KR0132640Y1 - Wafer chuck - Google Patents
Wafer chuck Download PDFInfo
- Publication number
- KR0132640Y1 KR0132640Y1 KR2019940030352U KR19940030352U KR0132640Y1 KR 0132640 Y1 KR0132640 Y1 KR 0132640Y1 KR 2019940030352 U KR2019940030352 U KR 2019940030352U KR 19940030352 U KR19940030352 U KR 19940030352U KR 0132640 Y1 KR0132640 Y1 KR 0132640Y1
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- Prior art keywords
- vacuum
- chuck
- wafer
- wafer chuck
- hole
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
본 고안은 진공홀(11)을 구비한 진공 웨이퍼 척에 있어서, 전체구조 상부에 다수의 돌출편(14)이나, 미세진공홀을 구비하는 것을 특징으로 하여, 웨이퍼에 진공이 균일하게 접촉됨으로써 최근에 일반적으로 사용하는 8인치 웨이퍼를 차징하는데도 종래의 문제점을 최소화할 수 있고, 또한 웨이퍼에 골고루 진공도가 유지됨에 따라 척의 웨이퍼 차징능력이 향상되어 약 5000rpm의 고속회전에서도 웨이퍼가 떨어지거나 척을 이탈하지 않게 되며, 수평조절부가 4개로 보강됨에 따라 척의 회전 수평도 조절이 용이해져 생상 수율을 향상시키는 효과가 있는 진공 웨이퍼 척에 관한 것이다.The present invention is characterized in that a vacuum wafer chuck having a vacuum hole 11 is provided with a plurality of protruding pieces 14 and a fine vacuum hole in the upper portion of the entire structure. The conventional problem can be minimized even when charging 8-inch wafers commonly used in the process. Also, as the vacuum level is maintained evenly on the wafer, the wafer charging ability of the chuck is improved, so that the wafer does not fall or break off even at a high speed of about 5000 rpm. As the horizontal adjustment unit is reinforced by four, it is easy to adjust the rotational level of the chuck, and relates to a vacuum wafer chuck having an effect of improving the production yield.
Description
제1a도 및 제1b도는 종래 진공 웨이퍼 척의 평면도 및 A-A선 단면도.1A and 1B are a plan view and a sectional view taken along line A-A of a conventional vacuum wafer chuck.
제2a도 및 제2b도는 본 고안에 따른 진공 웨이퍼 척의 평면도 및 단면도.2a and 2b are a plan view and a cross-sectional view of a vacuum wafer chuck according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1, 11 : 진공홀 2, 12 : 수평조절부1, 11: vacuum hole 2, 12: horizontal adjustment part
3 : 날개 13 : 진공경로3: wing 13: vacuum path
14 : 돌출편 15 : 진공가이드14: protrusion 15: vacuum guide
본 고안은 반도체 소자 제조장비중 진공력을 이용하여 웨이퍼를 고정하는 척에 관한 것으로, 특히 척상에 다수의 돌기를 구비하여 웨이퍼를 보다 안정적으로 고정할 수 있는 진공 웨이퍼 척에 관한 것이다.The present invention relates to a chuck for fixing a wafer using a vacuum force in a semiconductor device manufacturing equipment, and more particularly to a vacuum wafer chuck having a plurality of protrusions on the chuck to more stably fix the wafer.
제1a도 및 제1b도에 도시된 진공 웨이퍼 척의 평면도 및 A-A선 단면도를 참조하여 종래 기술을 살펴보면 다음과 같다.The prior art will now be described with reference to a plan view and a cross-sectional view taken along line A-A of the vacuum wafer chuck shown in FIGS. 1A and 1B.
도면에서, 1은 진공홀, 2는 수평조절부, 3은 날개를 각각 나타낸다.In the figure, 1 denotes a vacuum hole, 2 denotes a horizontal adjustment part, and 3 denotes a wing.
도면에 도시된 바와 같이 종래 진공 웨이퍼 척은 동심원 형상의 진공경로에 연통하는 하나의 진공홀(1)과, 2개의 수평조절부(2)와, 척의 회전력을 향상시키는 날개(3)가 구비되어 있다.As shown in the drawing, a conventional vacuum wafer chuck is provided with one vacuum hole 1 communicating with a concentric vacuum path, two horizontal adjusting portions 2, and a wing 3 for improving rotational force of the chuck. have.
