JPH053153A - Exposing device for unnecessary resist on wafer - Google Patents

Exposing device for unnecessary resist on wafer

Info

Publication number
JPH053153A
JPH053153A JP3177696A JP17769691A JPH053153A JP H053153 A JPH053153 A JP H053153A JP 3177696 A JP3177696 A JP 3177696A JP 17769691 A JP17769691 A JP 17769691A JP H053153 A JPH053153 A JP H053153A
Authority
JP
Japan
Prior art keywords
wafer
peripheral edge
exposure
detecting
start state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3177696A
Other languages
Japanese (ja)
Inventor
Yoneta Tanaka
米太 田中
Shinetsu Miura
真悦 三浦
Hiroko Suzuki
裕子 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP3177696A priority Critical patent/JPH053153A/en
Publication of JPH053153A publication Critical patent/JPH053153A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a device capable of performing a desired exposure on a wafer even if the wafer is arranged in any direction by a method wherein the device is provided with a rotating means, a peripheral edge detecting means, a driving means, a placement state detecting means, an exposure start state setting means, an exposure start state verifying means, a light radiation means, an exposure region setting means and the like, which are respectively specified. CONSTITUTION:The title device is provided with a rotating means 1 provided with a rotating stand 2 to be placed with a wafer W, a peripheral edge detecting sensor 3 for detecting the peripheral edge WA of the wafer W which is rotated, a peripheral edge detecting sensor driving means 4 to move the sensor 3 in such a way that the sensor 3 is always positioned on the peripheral edge WA of the wafer W and a placement state detecting means 5 for detecting the placed state of the wafer W by the movement of the sensor 3. Moreover, the device is provided with an exposure start state setting means 6 for positioning the wafer W to a prescribed direction, an exposure start state verifying means 10 for verifying the position subsequent to the movement of the wafer W to the prescribed direction, a light radiation means 7, an exposure region setting means 8 and a moving means 9 for moving the means 7 while the means 7 is controlled.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ウエハ上の不要レジス
トを現像工程で除去するために必要とされる不要レジス
ト露光装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an unnecessary resist exposure apparatus required for removing an unnecessary resist on a wafer in a developing process.

【0002】[0002]

【従来技術】例えばIC、LSI等の製造工程において
は、シリコンウエハ等の半導体ウエハの表面にレジスト
を塗布し、次いで回路パターンを露光し、これを現像し
て、レジストパターンを形成することが行われている。
レジストの塗布は、通常、ウエハ表面の中心位置にレジ
ストを注ぎながらウエハを回転させ、遠心力によってウ
エハの全表面にレジストを塗布するスピンコート法が用
いられている。従って、ウエハの周辺部にもレジストが
塗布されることになる。
2. Description of the Related Art In the manufacturing process of ICs, LSIs, etc., for example, a resist is applied to the surface of a semiconductor wafer such as a silicon wafer, then a circuit pattern is exposed, and this is developed to form a resist pattern. It is being appreciated.
The resist is usually applied by a spin coating method in which the wafer is rotated while pouring the resist on the central position of the wafer surface and the resist is applied to the entire surface of the wafer by centrifugal force. Therefore, the resist is also applied to the peripheral portion of the wafer.

【0003】しかし、ウエハの周辺部はパターン形成領
域としてあまり利用されることはない。これは、ウエハ
が種種の処理工程に付される際に、その周辺部を利用し
て搬送、保持されることが多く、また周辺部ではパター
ンの歪みが生じやすく歩留りが悪いからである。従っ
て、レジストがポジ型レジストである場合には、周辺部
が露光されないため現像後も周辺部にレジストが残留
し、このレジストがウエハの搬送、保持の際に周辺機器
を汚染し、ひいてはウエハ表面の汚染となり、歩留りの
低下を招く原因となっいた。そこで、最近では周辺部の
不要レジストを現像工程で除去するために、パターン形
成領域における回路パターンの露光工程とは別に、周辺
部の不要レジストを露光する、所謂周辺露光が行われて
いる。この周辺露光は、光ファイバにより導かれた光を
スポット的に周辺部に照射するものである。
However, the peripheral portion of the wafer is rarely used as a pattern formation area. This is because when a wafer is subjected to various kinds of processing steps, it is often transported and held by utilizing the peripheral portion of the wafer, and pattern distortion easily occurs in the peripheral portion, resulting in poor yield. Therefore, when the resist is a positive type resist, the peripheral portion is not exposed, and therefore the resist remains in the peripheral portion even after development, and this resist contaminates peripheral equipment during the transportation and holding of the wafer, and thus the wafer surface. This was a cause of contamination, which caused a decrease in yield. Therefore, recently, in order to remove the unnecessary resist in the peripheral portion in the developing step, so-called peripheral exposure is performed in which the unnecessary resist in the peripheral portion is exposed separately from the exposure step of the circuit pattern in the pattern formation region. In this peripheral exposure, the light guided by the optical fiber is applied to the peripheral portion in a spot-like manner.

