JPWO2023100612A1 - - Google Patents
Info
- Publication number
- JPWO2023100612A1 JPWO2023100612A1 JP2023564841A JP2023564841A JPWO2023100612A1 JP WO2023100612 A1 JPWO2023100612 A1 JP WO2023100612A1 JP 2023564841 A JP2023564841 A JP 2023564841A JP 2023564841 A JP2023564841 A JP 2023564841A JP WO2023100612 A1 JPWO2023100612 A1 JP WO2023100612A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/56—Cameras or camera modules comprising electronic image sensors; Control thereof provided with illuminating means
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/533—Control of the integration time by using differing integration times for different sensor regions
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
- H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021196518 | 2021-12-02 | ||
| JP2022131133 | 2022-08-19 | ||
| PCT/JP2022/041783 WO2023100612A1 (ja) | 2021-12-02 | 2022-11-09 | 撮像装置およびカメラシステム |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023100612A1 true JPWO2023100612A1 (https=) | 2023-06-08 |
Family
ID=86611985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023564841A Pending JPWO2023100612A1 (https=) | 2021-12-02 | 2022-11-09 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240298096A1 (https=) |
| EP (1) | EP4443896A4 (https=) |
| JP (1) | JPWO2023100612A1 (https=) |
| WO (1) | WO2023100612A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7713649B2 (ja) * | 2020-12-11 | 2025-07-28 | パナソニックＩｐマネジメント株式会社 | 撮像装置および駆動方法 |
| US12615448B2 (en) * | 2024-04-17 | 2026-04-28 | Himax Imaging Limited | White-infra-red image sensor having unit pixel with vertically stacked arrangement of photoelectric conversion regions |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100787938B1 (ko) | 2005-07-15 | 2007-12-24 | 삼성전자주식회사 | 공유 능동 화소 센서 구조의 씨모스 이미지 센서 및 그구동 방법 |
| JP2010232410A (ja) | 2009-03-27 | 2010-10-14 | Toyo Ink Mfg Co Ltd | 有機光電変換素子 |
| US20120204960A1 (en) | 2009-10-30 | 2012-08-16 | Takehito Kato | Organic photovoltaic cell and method for manufacturing the same |
| JP5533046B2 (ja) * | 2010-03-05 | 2014-06-25 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器 |
| KR102065633B1 (ko) | 2013-08-12 | 2020-01-13 | 삼성전자 주식회사 | 이미지 센서, 이의 동작 방법, 및 이를 포함하는 시스템 |
| CN112929586B (zh) * | 2015-12-03 | 2024-12-06 | 松下知识产权经营株式会社 | 摄像装置 |
| JP7308440B2 (ja) * | 2017-09-28 | 2023-07-14 | パナソニックＩｐマネジメント株式会社 | 撮像装置、およびカメラシステム |
| JP2019186738A (ja) | 2018-04-10 | 2019-10-24 | キヤノン株式会社 | 撮像装置 |
| WO2020170703A1 (ja) * | 2019-02-20 | 2020-08-27 | パナソニックＩｐマネジメント株式会社 | 撮像装置およびその駆動方法 |
| JP7599156B2 (ja) * | 2019-04-26 | 2024-12-13 | パナソニックＩｐマネジメント株式会社 | 撮像素子 |
-
2022
- 2022-11-09 WO PCT/JP2022/041783 patent/WO2023100612A1/ja not_active Ceased
- 2022-11-09 JP JP2023564841A patent/JPWO2023100612A1/ja active Pending
- 2022-11-09 EP EP22901045.9A patent/EP4443896A4/en not_active Withdrawn
-
2024
- 2024-05-13 US US18/661,759 patent/US20240298096A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP4443896A4 (en) | 2025-01-22 |
| US20240298096A1 (en) | 2024-09-05 |
| WO2023100612A1 (ja) | 2023-06-08 |
| EP4443896A1 (en) | 2024-10-09 |