JPWO2023281848A1 - - Google Patents
Info
- Publication number
- JPWO2023281848A1 JPWO2023281848A1 JP2023533413A JP2023533413A JPWO2023281848A1 JP WO2023281848 A1 JPWO2023281848 A1 JP WO2023281848A1 JP 2023533413 A JP2023533413 A JP 2023533413A JP 2023533413 A JP2023533413 A JP 2023533413A JP WO2023281848 A1 JPWO2023281848 A1 JP WO2023281848A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021113820 | 2021-07-08 | ||
PCT/JP2022/013335 WO2023281848A1 (ja) | 2021-07-08 | 2022-03-23 | 半導体レーザ素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2023281848A1 true JPWO2023281848A1 (ja) | 2023-01-12 |
Family
ID=84801409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023533413A Pending JPWO2023281848A1 (ja) | 2021-07-08 | 2022-03-23 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPWO2023281848A1 (ja) |
WO (1) | WO2023281848A1 (ja) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5444609B2 (ja) * | 2007-11-08 | 2014-03-19 | 日亜化学工業株式会社 | 半導体レーザ素子 |
JP7107849B2 (ja) * | 2016-11-01 | 2022-07-27 | ソニーセミコンダクタソリューションズ株式会社 | 半導体素子の製造方法 |
JP2020126995A (ja) * | 2019-02-06 | 2020-08-20 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
-
2022
- 2022-03-23 JP JP2023533413A patent/JPWO2023281848A1/ja active Pending
- 2022-03-23 WO PCT/JP2022/013335 patent/WO2023281848A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2023281848A1 (ja) | 2023-01-12 |