【0004】また一方、最近においては、逐次移動型縮
小投影露光装置(ステッパー)によってウエハの表面は
基盤の目のように区画されて逐次露光されることが多
い。この場合には、正しく1チップ分の回路パターンを
露光できない周辺部分の形状は、階段状になってしま
い、その大きさ、形状も露光する毎に様々に変化する。
また、ウエハには、通常結晶の方向を示すオリエンテー
ションフラット(以下、単にオリフラという)と称され
る直線状の周縁部分が設けられているため完全な円形で
はない。このような事情に基づき、ウエハ周辺部の不要
レジストを階段状に露光するときには、露光を開始する
以前に、回転台の上にウエハがどのような状態で載置し
ているかを検出する必要がある。特にオリフラ等の特異
点がどの位置にあるかがわからないと、階段状に露光す
るときの基準点がわからなくなってしまう。このような
回転台での特異点の方向を検出する方法として、例えば
特願平2─243491がある。
On the other hand, in recent years, the surface of a wafer is often divided by a successive movement type reduction projection exposure apparatus (stepper) like a substrate and subjected to successive exposure. In this case, the shape of the peripheral portion where the circuit pattern for one chip cannot be correctly exposed becomes a stepped shape, and its size and shape change variously every time it is exposed.
Further, since the wafer is provided with a linear peripheral portion called an orientation flat (hereinafter, simply referred to as an orientation flat) which usually indicates a crystal direction, it is not a perfect circle. Under these circumstances, when exposing the unnecessary resist around the wafer in a stepwise manner, it is necessary to detect how the wafer is mounted on the rotary table before the exposure is started. is there. In particular, if the position of a singular point such as orientation flat is not known, the reference point for stepwise exposure becomes unknown. As a method of detecting the direction of a singular point on such a turntable, there is, for example, Japanese Patent Application No. 2-243491.

【0005】図4を用いて、特異点としてオリフラを検
出する方法を説明する。1はウエハの回転手段であり、
モータを内蔵して、周縁WAを有して表面にレジストが
塗布されたウエハWが載置される回転台2を備えてい
る。3は周縁検出センサであり、回転するウエハWの周
縁WAを検出するものである。この周縁検出センサ3
は、発光器と受光器とを備えて、受光器が検出する発光
器からの光量によって、常に周縁に位置するように矢印
Aの方向に移動する。この制御は例えば比較器を使っ
て、基準の光量に対してフィードバック制御するもので
ある。4は周縁検出センサ駆動手段であり、図示略であ
るがサーボモータ等よりなる。5は載置状態検出手段で
あり、周縁検出センサー3の移動によって、ウエハWの
回転台2での載置状態を検出するものである。この載置
状態検出手段5には、位置検出手段と、回転角度読取手
段と、記憶手段とを備えている。
A method of detecting an orientation flat as a singular point will be described with reference to FIG. 1 is a wafer rotating means,
A rotary table 2 having a built-in motor and having a peripheral edge WA and on which a wafer W having a surface coated with a resist is mounted is provided. Reference numeral 3 denotes a peripheral edge detection sensor, which detects the peripheral edge WA of the rotating wafer W. This peripheral detection sensor 3
Is provided with a light emitter and a light receiver, and moves in the direction of arrow A so as to be always located at the peripheral edge according to the amount of light from the light emitter detected by the light receiver. This control is, for example, using a comparator to perform feedback control with respect to the reference light amount. Reference numeral 4 denotes a peripheral edge detection sensor driving means, which is composed of a servo motor or the like, although not shown. Reference numeral 5 denotes a mounting state detecting means, which detects the mounting state of the wafer W on the rotary table 2 by moving the peripheral edge detection sensor 3. The mounting state detection means 5 includes a position detection means, a rotation angle reading means, and a storage means.

【0006】位置検出手段では、周縁検出センサー3が
どの程度矢印Aの方向に移動したかを検出して、さらに
はそのときのウエハWの回転角度を回転角度読取手段に
よって検出して、これらの情報を記憶手段に蓄積するこ
とによって、周辺の全ての位置の情報を記憶することが
できる。とくに、オリフラWFにおいては、周縁検出セ
ンサー3の移動は大きいので容易に検出することができ
る。そして、ウエハWを1周回転させた後に、露光開始
状態設定手段6によってオリフラWFが所定の基準位置
に位置するようにウエハWを回転させて、その状態をウ
エハWの周辺露光工程の初期開始状態として、その後図
示略の光ファイバーによって、周辺部の不要レジストを
階段状に露光していくことができる。このような構成に
よって、たとえ、ウエハがどのような向きに配置されて
も(オリフラの位置がどこにあっても)所望の階段状の
露光を達成することができる。
The position detecting means detects how much the peripheral edge detecting sensor 3 has moved in the direction of the arrow A, and the rotation angle reading means detects the rotation angle of the wafer W at that time. By accumulating the information in the storage means, it is possible to store the information of all the peripheral positions. Particularly, in the orientation flat WF, the movement of the peripheral edge detection sensor 3 is large, so that it can be easily detected. Then, after the wafer W is rotated once, the exposure start state setting means 6 rotates the wafer W so that the orientation flat WF is positioned at a predetermined reference position, and the state is initially started in the peripheral exposure process of the wafer W. After that, the unnecessary resist in the peripheral portion can be exposed stepwise by an optical fiber (not shown). With such a configuration, a desired stepwise exposure can be achieved regardless of the orientation of the wafer (wherever the orientation flat is located).

