KR0159393B1 - Method for fabricating optical projection system - Google Patents
Method for fabricating optical projection system Download PDFInfo
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- KR0159393B1 KR0159393B1 KR1019950013352A KR19950013352A KR0159393B1 KR 0159393 B1 KR0159393 B1 KR 0159393B1 KR 1019950013352 A KR1019950013352 A KR 1019950013352A KR 19950013352 A KR19950013352 A KR 19950013352A KR 0159393 B1 KR0159393 B1 KR 0159393B1
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- sacrificial layer
- protective film
- membrane
- forming
- driving substrate
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000003287 optical effect Effects 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000001681 protective effect Effects 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 7
- 239000012528 membrane Substances 0.000 claims description 22
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0825—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a flexible sheet or membrane, e.g. for varying the focus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3141—Constructional details thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Abstract
본 발명은 광로조절장치의 제조방법에 관한 것으로서, 상부전극의 표면과 액츄에이터 들을 분리할 때 생성되는 측면들에 보호막을 형성함과 동시에 노출된 구동기판의 소정 부분에 인접하는 액츄에이터들에 형성된 보호막을 기계적으로 연결시키도록 브리지를 길게 형성하여 희생막을 식각용액으로 제거한 후 세정 및 건조할 때 액츄에이터들의 유동을 방지한다. 따라서, 세정 및 건조시 세정용액의 표면장력에 의해 발생되는 스티킹 현상을 방지할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical path control device, wherein a protective film is formed on surfaces of an upper electrode and side surfaces generated when separating actuators, and a protective film formed on actuators adjacent to a predetermined portion of an exposed driving substrate. The bridge is formed long to be mechanically connected to remove the sacrificial film with an etching solution, and then prevent the flow of the actuators when cleaning and drying. Therefore, it is possible to prevent the sticking phenomenon caused by the surface tension of the cleaning solution during cleaning and drying.
Description
제1도(a) 내지 (d)는 종래 기술에 따른 광로 조절 장치의 제조 공정도.1 (a) to (d) is a manufacturing process diagram of the optical path control apparatus according to the prior art.
제2도(a) 내지 (d)는 본 발명의 실시예에 따른 광로 조절 장치의 제조공정도.2 (a) to (d) is a manufacturing process diagram of the optical path control apparatus according to an embodiment of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
41 : 구동기판 43 : 패드41: drive substrate 43: pad
45 : 희생막 47 : 멤브레인45: sacrificial film 47: membrane
49 : 개구 51 : 플러그49: opening 51: plug
53 : 하부전극 55 : 변형부53: lower electrode 55: deformation part
57 : 상부전극 59 : 보호막57: upper electrode 59: protective film
61 : 브리지 63 : 에어 갭61: bridge 63: air gap
본 발명은 투사형 화상 표시장치에 이용되는 광로 조절 장치의 제조방법에 관한 것으로서, 특히 희생막을 제거하고 세정 및 건조시 스티킹(sticking)을 방지할 수 있는 광로 조절 장치의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method for manufacturing an optical path control device used in a projection image display device, and more particularly, to a method for manufacturing an optical path control device capable of removing a sacrificial film and preventing sticking during cleaning and drying.
화상표시장치는 표시방법에 따라, 직시형 화상표시장치와 투사형 화상표시장치로 구분된다.An image display apparatus is classified into a direct view type image display apparatus and a projection type image display apparatus according to a display method.
직시형화상표시장치는 CRT(Cathode Ray Tube) 등이 있는데, 이러한 CRT 화상표시장치는 화질은 좋으나 화면이 커짐에 따라 중량 및 두께의 증대와, 가격이 비싸지는 등의 문제점이 있어 대화면을 구비하는데 한계가 있다.The direct view image display device includes a CRT (Cathode Ray Tube). Such a CRT image display device has good image quality but has a problem such as an increase in weight and thickness as the screen is enlarged, and a price is expensive. There is.
