JPWO2023195322A1 - - Google Patents

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Publication number
JPWO2023195322A1
JPWO2023195322A1 JP2024514206A JP2024514206A JPWO2023195322A1 JP WO2023195322 A1 JPWO2023195322 A1 JP WO2023195322A1 JP 2024514206 A JP2024514206 A JP 2024514206A JP 2024514206 A JP2024514206 A JP 2024514206A JP WO2023195322 A1 JPWO2023195322 A1 JP WO2023195322A1
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JP
Japan
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JP2024514206A
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Japanese (ja)
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JP7790560B2 (ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01351—Changing the shapes of die-attach connectors
    • H10W72/01359—Changing the shapes of die-attach connectors by planarisation, e.g. chemical-mechanical polishing [CMP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07341—Controlling the bonding environment, e.g. atmosphere composition or temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
JP2024514206A 2022-04-06 2023-03-16 半導体装置の製造方法、ハイブリッドボンディング絶縁膜形成材料及び半導体装置 Active JP7790560B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022063656 2022-04-06
JP2022063656 2022-04-06
PCT/JP2023/010464 WO2023195322A1 (ja) 2022-04-06 2023-03-16 半導体装置の製造方法、ハイブリッドボンディング絶縁膜形成材料及び半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023195322A1 true JPWO2023195322A1 (https=) 2023-10-12
JP7790560B2 JP7790560B2 (ja) 2025-12-23

Family

ID=88242691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024514206A Active JP7790560B2 (ja) 2022-04-06 2023-03-16 半導体装置の製造方法、ハイブリッドボンディング絶縁膜形成材料及び半導体装置

Country Status (6)

Country Link
US (1) US20250233103A1 (https=)
JP (1) JP7790560B2 (https=)
KR (1) KR20250029772A (https=)
CN (1) CN118974883A (https=)
TW (1) TW202405879A (https=)
WO (1) WO2023195322A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024054799A1 (en) * 2022-09-07 2024-03-14 Adeia Semiconductor Bonding Technologies Inc. Rapid thermal processing for direct bonding
WO2025249309A1 (ja) * 2024-05-28 2025-12-04 東レ株式会社 樹脂組成物、硬化物、積層体、半導体デバイス及び積層体の製造方法
WO2026069655A1 (ja) * 2024-09-30 2026-04-02 Ｒａｐｉｄｕｓ株式会社 半導体装置および半導体装置の製造方法
JP7732619B1 (ja) * 2025-03-07 2025-09-02 株式会社レゾナック 半導体装置の製造方法、スラリ、及び、樹脂材料

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001228609A (ja) * 1999-11-30 2001-08-24 Nissan Chem Ind Ltd ポジ型感光性ポリイミド樹脂組成物
JP2007318141A (ja) * 2006-05-25 2007-12-06 Internatl Business Mach Corp <Ibm> 貴金属ライナとこれに隣接する誘電材料間の付着性を向上させた相互接続構造およびその製造方法（金属／誘電体界面のための付着性向上）
WO2011040440A1 (ja) * 2009-09-30 2011-04-07 大日本印刷株式会社 フレキシブルデバイス用基板、フレキシブルデバイス用薄膜トランジスタ基板、フレキシブルデバイス、薄膜素子用基板、薄膜素子、薄膜トランジスタ、薄膜素子用基板の製造方法、薄膜素子の製造方法および薄膜トランジスタの製造方法
WO2015040798A1 (ja) * 2013-09-20 2015-03-26 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
US20150097022A1 (en) * 2013-10-03 2015-04-09 Commissariat A L'energie Atomique Et Aux Ene Alt Process for direct bonding of two elements comprising metallic portions and dielectric materials
JP2018528622A (ja) * 2015-08-25 2018-09-27 インヴェンサス ボンディング テクノロジーズ インコーポレイテッド 導電性バリアのダイレクトハイブリッドボンディング
WO2021131080A1 (ja) * 2019-12-27 2021-07-01 ボンドテック株式会社 接合方法、被接合物および接合装置
JP2021123652A (ja) * 2020-02-05 2021-08-30 富士フイルム株式会社 樹脂組成物、硬化膜、積層体、硬化膜の製造方法、及び、半導体デバイス
JP2021197430A (ja) * 2020-06-12 2021-12-27 昭和電工マテリアルズ株式会社 半導体装置の製造方法
JP2021197431A (ja) * 2020-06-12 2021-12-27 昭和電工マテリアルズ株式会社 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7238271B2 (ja) 2018-05-21 2023-03-14 住友ベークライト株式会社 電子装置、及び電子装置の製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001228609A (ja) * 1999-11-30 2001-08-24 Nissan Chem Ind Ltd ポジ型感光性ポリイミド樹脂組成物
JP2007318141A (ja) * 2006-05-25 2007-12-06 Internatl Business Mach Corp <Ibm> 貴金属ライナとこれに隣接する誘電材料間の付着性を向上させた相互接続構造およびその製造方法（金属／誘電体界面のための付着性向上）
WO2011040440A1 (ja) * 2009-09-30 2011-04-07 大日本印刷株式会社 フレキシブルデバイス用基板、フレキシブルデバイス用薄膜トランジスタ基板、フレキシブルデバイス、薄膜素子用基板、薄膜素子、薄膜トランジスタ、薄膜素子用基板の製造方法、薄膜素子の製造方法および薄膜トランジスタの製造方法
WO2015040798A1 (ja) * 2013-09-20 2015-03-26 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
US20150097022A1 (en) * 2013-10-03 2015-04-09 Commissariat A L'energie Atomique Et Aux Ene Alt Process for direct bonding of two elements comprising metallic portions and dielectric materials
JP2018528622A (ja) * 2015-08-25 2018-09-27 インヴェンサス ボンディング テクノロジーズ インコーポレイテッド 導電性バリアのダイレクトハイブリッドボンディング
WO2021131080A1 (ja) * 2019-12-27 2021-07-01 ボンドテック株式会社 接合方法、被接合物および接合装置
JP2021123652A (ja) * 2020-02-05 2021-08-30 富士フイルム株式会社 樹脂組成物、硬化膜、積層体、硬化膜の製造方法、及び、半導体デバイス
JP2021197430A (ja) * 2020-06-12 2021-12-27 昭和電工マテリアルズ株式会社 半導体装置の製造方法
JP2021197431A (ja) * 2020-06-12 2021-12-27 昭和電工マテリアルズ株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
WO2023195322A1 (ja) 2023-10-12
KR20250029772A (ko) 2025-03-05
CN118974883A (zh) 2024-11-15
JP7790560B2 (ja) 2025-12-23
US20250233103A1 (en) 2025-07-17
TW202405879A (zh) 2024-02-01

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