JPWO2023248406A1 - - Google Patents

Info

Publication number
JPWO2023248406A1
JPWO2023248406A1 JP2023553646A JP2023553646A JPWO2023248406A1 JP WO2023248406 A1 JPWO2023248406 A1 JP WO2023248406A1 JP 2023553646 A JP2023553646 A JP 2023553646A JP 2023553646 A JP2023553646 A JP 2023553646A JP WO2023248406 A1 JPWO2023248406 A1 JP WO2023248406A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023553646A
Other versions
JPWO2023248406A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023248406A1 publication Critical patent/JPWO2023248406A1/ja
Publication of JPWO2023248406A5 publication Critical patent/JPWO2023248406A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2023553646A 2022-06-23 2022-06-23 Pending JPWO2023248406A1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/025026 WO2023248406A1 (ja) 2022-06-23 2022-06-23 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPWO2023248406A1 true JPWO2023248406A1 (ja) 2023-12-28
JPWO2023248406A5 JPWO2023248406A5 (ja) 2024-05-28

Family

ID=89379278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023553646A Pending JPWO2023248406A1 (ja) 2022-06-23 2022-06-23

Country Status (5)

Country Link
JP (1) JPWO2023248406A1 (ja)
KR (1) KR20240001113A (ja)
CN (1) CN117642847A (ja)
TW (1) TW202403875A (ja)
WO (1) WO2023248406A1 (ja)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067036A (ja) 2005-08-30 2007-03-15 Hitachi High-Technologies Corp 真空処理装置
US8637794B2 (en) * 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US8546732B2 (en) * 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
JP6382979B2 (ja) * 2014-07-22 2018-08-29 京セラ株式会社 載置用部材
WO2016080502A1 (ja) * 2014-11-20 2016-05-26 住友大阪セメント株式会社 静電チャック装置
JP7158131B2 (ja) * 2017-05-30 2022-10-21 東京エレクトロン株式会社 ステージ及びプラズマ処理装置
JP7183526B2 (ja) * 2020-09-28 2022-12-06 Toto株式会社 静電チャック及び半導体製造装置

Also Published As

Publication number Publication date
TW202403875A (zh) 2024-01-16
CN117642847A (zh) 2024-03-01
WO2023248406A1 (ja) 2023-12-28
KR20240001113A (ko) 2024-01-03

Similar Documents

Publication Publication Date Title
BR102023014872A2 (ja)
BR102023012440A2 (ja)
BR102023010976A2 (ja)
BR102023009641A2 (ja)
BR102023008688A2 (ja)
BR102023007252A2 (ja)
BR102023005164A2 (ja)
BR102023001987A2 (ja)
BR102023001877A2 (ja)
JPWO2023166866A1 (ja)
BR102023000289A2 (ja)
BR102022026909A2 (ja)
BR102022023461A2 (ja)
BR102022017795A2 (ja)
BR202022005961U2 (ja)
BR202022001779U2 (ja)
BR202022000931U2 (ja)
CN307050272S (ja)
CN307045427S (ja)
CN307052664S (ja)
CN307052298S (ja)
CN307052026S (ja)
CN307052879S (ja)
CN307050770S (ja)
BY13144U (ja)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230904

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230904