투사형화상표시장치는 대화면 액정표시장치(Liquid Crystal Display : 이하 LCD 라 칭함)등이 있는데, 이러한 대화면 LCD의 박형화가 가능하여 중량을 작게 할 수 있다. 그러나, 이러한 LCD 는 편광판에 의한 광의 손실이 크고 LCD를 구동하기 위한 박막트랜지스터가 화소 마다 형성되어 있어 개구율(광의 투과면적)을 높이는데 한계가 있으므로 광의 효율이 매우 낮다.Projection type image display apparatuses include a large screen liquid crystal display (hereinafter referred to as an LCD), and such a large screen LCD can be thinned to reduce weight. However, the LCD has a high loss of light due to a large loss of light due to a polarizing plate and a thin film transistor for driving the LCD, which is formed for each pixel, which limits the aperture ratio (light transmission area).
따라서, 미합중국 Aura사에 의해 액추에이티드 미러 어레이(Actuated Mirror Arrays : 이하 AMA라 칭함)를 이용한 투사형화상표시장치가 개발되었다. AMA를 이용한 투사형화상표시장치는 광원에서 발광된 백색광을 적색, 녹색 및 청색의 광으로 분리한 후, 이 광을 액츄에이터들로 이루어진 광로 조절 장치의 구동에 의해 광로를 변경시킨다. 즉, 액츄에이터들에 실장되어 이 액츄에이터들이 개별적으로 구동되는 것에 의해 기울어지는 거울들에 각각 반사시켜 광로(light path)를 변경시키는 것에 의해 광의 양을 조절하여 화면으로 투사시킨다. 그러므로 화면에 화상이 나타나게 된다. 상기에서, 액츄에이터는 압전 또는 전왜세라믹으로 이루어진 변형부가 인가되는 전압에 의해 전계가 발생되어 변형되는 것을 이용하여 거울을 기울게 한다. AMA는 구동방식에 따라 1차원 AMA와 2차원 AMA로 구별된다. 1차원 AMA는 거울들이 M × 1 어레이로 배열되고, 2차원 AMA는 거울들이 M × N 어레이로 배열되고 있다. 따라서, 1차원 AMA를 이용한 투사형화상표시장치는 주사거울을 이용하여 M × 1 개 광속들을 선주사시키고, 2차원 AMA를 이용하는 투사형화상표시장치는 M × N개의 광속들을 투사시켜 화상을 나타내게 된다.Accordingly, a projection image display device using Actuated Mirror Arrays (hereinafter referred to as AMA) has been developed by Aura, USA. A projection image display device using AMA separates white light emitted from a light source into red, green, and blue light, and then changes the light path by driving an optical path adjusting device made of actuators. That is, the actuators are mounted on the actuators, and the actuators are individually driven to reflect the inclined mirrors, thereby changing the light path, thereby controlling the amount of light to project onto the screen. Therefore, an image appears on the screen. In the above, the actuator tilts the mirror by using an electric field generated and deformed by a voltage to which a deformable part made of piezoelectric or electrostrictive ceramic is applied. AMA is classified into one-dimensional AMA and two-dimensional AMA according to the driving method. The one-dimensional AMA has mirrors arranged in an M × 1 array, and the two-dimensional AMA has mirrors arranged in an M × N array. Therefore, the projection image display device using the one-dimensional AMA pre-scans the M × 1 beams using the scanning mirror, and the projection image display device using the two-dimensional AMA displays the image by projecting the M × N beams.
또한, 액츄에이터는 변형부의 형태에 따라 벌크형(bulk type)과 박막형(thin film type)으로 구분된다. 상기 벌크형은 다층 세라믹을 얇게 잘라 내부에 금속전극이 형성된 세라믹웨이퍼(ceramic wafer)를 구동기판에 실장한 후 쏘잉(sawing)등으로 가공하고 거울을 실장한다. 그러나, 벌크형 액츄에이터는 액츄에이터들을 쏘잉에 의해 분리하여야 하므로 긴 공정시간이 필요하며, 또한, 변형부의 응답 속도가 느린 문제점이 있었다. 따라서, 반도체공정을 이용하여 제조할 수 있는 박막형의 액츄에이터가 개발되었다.In addition, the actuator is classified into a bulk type and a thin film type according to the shape of the deformable portion. The bulk type thinly cuts a multilayer ceramic, mounts a ceramic wafer having a metal electrode therein on a driving substrate, processes it by sawing, and mounts a mirror. However, bulk actuators require a long process time because the actuators must be separated by sawing, and there is a problem that the response speed of the deformation part is slow. Therefore, a thin-film actuator that can be manufactured using a semiconductor process has been developed.
