JPWO2024194728A1 - - Google Patents
Info
- Publication number
- JPWO2024194728A1 JPWO2024194728A1 JP2025507715A JP2025507715A JPWO2024194728A1 JP WO2024194728 A1 JPWO2024194728 A1 JP WO2024194728A1 JP 2025507715 A JP2025507715 A JP 2025507715A JP 2025507715 A JP2025507715 A JP 2025507715A JP WO2024194728 A1 JPWO2024194728 A1 JP WO2024194728A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023042985 | 2023-03-17 | ||
| JP2024001908 | 2024-01-10 | ||
| PCT/IB2024/052312 WO2024194728A1 (ja) | 2023-03-17 | 2024-03-11 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024194728A1 true JPWO2024194728A1 (https=) | 2024-09-26 |
Family
ID=92841017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025507715A Pending JPWO2024194728A1 (https=) | 2023-03-17 | 2024-03-11 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024194728A1 (https=) |
| WO (1) | WO2024194728A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100219519B1 (ko) * | 1997-01-10 | 1999-09-01 | 윤종용 | 페로일렉트릭 플로팅 게이트 램을 구비하는 반도체 메모리 디바이스 및 그 제조방법 |
| US10242989B2 (en) * | 2014-05-20 | 2019-03-26 | Micron Technology, Inc. | Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods |
| TWI685113B (zh) * | 2015-02-11 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP7123622B2 (ja) * | 2018-05-18 | 2022-08-23 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2021180276A (ja) * | 2020-05-15 | 2021-11-18 | キオクシア株式会社 | 記憶装置 |
-
2024
- 2024-03-11 JP JP2025507715A patent/JPWO2024194728A1/ja active Pending
- 2024-03-11 WO PCT/IB2024/052312 patent/WO2024194728A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024194728A1 (ja) | 2024-09-26 |