그러나, 상기와 같은 종래의 진공 웨이퍼 척에서는 웨이퍼와 진공이 직접 접촉하는 부분이 진공홀(1) 하나에 집중되기 때문에 웨이퍼 중심부에 집중적인 진공압력이 걸려, 상기 웨이퍼의 중심부가 오목하게 휘어지는 현상이 생기게 된다. 따라서, 상기와 같은 웨이퍼 중심부의 변형은 웨이퍼에 탈이온수를 분사시켜 세척하거나, 원심력을 이용하여 건조시키는 차후 공정 수행시, 세척불량이나, 건조불량과 같은 공정불량을 유발시켜 결함을 발생시키는 문제점을 초래했다.However, in the conventional vacuum wafer chuck as described above, since the portion in which the wafer and the vacuum are in direct contact are concentrated in one vacuum hole 1, a concentrated vacuum pressure is applied to the center of the wafer so that the center of the wafer is concavely curved. Will be created. Therefore, the deformation of the center portion of the wafer may cause defects by causing process defects, such as poor washing or poor drying, in a subsequent process of spraying deionized water onto the wafer or cleaning the wafer, or drying by centrifugal force. Brought about.
또한, 척의 외주면에 장착된 날개는 휘어지기 쉽게 되어 있으며, 이는 고속회전시 웨이퍼를 진동시켜 분진을 발생시키는 원인으로 작용함으로써 생산수율을 저하시키는 문제점을 초래하고 있다.In addition, the wing mounted on the outer circumferential surface of the chuck is easy to bend, which causes the problem of lowering the production yield by acting as a cause of vibration of the wafer during high-speed rotation to generate dust.
따라서, 본 고안은 상기의 제반 문제점을 해결하기 위하여 안출된 것으로서, 척의 상면에 돌출편 또는 미세진공홀을 형성하여 웨이퍼와 진공이 직접 접촉하는 면적을 크게 하므로써 진공 흡착력에 의해 웨이퍼가 변형되는 것을 방지하기 위한 진공 웨이퍼 척을 제공함에 그 목적이 있다.Therefore, the present invention has been devised to solve the above problems, and by forming a protruding piece or a micro vacuum hole on the upper surface of the chuck to increase the area in which the wafer and the vacuum directly contact, preventing the wafer from being deformed by the vacuum suction force. It is an object of the present invention to provide a vacuum wafer chuck.
상기 목적을 달성하기 위하여 본 고안은, 진공홀이 형성된 진공 웨이퍼 척에 있어서, 상기 진공홀 둘레에 형성된 적어도 4개의 수평조절수단; 상기 수평조절수단의 둘레에서 척상의 주연까지 소정 간격으로 구비된 다수의 돌출편; 및 상기 돌출편 사이의 진공경로를 통하여 진공이 누출되는 것을 차단하도록 척상의 외주면에 형성된 진공가이드를 구비한 것을 특징으로 하는 진공 웨이퍼 척을 제공한다.In order to achieve the above object, the present invention is a vacuum wafer chuck formed with a vacuum hole, at least four horizontal adjustment means formed around the vacuum hole; A plurality of protrusions provided at predetermined intervals from the periphery of the horizontal adjusting means to the circumference of the chuck; And a vacuum guide formed on an outer circumferential surface of the chuck so as to block the leakage of the vacuum through the vacuum path between the protruding pieces.
이하, 첨부된 제2a도 및 제2b도의 도면을 참조하여 본 고안의 실시예를 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings of FIGS. 2A and 2B.
제2a도 및 제2b도는 본 고안에 따른 진공 웨이퍼 척의 평면도 및 정단면도로서, 도면에서 11은 진공홀, 12는 수평조절부, 13은 진공경로, 14는 돌출편, 15는 진공가이드를 각각 나타낸다.2a and 2b are a plan view and a cross-sectional view of the vacuum wafer chuck according to the present invention, 11 is a vacuum hole, 12 is a horizontal adjustment portion, 13 is a vacuum path, 14 is a protrusion, 15 is a vacuum guide, respectively .
도면에 도시된 바와 같이, 본 고안의 진공 웨이퍼 척은 직경이 61.6mm인 척의 중심부에 소정크기의 진공홀(11)이 형성되고, 상기 진공홀(11) 주위에 형성된 4개의 수평조절부(12)와, 상기 수평조절부(12)의 주위에서 척의 외주부까지 소정 간격마다 일률적으로 형성된 다수의 돌출편(14)이 구비된다. 본 실시예에서의 돌출편은 동심원 형상으로 100 내지 200개정도 구비된 구조로 되어 있다. 따라서, 상기 돌출편(14)이 척상에 구비됨에 따라 상기 돌출편(14) 각각의 사이는 진공홀(11)로부터 연결된 넓은 면적의 진공경로(13)가 자연히 형성된다.As shown in the figure, the vacuum wafer chuck of the present invention has a vacuum hole 11 of a predetermined size is formed in the center of the chuck having a diameter of 61.6mm, four horizontal adjustment portion 12 formed around the vacuum hole 11 And a plurality of protruding pieces 14 uniformly formed at predetermined intervals from the periphery of the horizontal adjusting part 12 to the outer peripheral part of the chuck. The projecting piece in this embodiment has a structure with about 100 to 200 concentric circles. Therefore, as the protruding pieces 14 are provided on the chuck, a vacuum path 13 having a large area naturally connected between the protruding pieces 14 from the vacuum hole 11 is naturally formed.