【0007】[0007]

【発明が解決しようとする課題】このように、従来の不
要レジストの露光技術は、周縁検出センサーをウエハの
半径方向に移動させながら、ウエハの周縁を検出してい
た。この時の記憶手段に蓄積された周縁検出センサー3
の位置情報と回転角度情報との関係を図5に示す。横軸
はウエハWの回転角度であり、縦軸は周縁検出センサ3
の位置の変位量である。図5に示すように、変位量が大
きく+側と−側に変化している領域Fは、周縁検出セン
サー3がオリフラWFを検出している角度範囲である。
さらに領域F内で変位量が0になっている点Θ0 は、オ
リフラWFの検出時において周縁検出センサ3が最も回
転中心側に寄っている状態を示す。ところが、図5に示
すように、変位量の変化には常に鋸状の誤差を含んでい
る。これは受光器の検出量によって、周縁検出センサ駆
動手段4が追従して制御し、周縁検出センサ3を動かす
わけであるが、発光器と受光器を有するアームの先端
は、常に微小に振動しているためにである。このため、
記憶手段に記憶された情報によって、露光開始状態設定
手段6が働き、ウエハWを初期開始状態に回転させる時
に、上記誤差が影響して、若干ずれた状態で位置設定さ
れてしまう。このような状態で周縁部の段階状の露光を
行うと、所望の露光が行われないことになってしまう。
本発明は以上のような問題点を解決することを目的とす
る。
As described above, in the conventional unnecessary resist exposure technique, the peripheral edge of the wafer is detected while moving the peripheral edge detection sensor in the radial direction of the wafer. Edge detection sensor 3 accumulated in the storage means at this time
FIG. 5 shows the relationship between the position information and the rotation angle information. The horizontal axis is the rotation angle of the wafer W, and the vertical axis is the peripheral edge detection sensor 3
Is the amount of displacement of the position. As shown in FIG. 5, a region F in which the displacement amount is largely changed between the + side and the − side is an angular range in which the peripheral edge detection sensor 3 detects the orientation flat WF.
Further, a point Θ 0 where the displacement amount is 0 in the region F indicates a state in which the peripheral edge detection sensor 3 is closest to the rotation center side when the orientation flat WF is detected. However, as shown in FIG. 5, the change in the displacement amount always includes a sawtooth error. This is because the peripheral edge detection sensor driving means 4 follows and controls the peripheral edge detection sensor 3 according to the detection amount of the light receiver to move the peripheral edge detection sensor 3, but the tip of the arm having the light emitter and the light receiver always vibrates slightly. Is because For this reason,
The information stored in the storage means causes the exposure start state setting means 6 to operate, and when the wafer W is rotated to the initial start state, the above-described error influences the position setting with a slight deviation. If stepwise exposure of the peripheral portion is performed in such a state, desired exposure will not be performed.
The present invention aims to solve the above problems.

【0008】[0008]

【課題を解決するための手段】上記の課題を解決するた
めに、本発明のウエハ上の不要レジスト露光装置は、周
縁にオリフラ等の特異点を有し、表面にレジストが塗布
されたウエハが載置される回転台を備えたウエハ回転手
段と、回転するウエハの周縁を検出する周縁検出センサ
と、周縁検出センサをウエハの周縁に常に位置するよう
にウエハ回転手段の回転の半径方向に移動させる周縁検
出センサ駆動手段と、周縁検出センサの半径方向の移動
によって、ウエハの回転台での載置状態を検出する載置
状態検出手段と、載置状態検出手段の信号を受けて、ウ
エハを特異点を基準とした所定の向きに位置設定する露
光開始状態設定手段と、露光開始状態設定手段によっ
て、所定の向きにウエハが移動されたあと、その位置を
確認する露光開始状態確認手段と、ウエハ上のレジスト
の表面をスポット的に露光する光照射手段と、レジスト
の露光すべき領域を予め設定する露光領域設定手段と、
ウエハの表面上において光照射手段を移動制御する移動
手段とよりなることを特徴とする。
In order to solve the above-mentioned problems, an unnecessary resist exposure apparatus for a wafer according to the present invention is a wafer having a singular point such as an orientation flat on the periphery and a wafer whose surface is coated with a resist. Wafer rotating means having a rotating table mounted thereon, a peripheral edge detecting sensor for detecting a peripheral edge of a rotating wafer, and a peripheral edge detecting sensor moved in a radial direction of rotation of the wafer rotating means so as to be always located on the peripheral edge of the wafer. The edge detection sensor driving means for causing the wafer to move, and the placement state detection means for detecting the placement state of the wafer on the rotary table by the radial movement of the edge detection sensor, and the signal from the placement state detection means to receive the wafer. An exposure start state setting means for setting a position in a predetermined direction with a singular point as a reference, and an exposure start state for confirming the position after the wafer is moved in a predetermined direction by the exposure start state setting means. And confirmation means, a light irradiating means for exposing the surface of the resist on the wafer in the spot, the exposure area setting means for presetting the area to be exposed in the resist,
It is characterized by comprising moving means for controlling the movement of the light irradiation means on the surface of the wafer.