제1도(a) 내지 (d)는 종래 기술에 따른 광로 조절 장치의 제조공정도이다.1 (a) to (d) is a manufacturing process diagram of the optical path control apparatus according to the prior art.
제1도(a)를 참조하면, 표면에 트랜지스터(도시되지 않음)가 매트릭스 형태로 내장되고, 이 트랜지스터에 전기적으로 연결된 Al, TiN 또는 W 등의 금속으로 이루어진 패드(13)를 갖는 구동기판(11)의 표면에 에어 갭(air gap)을 형성하기 위한 희생막(15)을 1~2㎛ 정도의 두께로 형성한다. 그리고, 패드(13)가 형성된 부분의 희생막(15)을 통상의 포토리쏘그래피(photolithography) 방법으로 제거하여 패드(13)와 주위의 구동기판(11)을 노출시킨다.Referring to FIG. 1A, a driving substrate (not shown) having a pad (13) embedded in a matrix form and having a pad 13 made of metal such as Al, TiN, or W electrically connected to the transistor ( A sacrificial film 15 for forming an air gap on the surface of 11) is formed to a thickness of about 1 ~ 2㎛. Then, the sacrificial film 15 in the portion where the pad 13 is formed is removed by a conventional photolithography method to expose the pad 13 and the surrounding driving substrate 11.
제1도(b)를 참조하면, 상기 구동기판(11)와 희생막(15)의 상부에 멤브레인(17)을 1~2㎛ 정도의 두께로 형성한다. 그리고, 멤브레인(17)의 소정 부분에 패드(13)가 노출되도록 개구(18)를 형성한 후, 이 개구(18)의 내부에 전도성 금속을 채워 패드(13)들과 전기적으로 연결되는 플러그(plug: 19)를 형성한다. 계속해서, 멤브레인(17)의 상부에 500~2000Å 정도의 두께의 하부전극(21)을 플러그(19)와 전기적으로 연결되도록 형성한다. 그러므로, 패드(13)와 하부전극(21)은 플러그(19)에 의해 서로 전기적으로 연결된다.Referring to FIG. 1B, the membrane 17 is formed on the driving substrate 11 and the sacrificial layer 15 to a thickness of about 1 μm to 2 μm. In addition, after the opening 18 is formed to expose the pad 13 to a predetermined portion of the membrane 17, the plug 18 is electrically connected to the pads 13 by filling a conductive metal in the opening 18. plug 19). Subsequently, a lower electrode 21 having a thickness of about 500 to 2000 micrometers is formed on the membrane 17 so as to be electrically connected to the plug 19. Therefore, the pad 13 and the lower electrode 21 are electrically connected to each other by the plug 19.
제1도(c)를 참조하면, 상기 하부전극(21)의 표면에 변형부(23) 및 상부전극(25)을 형성한다. 상기에서, 변형부(23)는 압전세라믹이나 전왜세라믹을 0.7~2㎛ 정도의 두께로 도포하며, 상부전극(25)은 반사특성과 전기적특성이 좋은 금속을 증착하여 형성된다. 계속해서, 상부전극(25), 변형부(23), 하부전극(21) 및 멤브레인(17)들을 구동기판(11)이 노출되도록 식각하여 액츄에이터들을 분리한다. 상기 액츄에이터들을 분리할 때, 상부전극(25), 변형부(23), 하부전극(21) 및 멤브레인(17)들을 각각의 식각 마스크를 사용하여 반응성 이온식각(RIE)으로 식각한다. 그리고, 상부전극(25)의 표면과 액츄에이터들의 분리에 의한 측면들에 포토레지스트 등으로 보호막(27)을 형성한다.Referring to FIG. 1C, the deformation part 23 and the upper electrode 25 are formed on the surface of the lower electrode 21. In the above, the deformable portion 23 is applied to the piezoelectric ceramic or the total distortion ceramic to a thickness of about 0.7 ~ 2㎛, the upper electrode 25 is formed by depositing a metal having good reflection characteristics and electrical characteristics. Subsequently, the upper electrode 25, the deformable portion 23, the lower electrode 21, and the membrane 17 are etched to expose the driving substrate 11 to separate the actuators. When separating the actuators, the upper electrode 25, the deformable portion 23, the lower electrode 21 and the membrane 17 are etched by reactive ion etching (RIE) using respective etching masks. Then, a protective film 27 is formed on the surface of the upper electrode 25 and side surfaces of the actuators by photoresist or the like.
