KR0178217B1 - Manufacturing method of optical path regulation apparatus - Google Patents
Manufacturing method of optical path regulation apparatus Download PDFInfo
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- KR0178217B1 KR0178217B1 KR1019950013355A KR19950013355A KR0178217B1 KR 0178217 B1 KR0178217 B1 KR 0178217B1 KR 1019950013355 A KR1019950013355 A KR 1019950013355A KR 19950013355 A KR19950013355 A KR 19950013355A KR 0178217 B1 KR0178217 B1 KR 0178217B1
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- 230000003287 optical effect Effects 0.000 title claims abstract description 17
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- 238000005520 cutting process Methods 0.000 claims abstract description 5
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- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0825—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a flexible sheet or membrane, e.g. for varying the focus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3141—Constructional details thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Multimedia (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
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- Ceramic Engineering (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
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Abstract
본 발명은 광로조절장치의 제조방법에 관한 것으로서, 액츄에이터들을 분리하고 쏘잉시 발생되는 입자들에 의해 액츄에이터가 오염되는 것을 방지하는 제1보호막을 형성한 후 다이아몬드 톱 등으로 유효면을 한정하는 트랙을 유효면과 무효면 사이에 구동기판의 절반 정도의 깊이로 형성한 다음 회생막을 제거하고 세정 및 건조한 후 트랙에 의해 한정된 유효면을 제외한 무효면을 기계적으로 절단한다. 따라서, 무효면을 절단하여 제거할 때 트랙에 의해 구동기판이 절반정도 절단되어 있으므로 작은 힘에 의해서도 쉽게 절단되며, 이에 의해, 발생되는 충격이 작으므로 유효면의 액츄에이터의 손상을 최소화할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical path control device, comprising: separating a actuator and forming a first protective film to prevent the actuator from being contaminated by particles generated during sawing, and then defining a track that defines an effective surface with a diamond saw or the like. A half-depth of the driving substrate is formed between the effective surface and the invalid surface, and then the regenerative film is removed, cleaned and dried, and mechanically cut the invalid surface except the effective surface defined by the track. Therefore, since the driving substrate is cut about half by the track when cutting and removing the invalid surface, it is easily cut even by a small force. As a result, the impact generated is small, thereby minimizing damage to the actuator of the effective surface.
Description
본 발명은 투사형 화상 표시장치에 이용되는 광로 조절 장치의 제조방법에 관한 것으로서, 특히, 원형을 이루는 구동기판의 모서리를 무효면을 잘라내어 사각형의 유효면을 갖도록하여 소형화를 이룰 수 있는 광로 조절 장치의 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing method of an optical path adjusting device used in a projection type image display device. More particularly, the present invention relates to a method of manufacturing an optical path adjusting device which can be miniaturized by cutting an invalid surface of a circular driving substrate to have a rectangular effective surface. It relates to a manufacturing method.
화상표시장치는 표시방법에 따라, 직시형 화상표시장치와 투사형 화상표시장치로 구분된다.An image display apparatus is classified into a direct view type image display apparatus and a projection type image display apparatus according to a display method.
직시형화상표시장치는 CRT(Cathode Ray Tube)등이 있는데, 이러한 CRT 화상표시장치는 화질은 좋으나 화면이 커짐에 따라 중량 및 두께의 증대와, 가격이 비싸지는 등의 문제점이 있어 대화면을 구비하는데 한계가 있다.Direct image display device includes CRT (Cathode Ray Tube), which has good image quality but it has problems such as increase of weight and thickness as the screen is enlarged and price is expensive. There is.
투사형화상표시장치는 대화면 액정표시장치(Liquid Crystal Display: 이하 LCD라 칭함)등이 있는데, 이러한 대화면 LCD의 박형화가 가능하여 중량을 작게 할 수 있다. 그러나, 이러한 LCD는 편광판에 의한 광의 손실이 크고 LCD를 구동하기 위한 박막 트랜지스터가 화소마다 형성되어 있어 개구율(광의 투과면적)을 높이는 데 한계가 있으므로 광의 효율이 매우 낮다.Projection type image display apparatuses include a large crystal display (hereinafter referred to as an LCD), and such a large screen LCD can be thinned to reduce the weight. However, such LCDs have a high loss of light due to a polarizing plate, and thin film transistors for driving the LCD are formed for each pixel, so that there is a limit in increasing the aperture ratio (light transmission area).
