JPWO2024014462A1 - - Google Patents

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Publication number
JPWO2024014462A1
JPWO2024014462A1 JP2023575737A JP2023575737A JPWO2024014462A1 JP WO2024014462 A1 JPWO2024014462 A1 JP WO2024014462A1 JP 2023575737 A JP2023575737 A JP 2023575737A JP 2023575737 A JP2023575737 A JP 2023575737A JP WO2024014462 A1 JPWO2024014462 A1 JP WO2024014462A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023575737A
Other languages
Japanese (ja)
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JP7520258B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of JPWO2024014462A1 publication Critical patent/JPWO2024014462A1/ja
Priority to JP2024067833A priority Critical patent/JP2024109570A/ja
Application granted granted Critical
Publication of JP7520258B2 publication Critical patent/JP7520258B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/12—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/76—Dibenzothiophenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/06—Hydrocarbons
    • C08F12/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/10—Esters
    • C08F22/12—Esters of phenols or saturated alcohols
    • C08F22/24—Esters containing sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2023575737A 2022-07-15 2023-07-11 レジスト組成物、レジストパターン形成方法、化合物、及び高分子化合物 Active JP7520258B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024067833A JP2024109570A (ja) 2022-07-15 2024-04-18 レジスト組成物、レジストパターン形成方法、化合物、及び高分子化合物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022114249 2022-07-15
JP2022114249 2022-07-15
PCT/JP2023/025597 WO2024014462A1 (ja) 2022-07-15 2023-07-11 レジスト組成物、レジストパターン形成方法、化合物、及び高分子化合物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024067833A Division JP2024109570A (ja) 2022-07-15 2024-04-18 レジスト組成物、レジストパターン形成方法、化合物、及び高分子化合物

Publications (2)

Publication Number Publication Date
JPWO2024014462A1 true JPWO2024014462A1 (https=) 2024-01-18
JP7520258B2 JP7520258B2 (ja) 2024-07-22

Family

ID=89536738

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023575737A Active JP7520258B2 (ja) 2022-07-15 2023-07-11 レジスト組成物、レジストパターン形成方法、化合物、及び高分子化合物
JP2024067833A Pending JP2024109570A (ja) 2022-07-15 2024-04-18 レジスト組成物、レジストパターン形成方法、化合物、及び高分子化合物

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024067833A Pending JP2024109570A (ja) 2022-07-15 2024-04-18 レジスト組成物、レジストパターン形成方法、化合物、及び高分子化合物

Country Status (4)

Country Link
JP (2) JP7520258B2 (https=)
KR (1) KR20250039326A (https=)
TW (1) TW202417988A (https=)
WO (1) WO2024014462A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024203352A1 (https=) * 2023-03-30 2024-10-03
WO2025079648A1 (ja) * 2023-10-11 2025-04-17 三菱瓦斯化学株式会社 化合物、組成物、樹脂組成物、膜形成用組成物、リソグラフィー用膜形成用組成物、レジスト膜形成用組成物
JP2025158555A (ja) 2024-04-05 2025-10-17 信越化学工業株式会社 オニウム塩型モノマー、ポリマー、化学増幅レジスト組成物及びパターン形成方法
JP2026002101A (ja) 2024-06-20 2026-01-08 信越化学工業株式会社 オニウム塩型モノマー、ポリマー、化学増幅レジスト組成物及びパターン形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013133357A (ja) * 2011-12-26 2013-07-08 Sumitomo Chemical Co Ltd 樹脂及びレジスト組成物
JP2014001259A (ja) * 2012-06-15 2014-01-09 Shin Etsu Chem Co Ltd スルホニウム塩、高分子化合物、レジスト材料及びパターン形成方法
JP2022191163A (ja) * 2021-06-15 2022-12-27 信越化学工業株式会社 レジスト材料及びパターン形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6307290B2 (ja) 2013-03-06 2018-04-04 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
JP2021187909A (ja) * 2020-05-27 2021-12-13 住友化学株式会社 エポキシ樹脂組成物
JP7544007B2 (ja) * 2020-10-01 2024-09-03 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013133357A (ja) * 2011-12-26 2013-07-08 Sumitomo Chemical Co Ltd 樹脂及びレジスト組成物
JP2014001259A (ja) * 2012-06-15 2014-01-09 Shin Etsu Chem Co Ltd スルホニウム塩、高分子化合物、レジスト材料及びパターン形成方法
JP2022191163A (ja) * 2021-06-15 2022-12-27 信越化学工業株式会社 レジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
WO2024014462A1 (ja) 2024-01-18
JP2024109570A (ja) 2024-08-14
TW202417988A (zh) 2024-05-01
KR20250039326A (ko) 2025-03-20
JP7520258B2 (ja) 2024-07-22

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