KR0148371B1 - Exposure apparatus - Google Patents

Abstract

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Description

Exposure device

1 is a block diagram of an exposure apparatus according to the present invention.

2 is a perspective view showing the main part of the exposure apparatus of the first embodiment.

3 is a longitudinal sectional view showing the wafer mounting stage of the exposure apparatus cut out.

4 is a diagram schematically showing a light irradiation body.

5 is a process chart showing an exposure process.

6 and 7 are side views schematically showing the circumferential edge of the semiconductor wafer from the side to explain the irradiation state of light, respectively.

8 and 9 are plan views schematically showing the periphery of the semiconductor wafer from the top to explain the irradiation state of light, respectively.

10 to 15 are plan views showing semiconductor wafers exposed to light under predetermined conditions, respectively.

16 is a perspective view showing the main part of the exposure apparatus of the second embodiment.

* Explanation of symbols for main parts of the drawings

10: exposure apparatus 10a: exposure system

10b: control system 10c: stage system

11: stage rotating mechanism (rotating means) 11a: axis

12: stage (stage means) 13a, 13b, 13c: oblique section

14 hollow part 15 back light

16 lens 17 light sensor (CCD image sensor)

18: end face detection means (reference position detecting means) 20: light introduction pipe (optical fiber)

21: light irradiation body (light irradiation means) 22: slider mechanism (moving means)

23: drive mechanism (moving means) 30: reference signal generator

31 sensor driving circuit 32 divider

33: stage rotation drive circuit 34: sensor output processing circuit

35: memory element (memory means) 36: input portion (input means)

37: drive circuit 42: slider mechanism

43: drive mechanism 102: container

103: hole of the aperture 104 104: aperture

105: lens 106: lens

107: light beam W: wafer

M: Identification mark E: Edge of wafer W

This invention relates to the exposure apparatus used for a semiconductor device manufacturing process.

Generally, the lithography process in the manufacture of a semiconductor device includes five processes, a surface treatment process, a resist coating process, an exposure process, a developing process, and an etching process. In these processes, vacuum apparatuses, such as a projection type exposure apparatus and an etching apparatus, are used. Such vacuum apparatuses generally have a mechanical mechanism for clamping a wafer in a member, and the wafer may be conveyed or fixed to a stage by the mechanical mechanism.

However, if the post-treatment is insufficient in the resist coating step, the resist may remain in the peripheral portion of the semiconductor wafer. In such a case, when the wafer is clamped by the mechanical mechanism, the remaining resist is peeled off from the wafer due to the contact of the clamp member, which becomes foreign matter such as dust, and thus the cleanliness of the clean room is reduced.

As a means of preventing foreign matter (dust) from such circumstances, Japanese Patent Application Laid-Open No. 53-37706, Japanese Patent Application Laid-Open No. 55-12750, Japanese Patent Application Laid-Open No. 58-58731, Japanese Patent Application Laid-Open No. 58-191434 There is a side cleaning technique disclosed in Japanese Patent Application Laid-Open No. 60-94660, Japanese Patent Application Laid-Open No. 61-111151, Japanese Patent Application Laid-Open No. 61-121333, and Japanese Patent Application Laid-Open No. 61-184824.

Further, as foreign matter generation means, Japanese Patent Application Laid-Open No. 58-200537, Japanese Patent Laid-Open No. 58-81932, Japanese Patent Laid-Open No. 59-67930, Japanese Patent Laid-Open No. 60-110118, Japanese Patent Laid-Open No. 60-121719 There is a back cleaning technique disclosed in Japanese Patent Application Laid-Open No. 60-189937 and Japanese Patent Laid-Open No. 61-239625.

However, in each of the resist removal techniques described above, since the wafer is processed while the wafer is rotated, a resist is likely to remain in the portion of the orientation plate (O.F.) of the wafer, which may peel off. In order to solve this problem, when the resist removal range is widened, the number of semiconductor devices per wafer decreases, and the product yield decreases. In addition, if a resist rises at the boundary between the resist removal area and the non-removal area, and a device aiming at a plurality of points other than the exposure area is used, the focal blur occurs in the area where the resist is raised. .

Therefore, in order to solve the said problem, the technique which performs the same process as the peripheral edge part other than an OF part to an OF part is disclosed by Unexamined-Japanese-Patent No. 59-117123 and 61-219135. . According to this technique, the porous member including the solvent is brought into contact with the periphery of the wafer to remove the resist.