따라서, 미합중국 Aura사에 의해 액추에이티드 미러 어레이(Actuated Mirror Arrays:이하 AMA라 칭함)를 이용한 투사형 화상 표시장치가 개발되었다. AMA를 이용한 투사형 화상표시장치는 광원에서 발광된 백색광을 적색, 녹색 및 청색의 광으로 분리한 후, 이 광을 액츄에이터들로 이루어진 광로 조절 장치의 구동에 의해 광로를 변경시킨다. 즉, 액츄에이터들에 실장되어 이 액츄에이터들이 개별적으로 구동되는 것에 의해 기울어지는 거울들에 각각 반사시켜 광로(light path)를 변경시키는 것에 의해 광의 양을 조절하여 화면으로 투사시킨다. 그러므로 화면에 화상이 나타나게 된다. 상기에서, 액츄에이터는 압전 또는 전왜세라믹으로 이루어진 변형부가 인가되는 전압에 의해 전계가 발생되어 변형되는 것을 이용하여 거울을 기울게 한다. AMA는 구동방식에 따라 1차원 AMA와 2차원 AMA로 구별된다. 1차원 AMA는 거울들이 M × 1 어레이로 배열되고, 2차원 AMA는 거울들이 M × N 어레이로 배열되고 있다. 따라서, 1차원 AMA를 이용한 투사형 화상표시장치는 주사거울을 이용하여 M × 1개 광속들을 선주사시키고, 2차원 AMA를 이용하는 투사형 화상표시장치는 M × N개의 광속들을 투사시켜 화상을 나타내게 된다.Therefore, a projection type image display apparatus using Actuated Mirror Arrays (hereinafter referred to as AMA) has been developed by Aura, United States. A projection image display apparatus using AMA separates white light emitted from a light source into red, green, and blue light, and then changes the light path by driving an optical path adjusting device made of actuators. That is, the actuators are mounted on the actuators, and the actuators are individually driven to reflect the inclined mirrors, thereby changing the light path, thereby controlling the amount of light to project onto the screen. Therefore, an image appears on the screen. In the above, the actuator tilts the mirror by using an electric field generated and deformed by a voltage to which a deformable part made of piezoelectric or electrostrictive ceramic is applied. AMA is classified into one-dimensional AMA and two-dimensional AMA according to the driving method. The one-dimensional AMA has mirrors arranged in an M × 1 array, and the two-dimensional AMA has mirrors arranged in an M × N array. Therefore, the projection type image display apparatus using the one-dimensional AMA pre-scans the M × 1 beams using the scanning mirror, and the projection image display apparatus using the two-dimensional AMA displays the image by projecting the M × N luminous fluxes.
또한, 액츄에이터는 변형부의 형태에 따라 벌크형(bulk type)과 박막형(thin film type)으로 구분된다. 상기 벌크형은 다층 세라믹은 얇게 잘라 내부에 금속전극이 형성된 세라믹웨이퍼(ceramic wafer)를 구동기판에 실장한 후 쏘잉(sawing)등으로 가공하고 거울을 실장한다. 그러나, 벌크형 액츄에이터는 액츄에이터들을 쏘잉에 의해 분리하여야 하므로 긴 공정시간이 필요하며, 또한, 변형부의 응답 속도가 느린 문제점이 있었다. 따라서, 반도체공정을 이용하여 제조할 수 있는 박막형의 액츄에이터가 개발되었다.In addition, the actuator is classified into a bulk type and a thin film type according to the shape of the deformable portion. The bulk type multi-layered ceramics are thinly cut, mounted on a driving substrate with a ceramic wafer having a metal electrode formed therein, and then processed by sawing or the like and mounted on a mirror. However, bulk actuators require a long process time because the actuators must be separated by sawing, and there is a problem that the response speed of the deformation part is slow. Therefore, a thin-film actuator that can be manufactured using a semiconductor process has been developed.