【0009】[0009]

【作用】本発明のウエハ上の不要レジスト露光装置は、
載置状態検出手段によって、ウエハの露光開始状態の位
置ズレを生じても、露光開始状態確認手段によって補正
することができる。
The unnecessary resist exposure apparatus on the wafer of the present invention is
Even if the placement state detection means causes a positional deviation of the exposure start state of the wafer, it can be corrected by the exposure start state confirmation means.

【0010】[0010]

【実施例】以下、本発明を実施例によって説明する。図
1は、本発明のウエハ上の不要レジスト露光装置の一実
施例を示すものである。図4と同一番号で説明済のもの
は説明を省略する。6は露光開始状態設定手段であり、
オリフラWFの位置情報を得て、ウエハWをオリフラW
Fを基準とした所定の向きに設定するものである。従っ
て、ウエハ周辺部の不要レジストに階段状の露光を行う
時は、常にオリフラを所定の位置に設定する必要があ
る。この向きにするための回転方向は、正回転でも逆回
転でもよい。7は光照射手段であり、ウエハ周辺部の不
要レジストをスポット的に露光するものである。この光
照射手段7は、図1に示すように、ランプ71と、この
ランプ71からの光を集光させて反射する楕円集光鏡7
2と、この楕円集光鏡72からの光を水平方向に反射す
る反射鏡73と、反射鏡73の出射光路に出入り可能に
配設されたシャッタ74と、反射鏡73の光を導く光フ
ァイバ75とを備えてなる。8は露光領域設定手段であ
り、レジストの露光するべき領域を予め設定するもので
あり、ICメモリ等が用いられる。9は移動手段であ
り、ウエハWの表面上において光照射手段7を移動制御
するものである。この移動手段9は、図1に示すよう
に、光照射手段7の光ファイバ75の出射端を保持する
指示アーム91と、Xテーブル92と、Yテーブル93
と、XテーブルをX方向に沿って往復移動させるステッ
ピングモータ94と、YテーブルY方向に沿って往復移
動させるステッピングモータ95とを備えている。Yテ
ーブル93に支持アーム91が取り付けられている。Y
方向は、出射端から回転台2の回転中心に向かう方向で
あり、X方向はY方向に対して直角な方向である。従っ
て、光ファイバー75の出射端は、Xテーブル92およ
びYテーブル93に移動によってウエハ周辺部を移動す
るこになる。
EXAMPLES The present invention will be described below with reference to examples. FIG. 1 shows an embodiment of an unnecessary resist exposure apparatus on a wafer according to the present invention. Description of the same reference numerals as those in FIG. 4 will be omitted. 6 is an exposure start state setting means,
Obtaining the orientation information of the orientation flat WF, the wafer W is oriented to the orientation flat W.
It is set in a predetermined direction with F as a reference. Therefore, when performing stepwise exposure on the unnecessary resist in the peripheral portion of the wafer, it is necessary to always set the orientation flat at a predetermined position. The rotation direction for this direction may be forward rotation or reverse rotation. Reference numeral 7 denotes a light irradiating means for spot-wise exposing the unnecessary resist around the wafer. As shown in FIG. 1, the light irradiation means 7 includes a lamp 71 and an elliptical focusing mirror 7 that collects and reflects the light from the lamp 71.
2, a reflecting mirror 73 that reflects the light from the elliptical focusing mirror 72 in the horizontal direction, a shutter 74 that is arranged so as to be able to enter and exit the outgoing optical path of the reflecting mirror 73, and a light that guides the light from the reflecting mirror 73. And a fiber 75. Reference numeral 8 denotes an exposure area setting means, which presets an area of the resist to be exposed, and an IC memory or the like is used. Reference numeral 9 denotes a moving means for controlling the movement of the light irradiation means 7 on the surface of the wafer W. As shown in FIG. 1, the moving means 9 has an instruction arm 91 for holding the emitting end of the optical fiber 75 of the light irradiation means 7, an X table 92, and a Y table 93.
And a stepping motor 94 for reciprocating the X table in the X direction and a stepping motor 95 for reciprocating the Y table in the Y direction. The support arm 91 is attached to the Y table 93. Y
The direction is a direction from the emitting end toward the rotation center of the turntable 2, and the X direction is a direction perpendicular to the Y direction. Therefore, the emitting end of the optical fiber 75 moves to the X table 92 and the Y table 93 to move around the wafer.

