JPWO2023026969A1 - - Google Patents
Info
- Publication number
- JPWO2023026969A1 JPWO2023026969A1 JP2023543871A JP2023543871A JPWO2023026969A1 JP WO2023026969 A1 JPWO2023026969 A1 JP WO2023026969A1 JP 2023543871 A JP2023543871 A JP 2023543871A JP 2023543871 A JP2023543871 A JP 2023543871A JP WO2023026969 A1 JPWO2023026969 A1 JP WO2023026969A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021137202 | 2021-08-25 | ||
| PCT/JP2022/031332 WO2023026969A1 (ja) | 2021-08-25 | 2022-08-19 | 薬液、パターン形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023026969A1 true JPWO2023026969A1 (https=) | 2023-03-02 |
Family
ID=85322149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023543871A Pending JPWO2023026969A1 (https=) | 2021-08-25 | 2022-08-19 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20240231236A1 (https=) |
| EP (1) | EP4394510A4 (https=) |
| JP (1) | JPWO2023026969A1 (https=) |
| CN (1) | CN117836721A (https=) |
| IL (1) | IL310843A (https=) |
| TW (1) | TW202319531A (https=) |
| WO (1) | WO2023026969A1 (https=) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0566570A (ja) * | 1991-09-06 | 1993-03-19 | Nippon Telegr & Teleph Corp <Ntt> | レジスト現像液およびパタン形成方法 |
| JP2009025708A (ja) * | 2007-07-23 | 2009-02-05 | Fujifilm Corp | パターン形成方法 |
| WO2020071261A1 (ja) * | 2018-10-03 | 2020-04-09 | 富士フイルム株式会社 | 薬液及び薬液収容体 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002148819A (ja) * | 2000-11-10 | 2002-05-22 | Toshiba Corp | フォトレジスト用現像液及びフォトレジストの現像方法 |
| JP4550126B2 (ja) | 2008-04-25 | 2010-09-22 | 東京エレクトロン株式会社 | エッチングマスク形成方法、エッチング方法、および半導体デバイスの製造方法 |
| JP5358369B2 (ja) | 2009-09-18 | 2013-12-04 | 富士フイルム株式会社 | レジストパターン形成方法及びそれに用いられる現像液 |
| JP2013061648A (ja) | 2011-09-09 | 2013-04-04 | Rohm & Haas Electronic Materials Llc | フォトレジスト上塗り組成物および電子デバイスを形成する方法 |
| KR102075960B1 (ko) | 2012-03-14 | 2020-02-11 | 제이에스알 가부시끼가이샤 | 포토레지스트 조성물, 레지스트 패턴 형성 방법, 산 확산 제어제 및 화합물 |
| JP5850873B2 (ja) | 2012-07-27 | 2016-02-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
| JP5836299B2 (ja) | 2012-08-20 | 2015-12-24 | 富士フイルム株式会社 | パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及びレジスト膜、並びに、これらを用いた電子デバイスの製造方法 |
| JP6002705B2 (ja) | 2013-03-01 | 2016-10-05 | 富士フイルム株式会社 | パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、電子デバイスの製造方法 |
| JP5676021B2 (ja) | 2014-01-06 | 2015-02-25 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
| CN106796405B (zh) * | 2014-09-30 | 2020-10-09 | 富士胶片株式会社 | 抗蚀剂膜的图案化用有机系处理液的制造方法 |
| US9644056B2 (en) | 2015-02-18 | 2017-05-09 | Sumitomo Chemical Company, Limited | Compound, resin and photoresist composition |
| JP6518475B2 (ja) | 2015-03-20 | 2019-05-22 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、酸発生剤及び化合物 |
| JP6427670B2 (ja) | 2015-07-01 | 2018-11-21 | 富士フイルム株式会社 | パターン形成方法、及び電子デバイスの製造方法 |
| JP6650509B2 (ja) | 2016-03-07 | 2020-02-19 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| KR102395705B1 (ko) | 2017-04-21 | 2022-05-09 | 후지필름 가부시키가이샤 | Euv광용 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| KR102537251B1 (ko) | 2018-06-28 | 2023-05-26 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법, 수지 |
| JP7076570B2 (ja) | 2018-09-25 | 2022-05-27 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| WO2020203621A1 (ja) * | 2019-03-29 | 2020-10-08 | 富士フイルム株式会社 | 処理液、パターン形成方法 |
-
2022
- 2022-08-19 WO PCT/JP2022/031332 patent/WO2023026969A1/ja not_active Ceased
- 2022-08-19 IL IL310843A patent/IL310843A/en unknown
- 2022-08-19 EP EP22861257.8A patent/EP4394510A4/en active Pending
- 2022-08-19 CN CN202280057487.XA patent/CN117836721A/zh active Pending
- 2022-08-19 JP JP2023543871A patent/JPWO2023026969A1/ja active Pending
- 2022-08-23 TW TW111131746A patent/TW202319531A/zh unknown
-
2024
- 2024-02-23 US US18/585,441 patent/US20240231236A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0566570A (ja) * | 1991-09-06 | 1993-03-19 | Nippon Telegr & Teleph Corp <Ntt> | レジスト現像液およびパタン形成方法 |
| JP2009025708A (ja) * | 2007-07-23 | 2009-02-05 | Fujifilm Corp | パターン形成方法 |
| WO2020071261A1 (ja) * | 2018-10-03 | 2020-04-09 | 富士フイルム株式会社 | 薬液及び薬液収容体 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023026969A1 (ja) | 2023-03-02 |
| US20240231236A1 (en) | 2024-07-11 |
| KR20240036064A (ko) | 2024-03-19 |
| TW202319531A (zh) | 2023-05-16 |
| EP4394510A1 (en) | 2024-07-03 |
| CN117836721A (zh) | 2024-04-05 |
| EP4394510A4 (en) | 2025-01-22 |
| IL310843A (en) | 2024-04-01 |
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