상기 박막형의 액츄에이터를 갖는 일반적인 광로 조절 장치는 표면에 트랜지스터가 내장되고, 이 트랜지스터와 전기적으로 연결된 금속 패드를 갖는 구동기판의 표면에 박막의 멤브레인, 하부전극, 변형부 및 상부전극이 적층되어 일측이 부착되고 타측이 에어 갭(air gap)에 의해 이격되며, 상기 패드와 하부전극이 플러그에 의해 전기적으로 연결된다. 상기에서 하부전극에 화상신호, 즉, 구동전압이 외부회로로부터 인가되면 변형부는 하부전극과 상부전극의 전압 차이에 의해 전계가 발생되어 이 전계와 동일한 방향으로 팽창되고, 수직하는 방향으로 수축되므로 멤브레인과의 응력에 의해 액츄에이터가 경사지게 된다.A general optical path control device having a thin-film actuator has a transistor embedded in a surface thereof, and a membrane, a lower electrode, a deformation part, and an upper electrode of a thin film are stacked on one surface of a driving substrate having a metal pad electrically connected to the transistor. The other side is attached and spaced apart by an air gap, and the pad and the lower electrode are electrically connected by a plug. When an image signal, that is, a driving voltage is applied to the lower electrode from the external circuit, the deformation portion generates an electric field due to the voltage difference between the lower electrode and the upper electrode, expands in the same direction as the electric field, and contracts in the vertical direction. The actuator is inclined by the stress of over.
상기에서 광로 조절 장치는 제1도에 도시된 바와 같이 원형의 반도체 웨이퍼로 이루어진 구동기판(11)에 형성되는 데, 점선으로 표시된 사각형의 내부가 화면을 이루는 유효면(5)으로 나머지 모서리 부분은 화면과 무관한 무효면(10)이 된다.As shown in FIG. 1, the optical path adjusting device is formed on a driving substrate 11 made of a circular semiconductor wafer, and the remaining edge portion is an effective surface 5 of which an inside of a rectangle indicated by a dotted line forms a screen. It becomes an invalid surface 10 irrelevant to the screen.
그러므로, 광로 조절 장치의 소형화를 이루기 위해 유효면(5)만을 남기고 무효면(10)을 절단하여 제거하여야 한다. 구동기판(11)의 무효면(10)은 액츄에이터를 만들기 전이나, 또는, 후에 절단할 수 있다.Therefore, to achieve miniaturization of the optical path control apparatus, the invalid surface 10 should be cut off and removed, leaving only the effective surface 5. The invalid surface 10 of the drive substrate 11 can be cut before or after making the actuator.
그러나, 액츄에이터를 형성하기 전에 구동기판으로부터 무효면을 제거할 때에는 기존의 반도체 제조 장비에 전용 지그(jig)가 필요로 하며, 또한, 형성 후에는 절단시 생성되는 입자에 의해 오염되고 충격에 의해 액츄에이터가 손상되는 문제점이 있었다.However, when removing the invalid surface from the driving substrate before forming the actuator, a dedicated jig is required in the existing semiconductor manufacturing equipment, and after formation, the actuator is contaminated by particles generated during cutting and impacted by an impact. There was a problem that is damaged.
따라서, 본 발명의 목적은 반도체 제조 장비에 전용 지그가 필요하지 않고 절단시 액츄에이터가 오염 및 손상되는 것을 방지할 수 있는 광로 조절 장치의 제조 방법에 있다.Accordingly, an object of the present invention is to provide a method for manufacturing an optical path control apparatus which does not require a dedicated jig in a semiconductor manufacturing equipment and can prevent the actuator from being contaminated and damaged during cutting.
상기 목적을 달성하기 위한 본 발명에 따른 광로 조절 장치의 제조 방법은 트랜지스터들을 매트릭스 상태로 내장하고 표면에 상기 트랜지스터들과 전기적으로 연결된 패드들을 갖는 구동기판의 상부에 희생막을 형성하는 공정과, 상기 패드들 주위의 소정 부분의 상기 희생막을 제거하여 상기 구동기판을 노출시키고, 상기 노출된 구동기판과 상기 희생막의 상부에 멤브레인을 형성하는 공정과, 상기 멤브레인의 소정 부분을 상기 패드가 노출되도록 제거하여 개구를 형성하고 그 개구에 플러그를 형성하는 공정과, 상기 멤브레인의 상부에 상기 플러그와 전기적으로 접촉되는 하부전극, 변형부 및 상부 전극을 형성하는 공정과, 상기 상부 전극, 변형부 및 하부전극의 소정 부분을 제거하여 단위 액츄에이터를 한정하는 공정과, 상기 액츄에이터와 액츄에이터가 형성되지 않은 구동기판의 상부에 제1보호막을 형성하고 유효면과 무효면의 사이에 트랙을 형성하는 공정과, 상기 제1보호막을 제거하고 상기 상부전극의 표면 및 상기 액츄에이터의 측면에 제2보호막을 형성하는 공정과, 상기 희생막과 제2보호막을 제거하는 공정을 구비한다.According to an aspect of the present invention, there is provided a method of manufacturing an optical path control apparatus, including forming a sacrificial layer on an upper surface of a driving substrate having pads embedded in a matrix and electrically connected to the transistors on a surface thereof. Removing the sacrificial layer around a predetermined portion to expose the driving substrate, forming a membrane on the exposed driving substrate and the sacrificial layer, and removing the predetermined portion of the membrane so that the pad is exposed. Forming a plug and forming a plug in the opening; forming a lower electrode, a deformation portion, and an upper electrode in electrical contact with the plug on the membrane; Removing the part to define a unit actuator; and the actuator and the actuator Forming a first passivation layer on the driving substrate on which the actuator is not formed, and forming a track between the effective surface and the ineffective surface; removing the first passivation layer, and removing the first passivation layer on the surface of the upper electrode and the side surface of the actuator. Forming a protective film; and removing the sacrificial film and the second protective film.
