JPS60137017A - Resist applicator - Google Patents
Resist applicatorInfo
- Publication number
- JPS60137017A JPS60137017A JP25138983A JP25138983A JPS60137017A JP S60137017 A JPS60137017 A JP S60137017A JP 25138983 A JP25138983 A JP 25138983A JP 25138983 A JP25138983 A JP 25138983A JP S60137017 A JPS60137017 A JP S60137017A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- nozzle
- solvent
- semiconductor wafer
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体装置の一製造工程である写真食刻工程中
において、半導体ウェーハにレジストを塗布するレジス
ト塗布装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a resist coating apparatus for coating a semiconductor wafer with a resist during a photolithography process which is one of the manufacturing processes of semiconductor devices.
従来のレジスト塗布装置を第１図（ａ） 、 （ｂ）に
示す。A conventional resist coating apparatus is shown in FIGS. 1(a) and 1(b).
半導体ウェーハ１を吸着する真空チャック２はコータカ
ップ３内に設けられている。レジストはレジストノズル
４から滴下される。半導体ウェーハ１にレジストを塗布
するには次のようにする。真空チャック２で半導体ウェ
ーハ１を吸着し、この半導体ウェーハｌの中心にレジス
トノズル４よりレジストを滴下する。その後真空チャッ
ク２を高速回転させ、半導体ウェーハ１上にレジストを
拡散塗布する。A vacuum chuck 2 for sucking a semiconductor wafer 1 is provided within a coater cup 3. The resist is dropped from the resist nozzle 4. A resist is applied to the semiconductor wafer 1 in the following manner. A semiconductor wafer 1 is attracted by a vacuum chuck 2, and a resist is dropped from a resist nozzle 4 onto the center of the semiconductor wafer 1. Thereafter, the vacuum chuck 2 is rotated at high speed to spread and coat the resist onto the semiconductor wafer 1.
レジストを塗布しない間はｉ４１図（ｂ）に示すように
レジストノズル４をコータカップ３の喘ｉこ移動させ待
機する。待機時間が短い間はよいが、待機時間が長くな
るとレジストノズル４の先端にあるレジストからレジス
ト溶剤が蒸発して固まり、次にレジストを滴下させる時
この固まりも一摺ζこ滴下されるため、塗布むらが生ジ
′るという問題があった。While the resist is not being applied, the resist nozzle 4 is moved in the direction of the coater cup 3 and the resist nozzle 4 is on standby as shown in FIG. It is fine as long as the waiting time is short, but if the waiting time becomes long, the resist solvent evaporates from the resist at the tip of the resist nozzle 4 and solidifies, and the next time the resist is dropped, this solidified mass is also dropped one stroke. There was a problem that uneven coating occurred.
本発明は上記事情を考慮してなされたもので塗布むらを
生ずることのないレジスト塗布装置を提供することを目
的とする。The present invention has been made in consideration of the above circumstances, and an object of the present invention is to provide a resist coating apparatus that does not cause uneven coating.
この目的を達成するために本発明によるレジスト塗布装
置は、レジストノズルにレジスト溶剤を注ぎかけるレジ
スト溶剤ノズルを備え、レジストを塗布しない間は所定
の時間毎にレジストノズルをこのレジスト溶剤ノズルに
より洗浄することを特徴とする。To achieve this objective, the resist coating device according to the present invention includes a resist solvent nozzle that pours resist solvent onto the resist nozzle, and cleans the resist nozzle with the resist solvent nozzle at predetermined intervals while resist is not being coated. It is characterized by
本発明の一実施例によるレジスト塗布装置を第２図（ａ
） 、 （時に示す。コータカップ３内−こ半導体つ工
−ハ１を吸着する真空チャック２が設けられている。レ
ジストを滴下するためにレジストノズル４が設けられて
いる。このレジストノズル４の先端近くｌこ、レジスト
溶剤を噴出させるレジスト溶剤ノズルＩＯが設けられて
いることに特徴がある。A resist coating apparatus according to an embodiment of the present invention is shown in FIG.
