161B1 (en) | 2003-04-14 | 2004-07-20 | Agilent Technologies, Inc. | Method and structure for a slug caterpillar piezoelectric latching reflective optical relay |
US6838959B2 (en) | 2003-04-14 | 2005-01-04 | Agilent Technologies, Inc. | Longitudinal electromagnetic latching relay |
US6925223B2 (en) | 2003-04-14 | 2005-08-02 | Agilent Technologies, Inc. | Pressure actuated optical latching relay |
US6946776B2 (en) | 2003-04-14 | 2005-09-20 | Agilent Technologies, Inc. | Method and apparatus for maintaining a liquid metal switch in a ready-to-switch condition |
US6730866B1 (en) | 2003-04-14 | 2004-05-04 | Agilent Technologies, Inc. | High-frequency, liquid metal, latching relay array |
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US6777630B1 (en) | 2003-04-30 | 2004-08-17 | Agilent Technologies, Inc. | Liquid metal micro switches using as channels and heater cavities matching patterned thick film dielectric layers on opposing thin ceramic plates |
US6759610B1 (en) | 2003-06-05 | 2004-07-06 | Agilent Technologies, Inc. | Multi-layer assembly of stacked LIMMS devices with liquid metal vias |
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US6781074B1 (en) | 2003-07-30 | 2004-08-24 | Agilent Technologies, Inc. | Preventing corrosion degradation in a fluid-based switch |
US6787720B1 (en) | 2003-07-31 | 2004-09-07 | Agilent Technologies, Inc. | Gettering agent and method to prevent corrosion in a fluid switch |
KR101051732B1 (ko) | 2009-11-12 | 2011-07-25 | 한국전자통신연구원 | 미세 액체 금속 액적의 형상 변화를 이용한 rf mems 스위치 |
CN102804242B (zh) * | 2009-12-31 | 2015-02-11 | 巴斯夫欧洲公司 | 电子流体指示器以及指示方法 |
CN114758488B (zh) * | 2022-03-17 | 2023-02-24 | 江苏大学 | 一种无源开关装置 |
-
1995
- 1995-12-13 KR KR1019950049249A patent/KR0174871B1/ko not_active IP Right Cessation
-
1996
- 1996-06-24 JP JP8163401A patent/JP3050526B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100780838B1 (ko) * | 2006-08-16 | 2007-11-30 | 광주과학기술원 | 열 스위치 |
Also Published As
Publication number | Publication date |
---|---|
JPH09161640A (ja) | 1997-06-20 |
KR970054597A (ko) | 1997-07-31 |
JP3050526B2 (ja) | 2000-06-12 |
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Legal Events
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E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20071024 Year of fee payment: 10 |
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LAPS | Lapse due to unpaid annual fee |