제1도는 원형의 반도체 웨이퍼로 이루어진 구동기판의 평면도.1 is a plan view of a driving substrate consisting of a circular semiconductor wafer.
제2도(a) 내지 (e)는 본 발명에 따른 광로 조절 장치의 제조 공정도.2 (a) to (e) is a manufacturing process diagram of the optical path control apparatus according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
5 : 유효면 10 : 무효면5: valid surface 10: invalid surface
11 : 구동기판 13 : 패드11: driving substrate 13: pad
15 : 희생막 17 : 멤브레인15: sacrificial film 17: membrane
19 : 플러그 21 : 하부전극19 plug 21 lower electrode
23 : 변형부 25 : 상부전극23: deformation portion 25: the upper electrode
27 : 제1보호막 29 : 제2보호막27: first protective film 29: second protective film
이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
제2(a) 내지 (e)는 본 발명에 따른 광로 조절 장치의 제조 공정도이다.Second (a) to (e) is a manufacturing process chart of the optical path control device according to the present invention.
제2도(a)를 참조하면, 표면에 트랜지스터(도시되지 않음)가 매트릭스 형태로 내장되고, 이 트랜지스터에 전기적으로 연결된 패드(13)를 갖는 구동기판(11)의 표면에 1∼2㎛ 정도의 두께의 희생막(15)을 형성한다. 상기에서, 구동기판(11)은 유리 또는 알루미나(Al2O3)등의 절연물질, 또는, 실리콘 등의 반도체로 이루어진다. 상기에서, 희생막(15)을 PSG(Phospho Silicate Glass)로 형성한다. 그리고, 패드(13)들의 주위를 포함한 소정 부분의 희생막(15)을 식각하여 구동기판(11)을 노출시킨다.Referring to FIG. 2 (a), a transistor (not shown) is embedded in a matrix on a surface thereof, and the surface of the driving substrate 11 having a pad 13 electrically connected to the transistor is about 1 to 2 μm. A sacrificial film 15 of thickness is formed. In the above, the driving substrate 11 is made of an insulating material such as glass or alumina (Al 2 O 3 ), or a semiconductor such as silicon. In the above, the sacrificial film 15 is formed of PSG (Phospho Silicate Glass). In addition, the sacrificial layer 15 of the predetermined portion including the pads 13 is etched to expose the driving substrate 11.