제1도(d)를 참조하면, 희생막(15)을 불산용액(HF) 등의 식각 용액으로 제거한다. 이때, 보호막(27)은 멤브레인(17) 및 변형부(23)의 측면이 식각되어 각층들이 박리되는 것을 방지한다. 그 다음, 희생막(15)을 제거하여 에어 갭(29)을 형성한다.Referring to FIG. 1D, the sacrificial layer 15 is removed with an etching solution such as hydrofluoric acid solution (HF). In this case, the protective layer 27 prevents sidewalls of the membrane 17 and the deformable portion 23 from being etched to separate the layers. Next, the sacrificial film 15 is removed to form an air gap 29.
그러나, 상술한 종래 기술에 따른 광로 조절 장치의 제조방법은 희생막을 용제에 의해 제거하고 이 용제가 제거되도록 세정한 후 세정액을 건조할 때 표면 장력에 의해 멤브레인의 하부가 구동기판에 부착되는 스티킹 현상이 발생되는 문제점이 있었다.However, in the method of manufacturing the optical path control apparatus according to the related art described above, after the sacrificial film is removed by the solvent, the solvent is removed to be removed, and the bottom portion of the membrane is attached to the driving substrate by the surface tension when the cleaning solution is dried. There was a problem that the phenomenon occurs.
따라서, 본 발명의 목적은 희생막을 제거한 용제를 제거하기 위한 세정 및 건조시 스티킹 현상을 방지할 수 있는 광로 조절 장치의 제조방법을 제공함에 있다.Accordingly, an object of the present invention is to provide a method for manufacturing an optical path control apparatus capable of preventing a sticking phenomenon during cleaning and drying for removing a solvent from which a sacrificial film is removed.
상기 목적을 달성하기 위한 본 발명에 따른 광로조절장치의 제조방법은 트랜지스터들을 매트릭스 상태로 내장하고 표면에 상기 트랜지스터들과 전기적으로 연결된 패드들을 갖는 구동기판의 상부에 희생막을 형성하는 공정과, 상기 패드들 주위의 소정 부분의 상기 희생막을 제거하여 상기 구동기판을 노출시키고, 상기 노출된 구동기판과 상기 희생막의 상부에 멤브레인을 형성하는 공정과, 상기 멤브레인의 소정 부분을 상기 패드가 노출되도록 제거하여 개구를 형성하고 그 개구에 플러그를 형성하는 공정과, 상기 멤브레인의 상부에 상기 플러그와 전기적으로 접촉되는 하부전극을 형성하는 공정과, 상기 하부전극의 상부에 변형부와 상부전극을 순차적으로 형성하는 공정과, 상기 상부전극 부터 상기 멤브레인까지 소정 부분을 상기 희생막이 노출되도록 제거하여 액츄에이터들을 분리하는 공정과, 상기 상부전극의 표면 및 액츄에이터의 측면에 보호막을 형성함과 동시에 상기 노출된 구동기판의 소정 부분에 보호막과 인접하는 액츄에이터의 보호막을 기계적으로 연결하는 브리지를 형성하는 공정과, 상기 희생막을 제거하는 공정과, 상기 보호막 및 브리지를 제거하는 공정을 구비한다.According to an aspect of the present invention, there is provided a method of manufacturing an optical path control apparatus, including forming a sacrificial layer on an upper surface of a driving substrate having pads embedded in a matrix state and having pads electrically connected to the transistors on a surface thereof. Removing the sacrificial layer around a predetermined portion to expose the driving substrate, forming a membrane on the exposed driving substrate and the sacrificial layer, and removing the predetermined portion of the membrane so that the pad is exposed. And forming a plug in the opening, forming a lower electrode in electrical contact with the plug on the membrane, and sequentially forming a deformable portion and an upper electrode on the lower electrode. And a portion of the sacrificial layer formed from the upper electrode to the membrane. Forming a bridge on the surface of the upper electrode and on the side of the actuator, and forming a bridge that mechanically connects the passivation layer of the actuator adjacent to the passivation layer to a predetermined portion of the exposed driving substrate. And a step of removing the sacrificial film, and a step of removing the protective film and the bridge.
