JPWO2023281969A1 - - Google Patents

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Publication number
JPWO2023281969A1
JPWO2023281969A1 JP2023533476A JP2023533476A JPWO2023281969A1 JP WO2023281969 A1 JPWO2023281969 A1 JP WO2023281969A1 JP 2023533476 A JP2023533476 A JP 2023533476A JP 2023533476 A JP2023533476 A JP 2023533476A JP WO2023281969 A1 JPWO2023281969 A1 JP WO2023281969A1
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JP
Japan
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Pending
Application number
JP2023533476A
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Publication date
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Publication of JPWO2023281969A1 publication Critical patent/JPWO2023281969A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
    • H01L29/7818—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H01L29/7819—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode in antiparallel, e.g. freewheel diode
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
    • H01L29/7818—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
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    • H01L29/868—PIN diodes
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    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H01L29/107—Substrate region of field-effect devices
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    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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    • H01L29/66409—Unipolar field-effect transistors
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    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7823—Lateral DMOS transistors, i.e. LDMOS transistors with an edge termination structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2023533476A 2021-07-08 2022-06-08 Pending JPWO2023281969A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021113669 2021-07-08
PCT/JP2022/023165 WO2023281969A1 (ja) 2021-07-08 2022-06-08 半導体装置

Publications (1)

Publication Number Publication Date
JPWO2023281969A1 true JPWO2023281969A1 (ja) 2023-01-12

Family

ID=84800267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023533476A Pending JPWO2023281969A1 (ja) 2021-07-08 2022-06-08

Country Status (5)

Country Link
US (1) US20240128373A1 (ja)
JP (1) JPWO2023281969A1 (ja)
CN (1) CN117425966A (ja)
DE (1) DE112022003464T5 (ja)
WO (1) WO2023281969A1 (ja)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5206028B2 (ja) * 2008-03-03 2013-06-12 株式会社デンソー 半導体装置
EP2608272A1 (en) * 2011-12-23 2013-06-26 Imec N-channel LDMOS device
JP6221284B2 (ja) * 2013-03-19 2017-11-01 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
JP2015023208A (ja) 2013-07-22 2015-02-02 旭化成エレクトロニクス株式会社 電界効果トランジスタ及び半導体装置、電界効果トランジスタの製造方法
JP2017079432A (ja) * 2015-10-21 2017-04-27 株式会社デンソー 半導体装置
US11255589B2 (en) 2020-01-18 2022-02-22 True Manufacturing Co., Inc. Ice maker

Also Published As

Publication number Publication date
DE112022003464T5 (de) 2024-04-25
WO2023281969A1 (ja) 2023-01-12
CN117425966A (zh) 2024-01-19
US20240128373A1 (en) 2024-04-18

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