제2도(b)를 참조하면, 상기 구동기판(11) 및 희생막(15)의 상부에 질화실리콘(Si3N4) 또는 탄화실리콘 등의 규화물을 스퍼터링 또는 CVD 방법 등에 의해 1∼2㎛ 정도의 두께로 침적하여 멤브레인(17)을 형성한다. 그 다음, 통상의 포토리쏘그래피 방법에 의해 멤브레인(17)의 소정 부분에 개구를 형성하고, 이 개구의 내부에 텅스텐(W) 또는 티타늄(Ti) 등의 금속을 채워 패드(13)들과 전기적으로 연결되는 플러그(plug: 19)를 형성한다. 계속해서, 멤브레인(17)의 상부에 백금(Pt) 또는 백금/티타늄(Pt/Ti)등을 진공증착 또는 스퍼터링 등에 의해 500∼2000Å 정도의 두께로 증착하여 하부전극(21)을 형성한다. 상기에서 하부전극(21)을 플러그(19)와 전기적으로 연결되도록 형성한다. 그러므로, 플러그(19)에 의해 패드(13)와 하부전극(21)이 전기적으로 연결된다.Referring to FIG. 2 (b), silicides such as silicon nitride (Si 3 N 4 ) or silicon carbide, such as silicon nitride (Si 3 N 4 ) or silicon carbide, are formed on the driving substrate 11 and the sacrificial layer 15 by 1 to 2 μm. It is deposited to a thickness of a degree to form the membrane (17). Then, an opening is formed in a predetermined portion of the membrane 17 by a conventional photolithography method, and the inside of the opening is filled with metal such as tungsten (W) or titanium (Ti) to be electrically connected with the pads 13. To form a plug (plug) 19. Subsequently, platinum (Pt), platinum / titanium (Pt / Ti), or the like is deposited on the membrane 17 to a thickness of about 500 to 2000 kPa by vacuum deposition or sputtering to form a lower electrode 21. The lower electrode 21 is formed to be electrically connected to the plug 19 in the above. Therefore, the pad 13 and the lower electrode 21 are electrically connected by the plug 19.
제2도(c)를 참조하면, 하부 전극(21)의 표면에 변형부(23)를 형성한다. 상기에서 변형부(23)를 BaTiO3, PZT(Pb(Zr, Ti)O3) 또는 PLZT(Pb, La)(Zr, Ti)O3)등의 압전세라믹이나, 또는, PMN(Pb(Mg,Nb)O3) 등의 전왜세라믹을 Sol-Gel 상태에서 스핀 코팅(spin coating) 또는 스프레이 코팅(spray coating)으로 1∼2㎛ 정도의 두께로 도포하고 고온으로 열처리하여 형성한다. 상기에서, 변형부(23)의 두께가 얇게 형성되므로 별도의 분극을 하지 않고도 구동시 인가되는 화상신호에 의해 분극된다. 그리고, 변형부(23)의 상부에 상부전극(25)을 형성한다. 상기 상부전극(25)은 전기 전도도 및 반사 특성이 좋은 금속인 알루미늄이 스퍼터링 또는 진공증착 방법으로 500∼1000Å 정도의 두께로 증착되어 형성되며 거울면으로도 이용된다. 그리고, 포토리쏘그래피 방법으로 상부전극(25), 변형부(23), 하부전극(21) 및 멤브레인(17)의 소정부분을 제거하여 액츄에이터들을 분리한다. 이때, 상부전극(25), 변형부(23), 하부전극(21) 및 멤브레인(17)은 각층마다 각각의 식각 마스크가 필요하게 된다. 그리고, 상술한 구조의 표면에 포토레지스트를 도포하여 제1보호막(27)을 형성한다. 그리고 제1도에 도시된 유효면(5)와 무효면(10)의 사이에 트랙(track: 28)을 형성한다. 상기 트랙(28)은 유효면(5)을 한정하는 것으로 다이아몬드 톱(diamond saw) 등으로 구동기판(11) 두께의 절반 정도의 깊이로 형성된다. 상기에서 제1보호막(27)을 제거한다. 그리고 다시 전 표면에 포토레지스트를 도포하고 노광 및 현상하여 상부 전극(25)의 표면과 액츄에이터들을 분리할 때 생성되는 측면들에 제2보호막(29)을 형성된다. 상기 제2보호막(29)은 상부전극(25)의 표면과 변형부(23) 등의 측면이 노출되지 않도록 감싸게 된다.Referring to FIG. 2C, the deformation part 23 is formed on the surface of the lower electrode 21. In the above-described deformation portion 23, piezoelectric ceramics such as BaTiO 3 , PZT (Pb (Zr, Ti) O 3 ) or PLZT (Pb, La) (Zr, Ti) O 3 ), or PMN (Pb (Mg) A total distortion ceramic such as Nb) O 3 ) is applied by spin coating or spray coating in a Sol-Gel state to a thickness of about 1 to 2 μm and heat-treated at a high temperature. In the above, since the thickness of the deformable portion 23 is thin, it is polarized by an image signal applied during driving without additional polarization. The upper electrode 25 is formed on the deformable portion 23. The upper electrode 25 is formed by depositing a metal having good electrical conductivity and reflective properties to a thickness of about 500 to 1000 mW by sputtering or vacuum deposition, and also used as a mirror surface. The actuators are separated by removing a predetermined portion of the upper electrode 25, the deformable portion 23, the lower electrode 21, and the membrane 17 by a photolithography method. In this case, each of the upper electrode 25, the deformable portion 23, the lower electrode 21, and the membrane 17 requires an etching mask for each layer. Then, a photoresist is applied to the surface of the above-described structure to form the first protective film 27. A track 28 is formed between the effective surface 5 and the invalid surface 10 shown in FIG. The track 28 defines an effective surface 5 and is formed to a depth of about half the thickness of the driving substrate 11 by a diamond saw or the like. The first passivation layer 27 is removed from the above. The second passivation layer 29 is formed on side surfaces generated when the photoresist is applied, exposed and developed on the entire surface to separate the actuator from the surface of the upper electrode 25. The second passivation layer 29 is wrapped to prevent the surface of the upper electrode 25 and the side surfaces of the deformable portion 23 from being exposed.