), (Sometimes shown. Inside the coater cup 3, a vacuum chuck 2 for sucking the semiconductor component 1 is provided. A resist nozzle 4 is provided for dropping the resist. A feature is that a resist solvent nozzle IO is provided near the tip to spray resist solvent.
レジストおよびレジスト溶剤としては例えばｒＯＦＰ几
８００Ｊ（商品名）、ｒＯＦＰＲシンナＪ（商品名）が
ある。Examples of resists and resist solvents include rOFP 800J (trade name) and rOFPR Thinner J (trade name).
このレジスト塗布装置によりレジストを塗布するのは従
来と同様である。真空チャック２で半導体ウェーハ１を
真空吸青し、この半導体ウェーハ１の中心にレジストノ
ズル４よりレジストを滴下する。その後、真空チャック
を高速回転さす、半導体ウェーハ１上にレジストを拡散
塗布する−０このレジスト塗布装置はレジストを塗布ず
べぐ待機している間の動作に特徴がある。待機している
間はレジストノズル４とレジストノズル１０をコータカ
ップ３の端に移動させておく。このとき一定時間ごとに
レジスト溶剤ノズル１０からレジスト溶剤を、レジスト
ノズル４の先端に注ぎかける。レジストとレジスト溶剤
はコータカップ３を経てダクトに排出される。レジスト
ノズル４の先端を洗浄することにより、レジストの固化
を防止できる。Coating a resist using this resist coating device is the same as in the conventional method. A semiconductor wafer 1 is subjected to vacuum absorption using a vacuum chuck 2, and a resist is dropped onto the center of the semiconductor wafer 1 from a resist nozzle 4. Thereafter, the vacuum chuck is rotated at high speed to spread and coat the resist onto the semiconductor wafer 1. This resist coating apparatus is characterized by its operation while waiting for the resist to be coated. While waiting, the resist nozzle 4 and the resist nozzle 10 are moved to the end of the coater cup 3. At this time, resist solvent is poured from the resist solvent nozzle 10 onto the tip of the resist nozzle 4 at regular intervals. The resist and resist solvent are discharged into the duct via the coater cup 3. By cleaning the tip of the resist nozzle 4, solidification of the resist can be prevented.
レジスト溶剤を注ぎかける間隙は、種々の条件により定
められるが、１Ｏ分間隔程度が１ましい。The gap in which the resist solvent is poured is determined depending on various conditions, but it is preferably about 10 minutes apart.
このように本実施例によれば、レジストノズル４の先端
にあるレジストの同化を防止できるため、長時間待機し
た後に塗布しても、塗布むらを生ずることが少ない。As described above, according to this embodiment, since assimilation of the resist at the tip of the resist nozzle 4 can be prevented, uneven coating is less likely to occur even if the resist is coated after waiting for a long time.
なお先の実輸例では感光性のフォトレジストであったが
、肋のレジスト、■えば１ｖ子ｉｉＬ’シスト、Ｘ腺し
ジスト、イオン線レジストでもよい。In the above practical example, a photosensitive photoresist was used, but rib resists, such as 1V iiL' cyst, X-ray cyst, and ion beam resist may also be used.
またレジスト溶剤ノズル１ｏは′コータカップ３の端部
に常に固定されていて、待機時にレジストノズル４だけ
が１多動するようにしてもよい。Alternatively, the resist solvent nozzle 1o may always be fixed to the end of the coater cup 3, and only the resist nozzle 4 may move one time during standby.
μ上の通り本発明によれば、長時間待機後の塗布でも塗
布むらを生ずることなく均一なレジスト膜を半導体ウェ
ーハ上に形成できる。例えば５時間待機した後にレジス
トを塗布した場倉、従来は８０チ以上の確率で塗布むら
が発生したが、本発明によれば１０９６以下の塗布むら
しか発生しない。As mentioned above, according to the present invention, a uniform resist film can be formed on a semiconductor wafer without causing uneven coating even after coating after a long waiting period. For example, when resist is applied after waiting for 5 hours, conventionally coating unevenness occurs at a probability of 80 or more, but according to the present invention, coating unevenness occurs only at 1096 or less.