이하, 첨부한 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제2도(a) 내지 (d)는 본 발명에 따른 광로조절장치의 제조공정도이다.2 (a) to (d) is a manufacturing process diagram of the optical path control apparatus according to the present invention.
제2도(a)를 참조하면, 표면에 트랜지스터(도시되지 않음)가 매트릭스 형태로 내장되고, 이 트랜지스터에 전기적으로 연결된 패드(43)를 갖는 구동기판(41)의 표면에 1~2㎛ 정도의 두께의 희생막(45)을 형성한다. 상기에서, 구동기판(41)은 유리 또는 알루미나(Al2O3) 등의 절연물질, 또는, 실리콘 등의 반도체로 이루어진다. 상기에서, 희생막(45)을 PSG(Phospho-Silicate Glass) 또는 다결정 실리콘으로 형성하되, PSG면 스핀 코팅(spin coating)방법으로, 다결정 실리콘이면 화학기상침적(Chemical Vapor Deposition : 이하, CVD라 칭함)법으로 형성한다. 그리고 패드(43)들의 주위를 포함한 소정 부분의 희생막(45)을 식각하여 구동기판(41)을 노출시킨다.Referring to FIG. 2 (a), a transistor (not shown) is built in a matrix on the surface thereof, and the surface of the driving substrate 41 having the pad 43 electrically connected to the transistor is about 1 to 2 μm. A sacrificial film 45 of thickness is formed. In the above, the driving substrate 41 is made of an insulating material such as glass or alumina (Al 2 O 3 ), or a semiconductor such as silicon. In the above, the sacrificial layer 45 is formed of PSG (Phospho-Silicate Glass) or polycrystalline silicon, and PSG surface spin coating method, if the polycrystalline silicon chemical vapor deposition (hereinafter, referred to as CVD) It is formed by the method. In addition, the sacrificial layer 45 including the periphery of the pads 43 is etched to expose the driving substrate 41.
제2도(b)를 참조하면, 상기 구동기판(41) 및 희생막(45)의 상부에 질화실리콘(Si3N4) 또는 탄화실리콘 등의 규화물을 스퍼터링 또는 CVD방법 등에 의해 1~2㎛ 정도의 두께로 침적하여 멤브레인(47)을 형성한다. 그 다음, 통상의 포토리쏘그래피 방법에 의해 멤브레인(47)의 소정 부분에 개구(49)를 형성하고, 이 개구(49)의 내부에 텅스텐(W) 또는 티타늄(Ti) 등의 금속을 채워 패드(43)들과 전기적으로 연결되는 플러그(plug : 51)를 형성한다. 계속해서, 멤브레인(47)의 상부에 백금(Pt) 또는 백금/티타늄(Pt/Ti)등을 진공 증착 또는 스퍼터링 등에 의해 500~2000Å 정도의 두께로 증착하여 하부전극(53)을 형성한다. 상기에서 하부전극(53)을 플러그(51)와 전기적으로 연결되도록 형성한다. 그러므로, 플러그(51)에 의해 패드(43)와 하부전극(53)이 전기적으로 연결된다.Referring to FIG. 2 (b), a silicide such as silicon nitride (Si 3 N 4 ) or silicon carbide, such as silicon nitride (Si 3 N 4 ) or silicon carbide, is formed on the driving substrate 41 and the sacrificial layer 45 by 1 to 2 μm. The membrane 47 is formed by depositing to a thickness of a degree. Next, an opening 49 is formed in a predetermined portion of the membrane 47 by a conventional photolithography method, and the pad is filled with a metal such as tungsten (W) or titanium (Ti) inside the opening 49. And a plug 51 which is electrically connected to the 43. Subsequently, platinum (Pt), platinum / titanium (Pt / Ti), or the like is deposited on the membrane 47 to a thickness of about 500 to 2000 mW by vacuum deposition or sputtering to form a lower electrode 53. The lower electrode 53 is formed to be electrically connected to the plug 51. Therefore, the pad 43 and the lower electrode 53 are electrically connected by the plug 51.
