JPWO2024203860A1 - - Google Patents
Info
- Publication number
- JPWO2024203860A1 JPWO2024203860A1 JP2025510722A JP2025510722A JPWO2024203860A1 JP WO2024203860 A1 JPWO2024203860 A1 JP WO2024203860A1 JP 2025510722 A JP2025510722 A JP 2025510722A JP 2025510722 A JP2025510722 A JP 2025510722A JP WO2024203860 A1 JPWO2024203860 A1 JP WO2024203860A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/246—A series resonance being added in shunt in the input circuit, e.g. base, gate, of an amplifier stage, e.g. as a trap
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/402—A series resonance being added in shunt in the output circuit, e.g. base, gate, of an amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202363492956P | 2023-03-29 | 2023-03-29 | |
| US202363493214P | 2023-03-30 | 2023-03-30 | |
| PCT/JP2024/011317 WO2024203860A1 (ja) | 2023-03-29 | 2024-03-22 | 高周波増幅器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024203860A1 true JPWO2024203860A1 (https=) | 2024-10-03 |
| JPWO2024203860A5 JPWO2024203860A5 (https=) | 2025-12-22 |
Family
ID=92905036
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025510722A Pending JPWO2024203860A1 (https=) | 2023-03-29 | 2024-03-22 | |
| JP2025510731A Pending JPWO2024203872A1 (https=) | 2023-03-29 | 2024-03-22 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025510731A Pending JPWO2024203872A1 (https=) | 2023-03-29 | 2024-03-22 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20260012144A1 (https=) |
| JP (2) | JPWO2024203860A1 (https=) |
| WO (2) | WO2024203872A1 (https=) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4406991A (en) * | 1982-02-04 | 1983-09-27 | Westinghouse Electric Corp. | High power resonance filters |
| JPH0512795A (ja) * | 1991-07-02 | 1993-01-22 | Sony Corp | ハーフトラツプ回路 |
| JP3888785B2 (ja) * | 1998-09-28 | 2007-03-07 | 三菱電機株式会社 | 高周波電力増幅器 |
| JP2002171138A (ja) * | 2000-12-01 | 2002-06-14 | Nec Corp | マイクロ波電力増幅器 |
| JP4743077B2 (ja) * | 2006-10-23 | 2011-08-10 | 三菱電機株式会社 | 高周波電力増幅器 |
| US8431973B2 (en) * | 2008-12-10 | 2013-04-30 | Kabushiki Kaisha Toshiba | High frequency semiconductor device |
| JP5571047B2 (ja) * | 2011-09-15 | 2014-08-13 | 株式会社東芝 | 電力増幅装置 |
| WO2016203644A1 (ja) * | 2015-06-19 | 2016-12-22 | 三菱電機株式会社 | 電力増幅器 |
| US11695375B2 (en) * | 2020-12-03 | 2023-07-04 | Nxp Usa, Inc. | Power amplifier with a power transistor and an electrostatic discharge protection circuit on separate substrates |
-
2024
- 2024-03-22 WO PCT/JP2024/011341 patent/WO2024203872A1/ja not_active Ceased
- 2024-03-22 JP JP2025510722A patent/JPWO2024203860A1/ja active Pending
- 2024-03-22 JP JP2025510731A patent/JPWO2024203872A1/ja active Pending
- 2024-03-22 WO PCT/JP2024/011317 patent/WO2024203860A1/ja not_active Ceased
-
2025
- 2025-09-15 US US19/328,335 patent/US20260012144A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024203860A1 (ja) | 2024-10-03 |
| JPWO2024203872A1 (https=) | 2024-10-03 |
| WO2024203872A1 (ja) | 2024-10-03 |
| US20260012144A1 (en) | 2026-01-08 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250922 |