JPWO2024252870A1 - - Google Patents

Info

Publication number
JPWO2024252870A1
JPWO2024252870A1 JP2025526021A JP2025526021A JPWO2024252870A1 JP WO2024252870 A1 JPWO2024252870 A1 JP WO2024252870A1 JP 2025526021 A JP2025526021 A JP 2025526021A JP 2025526021 A JP2025526021 A JP 2025526021A JP WO2024252870 A1 JPWO2024252870 A1 JP WO2024252870A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025526021A
Other languages
Japanese (ja)
Other versions
JPWO2024252870A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024252870A1 publication Critical patent/JPWO2024252870A1/ja
Publication of JPWO2024252870A5 publication Critical patent/JPWO2024252870A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/30Stacked capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/20Inductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/68Capacitors having no potential barriers
    • H10D1/692Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2025526021A 2023-06-07 2024-05-15 Pending JPWO2024252870A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023094199 2023-06-07
PCT/JP2024/017949 WO2024252870A1 (ja) 2023-06-07 2024-05-15 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024252870A1 true JPWO2024252870A1 (https=) 2024-12-12
JPWO2024252870A5 JPWO2024252870A5 (https=) 2026-03-05

Family

ID=93795339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025526021A Pending JPWO2024252870A1 (https=) 2023-06-07 2024-05-15

Country Status (4)

Country Link
US (1) US20260082686A1 (https=)
JP (1) JPWO2024252870A1 (https=)
CN (1) CN121312282A (https=)
WO (1) WO2024252870A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4647194B2 (ja) * 2003-07-14 2011-03-09 新光電気工業株式会社 キャパシタ装置及びその製造方法
JP5138260B2 (ja) * 2006-05-19 2013-02-06 株式会社テラミクロス チップ型電子部品
JP2012038818A (ja) * 2010-08-04 2012-02-23 Toshiba Corp 半導体装置
US9153504B2 (en) * 2013-10-11 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Metal insulator metal capacitor and method for making the same
JP6332547B2 (ja) * 2015-02-27 2018-05-30 株式会社村田製作所 キャパシタおよび電子機器
JP6489202B2 (ja) * 2015-02-27 2019-03-27 株式会社村田製作所 キャパシタ
US9875848B2 (en) * 2015-12-21 2018-01-23 Qualcomm Incorporated MIM capacitor and method of making the same
JP6451893B2 (ja) * 2016-03-18 2019-01-16 株式会社村田製作所 容量素子
CN211181978U (zh) * 2018-07-11 2020-08-04 株式会社村田制作所 电容元件

Also Published As

Publication number Publication date
WO2024252870A1 (ja) 2024-12-12
CN121312282A (zh) 2026-01-09
US20260082686A1 (en) 2026-03-19

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Legal Events

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