JPWO2023017650A1 - - Google Patents

Info

Publication number
JPWO2023017650A1
JPWO2023017650A1 JP2023541220A JP2023541220A JPWO2023017650A1 JP WO2023017650 A1 JPWO2023017650 A1 JP WO2023017650A1 JP 2023541220 A JP2023541220 A JP 2023541220A JP 2023541220 A JP2023541220 A JP 2023541220A JP WO2023017650 A1 JPWO2023017650 A1 JP WO2023017650A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023541220A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023017650A1 publication Critical patent/JPWO2023017650A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1463Pixel isolation structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14638Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023541220A 2021-08-13 2022-03-25 Pending JPWO2023017650A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021131981 2021-08-13
PCT/JP2022/014721 WO2023017650A1 (ja) 2021-08-13 2022-03-25 撮像装置及び電子機器

Publications (1)

Publication Number Publication Date
JPWO2023017650A1 true JPWO2023017650A1 (ja) 2023-02-16

Family

ID=85200163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023541220A Pending JPWO2023017650A1 (ja) 2021-08-13 2022-03-25

Country Status (5)

Country Link
JP (1) JPWO2023017650A1 (ja)
KR (1) KR20240038971A (ja)
CN (1) CN117546294A (ja)
TW (1) TW202308146A (ja)
WO (1) WO2023017650A1 (ja)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008060195A (ja) * 2006-08-30 2008-03-13 Nikon Corp 固体撮像装置およびその製造方法
US9543356B2 (en) * 2009-03-10 2017-01-10 Globalfoundries Inc. Pixel sensor cell including light shield
KR101845257B1 (ko) * 2011-02-07 2018-04-04 삼성전자주식회사 이미지 센서
CN104981906B (zh) * 2013-03-14 2018-01-19 索尼半导体解决方案公司 固态图像传感器、其制造方法和电子设备
FR3019379A1 (fr) * 2014-03-31 2015-10-02 St Microelectronics Crolles 2 Transistor a grille verticale et structure de pixel comprenant un tel transistor
KR102617389B1 (ko) * 2016-10-06 2023-12-26 에스케이하이닉스 주식회사 이미지 센서
JP2018174231A (ja) * 2017-03-31 2018-11-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器
JP2018190797A (ja) 2017-04-28 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
JPWO2019082546A1 (ja) * 2017-10-27 2020-11-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
US11069728B2 (en) * 2019-02-15 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Low noise vertical gate device structure
JPWO2020262199A1 (ja) * 2019-06-26 2020-12-30

Also Published As

Publication number Publication date
WO2023017650A1 (ja) 2023-02-16
KR20240038971A (ko) 2024-03-26
TW202308146A (zh) 2023-02-16
CN117546294A (zh) 2024-02-09

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