第１図（ａ） 、 （ｂ）は従来のレジスト塗布装置の
断面図、第２図（ａ） 、 （ｂ）は本発明の一実施）
９１によるレジスト塗布装置の断面図である。
１・・・半導体ウェ゛−ハ、２・・・真空チャック、３
・・・コータカップ、４・・・レジストノズル、 １０
・・レジスト溶剤ノズル。
出願入代１人 猪 股 清(Figures 1(a) and (b) are cross-sectional views of a conventional resist coating device, and Figures 2(a) and (b) are one embodiment of the present invention)
91 is a cross-sectional view of a resist coating device according to FIG. 1... Semiconductor wafer, 2... Vacuum chuck, 3
... coater cup, 4 ... resist nozzle, 10
...Resist solvent nozzle. 1 applicant: Kiyoshi Inomata
Claims (1)
ーハ上にレジストを滴下するレジストノズル吉、前記吸
着手段を回転させる回転手段とを備え、半導体ウェーハ
上置滴下されたレジストを拡散塗布するレジスト冷血装
置において、前記レジストノズルの先端にレジスト溶剤
を注ぎかけるレジスト溶剤ノズルを備え、レジストを塗
布しない間は所定の時間毎に前記レジスト溶剤ノズルに
より前記レジストノズルを洗浄することを特徴とするレ
ジスト塗布装置。A resist cold-blooded apparatus for diffusing and coating resist dropped onto a semiconductor wafer, comprising a suction means for suctioning a semiconductor wafer, a resist nozzle for dropping resist onto the semiconductor wafer, and a rotating means for rotating the suction means. , a resist coating device comprising a resist solvent nozzle for pouring a resist solvent onto the tip of the resist nozzle, and cleaning the resist nozzle with the resist solvent nozzle at predetermined intervals while the resist is not being coated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25138983A JPS60137017A (en) | 1983-12-26 | 1983-12-26 | Resist applicator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25138983A JPS60137017A (en) | 1983-12-26 | 1983-12-26 | Resist applicator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60137017A true JPS60137017A (en) | 1985-07-20 |
Family
ID=17222109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25138983A Pending JPS60137017A (en) | 1983-12-26 | 1983-12-26 | Resist applicator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60137017A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016207837A (en) * | 2015-04-22 | 2016-12-08 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus |
-
1983
- 1983-12-26 JP JP25138983A patent/JPS60137017A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016207837A (en) * | 2015-04-22 | 2016-12-08 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4886728A (en) | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates | |
| JPS60137017A (en) | Resist applicator | |
| JPH1092734A (en) | Method for applying resist material | |
| JPS5941300B2 (en) | Development processing equipment | |
| JPH03209715A (en) | Resist developing method | |
| JPS61207019A (en) | Rotary coating device | |
| JP2537611B2 (en) | Coating material coating equipment | |
| JPS62190838A (en) | Resist coating method | |
| JPS60110118A (en) | Method and apparatus for coating resist | |
| JPH03256321A (en) | Resist film forming apparatus | |
| JPS61294822A (en) | Semiconductor manufacturing equipment | |
| KR970017949A (en) | Coating method of photoresist film and photoresist coating device used therefor | |
| JPS63134076A (en) | Method and device for coating | |
| JPS58184725A (en) | Resist applying apparatus for semiconductor substrate | |
| JPH0575110B2 (en) | ||
| KR100824868B1 (en) | Coating apparatus and method of photoresist | |
| JPS62286225A (en) | Semiconductor manufacturing equipment | |
| KR100272521B1 (en) | Photoresist coating method of semiconductor device | |
| JPH03262563A (en) | Coating apparatus | |
| JPS58170565A (en) | Application of resist | |
| JPS6386433A (en) | Photoresist coating method | |
| JPS59168639A (en) | Applying device for resist material | |
| JPS60144735A (en) | Forming method of photoresist film | |
| JPH0213955A (en) | Photoetching method | |
| JPS63169727A (en) | Applicator |