TW202417988A - 阻劑組成物、阻劑圖型形成方法、化合物及高分子化合物 - Google Patents

阻劑組成物、阻劑圖型形成方法、化合物及高分子化合物 Download PDF

Info

Publication number
TW202417988A
TW202417988A TW112126173A TW112126173A TW202417988A TW 202417988 A TW202417988 A TW 202417988A TW 112126173 A TW112126173 A TW 112126173A TW 112126173 A TW112126173 A TW 112126173A TW 202417988 A TW202417988 A TW 202417988A
Authority
TW
Taiwan
Prior art keywords
group
substituent
alkyl group
carbon atoms
compound
Prior art date
Application number
TW112126173A
Other languages
English (en)
Chinese (zh)
Inventor
石井秀一
Original Assignee
日商東京應化工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京應化工業股份有限公司 filed Critical 日商東京應化工業股份有限公司
Publication of TW202417988A publication Critical patent/TW202417988A/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01Sulfonic acids
    • C07C309/02Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/12Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D333/00Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/76Dibenzothiophenes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02Monomers containing only one unsaturated aliphatic radical
    • C08F12/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/06Hydrocarbons
    • C08F12/08Styrene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/10Esters
    • C08F22/12Esters of phenols or saturated alcohols
    • C08F22/24Esters containing sulfur
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW112126173A 2022-07-15 2023-07-13 阻劑組成物、阻劑圖型形成方法、化合物及高分子化合物 TW202417988A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022114249 2022-07-15
JP2022-114249 2022-07-15

Publications (1)

Publication Number Publication Date
TW202417988A true TW202417988A (zh) 2024-05-01

Family

ID=89536738

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112126173A TW202417988A (zh) 2022-07-15 2023-07-13 阻劑組成物、阻劑圖型形成方法、化合物及高分子化合物

Country Status (4)

Country Link
JP (2) JP7520258B2 (https=)
KR (1) KR20250039326A (https=)
TW (1) TW202417988A (https=)
WO (1) WO2024014462A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024203352A1 (https=) * 2023-03-30 2024-10-03
WO2025079648A1 (ja) * 2023-10-11 2025-04-17 三菱瓦斯化学株式会社 化合物、組成物、樹脂組成物、膜形成用組成物、リソグラフィー用膜形成用組成物、レジスト膜形成用組成物
JP2025158555A (ja) 2024-04-05 2025-10-17 信越化学工業株式会社 オニウム塩型モノマー、ポリマー、化学増幅レジスト組成物及びパターン形成方法
JP2026002101A (ja) 2024-06-20 2026-01-08 信越化学工業株式会社 オニウム塩型モノマー、ポリマー、化学増幅レジスト組成物及びパターン形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5942419B2 (ja) * 2011-12-26 2016-06-29 住友化学株式会社 樹脂及びレジスト組成物
JP5783137B2 (ja) * 2012-06-15 2015-09-24 信越化学工業株式会社 スルホニウム塩、高分子化合物、レジスト材料及びパターン形成方法
JP6307290B2 (ja) 2013-03-06 2018-04-04 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
JP2021187909A (ja) * 2020-05-27 2021-12-13 住友化学株式会社 エポキシ樹脂組成物
JP7544007B2 (ja) * 2020-10-01 2024-09-03 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP7826834B2 (ja) * 2021-06-15 2026-03-10 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
KR20250039326A (ko) 2025-03-20
JP2024109570A (ja) 2024-08-14
JP7520258B2 (ja) 2024-07-22
WO2024014462A1 (ja) 2024-01-18
JPWO2024014462A1 (https=) 2024-01-18

Similar Documents

Publication Publication Date Title
JP7520258B2 (ja) レジスト組成物、レジストパターン形成方法、化合物、及び高分子化合物
JP7493560B2 (ja) レジスト組成物、レジストパターン形成方法、化合物及び高分子化合物
WO2025089351A1 (ja) レジスト組成物、レジストパターン形成方法、化合物、及び高分子化合物
WO2025079553A1 (ja) レジスト組成物、レジストパターン形成方法、及び化合物
WO2025047532A1 (ja) レジスト組成物、レジストパターン形成方法、高分子化合物、及び化合物
TW202506635A (zh) 阻劑組成物、阻劑圖型形成方法、化合物及高分子化合物
TW202502720A (zh) 阻劑組成物、阻劑圖型形成方法、化合物及高分子化合物
TW202524211A (zh) 阻劑組成物、阻劑圖型形成方法、高分子化合物及化合物
WO2026028725A1 (ja) レジスト組成物、レジストパターン形成方法、化合物、及び高分子化合物
WO2024252943A1 (ja) レジスト組成物、レジストパターン形成方法、化合物及び高分子化合物
TW202519979A (zh) 阻劑組成物、阻劑圖型形成方法、化合物及高分子化合物
JP2026006789A (ja) レジスト組成物、レジストパターン形成方法、含フッ素高分子化合物、及び化合物
JP2025096010A (ja) レジスト組成物、レジストパターン形成方法、化合物及び高分子化合物
WO2025005042A1 (ja) レジスト組成物、レジストパターン形成方法、化合物及び高分子化合物
TW202438486A (zh) 阻劑組成物、阻劑圖型形成方法、化合物及酸擴散控制劑
JP2025034990A (ja) レジスト組成物、レジストパターン形成方法、化合物、及び酸拡散制御剤
WO2025121384A1 (ja) レジスト組成物、レジストパターン形成方法、及び高分子化合物
WO2025004967A1 (ja) レジスト組成物、レジストパターン形成方法、化合物及び高分子化合物
WO2025018212A1 (ja) レジスト組成物、レジストパターン形成方法、化合物及び高分子化合物
WO2025134757A1 (ja) レジスト組成物、レジストパターン形成方法、化合物、高分子化合物、及び酸拡散制御剤
WO2025074941A1 (ja) レジスト組成物、レジストパターン形成方法、化合物及び高分子化合物
TW202448851A (zh) 阻劑組成物、阻劑圖型形成方法、化合物及高分子化合物
WO2024190825A1 (ja) レジスト組成物、レジストパターン形成方法、含フッ素高分子化合物、及び化合物
WO2025004794A1 (ja) レジスト組成物、レジストパターン形成方法、化合物及び高分子化合物
TW202524210A (zh) 阻劑組成物、阻劑圖型形成方法、化合物及酸產生劑