JPS59117123A - Resist remover - Google Patents

Resist remover

Info

Publication number
JPS59117123A
JPS59117123A JP23251182A JP23251182A JPS59117123A JP S59117123 A JPS59117123 A JP S59117123A JP 23251182 A JP23251182 A JP 23251182A JP 23251182 A JP23251182 A JP 23251182A JP S59117123 A JPS59117123 A JP S59117123A
Authority
JP
Japan
Prior art keywords
wafer
resist film
porous member
resist
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23251182A
Other languages
Japanese (ja)
Inventor
Hirofumi Fukuzawa
福沢 弘文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23251182A priority Critical patent/JPS59117123A/en
Publication of JPS59117123A publication Critical patent/JPS59117123A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner

Abstract

PURPOSE:To remove a resist film on the edge of a wafer easily and avoid the insufficiency of exposure and etching defect caused by resist powder by porous member impregnated by solvent to the circumference surface of the rotating wafer. CONSTITUTION:A porous member 13 is pressed to the circumference surface of a wafer 12, on which a resist film 11 is formed, while the wafer 12 is rotated. The porous member 13 is impregnated by the solvent, which is suitable for the material of the resist film 11 and supplied by a solvent supplying tube 14, so that only the resist film wrapped in the circumference of the wafer 12 is easily removed. As a result, the resist film is prevented from touching the transfer guide or the wafer fall off protecter of a carrier and the remaining fraction of the resist film is prevented from adhering to the surface of the wafer 12.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、レゾスト除去装置に関する。[Detailed description of the invention] [Technical field of invention] TECHNICAL FIELD The present invention relates to a resist removal device.

〔発明の技術的背景〕[Technical background of the invention]

従来、ウニ・・の表面に?−)型のレジストを塗布した
後、半導体装置の生産が行われている。
Conventionally, on the surface of sea urchin...? -) After applying a type of resist, the production of semiconductor devices is carried out.

而して、ウェハの周縁部に付着した不要なレジストを除
去するため、第1図に示す如く、ウェハチャック1上に
ウェハ2を固着して所定速度で回転させながら、ウェハ
2上のレジスト膜3の周縁部に溶剤4を滴下することが
行われている。
In order to remove unnecessary resist attached to the periphery of the wafer, as shown in FIG. The solvent 4 is dripped onto the periphery of the sample 3.

〔背景技術の問題点〕[Problems with background technology]

しかしながら、回転するウェハ2の周縁部上に溶剤を滴
下すると、第2図(A)に示す如く、レジスト膜3の塗
布面積が小さくなる。このため実質上ウェハ2の径を小
さくしたのと同じ結果となシ、生産性を低下する。また
、同図(B)に示す如く、周縁部が切欠された所謂オリ
エンテーションフラット2aの近傍のレジスト膜3を除
去するのが難しい。更に、ウェハ2が偏心した状態でウ
ェハチャック2上に載置されている場合には、同図(C
)に示す如く、レジスト膜3の除去部分が片寄り、均一
な除去ができない。これらの結果、レジスト粉による露
光不足及びエツチング不良等を起こす問題があった。
However, when the solvent is dropped onto the peripheral edge of the rotating wafer 2, the area coated with the resist film 3 becomes smaller, as shown in FIG. 2(A). Therefore, the result is essentially the same as reducing the diameter of the wafer 2, and productivity is reduced. Further, as shown in FIG. 2B, it is difficult to remove the resist film 3 near the so-called orientation flat 2a whose peripheral edge is cut out. Furthermore, if the wafer 2 is placed on the wafer chuck 2 in an eccentric state,
), the removed portion of the resist film 3 is uneven and cannot be removed uniformly. As a result, there have been problems such as insufficient exposure and poor etching due to resist powder.

〔発明の目的〕[Purpose of the invention]

本発明は、ウェハのエッソ部のレゾスト膜を容易に除去
して、レノスト膜による露光不足及びエツチング不良を
防止してウェハの生産性を向上させることができるレジ
スト除去装置を提供することとその目的とするものであ
る。
SUMMARY OF THE INVENTION An object of the present invention is to provide a resist removal device that can easily remove a resist film on an esso part of a wafer, prevent insufficient exposure and etching defects caused by the resist film, and improve wafer productivity. That is.

〔発明の概要」 本発明は、回転するウェー・の周面に溶剤を含浸した多
孔質部材を幽接することによシ、ウェー・のエツジ部の
レノスト膜を容易に除去して、レノスト膜による露光不
足及びエツチング不良を防止して、ウェー・の生産性を
向上させることができるレノスト除去装置1tである。
[Summary of the Invention] The present invention provides for easily removing the Rennost film at the edge of the wafer by impregnating a porous member impregnated with a solvent on the circumferential surface of the rotating wafer. This is a renost removing apparatus 1t that can prevent insufficient exposure and etching defects and improve wafer productivity.

