KR0124143B1 - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
KR0124143B1
KR0124143B1 KR91000945A KR910000945A KR0124143B1 KR 0124143 B1 KR0124143 B1 KR 0124143B1 KR 91000945 A KR91000945 A KR 91000945A KR 910000945 A KR910000945 A KR 910000945A KR 0124143 B1 KR0124143 B1 KR 0124143B1
Authority
KR
South Korea
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR91000945A
Other languages
English (en)
Korean (ko)
Inventor
Akazawa Moriaki
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of KR0124143B1 publication Critical patent/KR0124143B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR91000945A 1990-02-01 1991-01-21 Semiconductor memory device Expired - Fee Related KR0124143B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023898A JP2572864B2 (ja) 1990-02-01 1990-02-01 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR0124143B1 true KR0124143B1 (en) 1997-11-25

Family

ID=12123279

Family Applications (1)

Application Number Title Priority Date Filing Date
KR91000945A Expired - Fee Related KR0124143B1 (en) 1990-02-01 1991-01-21 Semiconductor memory device

Country Status (3)

Country Link
JP (1) JP2572864B2 (https=)
KR (1) KR0124143B1 (https=)
DE (1) DE4103105A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW399287B (en) * 1998-12-19 2000-07-21 Siemens Plc Structure of bottle-shaped deep trench and its manufacturing method
RU2169207C2 (ru) * 1999-04-09 2001-06-20 Московский государственный институт электроники и математики (технический университет) Способ получения металлодиэлектрических тонких пленок
US6066527A (en) * 1999-07-26 2000-05-23 Infineon Technologies North America Corp. Buried strap poly etch back (BSPE) process
DE10011672A1 (de) * 2000-03-10 2001-09-20 Infineon Technologies Ag Integrierte DRAM-Speicherzelle sowie DRAM-Speicher
DE10233760B4 (de) * 2002-07-25 2007-05-03 Infineon Technologies Ag SRAM-Speicherzelle mit Älzgräben und deren Array-Anordnung
CN120379244A (zh) * 2024-01-25 2025-07-25 华为技术有限公司 存储阵列及其制备方法、存储器、电子设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4713678A (en) * 1984-12-07 1987-12-15 Texas Instruments Incorporated dRAM cell and method
JPH0191449A (ja) * 1987-10-02 1989-04-11 Matsushita Electric Ind Co Ltd 半導体メモリ装置
JP2606857B2 (ja) * 1987-12-10 1997-05-07 株式会社日立製作所 半導体記憶装置の製造方法
JPH0220061A (ja) * 1988-07-08 1990-01-23 Oki Electric Ind Co Ltd 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
DE4103105C2 (https=) 1993-05-13
JP2572864B2 (ja) 1997-01-16
JPH03227566A (ja) 1991-10-08
DE4103105A1 (de) 1991-08-08

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