JPWO2022259759A1 - - Google Patents

Info

Publication number
JPWO2022259759A1
JPWO2022259759A1 JP2023527552A JP2023527552A JPWO2022259759A1 JP WO2022259759 A1 JPWO2022259759 A1 JP WO2022259759A1 JP 2023527552 A JP2023527552 A JP 2023527552A JP 2023527552 A JP2023527552 A JP 2023527552A JP WO2022259759 A1 JPWO2022259759 A1 JP WO2022259759A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023527552A
Other versions
JPWO2022259759A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022259759A1 publication Critical patent/JPWO2022259759A1/ja
Publication of JPWO2022259759A5 publication Critical patent/JPWO2022259759A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/82—Connection of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
JP2023527552A 2021-06-08 2022-04-12 Pending JPWO2022259759A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021095574 2021-06-08
PCT/JP2022/017564 WO2022259759A1 (ja) 2021-06-08 2022-04-12 熱電変換素子、熱電変換モジュール、及び、熱電変換素子の製造方法

Publications (2)

Publication Number Publication Date
JPWO2022259759A1 true JPWO2022259759A1 (ja) 2022-12-15
JPWO2022259759A5 JPWO2022259759A5 (ja) 2024-05-13

Family

ID=84425888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023527552A Pending JPWO2022259759A1 (ja) 2021-06-08 2022-04-12

Country Status (4)

Country Link
US (1) US20240090332A1 (ja)
JP (1) JPWO2022259759A1 (ja)
CN (1) CN117461404A (ja)
WO (1) WO2022259759A1 (ja)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6225550B1 (en) * 1999-09-09 2001-05-01 Symyx Technologies, Inc. Thermoelectric material system
KR20030092692A (ko) * 2002-05-30 2003-12-06 이지환 열전소자와 전극이 일체화된 열전재료의 제조 방법
JP3930410B2 (ja) * 2002-09-27 2007-06-13 株式会社東芝 熱電素子モジュール及びその製造方法
JP2005093532A (ja) * 2003-09-12 2005-04-07 Toshiba Corp 熱電素子モジュール
US10323305B2 (en) * 2014-02-18 2019-06-18 University Of Houston System Thermoelectric compositions and methods of fabricating high thermoelectric performance MgAgSb-based materials
CN107078201B (zh) * 2015-10-27 2019-06-21 松下知识产权经营株式会社 热电转换材料
JP2019207983A (ja) * 2018-05-30 2019-12-05 パナソニックＩｐマネジメント株式会社 熱電変換材料及びこれを用いた熱電変換素子
CN110998882A (zh) * 2018-06-27 2020-04-10 松下知识产权经营株式会社 热电转换元件和热电转换模块

Also Published As

Publication number Publication date
US20240090332A1 (en) 2024-03-14
WO2022259759A1 (ja) 2022-12-15
CN117461404A (zh) 2024-01-26

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Legal Events

Date Code Title Description
A529 Written submission of copy of amendment under article 34 pct

Free format text: JAPANESE INTERMEDIATE CODE: A5211

Effective date: 20231110