JPWO2024100788A1 - - Google Patents
Info
- Publication number
- JPWO2024100788A1 JPWO2024100788A1 JP2024556907A JP2024556907A JPWO2024100788A1 JP WO2024100788 A1 JPWO2024100788 A1 JP WO2024100788A1 JP 2024556907 A JP2024556907 A JP 2024556907A JP 2024556907 A JP2024556907 A JP 2024556907A JP WO2024100788 A1 JPWO2024100788 A1 JP WO2024100788A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/041677 WO2024100788A1 (ja) | 2022-11-09 | 2022-11-09 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024100788A1 true JPWO2024100788A1 (https=) | 2024-05-16 |
Family
ID=91032505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024556907A Pending JPWO2024100788A1 (https=) | 2022-11-09 | 2022-11-09 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024100788A1 (https=) |
| WO (1) | WO2024100788A1 (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010157691A (ja) * | 2008-12-02 | 2010-07-15 | Opnext Japan Inc | 光半導体装置 |
| JP2011009456A (ja) * | 2009-06-25 | 2011-01-13 | Opnext Japan Inc | 半導体光素子、及びその製造方法 |
| JP2015072980A (ja) * | 2013-10-02 | 2015-04-16 | 富士通株式会社 | 光半導体素子、光半導体素子アレイ、光送信モジュール及び光伝送システム |
| JP2017003729A (ja) * | 2015-06-09 | 2017-01-05 | 日本オクラロ株式会社 | 光信号生成装置 |
| US20190326729A1 (en) * | 2016-11-17 | 2019-10-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for fabricating an elctro-absorption modulated laser and electro-absorption modulated laser |
-
2022
- 2022-11-09 JP JP2024556907A patent/JPWO2024100788A1/ja active Pending
- 2022-11-09 WO PCT/JP2022/041677 patent/WO2024100788A1/ja not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010157691A (ja) * | 2008-12-02 | 2010-07-15 | Opnext Japan Inc | 光半導体装置 |
| JP2011009456A (ja) * | 2009-06-25 | 2011-01-13 | Opnext Japan Inc | 半導体光素子、及びその製造方法 |
| JP2015072980A (ja) * | 2013-10-02 | 2015-04-16 | 富士通株式会社 | 光半導体素子、光半導体素子アレイ、光送信モジュール及び光伝送システム |
| JP2017003729A (ja) * | 2015-06-09 | 2017-01-05 | 日本オクラロ株式会社 | 光信号生成装置 |
| US20190326729A1 (en) * | 2016-11-17 | 2019-10-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for fabricating an elctro-absorption modulated laser and electro-absorption modulated laser |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024100788A1 (ja) | 2024-05-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250324 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20260324 |