実施例 以下、本発明の実施例について図面を参照して説明する
Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.

”443図は、一実施例の概略構成を示す説明図である
。図中10は、レジスト膜11が塗布されたウェハ12
を固着したウェハチャックである。ウェハチャック10
は、例えば1000〜6000rpmの回転速度で回転
するようになっている。ウェー・チャック10の近傍に
は、ウェハ120局面が当接するように多孔質部材13
が垂下されている。多孔質部材13は、例えば円柱状の
ビロード部で形成されている。多孔質部材13には、溶
剤供給管14が接続されている。溶剤供給管14の側部
には、スプリング等の弾性部材15が取付けられて因る
。多孔質部材13は、この弾性部材15によシラニー・
チャック10の中心方向に押圧されている。弾性部材1
5の他端部は、エアーシリンダー16等からなる押出機
構に接続されている。
443 is an explanatory diagram showing a schematic configuration of one embodiment. In the figure, 10 indicates a wafer 12 coated with a resist film 11.
This is a wafer chuck with a fixed wafer. wafer chuck 10
is designed to rotate at a rotational speed of, for example, 1000 to 6000 rpm. A porous member 13 is placed near the wafer chuck 10 so that the surface of the wafer 120 comes into contact with it.
is hanging down. The porous member 13 is formed of, for example, a cylindrical velvet part. A solvent supply pipe 14 is connected to the porous member 13 . An elastic member 15 such as a spring is attached to the side of the solvent supply pipe 14. The porous member 13 is made of silane by this elastic member 15.
It is pressed toward the center of the chuck 10. Elastic member 1
The other end of 5 is connected to an extrusion mechanism including an air cylinder 16 and the like.

而して、このように構成されたレジスト除去装置Uによ
れば、レジストM 11の形成されたウェハ12を20
0〜3000rpmの回転速度で回転させながら、その
周面に多孔質部材13を尚接する。多孔質部材13中に
は、レジスト膜11の材質に適した溶剤が、溶剤供給菅
14から供給されて含浸しているので、第4図(支)及
び同図(B)に示す如く、ウェー・12の周縁部に巻き
込んだし・シスト膜だけを容易に除去することができる
。しかも、多孔質部材13は、ウェー・チャックlθの
中心方向に沿って押出されているので、所Ft1Mオリ
エンテーションフラット面12aに巻き込んだレジスト
膜も完全に除去することができる。その結果、ウニ・・
12の搬送中に、搬送ガイドやキャリアのウェハ落下止
め部に、レソストj摸が接触するのを防止して、レゾス
トj1メの欠けた残シ部がウェハ12の表面に付着する
のを防止できる。このため、レノスト膜による露光不足
及びエツチング不良を防止できる。
According to the resist removing apparatus U configured in this manner, the wafer 12 on which the resist M 11 is formed is removed by 20
While rotating at a rotational speed of 0 to 3000 rpm, the porous member 13 is still in contact with its peripheral surface. A solvent suitable for the material of the resist film 11 is supplied from the solvent supply tube 14 and impregnated into the porous member 13, so that the wafer is impregnated as shown in FIG.・Only the cyst film can be easily removed. In addition, since the porous member 13 is extruded along the center direction of the wafer chuck lθ, it is possible to completely remove the resist film wrapped around the Ft1M orientation flat surface 12a. As a result, sea urchin...
During the transportation of the wafer 12, the wafer 12 can be prevented from coming into contact with the wafer fall prevention part of the transport guide or carrier, and the chipped remaining part of the wafer 12 can be prevented from adhering to the surface of the wafer 12. . Therefore, insufficient exposure and etching defects due to the Lennost film can be prevented.

しかも、ウェー・・12の周面部に巻き込んだレジスト
膜だけを完全に除去できるので、レジスト膜11の塗布
され7’Cウエノ・12の有効径を大きくすることがで
きる。その結果、レソスト嗅11の塗布されたウェー・
12の生1S件を向上をせることができる。
Furthermore, since only the resist film wrapped around the peripheral surface of the wafer 12 can be completely removed, the effective diameter of the 7'C wafer 12 coated with the resist film 11 can be increased. As a result, the wafer coated with Lesost Sniff 11
You can improve 12 raw 1S items.

