JPWO2024034267A5 - - Google Patents

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Publication number
JPWO2024034267A5
JPWO2024034267A5 JP2024540295A JP2024540295A JPWO2024034267A5 JP WO2024034267 A5 JPWO2024034267 A5 JP WO2024034267A5 JP 2024540295 A JP2024540295 A JP 2024540295A JP 2024540295 A JP2024540295 A JP 2024540295A JP WO2024034267 A5 JPWO2024034267 A5 JP WO2024034267A5
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JP
Japan
Prior art keywords
silicon carbide
substrate according
carbide substrate
ssk
skewness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024540295A
Other languages
English (en)
Japanese (ja)
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JPWO2024034267A1 (cg-RX-API-DMAC7.html
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Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/022960 external-priority patent/WO2024034267A1/ja
Publication of JPWO2024034267A1 publication Critical patent/JPWO2024034267A1/ja
Publication of JPWO2024034267A5 publication Critical patent/JPWO2024034267A5/ja
Pending legal-status Critical Current

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JP2024540295A 2022-08-08 2023-06-21 Pending JPWO2024034267A1 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022126501 2022-08-08
PCT/JP2023/022960 WO2024034267A1 (ja) 2022-08-08 2023-06-21 炭化珪素基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2024034267A1 JPWO2024034267A1 (cg-RX-API-DMAC7.html) 2024-02-15
JPWO2024034267A5 true JPWO2024034267A5 (cg-RX-API-DMAC7.html) 2025-04-21

Family

ID=89851301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024540295A Pending JPWO2024034267A1 (cg-RX-API-DMAC7.html) 2022-08-08 2023-06-21

Country Status (2)

Country Link
JP (1) JPWO2024034267A1 (cg-RX-API-DMAC7.html)
WO (1) WO2024034267A1 (cg-RX-API-DMAC7.html)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5465295B2 (ja) * 2012-08-31 2014-04-09 富士通株式会社 化合物半導体装置、およびその製造方法
JP6030733B2 (ja) * 2015-11-05 2016-11-24 住友化学株式会社 トランジスタ用窒化物半導体エピタキシャルウエハ及び窒化物半導体電界効果トランジスタ
KR102192525B1 (ko) * 2020-02-28 2020-12-17 에스케이씨 주식회사 웨이퍼, 에피택셜 웨이퍼 및 이의 제조방법

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