【0011】10は露光開始状態確認手段である。これ
は露光開始状態設定手段6によって、オリフラWFを所
定の方向に向けたあと、若干のずれを直すものである。
この露光開始状態確認手段10は、ウエハWに向かって
CDDを並べたものが適用される。11は、この露光開
始状態確認手段10からの検出信号を受けて、ウエハW
を回転させるために回転手段1に信号を送る演算手段で
ある。次に、この露光開始状態確認手段10による動作
を図2を用いて説明する。(a)は載置状態検出手段5
によって、ウエハWの回転台2での載置状態を検出した
後の状態を示す。この任意の位置にオリフラWFがある
状態から、露光開始状態設定手段6によって、ウエハW
をΘ1 の方向に回転させて、所定の位置に設定させる。
ところが、オリフラWFは、前述のごとく周縁検出セン
サ3の検出時における誤差によって、本来配置されるべ
き位置WF1(点線で示す状態)から少しずれた位置W
F2に配置される。この状態は(b)に示す。露光開始
状態確認手段10は、その内部にCCD等のセンサを埋
め込まれ、ウエハWの中心方向に向かって伸びる2つの
棒状の検出器10Aと10Bから構成される。そして各
々の検出器において、オリフラWFのエッヂを検出する
ことにより、演算手段11によって本来配置されるべき
位置からどの程度ずれているかが判断できる。そして、
回転手段1によって、ずれている分を補正するようにウ
エハWを再び回転させることにより、正しい位置にオリ
フラWFが配置される。この状態を(C)に示す。次に
光照射手段7である光ファイバ75がウエハW上を移動
して、ウエハWの周縁部を段階上に露光していく。
Reference numeral 10 is an exposure start state confirmation means. In this method, the exposure start state setting means 6 directs the orientation flat WF in a predetermined direction and then corrects a slight deviation.
As the exposure start state confirmation means 10, a device in which CDDs are arranged toward the wafer W is applied. The wafer 11 receives the detection signal from the exposure start state confirmation means 10 and receives the wafer W.
Is a calculating means for sending a signal to the rotating means 1 to rotate the. Next, the operation of the exposure start state confirmation means 10 will be described with reference to FIG. (A) is the mounting state detection means 5
Shows the state after the mounting state of the wafer W on the turntable 2 is detected. From the state in which the orientation flat WF is present at this arbitrary position, the wafer W is set by the exposure start state setting means 6.
Rotate in the direction of Θ 1 to set it in place.
However, the orientation flat WF is slightly displaced from the position WF1 (the state indicated by the dotted line) which should be originally arranged due to the error in the detection of the peripheral edge detection sensor 3 as described above.
It is located at F2. This state is shown in (b). The exposure start state confirmation means 10 is composed of two rod-shaped detectors 10A and 10B having a sensor such as a CCD embedded therein and extending toward the center of the wafer W. Then, by detecting the edge of the orientation flat WF in each of the detectors, it is possible to determine to what extent the calculation means 11 deviates from the position originally supposed to be arranged. And
By rotating the wafer W again by the rotating means 1 so as to correct the deviation, the orientation flat WF is arranged at the correct position. This state is shown in (C). Next, the optical fiber 75, which is the light irradiation means 7, moves on the wafer W and exposes the peripheral edge of the wafer W step by step.