제2도(c)를 참조하면, 상기 하부전극(53)의 표면에 변형부(55)를 형성한다. 상기에서 변형부(55)는 BaTiO3, PZT(Pb(Zr, Ti)O3) 또는 PLZT(Pb, La), (Zr, Ti)O3) 등의 압전세라믹이나, 또는, PMN(Pb(Mg, Nb)O3) 등의 전왜세라믹을 Sol-Gel 법, 스퍼터링 또는 CVD법 등에 의해 1~2㎛ 정도의 두께로 도포 됨으로써 형성된다. 상기에서, 변형부(55)가 얇게 형성되므로 별도의 분극을 하지 않고도 구동시 인가되는 화상신호에 의해 분극된다. 계속해서, 변형부(55)의 상부에 상부전극(57)을 형성한다. 상기 상부전극(57)은 전기 전도도 및 반사 특성이 좋은 금속인 알루미늄이 스퍼터링 또는 진공증착방법으로 500~1000Å 정도의 두께로 증착되어 형성된다. 그리고, 상부전극(57), 변형부(55), 하부전극(53) 및 멤브레인(47)을 포토리쏘그래피 방법으로 소정 부분을 제거하여 액츄에이터들을 분리한다. 이때, 상부전극(57), 변형부(55), 하부전극(53) 및 멤브레인(47)은 각층 마다 각각의 식각 마스크가 필요하게 된다. 그리고, 상술한 구조의 전 표면에 포토레지스트를 도포한 후 노광 및 현상하여 보호막(59)과 브리지(bridge : 61)를 형성한다. 상기 보호막(59)은 상부전극(57)의 표면과 액츄에이터들을 분리할 때 생성되는 측면들에 형성되며, 브리지(61)는 상기 노출된 구동기판(41)의 소정 부분에 인접하는 액츄에이터들에 형성된 보호막(59)을 기계적으로 연결시키도록 길게 형성된다.Referring to FIG. 2C, the deformation part 55 is formed on the surface of the lower electrode 53. The deformation part 55 is a piezoceramic such as BaTiO 3 , PZT (Pb (Zr, Ti) O 3 ) or PLZT (Pb, La), (Zr, Ti) O 3 ), or PMN (Pb ( Mg, Nb) O 3 ) is formed by applying a total distortion ceramic, such as Sol-Gel method, sputtering or CVD method to a thickness of about 1 ~ 2㎛. In the above, since the deformable portion 55 is formed thin, it is polarized by an image signal applied during driving without any additional polarization. Subsequently, the upper electrode 57 is formed on the deformation part 55. The upper electrode 57 is formed by depositing a metal having good electrical conductivity and reflective properties to a thickness of about 500 to 1000 mW by sputtering or vacuum deposition. The actuators are separated by removing a predetermined portion of the upper electrode 57, the deformable portion 55, the lower electrode 53, and the membrane 47 by a photolithography method. In this case, each of the upper electrode 57, the deformable part 55, the lower electrode 53, and the membrane 47 requires an etching mask for each layer. Then, the photoresist is applied to the entire surface of the structure described above, followed by exposure and development to form a protective film 59 and a bridge 61. The passivation layer 59 is formed on the surface of the upper electrode 57 and the side surfaces generated when the actuators are separated, and the bridge 61 is formed on the actuators adjacent to a predetermined portion of the exposed driving substrate 41. The protective film 59 is formed long to mechanically connect the protective film 59.
