JPWO2024052774A1 - - Google Patents
Info
- Publication number
- JPWO2024052774A1 JPWO2024052774A1 JP2024545077A JP2024545077A JPWO2024052774A1 JP WO2024052774 A1 JPWO2024052774 A1 JP WO2024052774A1 JP 2024545077 A JP2024545077 A JP 2024545077A JP 2024545077 A JP2024545077 A JP 2024545077A JP WO2024052774 A1 JPWO2024052774 A1 JP WO2024052774A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022142989 | 2022-09-08 | ||
| PCT/IB2023/058644 WO2024052774A1 (ja) | 2022-09-08 | 2023-09-01 | 半導体装置の作製方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024052774A1 true JPWO2024052774A1 (https=) | 2024-03-14 |
Family
ID=90192115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024545077A Pending JPWO2024052774A1 (https=) | 2022-09-08 | 2023-09-01 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024052774A1 (https=) |
| WO (1) | WO2024052774A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202604247A (zh) * | 2024-04-19 | 2026-01-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2025233772A1 (ja) * | 2024-05-10 | 2025-11-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2025243155A1 (ja) * | 2024-05-23 | 2025-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000349301A (ja) * | 1999-04-01 | 2000-12-15 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2005150494A (ja) * | 2003-11-18 | 2005-06-09 | Sony Corp | 半導体装置の製造方法 |
| JP5180121B2 (ja) * | 2009-02-20 | 2013-04-10 | 東京エレクトロン株式会社 | 基板処理方法 |
| JP2017168764A (ja) * | 2016-03-18 | 2017-09-21 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP7015509B2 (ja) * | 2017-03-10 | 2022-02-03 | 株式会社ナノマテックス | はんだ接合工法 |
-
2023
- 2023-09-01 JP JP2024545077A patent/JPWO2024052774A1/ja active Pending
- 2023-09-01 WO PCT/IB2023/058644 patent/WO2024052774A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024052774A1 (ja) | 2024-03-14 |