【0012】次に、本発明の不要レジスト露光装置によ
る露光方法を説明する。露光領域設定手段8によりウエ
ハW上の不要レジストの露光領域を設定する。露光領域
は、図3に示すように形成領域Hに基づいて定められ
る。回転台2に載置されたウエハWを1回転させ、載置
状態検出手段5によりこのときの載置状態、特にオリフ
ラWFの位置を検出する。ウエハWを、露光開始状態設
定手段6により、オリフラWFを基準とした露光開始状
態に位置設定する。次に、露光開始状態確認手段10に
よって、オリフラWFが位置設定されたときに生じる僅
かなズレを検出して、それを補正する。次に、移動手段
9により光照射手段7の光ファイバ75の出射端を移動
させてウエハW上の不要レジストの露光を開始する。光
ファイバ75の出射端が、露光開始点である例えば図3
のa点を露光する位置にセットされたときに、ウエハW
を停止させた状態で、シャッター74を開いて、出射端
から光照射するとともに、移動手段9により光ファイバ
75の出射端を露光する位置に向けてX方向へ移動させ
て、a点からb点に沿った露光を行う。次いで、b点を
露光する位置から、移動手段9により光ファイバ75の
出射端をY方向に移動させながら、c点を露光する位置
まで、出射端から光を照射して露光を行う。さらに、c
点を露光する位置から、移動手段9により光ファイバ7
5を出射端をX方向に移動させながら、d点を露光する
位置まで、出射端から光を照射して露光を行う。
Next, an exposure method by the unnecessary resist exposure apparatus of the present invention will be described. The exposure area setting means 8 sets the exposure area of the unnecessary resist on the wafer W. The exposure area is determined based on the formation area H as shown in FIG. The wafer W mounted on the rotary table 2 is rotated once, and the mounting state detecting means 5 detects the mounting state at this time, particularly the position of the orientation flat WF. The exposure start state setting means 6 positions the wafer W in the exposure start state with reference to the orientation flat WF. Next, the exposure start state confirmation means 10 detects a slight shift that occurs when the orientation flat WF is set in position, and corrects it. Next, the moving means 9 moves the emitting end of the optical fiber 75 of the light irradiation means 7 to start the exposure of the unnecessary resist on the wafer W. The emission end of the optical fiber 75 is the exposure start point, as shown in FIG.
Of the wafer W when it is set to the position for exposing point a of
With the shutter stopped, the shutter 74 is opened to irradiate light from the emission end, and the emission end of the optical fiber 75 is moved by the moving means 9 in the X direction toward the position to be exposed, so that the point a to the point b. Exposure according to. Then, while moving the emitting end of the optical fiber 75 in the Y direction by the moving means 9 from the position where the point b is exposed, light is emitted from the emitting end to the position where the point c is exposed. Furthermore, c
From the position where the point is exposed, the optical fiber 7 is moved by the moving means 9.
While moving the emitting end 5 in the X direction, light is irradiated from the emitting end up to the position where the point d is exposed for exposure.

【0013】このようにしてd点の位置まで露光が終了
したら、パターン形成領域Hが誤って露光されることを
防止するために一旦シャッター74を閉じた状態で、ウ
エハ回転手段1により回転台2を90°回転させて、ウ
エハWを1/4回転させる。ウエハWが1/4回転した
ら、ウエハWを停止させた状態で、d点を露光する位置
から上記と同様にして階段状に露光を行う。以上のよう
にして、ウエハWを1/4回転ごとに階段状の露光を4
回行うと、ちょうどウエハWの周辺部の全周の露光が終
了することになる。
When the exposure is completed up to the position of point d in this way, the wafer rotating means 1 is used to rotate the rotary table 2 with the shutter 74 temporarily closed in order to prevent the pattern forming area H from being exposed by mistake. Is rotated by 90 ° and the wafer W is rotated by ¼. When the wafer W has rotated 1/4, the exposure is performed stepwise from the position at which point d is exposed in the same manner as above, with the wafer W stopped. As described above, the wafer W is exposed to the stepwise exposure 4 times every quarter rotation.
When it is performed once, the exposure of the entire circumference of the peripheral portion of the wafer W is finished.

【0014】次に、本発明の露光開始状態確認手段10
の他の実施例を示す。露光開始状態設定手段6によっ
て、ウエハWのオリフラWFは所定の位置に配置された
後、図6に示すように光照射手段7である光ファイバ7
5が、矢印a→b→cに示すように移動する。この時シ
ャッタ74は閉じていてウエハW上には露光を行わない
ようにしているこのとき光ファイバ75の先端には図7
に示すように、発光器61と受光器62よりなるセンサ
ーが取り付けられている。発光器61は光ファイバ75
の先端に取り付けられ、一方受光器62は支持アーム9
1に繋がる専用のアームによって、発光器61と受光器
62との関係が、ウエハWの露光面と垂直になるように
形成されている。そしてXテーブル92と、ステッピン
グモータ94と、Yテーブル93と、ステッピングモー
タ95によって、前述のごとく光ファイバの先端が矢印
a→b→cのように移動すると、発光器61と受光器6
2のよる光検出によって、オリフラWFの位置ずれを知
ることができる。詳しく説明すると、光ファイバ75の
先端が矢印aに移動するときにおける、受光器62が検
出する光量の変化する時間と、矢印cに移動するときに
おける、同じく光量が変化する時間を検出するこによっ
て、オリフラWFの位置ずれを知ることができる。その
データは演算手段11において処理されて、回転手段1
によって、所望の位置にオリフラWFを位置設定するこ
とができる。
Next, the exposure start state confirmation means 10 of the present invention.
Another embodiment will be described. After the orientation flat WF of the wafer W is arranged at a predetermined position by the exposure start state setting means 6, as shown in FIG. 6, an optical fiber 7 which is a light irradiation means 7.
5 moves as shown by arrows a → b → c. At this time, the shutter 74 is closed so that the wafer W is not exposed.
As shown in, a sensor including a light emitter 61 and a light receiver 62 is attached. The light emitter 61 is an optical fiber 75.
Of the support arm 9 while the receiver 62 is attached to the tip of the
By the dedicated arm connected to 1, the relationship between the light emitter 61 and the light receiver 62 is formed so as to be perpendicular to the exposure surface of the wafer W. When the tip of the optical fiber is moved by the X table 92, the stepping motor 94, the Y table 93, and the stepping motor 95 as described above, the light emitter 61 and the light receiver 6 are moved.
By the light detection according to 2, it is possible to know the positional deviation of the orientation flat WF. More specifically, by detecting the time when the amount of light detected by the light receiver 62 changes when the tip of the optical fiber 75 moves to the arrow a and the time when the amount of light changes when moving to the arrow c. , It is possible to know the displacement of the orientation flat WF. The data is processed by the calculation means 11 and the rotation means 1
Thus, the orientation flat WF can be set at a desired position.