이때, 상기 진공경로(13)를 통하여 진공이 외부로 누출되는 것을 방지하기 위하여 상기 척의 외주면에 소정 폭을 가지고 단턱지게 형성된 진공가이드(15)를 구비한다.At this time, in order to prevent the leakage of the vacuum to the outside through the vacuum path 13 is provided with a vacuum guide 15 formed stepped with a predetermined width on the outer peripheral surface of the chuck.
상기와 같이 구성된 본 고안에서는 일반적으로 상기 척의 직경은 50mm 내지 70mm이므로, 상기 돌출편의 높이는 0.05mm 내지 1mm의 범위 이내로 한다.In the present invention configured as described above, since the diameter of the chuck is generally 50 mm to 70 mm, the height of the protruding piece is within the range of 0.05 mm to 1 mm.
본 고안에서는 척상에 동심원 형상으로 돌출편(14)을 구비한 구조로 되어 있지만, 이에 국한하는 것은 아니고, 본 고안의 다른 실시예로서 상기 돌출편(14) 대신에 척 상부에 미세진공홀을 100 내지 200개 정도 형성하도록 할 수 있으며, 이에 따라 웨이퍼와 진공간의 직접 접촉면적을 종래보다 크게할 수가 있다. 이때, 상기 미세진공홀의 간격은 15mm 내지 30mm 간격을 두고 형성되는 것이 바람직하다.Although the present invention has a structure having the protruding piece 14 in a concentric shape on the chuck, the present invention is not limited thereto, and as another embodiment of the present invention, a microvacuum hole 100 is provided in the upper part of the chuck instead of the protruding piece 14. It is possible to form up to about 200, and thus the direct contact area between the wafer and the vacuum can be made larger than before. At this time, the micro-vacuum hole is preferably formed at intervals of 15mm to 30mm.
상기와 같이 구성되는 본 고안의 동작상태를 설명하면 다음과 같다.Referring to the operating state of the subject innovation constituted as described above are as follows.
본 고안의 진공 웨이퍼 척은 척 상부에 웨이퍼를 잡아주도록 100 내지 200개의 돌출편이나 미세진공홀을 형성시켜 웨이퍼와 진공이 직접 접촉하는 면적을 크게한 구조이므로, 상기 척상에 놓여진 웨이퍼에 진공이 균일하게 접촉된다.The vacuum wafer chuck of the present invention has a structure in which 100 to 200 protruding pieces or microvacuum holes are formed to hold the wafer on the chuck to increase the area where the wafer and the vacuum directly contact, so that the vacuum is uniform on the wafer placed on the chuck. Is contacted.
따라서, 최근에 사용되는 8인치 웨이퍼를 고정하는데도, 종래의 문제점을 최소화할 수가 있고, 또한 웨이퍼에 진공도가 고르게 미치므로써 척의 웨이퍼 파지능력이 향상되어 약 500rpm의 고속 회전에서도 웨이퍼가 이탈되지 않게 되며, 수평조절부가 4개로 보강됨에 따라 척의 회전 수평도조절이 용이해져 생산 수율을 향상시키는 효과를 가진다.Therefore, even in the case of fixing 8-inch wafers used recently, the conventional problem can be minimized, and the degree of vacuum is evenly applied to the wafer, so that the wafer holding ability of the chuck is improved, so that the wafer is not released even at a high speed rotation of about 500 rpm. As the horizontal adjusting portion is reinforced with four, the level of rotation of the chuck can be easily adjusted to improve the production yield.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940030352U KR0132640Y1 (en) | 1994-11-16 | 1994-11-16 | Wafer chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940030352U KR0132640Y1 (en) | 1994-11-16 | 1994-11-16 | Wafer chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960019144U KR960019144U (en) | 1996-06-19 |
| KR0132640Y1 true KR0132640Y1 (en) | 1999-02-01 |
Family
ID=19398295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940030352U KR0132640Y1 (en) | 1994-11-16 | 1994-11-16 | Wafer chuck |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0132640Y1 (en) |
-
1994
- 1994-11-16 KR KR2019940030352U patent/KR0132640Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR960019144U (en) | 1996-06-19 |
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