KR0169398B1 - Method of making thin film transistor for lcd - Google Patents

Abstract

The present invention relates to a method for manufacturing a thin film transistor substrate for a liquid crystal display device which can increase the yield and lower the manufacturing cost by using six masks.

A first step of forming a gate line and a gate electrode on a substrate, a second step of forming a first gate pad metal connected to the gate line, and anodizing the gate electrode and the gate line to form an anodized film and then a photoresist A third step of removing the dielectric layer, a fourth step of stacking the insulating film, the semiconductor film, and the exogenous semiconductor film in sequence, and forming an active layer; forming a source / drain electrode on the exogenous semiconductor film, and then using the source / drain electrode as A fifth step of etching the exogenous semiconductor film, a protective film formed on the entire surface, and a sixth step of forming a contact hole by etching with the insulating film using a mask, and a photo-etched method using a mask after laminating a transparent conductive film The pixel electrode and the first gate pad gold connected to the source / drain electrode through a contact hole; Article made of a seventh step of forming a second gate metal pad which is connected with.

Description

Manufacturing method of thin film transistor substrate for liquid crystal display device

(A)-(g) is sectional drawing which shows the manufacturing process procedure of the thin film transistor substrate for conventional liquid crystal display devices.

2 is a plan view of a thin film transistor substrate for a liquid crystal display according to a first embodiment of the present invention.

(A)-(g) of FIG. 3 are sectional views of the A-A 'part of FIG. 2 showing the manufacturing process procedure of the thin film transistor substrate for liquid crystal display device according to the first embodiment of the present invention.

4 is a plan view of a thin film transistor substrate for a liquid crystal display according to a second exemplary embodiment of the present invention.

5A to 5F are cross-sectional views taken along line A-A 'of FIG. 4 showing a manufacturing process procedure of a thin film transistor substrate for a liquid crystal display according to a second embodiment of the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film transistor substrate for liquid crystal display devices, and more particularly, to a method for manufacturing a thin film transistor substrate for liquid crystal display devices formed using six masks.

In general, a liquid crystal display includes a thin film transistor substrate in which a plurality of pixel units in which a thin film transistor and a pixel electrode are formed are formed in a matrix form, and a gate line and a data line are formed along a pixel row and a pixel column, respectively. It includes a color filter substrate on which a common electrode is formed, and a liquid crystal material enclosed therebetween.

In this case, the gate electrode of the thin film transistor substrate receives a gate driving signal from a gate driving drive through the gate pad metal to form a channel in the semiconductor layer, and thus a data signal from the data driving drive passes through the data pad metal. It is transferred to the source electrode, and is transferred to the pixel electrode via the semiconductor layer and the drain electrode.

As the field of use of the liquid crystal display is further increased, a high yield and a reduction in manufacturing cost are urgently required.

In particular, since the photolithography process greatly affects the yield and manufacturing cost, a method for reducing the number of photolithography processes is required.

Hereinafter, a method of manufacturing a thin film transistor substrate for a liquid crystal display device will be described with reference to the accompanying drawings.

(A)-(g) is sectional drawing which shows the manufacturing process procedure of the gate pad part of the conventional thin film transistor substrate for liquid crystal display devices.

First, as shown in FIG. 1A, a conductive material is stacked on the substrate 10 and photo-etched using the first mask to form the lower gate pad metal 12-1 and the gate electrode 12. do.

Next, as shown in FIG. 1B, a portion of the lower gate pad metal 12-1 and the gate electrode 12 are anodized to form an anodic oxide film 13 using a second mask.

Next, as shown in (c) of FIG. 1, the insulating film 14, the semiconductor film 16, and the exogenous semiconductor film 18 are sequentially stacked, and then the semiconductor film 16 and the exogenous film are formed using a third mask. The semiconductor layers 18 are photo-etched to form active layers 16 and 18.

Next, as shown in FIG. 1D, a part of the insulating film 14 formed on the lower gate pad metal 12-1 is photo-etched using the fourth mask.

Next, as shown in FIG. 1E, an upper gate pad metal 20-1 connected with the lower gate pad metal 12-1 by photolithography using a fifth mask after stacking a conductive film on the entire surface. ) And a source / drain electrode 20 connected to the exogenous semiconductor film 18. The exogenous semiconductor film 18 having the source / drain electrodes 20 exposed as a mask is etched.

Next, as shown in FIG. 1 (f), after the protective film 22 is laminated on the entire surface, a contact hole is formed on the upper gate pad metal 20-1 and the source / drain electrode 20 using a sixth mask. To form.

Next, as shown in (g) of FIG. 1, after the transparent conductive film is laminated, the pixel electrode 24 connected to the source / drain electrodes 20 through the contact holes is formed by photolithography using a seventh mask. do.

As described above, in the conventional manufacturing method of the gate pad portion of the thin film transistor for liquid crystal display device, the number of masking steps for patterning is seven.

However, since the number of masking is closely related to manufacturing cost and yield, it is desirable to reduce the number of masking as much as possible.

Therefore, an object of the present invention is to reduce the number of masking, which is a problem of the prior art.

