JPWO2023156866A5 - - Google Patents

Info

Publication number
JPWO2023156866A5
JPWO2023156866A5 JP2024500689A JP2024500689A JPWO2023156866A5 JP WO2023156866 A5 JPWO2023156866 A5 JP WO2023156866A5 JP 2024500689 A JP2024500689 A JP 2024500689A JP 2024500689 A JP2024500689 A JP 2024500689A JP WO2023156866 A5 JPWO2023156866 A5 JP WO2023156866A5
Authority
JP
Japan
Prior art keywords
electrode
transistor
storage device
source
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024500689A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023156866A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2023/050939 external-priority patent/WO2023156866A1/ja
Publication of JPWO2023156866A1 publication Critical patent/JPWO2023156866A1/ja
Publication of JPWO2023156866A5 publication Critical patent/JPWO2023156866A5/ja
Pending legal-status Critical Current

Links

JP2024500689A 2022-02-18 2023-02-03 Pending JPWO2023156866A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022023699 2022-02-18
PCT/IB2023/050939 WO2023156866A1 (ja) 2022-02-18 2023-02-03 記憶装置

Publications (2)

Publication Number Publication Date
JPWO2023156866A1 JPWO2023156866A1 (https=) 2023-08-24
JPWO2023156866A5 true JPWO2023156866A5 (https=) 2025-12-24

Family

ID=87577697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024500689A Pending JPWO2023156866A1 (https=) 2022-02-18 2023-02-03

Country Status (5)

Country Link
US (1) US20250169060A1 (https=)
JP (1) JPWO2023156866A1 (https=)
KR (1) KR20240151177A (https=)
CN (1) CN118633361A (https=)
WO (1) WO2023156866A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033828A (ja) * 2010-08-02 2012-02-16 Toshiba Corp 半導体記憶装置及びその製造方法
CN103022012B (zh) * 2011-09-21 2017-03-01 株式会社半导体能源研究所 半导体存储装置
JP6607681B2 (ja) * 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
JP2018201011A (ja) * 2017-05-26 2018-12-20 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN114424339A (zh) 2019-09-20 2022-04-29 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法

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