However, even in the above technique, problems such as defocusing during exposure cannot be solved. In order to eliminate the focal blur at the time of exposure, the exposure technique for removing the resist layer at the peripheral edge of the wafer into a ring shape is disclosed in Japanese Patent Laid-Open Nos. 58-159535, 61-73330, and 60-73. 94661 is disclosed.

According to this technique, the wafer is attracted by a chuck having a cam having a shape similar to that of the contour shape of the semiconductor wafer on the rotating shaft. Then, the wafer is rotated in the state where the exposure light source guided by the optical fiber is imitated on the cam to expose the wafer circumferential edge.

However, in the exposure apparatus of the imitation cam method described above, there is an inconvenience in that the cam must be replaced depending on the type of wafer, which hinders the automation (FA) of the exposure process. In addition, there is a drawback that dust is generated due to wear of the cam.

In the above exposure technique, the resist of the mutual contact portion is removed in advance in order to avoid peeling of the resist from the mutual contact portion of the mechanical arm and the wafer during conveyance of the semiconductor wafer. According to this, since the resist is removed by exposing the entire outer periphery of the wafer including the mutually contacting portions, there is a drawback that the resist around the wafer edge which does not come in direct contact with the mechanical arm is unnecessarily removed.

In addition, in the above exposure technique, since ultraviolet light is guided from the optical fiber to the wafer and moved on the wafer, the vibration of the drive system is transmitted to the fiber, so that a smooth exposure image is not obtained.

In addition, the method of reading the CCD line sensor has a low yield in the present state. Moreover, since the adjustment range of the exposure amount per unit time is small, foam of a resist may generate | occur | produce.

An object of the present invention is to provide an exposure apparatus capable of preventing generation of foreign matters such as dust and preventing focal blur during exposure.

It is also an object of the present invention to provide an exposure apparatus capable of local exposure and capable of exposing a wafer at high yield without being influenced by the contour shape of the semiconductor wafer.

According to one embodiment of the present invention, there is provided a stage means on which a to-be-processed plate coated with a film for forming a device pattern is placed, a rotation means for rotating the stage means, and light irradiation means formed to face the mounting surface of the stage means. And slider means for reciprocating along a straight line through the center of the surface on which the light irradiation means is placed, exposure range input means for inputting a desired exposure range of the target plate, and a furnace for storing the input exposure range. A wide range storage means, reference position detection means for detecting a reference position of the target plate, relative position relationship detection means for detecting a relative positional relationship between the detected reference position and the light irradiation means, the relative position and the Control means for controlling the slider means in response to an exposure range, and in response to the relative position and the exposure range; And a light amount control means for controlling the amount of light irradiated from the light irradiation means to the target plate.

EXAMPLE

EMBODIMENT OF THE INVENTION Hereinafter, various Example of this invention is described, referring drawings.

In this embodiment, an example in which the exposure apparatus is used for the side cleaning step or the back cleaning step will be described. As in FIG. 1, the exposure apparatus 10 is comprised by the exposure system 10a, the control system 10b, and the stage system 10c. The exposure system 10a has a drive mechanism 23. As shown in FIG. 2, the drive mechanism 23 is for moving the slider mechanism 22 in a horizontal plane. The light irradiating body 21 is attached to the slider mechanism 22.

As shown in FIG. 1, the drive mechanism 23 is a stage rotation mechanism (of the stage system 10c) via the drive circuit 37, the memory element 35, and the stage rotation drive circuit 33 of the control system 10b. 11). On the other hand, the drive mechanism 23 is connected to the optical sensor 17 of the stage system 10c via the drive circuit 37, the memory element 35, and the sensor output processing circuit 34. Further, the sensor drive circuit 31 connected to the memory element 35 and the reference signal generator 30 is connected to a drive mechanism (not shown) for moving the support member of the optical sensor 17.

The sensor driving circuit 31 has a function of forming a driving pulse using the clock signal generated from the reference signal generator 30. On the other hand, the stage rotation driving circuit 33 has a function of forming a driving pulse by using a pulse obtained by dividing the clock signal of the reference signal generator 30 from the divider 32.

In addition, the sensor output processing circuit 34 compares the output signal level and the set threshold (dress holder) value every one pulse of the scan of the optical sensor 17, whereby the peripheral edge portion of the wafer W ( And the OF part).