【0015】尚、本実施例は、回転台に載置されたウエ
ハの載置状態を検出する手段として、ウエハ周縁におけ
るオリフラを検出することを説明したが、これはオリフ
ラにかぎるものではなく、その他周縁部に特異な形状を
有するものであれば同様に実施できる。
In the present embodiment, as a means for detecting the mounting state of the wafer mounted on the rotary table, the orientation flat at the peripheral edge of the wafer is detected, but this is not limited to the orientation flat. Any other material having a unique shape in the peripheral portion can be similarly implemented.

【0016】[0016]

【発明の効果】以上説明したように、本発明によれば、
ウエハ周辺部の不要レジストを露光するために、ウエハ
が回転台にどのような状態で載置されても、確実に露光
開始状態にウエハの向きを移動させてから露光すること
ができる。
As described above, according to the present invention,
In order to expose the unnecessary resist on the peripheral portion of the wafer, no matter what state the wafer is placed on the rotating table, it is possible to surely move the orientation of the wafer to the exposure start state before performing the exposure.

【図面の簡単な説明】[Brief description of drawings]

【図1】実施例に係る不要レジストの露光装置の概略を
示す説明図である。
FIG. 1 is an explanatory diagram showing an outline of an unnecessary resist exposure apparatus according to an embodiment.

【図2】本実施例による露光開始状態確認手段の説明図
である。
FIG. 2 is an explanatory diagram of an exposure start state confirmation means according to the present embodiment.

【図3】実施例におけるウエハのパターン形成領域の説
明図である。
FIG. 3 is an explanatory diagram of a pattern formation region of a wafer in an example.

【図4】本実施例および従来例におけるウエハの周縁検
出を示す説明図である。
FIG. 4 is an explanatory diagram showing wafer edge detection in the present embodiment and a conventional example.

【図5】実施例におけるウエハの特異点の説明図であ
る。
FIG. 5 is an explanatory diagram of singular points of a wafer in an example.

【図6】本実施例による露光開始状態確認手段の他の実
施例を示す説明図である。
FIG. 6 is an explanatory view showing another embodiment of the exposure start state confirmation means according to the present embodiment.

【図7】本実施例による露光開始状態確認手段の他の実
施例を示す説明図である。
FIG. 7 is an explanatory diagram showing another embodiment of the exposure start state confirmation means according to the present embodiment.

【符号の説明】[Explanation of symbols]

1 回転手段 2 回転台 3 周縁検出センサー 4 周縁検出センサー駆動手段 5 載置状態検出手段 6 露光開始状態設定手段 7 光照射手段 8 露光領域設定手段 9 移動手段 10 露光開始状態確認手段 11 演算手段 W ウエハ WA ウエハの周縁 WF オリフラ DESCRIPTION OF SYMBOLS 1 Rotation means 2 Rotation table 3 Edge detection sensor 4 Edge detection sensor drive means 5 Mounting state detection means 6 Exposure start state setting means 7 Light irradiation means 8 Exposure area setting means 9 Moving means 10 Exposure start state confirmation means 11 Computing means W Wafer WA Edge of wafer WF Orifla

Claims (1)

