JPWO2023017640A1 - - Google Patents
Info
- Publication number
- JPWO2023017640A1 JPWO2023017640A1 JP2023541213A JP2023541213A JPWO2023017640A1 JP WO2023017640 A1 JPWO2023017640 A1 JP WO2023017640A1 JP 2023541213 A JP2023541213 A JP 2023541213A JP 2023541213 A JP2023541213 A JP 2023541213A JP WO2023017640 A1 JPWO2023017640 A1 JP WO2023017640A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021131982 | 2021-08-13 | ||
| PCT/JP2022/012067 WO2023017640A1 (ja) | 2021-08-13 | 2022-03-16 | 撮像装置及び電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023017640A1 true JPWO2023017640A1 (ja) | 2023-02-16 |
Family
ID=85199680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023541213A Pending JPWO2023017640A1 (ja) | 2021-08-13 | 2022-03-16 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2023017640A1 (ja) |
| KR (1) | KR20240038972A (ja) |
| CN (1) | CN117546296A (ja) |
| TW (1) | TW202308148A (ja) |
| WO (1) | WO2023017640A1 (ja) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102255183B1 (ko) * | 2014-02-21 | 2021-05-24 | 삼성전자주식회사 | 수직형 트랜지스터를 갖는 씨모스 이미지 센서 및 그 제조 방법 |
| JP2016136584A (ja) * | 2015-01-23 | 2016-07-28 | 株式会社東芝 | 固体撮像装置および固体撮像装置の製造方法 |
| JP2018190797A (ja) | 2017-04-28 | 2018-11-29 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および電子機器 |
| JP2020009883A (ja) * | 2018-07-06 | 2020-01-16 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、測距モジュール、および、電子機器 |
| JP2021005619A (ja) * | 2019-06-26 | 2021-01-14 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
-
2022
- 2022-03-16 WO PCT/JP2022/012067 patent/WO2023017640A1/ja active Application Filing
- 2022-03-16 KR KR1020247002805A patent/KR20240038972A/ko unknown
- 2022-03-16 JP JP2023541213A patent/JPWO2023017640A1/ja active Pending
- 2022-03-16 CN CN202280044302.1A patent/CN117546296A/zh active Pending
- 2022-03-18 TW TW111109993A patent/TW202308148A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN117546296A (zh) | 2024-02-09 |
| TW202308148A (zh) | 2023-02-16 |
| WO2023017640A1 (ja) | 2023-02-16 |
| KR20240038972A (ko) | 2024-03-26 |