A method of manufacturing a thin film transistor substrate for a liquid crystal display device of the present invention for achieving the above object, the first step of forming a gate line and a gate electrode by laminating a conductive material on the substrate and photo-etched using a first mask, Stacking a material, applying a photoresist, and then etching a photo using a second mask to form a first gate pad metal connected to the gate line; anodizing the gate electrode and the gate line to anodize A third step of removing the photoresist after forming a photoresist, and sequentially stacking an insulating film, a semiconductor film, and an exogenous semiconductor film, and then photoetching the semiconductor film and the exogenous semiconductor film using a third mask to form an active layer. In the step, the conductive film is laminated, and the exogenous half is photo-etched using a fourth mask. Forming a source / drain electrode on the body film and then etching the exogenous semiconductor film using the source / drain electrode as a mask; stacking a protective film on the entire surface, and then etching with the insulating film using a fifth mask to form a contact hole In a sixth step of forming a transparent conductive film, a pixel electrode is connected to the source / drain electrode through the contact hole by photo etching using a sixth mask and a second gate is connected to the first gate pad metal. The seventh step of forming the pad metal.

According to another aspect of the present invention, there is provided a method of manufacturing a thin film transistor substrate for a liquid crystal display device, including: a first method of forming a gate line and a gate electrode by stacking a conductive material on a substrate and photolithography using a first mask; In an embodiment, the conductive material is stacked, a photoresist is applied, a photoetch is performed using a second mask to form a first gate pad metal connected to the gate line, and then anodization is performed on the gate electrode and the gate line. A second step of forming an oxide film and removing the photoresist, a third step of sequentially stacking an insulating film, a semiconductor film, and a second insulating film, and then etching the second insulating film using a third mask to form an etch stopper; The exogenous semiconductor layer and the source / drain conductive layer are stacked and photo-etched using a fourth mask to source / drain Forming an electrode, etching the exogenous semiconductor film and the semiconductor film using the source / drain electrodes as a mask, laminating a protective film, and etching the film together with the insulating film using a fifth mask to form contact holes In step 5, the transparent conductive layer is stacked and then photo-etched using a sixth mask to form a pixel electrode connected to the source / drain electrode and a second gate pad metal connected to the first gate pad metal through the contact hole. There is a sixth step.

With reference to the accompanying drawings, it will be described in detail the first and second embodiments of the present invention to be easily carried out by those skilled in the art.

2 is a plan view of a thin film transistor substrate for a liquid crystal display according to a first embodiment of the present invention, and FIGS. 3A to 3G are thin film transistor substrates for a liquid crystal display according to a first embodiment of the present invention. It is sectional drawing of the AA 'part of the said FIG. 2 which shows the manufacturing process sequence of the above.

First, as shown in FIGS. 2 and 3 (a), aluminum, which is a conductive material, is stacked on the substrate 10 and photo-etched using a first mask to form a gate line 12-1 and a gate electrode ( 12) form.

Next, as shown in FIGS. 2 and 3 (b), tantalum (Ta), which is a conductive material, is laminated, a photoresist PR is applied, and a photo is etched using a second mask to form a gate line ( A first gate pad metal 12-2 connected to 12-2 is formed.

Next, as shown in FIGS. 2 and 3 (c), before removing the photoresist PR, the gate electrode 12 and the gate line 12-1 are anodized to anodic oxide film 13. To form. Then, photoresist PR is removed.

Next, as shown in FIGS. 2 and 3 (d), SiNx is laminated with the insulating film 14, a-Si is deposited with the semiconductor film, and n + a-Si is deposited with the exogenous semiconductor film, and then the third mask is deposited. The semiconductor layer 16 and the exogenous semiconductor layer 18 are photo-etched using the active layers 16 and 18.

Next, as shown in FIGS. 2 and 3 (e), chromium, which is a conductive material, is stacked and then photo-etched using a fourth mask to form a source / drain electrode 20. Next, the exogenous semiconductor film 18 is etched using the source / drain electrode 20 as a mask.

Next, as shown in FIGS. 2 and 3 (f), after the SiNx, which is the protective film 22, is laminated on the entire surface, the first gate pad metal (etched together with the insulating film 14 using a fifth mask) is etched. 12-2) and contact holes are formed on the source / drain electrodes 20, respectively.

Next, as shown in FIGS. 2 and 3 (g), the ITO, which is a transparent conductive material, is laminated, and then photo-etched using a sixth mask to form an upper portion of the first gate pad metal 12-2. The pixel electrode 24 is formed on the second gate pad metal 24-1 and the active layers 16 and 18.

4 is a plan view of a thin film transistor substrate for a liquid crystal display device according to a second embodiment of the present invention, and FIGS. 5A to 5F are thin films for a liquid crystal display device according to a second embodiment of the present invention. It is sectional drawing of the AA 'part of the said FIG. 4 which shows the manufacturing process sequence of a transistor substrate.

First, as shown in FIGS. 4 and 5 (a), aluminum, which is a conductive material, is stacked on the substrate 10 and photo-etched using a first mask to form a gate line 12-1 and a gate electrode ( 12) form.