As shown in FIG. 2, the stage rotating mechanism 11 has a stepping motor (not shown). This stepping motor is connected so that a rotation angle can be pulse-controlled by the command signal from the stage rotation drive circuit 33. FIG. The rotary mechanism 11 is connected to the stage 12 via the shaft 11a. The semiconductor wafer W having an orientation plate is placed on the stage 12.

As shown in FIG. 3, the hollow part 14 is formed in the stage 12, This hollow part 14 is connected to the suction port of a vacuum pump (not shown). The end face detection means 18 is formed in the vicinity of the peripheral edge portion of the wafer W on the stage 12. The end surface detection means 18 is for detecting the exposure reference position of the wafer W, and has a backlight 15, a lens 16, and an optical sensor 17. As shown in FIG. The backlight 15 faces the lens 16 with the peripheral edge portion of the wafer W interposed therebetween. The optical sensor 17 is formed further above the lens 16.

The optical sensor 17 is constituted by a one-dimensional sensor using a solid state imaging device, for example, a charge couple device (CCD).

As shown in FIG. 2, the light irradiating body 21 faces the peripheral portion of the wafer W placed on the stage 12. The light irradiating body 21 is guided to the vicinity of the circumferential edge of the wafer W by the slider mechanism 22. That is, when the slider mechanism 22 reciprocates by the drive mechanism 23, the light irradiation body 21 will go out or enter the upper region of the wafer W. As shown in FIG.

As shown in FIG. 4, the light irradiating body 21 has an aperture 104, first and second lenses 105, 106. These are housed in the container 102. The end of the light introduction pipe 20 is connected to the container 102 through the upper opening of the container 102. The light introduction pipe 20 is made of an optical fiber and a liquid fiber (YULLA FINE TECHNOLOGY brand of Y company). The base part of the light introduction tube 20 is connected to a UV light source (not shown).

UV light introduced into the container 102 by the light introduction pipe 20 passes through the hole 103 of the diaphragm 104. The hole 103 is formed in a square or a rectangle. The first and second lenses 105 and 106 are arranged in a passing optical path of the diaphragm 104, and the light beam 107 of UV light is connected to the peripheral edge surface of the wafer W. have. A ring skirt is attached to the lower portion of the light irradiation body 21 to prevent the reflected light from the wafer W from entering the light irradiation body 21. Moreover, it is preferable that the inner wall surface of the container 102 of the light irradiation body 21 is black.

The slider mechanism 22 has a bowl screw (not shown). The driving force is transmitted from the drive mechanism 23 to the slider mechanism 22 through this bowl screw. The drive mechanism 23 is adapted to be driven as a stepping motor. Further, the exposure system 10a may be formed at the same position as the end surface detection means 18. It is expected to improve the yield by forming both at the same position.

The operation of these end surface detection means 18 and the exposure system 10a is controlled by transmitting and receiving a predetermined command signal and detection signal from the control system 10b.

Next, the case where the semiconductor wafer W is exposed using the above exposure apparatus will be described with reference to FIGS. 5 to 15 and Table 1.

(I) First, a recipe required for exposure of various semiconductor wafers W is input to the input unit 36 in advance. The input of the recipe depends on the key input by the keyboard, the planar data reading input by the surface sensor, and the like.

Recipe parameters include "pass command", "low illuminance limit value", "first plate length", "sequence parameter", and the like.

The "pass command" designates the presence or absence of an exposure process. For example, the processes of serial numbers 1 to 5 are conditions for not specifying passage, respectively, and the processes for serial number 6 are conditions for specifying passage.

The "lower illuminance lower limit value" is the lowest illuminance required to start the exposure process, and the wafer W is not taken in until the lower limit of the illuminance of the light irradiating body 21 is set. For example, the setting range is set to 0 to 9900 ms, the setting range is set to 100 ms, and in the processing of serial numbers 1 to 5, the lower illuminance lower limit value is set to 1000 ms. In addition, in the process of serial number 6, it is not necessary to set.

The "first plate length" is the length of the outer edge of the O.F. portion of the wafer. Based on this plate length, the center portion of the outer end portion of the O.F. portion is detected as the reference position. For example, the setting range is 10 to 150 mm, the setting unit is 1 mm, and any exposure process of serial numbers 1 to 6 sets the initial plate length to 55 mm. In the single round exposure (exposure at which the exposure range angle is 360 °), the setting is unnecessary.