제2도(e)를 참조하면, 희생막(15)을 불산(HF) 등의 식각용액으로 제거하여 에어 갭을 한정한다. 상기에서 제2보호막(29)은 희생막(15)을 식각할 때 상부전극(25)의 표면과 변형부(23) 등의 측면이 식각용액과 접촉되어 식각되는 것을 방지한다. 그 다음, 탈이온수로 세정하여 액츄에이터에 묻은 식각용액을 제거한 후 건조하고, 제2보호막(29)을 태우거나 또는 플라즈마 등의 건식식각 방법으로 제거한다. 그리고, 트랙(28)에 의해 한정된 유효면(5)을 제외한 무효면(10)을 기계적으로 절단한다. 상기 무효면(10)을 절단할 때 구동기판(11)이 트랙(28)에 의해 절반 정도 절단되어 있으므로 작은 힘에 의해서도 쉽게 절단되어 발생되는 충격이 작으므로 유효면(5)의 액츄에이터를 손상시키지 않게 된다.Referring to FIG. 2E, the sacrificial layer 15 is removed with an etching solution such as hydrofluoric acid (HF) to define an air gap. The second passivation layer 29 prevents the surface of the upper electrode 25 and the side surface of the deformable portion 23 from being etched by the etching solution when the sacrificial layer 15 is etched. Then, the resultant is rinsed with deionized water to remove the etching solution from the actuator, followed by drying. The second protective layer 29 is burned or removed by dry etching such as plasma. And the invalid surface 10 except the effective surface 5 defined by the track 28 is mechanically cut | disconnected. Since the driving substrate 11 is cut about half by the track 28 when the invalid surface 10 is cut, the impact generated by the small force is easily cut, so that the actuator of the effective surface 5 is not damaged. Will not.
상술한 바와 같이 본 발명에 따른 광로 조절 장치의 제조 방법은 액츄에이터들을 분리하고 쏘잉시 발생되는 입자들에 의해 액츄에이터가 오염되는 것을 방지하는 제1보호막을 형성한 후 다이아몬드 톱 등으로 유효면을 한정하는 트랙을 유효면과 무효면 사이에 구동기판 두께의 절반 정도의 깊이로 형성한 다음 희생막을 제거하고 세정 및 건조한 후 트랙에 의해 한정된 유효면을 제외한 무효면을 기계적으로 절단한다.As described above, the manufacturing method of the optical path control device according to the present invention is to separate the actuators and form the first protective film to prevent the actuator from being contaminated by particles generated during sawing, and then to define the effective surface with a diamond saw or the like. A track is formed between the effective and invalid surfaces to a depth of about half the thickness of the driving substrate, and then the sacrificial film is removed, cleaned and dried, and then mechanically cut the invalid surface except the effective surface defined by the track.
따라서, 본 발명에 따르면, 무효면을 절단하여 제거할 때 트랙에 의해 구동기판이 절반정도 절단되어 있으므로 작은 힘에 의해서도 쉽게 절단되며, 이에 의해, 발생되는 충격이 작으므로 유효면의 액츄에이터의 손상을 최소화할 수 있는 잇점이 있다.Therefore, according to the present invention, since the driving substrate is cut about half by the track when the invalid surface is cut and removed, it is easily cut even by a small force. As a result, the impact generated is small, thereby preventing damage to the actuator on the effective surface. There is an advantage that can be minimized.
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