JPWO2023167161A1 - - Google Patents
Info
- Publication number
- JPWO2023167161A1 JPWO2023167161A1 JP2024504684A JP2024504684A JPWO2023167161A1 JP WO2023167161 A1 JPWO2023167161 A1 JP WO2023167161A1 JP 2024504684 A JP2024504684 A JP 2024504684A JP 2024504684 A JP2024504684 A JP 2024504684A JP WO2023167161 A1 JPWO2023167161 A1 JP WO2023167161A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022030840 | 2022-03-01 | ||
| PCT/JP2023/007193 WO2023167161A1 (ja) | 2022-03-01 | 2023-02-28 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023167161A1 true JPWO2023167161A1 (https=) | 2023-09-07 |
| JPWO2023167161A5 JPWO2023167161A5 (https=) | 2024-11-06 |
Family
ID=87883711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024504684A Pending JPWO2023167161A1 (https=) | 2022-03-01 | 2023-02-28 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240395796A1 (https=) |
| JP (1) | JPWO2023167161A1 (https=) |
| CN (1) | CN118749135A (https=) |
| DE (1) | DE112023001175T5 (https=) |
| WO (1) | WO2023167161A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240429227A1 (en) * | 2023-06-23 | 2024-12-26 | Globalfoundries U.S. Inc. | Structures for an electrostatic discharge protection device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6610508B2 (ja) * | 2016-11-09 | 2019-11-27 | 株式会社デンソー | 半導体装置 |
| CN114556560B (zh) * | 2019-11-29 | 2026-01-23 | 罗姆股份有限公司 | 半导体器件 |
-
2023
- 2023-02-28 CN CN202380023420.9A patent/CN118749135A/zh active Pending
- 2023-02-28 WO PCT/JP2023/007193 patent/WO2023167161A1/ja not_active Ceased
- 2023-02-28 JP JP2024504684A patent/JPWO2023167161A1/ja active Pending
- 2023-02-28 DE DE112023001175.3T patent/DE112023001175T5/de active Pending
-
2024
- 2024-08-05 US US18/794,649 patent/US20240395796A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023167161A1 (ja) | 2023-09-07 |
| US20240395796A1 (en) | 2024-11-28 |
| DE112023001175T5 (de) | 2024-12-19 |
| CN118749135A (zh) | 2024-10-08 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240722 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260220 |