〔発明の効果〕〔Effect of the invention〕

以上説明した如く、本発明に係るレジスト除去装置によ
れば、ウェハのエツジ部のレジスト膜を容易に除去して
、レノスト膜による露光不足及びエツチング不良を防止
してウェハの生産性を向上させることができる等顕著な
効果を奏するものである。
As explained above, the resist removal apparatus according to the present invention can easily remove the resist film on the edge portion of the wafer, prevent insufficient exposure and etching defects due to the Renost film, and improve wafer productivity. This has remarkable effects, such as the ability to

【図面の簡単な説明】[Brief explanation of drawings]

つ、1は、つ、2兄ツえ、オケ布し、い、状態を示す説
明図、第2図(4)乃至同図(C)は、従来の手段によ
って周面のレジストを除去したウェー・の状態を示す説
明図、第3図は、本発明の一実施例の概略構成を示す説
明図、第4図(支)及び同図(B)は、同実施例のレジ
スト除去装置にて周面のレノストを除去したウニノ・の
状態を示す説明図である。 10・・・ウェハチャック、11・・・レノスト膜、1
2・・・ウェー・、13・・・多孔質部材、14・・・
溶剤供給管、15・・・弾性部材、16・・・エアーシ
リンダー、U・・・レジスト塗布装置。 出願人代理人  弁理士 鈴 江 武 彦第1図 第 2 図 第3図 第 4 図 (B)と=ビ→ 2 1
Figure 2 (4) to Figure 2 (C) are explanatory diagrams showing the state of the wafer after the resist on the peripheral surface has been removed by conventional means. 3 is an explanatory diagram showing the schematic configuration of one embodiment of the present invention, and FIG. 4 (support) and FIG. It is an explanatory view showing the state of the sea urchin from which the lenost on the peripheral surface has been removed. 10... Wafer chuck, 11... Renost film, 1
2...way, 13...porous member, 14...
Solvent supply pipe, 15...Elastic member, 16...Air cylinder, U...Resist coating device. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2 Figure 3 Figure 4 (B) and = B → 2 1

Claims (1)

【特許請求の範囲】[Claims] 先端部にウェー・固着面を有して回転自在に立設された
ウェハチャックと、該ウェハチャックの近傍に前記ウェ
ー・の周面が描接するように設けられた多孔質部材と、
該多孔質部材に接続された溶剤供給管と、前記多孔質部
材を前記ウェー・チャックの中心部に向って押出しする
ように該溶剤供給管に取付けられた弾性部材とを具備す
ることを特徴とするレジスト除去装置。
a wafer chuck that has a wafer fixing surface at its tip and is rotatably installed; a porous member that is provided near the wafer chuck so that the circumferential surface of the wafer is in contact with the wafer chuck;
It is characterized by comprising a solvent supply pipe connected to the porous member, and an elastic member attached to the solvent supply pipe so as to extrude the porous member toward the center of the wafer chuck. resist removal equipment.
JP23251182A 1982-12-23 1982-12-23 Resist remover Pending JPS59117123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23251182A JPS59117123A (en) 1982-12-23 1982-12-23 Resist remover

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23251182A JPS59117123A (en) 1982-12-23 1982-12-23 Resist remover

Publications (1)

Publication Number Publication Date
JPS59117123A true JPS59117123A (en) 1984-07-06

Family

ID=16940474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23251182A Pending JPS59117123A (en) 1982-12-23 1982-12-23 Resist remover

Country Status (1)

Country Link
JP (1) JPS59117123A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61188934A (en) * 1985-02-15 1986-08-22 Sharp Corp Method for preventing change of focusing point of projection aligner in photo etching
JPS63291422A (en) * 1987-05-25 1988-11-29 Tokyo Electron Ltd Ashing
US4897369A (en) * 1987-06-29 1990-01-30 SGS-Thompson Microelectronics S.p.A. Method for shaping the edges of slices of semiconductor material
US5028955A (en) * 1989-02-16 1991-07-02 Tokyo Electron Limited Exposure apparatus
KR100374634B1 (en) * 2000-09-25 2003-03-04 삼성전자주식회사 Removal apparatus of photoresist on an edge part of a semiconductor wafer
JP2006332185A (en) * 2005-05-24 2006-12-07 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61188934A (en) * 1985-02-15 1986-08-22 Sharp Corp Method for preventing change of focusing point of projection aligner in photo etching
JPH031823B2 (en) * 1985-02-15 1991-01-11 Sharp Kk
JPS63291422A (en) * 1987-05-25 1988-11-29 Tokyo Electron Ltd Ashing
US4897369A (en) * 1987-06-29 1990-01-30 SGS-Thompson Microelectronics S.p.A. Method for shaping the edges of slices of semiconductor material
US5028955A (en) * 1989-02-16 1991-07-02 Tokyo Electron Limited Exposure apparatus
KR100374634B1 (en) * 2000-09-25 2003-03-04 삼성전자주식회사 Removal apparatus of photoresist on an edge part of a semiconductor wafer
JP2006332185A (en) * 2005-05-24 2006-12-07 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method

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