Next, the "sequence parameter" will be described.

The "sequence parameter" is for setting the exposure area. Specifically, a combination of parameters of "exposure start orientation", "exposure range angle", "exposure width", and "circumferential exposure time" shown in the horizontal column of Table 1 In this example, a plurality of sequences can be set in one exposure process.

"Exposure start orientation" is set as the azimuth angle of counterclockwise rotation in FIGS. 10-14 by making the center point of O.F. The settable range is 0 to 359 ° and the set unit is 1 °. In the case of exposure in one week, this setting is ignored.

The "exposure range angle" is set as an angle sandwiched between the exposure start azimuth angle and the exposure end azimuth angle. The settable range is 0 to 360 ° and the setting unit is 1 °. If this is set to 360 °, it is treated as one week of exposure, and the exposure start orientation is ignored.

"Exposure width" sets the position which should be exposed toward the center part rather than the peripheral part of the wafer W. As shown in FIG. The settable range is 0 to 35.0 mm and the setting unit is 0.1 mm.

The "circumferential conversion exposure time" is for setting the rotational speed of the wafer W at the time of exposure processing as time. The set time is a conversion time when the wafer W is rounded. For example, when the exposure range angle is set at 180 degrees, the diurnal conversion exposure time is set to 20 seconds, the range of 180 degrees of the wafer W is exposed for 10 seconds (= 20 x 18/360).

(II) When the predetermined recipe is input to the input unit 36 in advance as described above, the exposure of the exposure apparatus 10 is turned on to start the exposure process. The semiconductor wafer W is loaded into the stage system 10c by a transfer mechanism (not shown) (step 71), and the wafer W is placed on the stage 12 after positioning (step 72).

The resist of predetermined thickness is apply | coated to the surface of the wafer W. As shown in FIG. When the wafer W is placed on the stage 12, the wafer W is vacuum-absorbed on the stage 12.

(III) The exposure system 10a and the stage system 10c are each sequence controlled based on the command signal from the control system 10b. That is, a signal is sent from the stage rotation drive circuit 33 to the stage rotation mechanism 11, and the stage 12 is rotated at the speed of 1-6 rpm (step 73).

(IV) The optical sensor (CCD image sensor) 17 of the end surface detection unit 18 is scanned in synchronization with each step of the stepping motor of the stage rotating mechanism 11. By this scanning, the position of the edge of the semiconductor wafer W is detected (step 74).

Here, the output signal from the photosensor 17 is obtained as a voltage level difference proportional to the position of the edge of the wafer W. Based on this output signal, the sensor output processing circuit 34 calculates the distance of the exposure area from the edge of the wafer W to a predetermined position. In this case, in accordance with the irradiation light from the backlight 15, the contrast of the output signal of the optical sensor 17 is increased. The backlight 15 may be a one-dimensional LCD or may be a surface light source. In addition, when the sensitivity of the photosensor 17 is high, it is not necessary to necessarily light up the backlight 15.

The lens 16 is for the detection width of the optical sensor 17. For this reason, it is not necessary to necessarily use when the size difference of the wafer W to be processed is not so large.

Here, it is preferable to use the CCD image sensor which is a solid-state image sensor as the optical sensor 17. As shown in FIG. This is because the CCD image sensor can detect a slight light amount difference with high sensitivity even if the object to be processed has light transmittance such as glass.

In the case of one-week exposure, after detecting the half-halves of the front half, the remaining half-circuit detection can be processed in parallel with the half-halves of the front half, so that the processing time can be shortened.

(V) Next, the detection information regarding the edge position of the wafer W is stored in the storage element 35 of the control system 10b (step 75). Based on this stored information and a predetermined recipe, the processing width of exposure required for side cleaning or back cleaning and the center point (reference point) of the edge of the O.F. portion are calculated (step 76).

Based on this calculation result, the irradiation position of the light by the exposure system 10a is controlled. In addition, the light irradiating body 21 is irradiated with a light beam from a light source (not shown) through the light introduction pipe 20. As an exposure light source, a mercury lamp or a xenon lamp is used, for example.

The irradiation position of the exposure beam is determined based on the information stored in the storage element 35. For side cleaning and back cleaning of the wafer W, a signal for calculating a desired area to be exposed is sent from the memory element 35 to the driving circuit 37. Based on this signal, the operations of the slider mechanism 22 and the drive mechanism 23 are controlled as described later.