제2도(d)를 참조하면, 희생막(45)을 불산(HF) 등의 식각용액으로 제거한다. 그리고, 탈이온수로 세정하여 액츄에이터에 묻은 식각용액을 제거하고, 건조하여 탈이온수를 제거한다. 상기에서 보호막(59)은 희생막(45)을 식각할 때 변형부(55) 등의 측면이 식각용액과 접촉되어 식각되는 것을 방지하며, 브리지(61)는 건조시 세정용액의 표면장력에 의해 멤브레인(47)의 하부가 구동기판(41)의 표면에 부착되는 시티킹 현상을 방지한다. 상기에서, 희생막(45)이 제거된 공간은 에어 갭(63)이 된다. 그 다음, 보호막(59)과 브리지(61)를 제거한다. 상기에서, 보호막(59) 및 브리지(61)는 태우거나 또는 플라즈마 등의 건식식각으로 제거한다.Referring to FIG. 2 (d), the sacrificial layer 45 is removed with an etching solution such as hydrofluoric acid (HF). Then, it is washed with deionized water to remove the etching solution on the actuator and dried to remove the deionized water. The protective layer 59 prevents the side of the deformable part 55 from being etched by contact with the etching solution when the sacrificial layer 45 is etched, and the bridge 61 is dried by the surface tension of the cleaning solution. The lowering of the membrane 47 prevents the phenomenon of sticking to the surface of the driving substrate 41. In the above, the space from which the sacrificial layer 45 is removed becomes the air gap 63. Next, the protective film 59 and the bridge 61 are removed. In the above, the protective film 59 and the bridge 61 are burned or removed by dry etching such as plasma.
상술한 바와 같이 본 발명은 상부전극의 표면과 액츄에이터들을 분리할 때 생성되는 측면들에 보호막을 형성함과 동시에 노출된 구동기판의 소정 부분에 인접하는 액츄에이터들에 형성된 보호막을 기계적으로 연결시키도록 브리지를 길게 형성하여 희생막을 식각용액으로 제거한후 세정 및 건조할 때 액츄에이터들의 유동을 방지한다.As described above, the present invention forms a protective film on the surface of the upper electrode and the side surfaces generated when separating the actuators, and at the same time mechanically connects the protective film formed on the actuators adjacent to a predetermined portion of the exposed driving substrate. Forming a long to remove the sacrificial film with an etching solution to prevent the flow of the actuators when cleaning and drying.
따라서, 본 발명은 세정 및 건조시 세정용액의 표면장력에 의해 발생되는 스티킹 현상을 방지할 수 있는 잇점이 있다.Therefore, the present invention has the advantage of preventing the sticking phenomenon caused by the surface tension of the cleaning solution during cleaning and drying.
Claims (9)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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KR1019950013352A KR0159393B1 (en) | 1995-05-26 | 1995-05-26 | Method for fabricating optical projection system |
US08/639,575 US5637517A (en) | 1995-05-26 | 1996-04-29 | Method for forming array of thin film actuated mirrors |
CN96105153A CN1160220A (en) | 1995-05-26 | 1996-05-09 | Method for forming array of thin film actuated mirrors |
JP8116130A JPH08327881A (en) | 1995-05-26 | 1996-05-10 | Manufacture of thin-film actuated mirror array |
Applications Claiming Priority (1)
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KR1019950013352A KR0159393B1 (en) | 1995-05-26 | 1995-05-26 | Method for fabricating optical projection system |
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KR960043844A KR960043844A (en) | 1996-12-23 |
KR0159393B1 true KR0159393B1 (en) | 1999-01-15 |
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KR1019950013352A KR0159393B1 (en) | 1995-05-26 | 1995-05-26 | Method for fabricating optical projection system |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100456771B1 (en) * | 2002-02-04 | 2004-11-12 | 주식회사 엠에스솔루션 | Piezoelectric switching device for high frequency |
-
1995
- 1995-05-26 KR KR1019950013352A patent/KR0159393B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100456771B1 (en) * | 2002-02-04 | 2004-11-12 | 주식회사 엠에스솔루션 | Piezoelectric switching device for high frequency |
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KR960043844A (en) | 1996-12-23 |
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