Next, as shown in FIGS. 4 and 5 (b), a first gate pad metal connected to the gate line by stacking tantalum as a conductive material, applying a photoresist, and photolithography using a second mask. Before the photoresist PR is removed, the gate electrode 12 and the gate line 12-1 are anodized to form an anodic oxide film 13. The photoresist is then removed.

Next, as shown in FIGS. 4 and 5 (c), SiNx is stacked with the insulating film 14, a-Si is stacked with the semiconductor film 16, and SiNx is stacked with the second insulating film, and then a third mask is used. The second insulating layer 17 is etched to form an etch stopper 17.

Next, as shown in FIGS. 4 and 5 (d), the exogenous semiconductor film 18 and the source / drain conductive film are laminated with chromium with n + a-Si, and the photo / etched is performed using a fourth mask. The drain electrode 20 is formed. Subsequently, the exogenous semiconductor film 18 and the semiconductor film 16 are etched using the source / drain electrode 20 as a mask.

Next, as shown in FIGS. 4 and 5 (e), after the protective film 22 is laminated with SiNx, the first layer gate pad metal (etched together with the insulating film 14 using a fifth mask) is etched. 12-2) and contact holes are formed on the source / drain electrodes 20, respectively.

Next, as shown in FIGS. 4 and 5 (f), the ITO, which is a transparent conductive material, is laminated and then photo-etched using a sixth mask to form an upper portion of the first gate pad metal 12-2. The pixel electrode 24 is formed on the second gate pad metal 24-1 and the active layers 16 and 18.

Therefore, the present invention has the effect of reducing the number of times the mask is used to form a thin film transistor substrate of the liquid crystal display using six masks, resulting in cost reduction and yield improvement.

Claims (19)

A first step of forming a gate line and a gate electrode by stacking a conductive material on a substrate and performing photolithography using a first mask, laminating a conductive material, applying a photoresist, and then etching the gate using a second mask. A second step of forming a first gate pad metal connected to the line, a third step of anodizing the gate electrode and the gate line to form an anodized film, and then removing the photoresist, an insulating film, a semiconductor film, and an exogenous semiconductor A fourth step of forming an active layer by photolithography the semiconductor film and the exogenous semiconductor film using a third mask after stacking the films in sequence, and stacking the conductive film and performing photolithography using a fourth mask on the exogenous semiconductor film After forming the source / drain electrodes, the exogenous by using the source / drain electrodes as a mask A fifth step of etching the conductor film, a sixth step of forming a contact hole by etching with the insulating film using a fifth mask after laminating a protective film on the entire surface, and etching the photo by using a sixth mask after laminating a transparent conductive film And a seventh step of forming a pixel electrode connected to the source / drain electrode and a second gate pad metal connected to the first gate pad metal through the contact hole. Method of manufacturing a substrate. The method of claim 1, wherein the gate line and the gate electrode are formed of aluminum. 2. The method of claim 1, wherein the first gate pad metal is formed of Ta. 3. The method of claim 1, wherein the insulating layer is formed of SiNx. The method of claim 1, wherein the semiconductor film is formed of a-Si. The method of claim 1, wherein the exogenous semiconductor film is formed of n + a-Si. The method of claim 1, wherein the source / drain electrodes are formed of chromium. The method of claim 1, wherein the passivation layer is formed of SiNx. The method of claim 1, wherein the second gate pad metal and the pixel electrode are formed of ITO. Stacking a conductive material on a substrate and performing photolithography using a first mask to form a gate line and a gate electrode, stacking a conductive material and applying photoresist, and then photoetching using a second mask to After the first gate pad metal is formed to be connected to the gate line, the second step of forming an anodic oxide layer by removing the photoresist by anodizing the gate electrode and the gate line, followed by an insulating film, a semiconductor film, and a second insulating film After stacking, a third step of forming an etch stopper by photo etching the second insulating layer using a third mask, stacking an exogenous semiconductor layer and a source / drain conductive layer and photo etching using a fourth mask, the source / drain electrodes And etching the exogenous semiconductor film and the semiconductor film using the source / drain electrode as a mask. Step 5 After forming a protective film, the fifth step of forming a contact hole by etching with the insulating film using a fifth mask, Laminating a transparent conductive film and then photo-etched using a sixth mask to the source through the contact hole And a sixth step of forming a pixel electrode connected to the drain electrode and a second gate pad metal connected to the first gate pad metal. The method of claim 10, wherein the gate line and the gate electrode are formed of aluminum. The method of claim 10, wherein the first gate pad metal is formed of Ta. The method of claim 10, wherein the insulating layer is formed of SiNx. The method of claim 10, wherein the semiconductor film is formed of a-Si. The method of claim 10, wherein the second insulating layer is formed of SiNx. The method of claim 10, wherein the exogenous semiconductor film is formed of n + a-Si. The method of claim 10, wherein the source / drain electrodes are formed of chromium. The method of claim 10, wherein the passivation layer is formed of SiNx. The method of claim 10, wherein the second gate pad metal and the pixel electrode are formed of ITO.