(VI) First, the stage 12 is rotated by a predetermined angle to stop the wafer W with respect to the light irradiating body 21 at a position in a predetermined exposure start direction (step 77).

Then, the light irradiating body 21 is moved to a predetermined position in accordance with the exposure width (step 78).

Next, the predetermined amount of light is irradiated from the light irradiation body 21 while rotating the stage 12 at predetermined speed (step 79). As a result, a desired area of the wafer W is exposed. In this case, a shutter may be provided in the optical path from the light irradiator 21 to adjust the light amount of the irradiated light. For example, the wafer W is continuously exposed for each step by the stepping motor in a fixed state on the stage 12. As a result, the exposure treatment can be performed on the portion of the wafer W in which the O.F. portion and the exposure angle have been designated in the same manner as other wafer peripheral edge portions.

In the case of multiple exposure, the process returns to Step 77 from Step 79 and Steps 77 to 79 are executed again.

With reference to FIGS. 6-9, the irradiation state of the exposure light with respect to the circumferential edge part of the wafer W is demonstrated in detail.

The light beam 103 is tightened in a rectangle by the diaphragm 104 of the light irradiating body 21.

As shown in FIG. 6, the light beam 107 may be irradiated only to the peripheral edge of the wafer W. Preferably, as shown in FIG. 7, the edge E of the wafer W is Irradiate to block light beam 107. 6 and 7, the edge portion E of the wafer is exaggerated and triangularly illustrated.

As shown in FIG. 8, although the imaging shape of the light beam 107 may be made rectangular, Preferably each corner of a rectangle is smoothed like FIG. In addition, the imaging shape of the light beam 107 may be an elliptical spot. This is because when the angle of the corner portion of the irradiation area is narrowed, the illuminance of light at each corner portion is lowered, and uniform ambient exposure is inhibited.

(Iv) When the desired exposure process up to step 79 is completed, the wafer W is taken out from the exposure apparatus 10 by the transfer mechanism (not shown) (step 80). After unloading, the wafer W is developed and washed, and the resist film is partially removed to obtain a predetermined pattern.

Next, the case where the wafer W is exposed under various conditions will be described with reference to FIGS. 10 to 15 and Table 1.

The wafer W shown in FIG. 10 is exposed under the condition corresponding to serial number 1 in Table 1. FIG. In the drawing, the oblique portion 13a represents an exposure area where the wafer W is exposed at 360 ° with a width of 4 mm.

The wafer W shown in FIG. 11 is exposed under the condition corresponding to serial number 2 in Table 1. FIG.

In the figure, the oblique portions 13a and 13b represent exposure regions in which the peripheral edge portion of the wafer W is exposed at 360 ° in multiple times at a width of 4 mm and a width of 8 mm, respectively.

The wafer W shown in FIG. 12 is exposed under the condition corresponding to serial number 3 in Table 1. FIG. In the drawing, the oblique portion 13a selects the exposure start direction at 90 degrees, and shows an exposure area in which the peripheral edge portion of the wafer W is partially exposed by 4 to 30 degrees in width.

The wafer W shown in FIG. 13 is exposed under the conditions corresponding to serial number 4 in Table 1. As shown in FIG. In the drawing, the oblique portion 13a represents an exposure area in which the peripheral edge portion of the wafer W is exposed by 360 ° at a width of 4 mm, and the oblique portion 13b represents the peripheral edge portion of the wafer W by a width of 8 mm to 30 degrees. The partially exposed exposure region is shown, and the oblique portion 13c represents the exposure region in which the peripheral edge portion of the wafer W is partially exposed by 6 ° to 30 ° in width.

The wafer W shown in FIG. 14 is exposed under the condition corresponding to serial number 5 in Table 1. FIG. In the drawing, the oblique portions 13a, 13b, and 13c select exposure start directions of 45 degrees, 165 degrees, and 285 degrees, respectively, and partially expose the peripheral edge of the wafer W by 4 mm to 30 degrees in width, respectively. One exposure area is shown.

The wafer W shown in FIG. 15 shows that the exposure process is omitted under the conditions corresponding to the serial number 6 in Table 1, that is, the pass command.

