JPWO2023209486A5 - - Google Patents
Info
- Publication number
- JPWO2023209486A5 JPWO2023209486A5 JP2024517599A JP2024517599A JPWO2023209486A5 JP WO2023209486 A5 JPWO2023209486 A5 JP WO2023209486A5 JP 2024517599 A JP2024517599 A JP 2024517599A JP 2024517599 A JP2024517599 A JP 2024517599A JP WO2023209486 A5 JPWO2023209486 A5 JP WO2023209486A5
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- insulator
- oxide film
- semiconductor device
- aluminum oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022075590 | 2022-04-29 | ||
| JP2022113126 | 2022-07-14 | ||
| PCT/IB2023/053823 WO2023209486A1 (ja) | 2022-04-29 | 2023-04-14 | 半導体装置、及び記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023209486A1 JPWO2023209486A1 (https=) | 2023-11-02 |
| JPWO2023209486A5 true JPWO2023209486A5 (https=) | 2026-02-10 |
Family
ID=88518037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024517599A Pending JPWO2023209486A1 (https=) | 2022-04-29 | 2023-04-14 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250241009A1 (https=) |
| JP (1) | JPWO2023209486A1 (https=) |
| KR (1) | KR20250003743A (https=) |
| CN (1) | CN119013792A (https=) |
| WO (1) | WO2023209486A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101473684B1 (ko) | 2009-12-25 | 2014-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011096275A1 (en) * | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101809105B1 (ko) | 2010-08-06 | 2017-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
| JP6246549B2 (ja) * | 2012-10-17 | 2017-12-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR102865410B1 (ko) | 2015-02-06 | 2025-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP2020047357A (ja) * | 2018-09-14 | 2020-03-26 | 株式会社半導体エネルギー研究所 | Ｉｃカード、半導体装置、および、電子機器 |
-
2023
- 2023-04-14 KR KR1020247037280A patent/KR20250003743A/ko active Pending
- 2023-04-14 CN CN202380034188.9A patent/CN119013792A/zh active Pending
- 2023-04-14 US US18/855,764 patent/US20250241009A1/en active Pending
- 2023-04-14 WO PCT/IB2023/053823 patent/WO2023209486A1/ja not_active Ceased
- 2023-04-14 JP JP2024517599A patent/JPWO2023209486A1/ja active Pending
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