【特許請求の範囲】 【請求項1】周縁にオリフラ等の特異点を有し、表面に
レジストが塗布されたウエハが載置される回転台を備え
たウエハ回転手段と、回転するウエハの周縁を検出する
周縁検出センサと、周縁検出センサをウエハの周縁に常
に位置するようにウエハ回転手段の回転の半径方向に移
動させる周縁検出センサ駆動手段と、周縁検出センサの
半径方向の移動によって、ウエハの回転台での載置状態
を検出する載置状態検出手段と、載置状態検出手段の信
号を受けて、ウエハを特異点を基準とした所定の向きに
位置設定する露光開始状態設定手段と、露光開始状態設
定手段によって、所定の向きにウエハが移動されたあ
と、その位置を確認する露光開始状態確認手段と、ウエ
ハ上のレジストの表面をスポット的に露光する光照射手
段と、レジストの露光すべき領域を予め設定する露光領
域設定手段と、ウエハの表面上において光照射手段を移
動制御する移動手段とよりなることを特徴とするウエハ
上の不要レジスト露光装置。
Claim: What is claimed is: 1. A wafer rotating means having a rotary table having a singular point such as an orientation flat on a peripheral edge thereof, on which a wafer coated with a resist is placed, and a peripheral edge of the rotating wafer. A peripheral edge detection sensor for detecting the wafer edge, a peripheral edge detection sensor driving means for moving the peripheral edge detection sensor in the radial direction of rotation of the wafer rotating means so that the peripheral edge detection sensor is always positioned on the peripheral edge of the wafer, and a radial movement of the peripheral edge detection sensor for the wafer Mounting state detecting means for detecting the mounting state on the rotating table, and exposure start state setting means for receiving the signal from the mounting state detecting means and setting the wafer in a predetermined direction with the singular point as a reference. An exposure start state confirmation means for confirming the position of the wafer after the wafer is moved in a predetermined direction by the exposure start state setting means, and a light irradiation hand for spotwise exposing the surface of the resist on the wafer. An unnecessary resist exposure apparatus on a wafer, comprising: a step, an exposure area setting means for setting an area of the resist to be exposed in advance, and a moving means for moving and controlling the light irradiation means on the surface of the wafer.
JP3177696A 1991-06-24 1991-06-24 Exposing device for unnecessary resist on wafer Pending JPH053153A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3177696A JPH053153A (en) 1991-06-24 1991-06-24 Exposing device for unnecessary resist on wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3177696A JPH053153A (en) 1991-06-24 1991-06-24 Exposing device for unnecessary resist on wafer

Publications (1)

Publication Number Publication Date
JPH053153A true JPH053153A (en) 1993-01-08

Family

ID=16035511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3177696A Pending JPH053153A (en) 1991-06-24 1991-06-24 Exposing device for unnecessary resist on wafer

Country Status (1)

Country Link
JP (1) JPH053153A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1092711A (en) * 1996-09-10 1998-04-10 Dainippon Screen Mfg Co Ltd Marginal aligner
JPH10135106A (en) * 1996-10-28 1998-05-22 Dainippon Screen Mfg Co Ltd Rim aligner
JPH10135105A (en) * 1996-10-28 1998-05-22 Dainippon Screen Mfg Co Ltd Rim aligner
US5880816A (en) * 1995-10-02 1999-03-09 Ushiodenki Kabushiki Kaisha Process for exposing the peripheral area of a semiconductor wafer for removing unnecessary resist on the semiconductor wafer and a device for executing the process
EP1168082A2 (en) * 2000-06-22 2002-01-02 Ushiodenki Kabushiki Kaisha Device for exposure of the peripheral area of a film circuit board
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
JP2009027184A (en) * 2008-09-26 2009-02-05 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor, and semiconductor manufacturing apparatus
JP2016157841A (en) * 2015-02-25 2016-09-01 東京エレクトロン株式会社 Peripheral exposure apparatus, peripheral exposure method, program and computer storage medium

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880816A (en) * 1995-10-02 1999-03-09 Ushiodenki Kabushiki Kaisha Process for exposing the peripheral area of a semiconductor wafer for removing unnecessary resist on the semiconductor wafer and a device for executing the process
JPH1092711A (en) * 1996-09-10 1998-04-10 Dainippon Screen Mfg Co Ltd Marginal aligner
JPH10135106A (en) * 1996-10-28 1998-05-22 Dainippon Screen Mfg Co Ltd Rim aligner
JPH10135105A (en) * 1996-10-28 1998-05-22 Dainippon Screen Mfg Co Ltd Rim aligner
EP1168082A2 (en) * 2000-06-22 2002-01-02 Ushiodenki Kabushiki Kaisha Device for exposure of the peripheral area of a film circuit board
EP1168082A3 (en) * 2000-06-22 2005-05-04 Ushiodenki Kabushiki Kaisha Device for exposure of the peripheral area of a film circuit board
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
JP2009027184A (en) * 2008-09-26 2009-02-05 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor, and semiconductor manufacturing apparatus
JP4601697B2 (en) * 2008-09-26 2010-12-22 株式会社日立国際電気 Semiconductor manufacturing method and semiconductor manufacturing apparatus
JP2016157841A (en) * 2015-02-25 2016-09-01 東京エレクトロン株式会社 Peripheral exposure apparatus, peripheral exposure method, program and computer storage medium

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