As a result of developing and cleaning the respective wafers W shown in FIGS. 10 to 14, the local rise of the resist film did not occur. For this reason, the occurrence of so-called focal blur can be prevented, and a detailed fine pattern can be easily formed in the semiconductor wafer W.

In addition, by using the identification mark M of the wafer W shown in FIGS. 12 and 15, instead of the center point of the OF portion, the center point of the identification mark M is selected as a reference point to set the exposure area. Also good.

Incidentally, in the above embodiment, the CCD image sensor is used as the optical sensor 17 of the end face detection means 18. However, any sensor may be used as long as it can detect the peripheral edge of the wafer W in a non-contact manner. .

In the above embodiment, the case where the bowl screw is used for the slider mechanism 22 has been described. However, the present invention is not limited thereto, and a mechanism having a timing belt, a linear motor, or the like may be employed.

Further, as shown in FIG. 16, the slider mechanism 42 and the drive mechanism 43 may be formed at a position lower than the wafer W. As shown in FIG. In this manner, dust generated in the mechanisms 42 and 43 becomes difficult to adhere to the wafer W.

In addition, the cleanliness can also be increased as a whole of the apparatus. In addition, in the above embodiment, the case where the semiconductor wafer is used as the exposure target object has been described. However, the object to be treated is not limited to this, and a rectangular glass substrate such as a liquid crystal display (LCD) device coated with a film is treated. You may also do it.

Incidentally, in the above embodiment, the case where the surface of the semiconductor wafer is treated has been described. However, the treatment of the peripheral edge portion may be performed, and the back surface can be processed in the same manner.

In the above embodiment, the peripheral edge portion is exposed while the semiconductor wafer is fixed with the rotating shaft, but the position of the rotating shaft may be adjusted based on the data information of the wafer edge portion.

In addition, in the above embodiment, the case where the exposure treatment was performed with the illuminance of the exposure light source as a constant was described, but it can be processed even when the illuminance is lower than the initial use. This is called what is called integrated exposure, and it can implement | achieve by having a control system the function which compensates the quantity of illumination intensity fall by extending an exposure time.

Next, the effect of this invention is demonstrated collectively.

According to the exposure apparatus of the present invention, generation of foreign matters other than the resist can be prevented. It can also prevent defocus.

And only the desired part of a to-be-processed board can be selectively exposed. Moreover, exposure can be performed with high yield, without being influenced by the contour shape of a to-be-processed board.

As a result of the various effects as described above, the apparatus of the present invention can improve the reliability of the entire exposure step and at the same time improve the yield.

Claims (10)

As an exposure apparatus used for the manufacturing process of a semiconductor device; The stage means 12 on which the to-be-processed plate coated with a film for forming a semiconductor device pattern is placed; the rotating means 11 for rotating the stage means 12; and the mounting surface of the stage means 12. The formed light irradiation means 21 and moving means 22, 23, 42, 43 for reciprocating along the straight line through the center of the surface on which the light irradiation means 21 is placed; Exposure range input means 36 for inputting a desired exposure range of the target plate, exposure range storage means 35 for storing the input exposure range, and reference position detection for detecting a reference position of the target plate Means 18, relative positional relationship detecting means for detecting a relative positional relationship between the detected reference position and the light irradiation means 21, moving means 22, (corresponding to the relative position and the exposure range) ( Control means for controlling 23, 42, 43, the relative position and the exposure; And an amount of light control means for controlling the amount of light irradiated from said light irradiation means (21) to said target plate corresponding to a range. 2. An exposure apparatus according to claim 1, wherein the exposure range input means (36) has a surface sensor. An exposure apparatus according to claim 1, wherein the reference position detecting means (18) has a CCD image sensor (17). 2. An exposure apparatus according to claim 1, wherein the reference position detecting means (18) has a backlight (15). The exposure apparatus according to claim 1, wherein the light amount control means selectively controls the exposure range. 2. An exposure apparatus according to claim 1, wherein the light irradiation means (21) has an optical fiber (20). 2. An exposure apparatus according to claim 1, wherein the light irradiation means (21) has two sets of lenses (105, 106). 2. An exposure apparatus according to claim 1, wherein the light irradiation means (21) has an aperture (104). 2. An exposure apparatus according to claim 1, wherein the rotating means (11) has a stepping motor and the light irradiation means (21) and the rotating means (11) are synchronized. 2. An exposure apparatus according to claim 1, wherein the light irradiation means (21) is fixed.

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