JPWO2022190599A1 - - Google Patents

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Publication number
JPWO2022190599A1
JPWO2022190599A1 JP2023505140A JP2023505140A JPWO2022190599A1 JP WO2022190599 A1 JPWO2022190599 A1 JP WO2022190599A1 JP 2023505140 A JP2023505140 A JP 2023505140A JP 2023505140 A JP2023505140 A JP 2023505140A JP WO2022190599 A1 JPWO2022190599 A1 JP WO2022190599A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023505140A
Other languages
Japanese (ja)
Other versions
JP7719854B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of JPWO2022190599A1 publication Critical patent/JPWO2022190599A1/ja
Application granted granted Critical
Publication of JP7719854B2 publication Critical patent/JP7719854B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C59/00Compounds having carboxyl groups bound to acyclic carbon atoms and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
    • C07C59/01Saturated compounds having only one carboxyl group and containing hydroxy or O-metal groups
    • C07C59/115Saturated compounds having only one carboxyl group and containing hydroxy or O-metal groups containing halogen
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C61/00Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
    • C07C61/16Unsaturated compounds
    • C07C61/28Unsaturated compounds polycyclic
    • C07C61/29Unsaturated compounds polycyclic having a carboxyl group bound to a condensed ring system
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07JSTEROIDS
    • C07J9/00Normal steroids containing carbon, hydrogen, halogen or oxygen substituted in position 17 beta by a chain of more than two carbon atoms, e.g. cholane, cholestane, coprostane
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • General Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2023505140A 2021-03-09 2022-01-05 感放射線性樹脂組成物及びパターン形成方法 Active JP7719854B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021037161 2021-03-09
JP2021037161 2021-03-09
PCT/JP2022/000063 WO2022190599A1 (ja) 2021-03-09 2022-01-05 感放射線性樹脂組成物及びパターン形成方法

Publications (2)

Publication Number Publication Date
JPWO2022190599A1 true JPWO2022190599A1 (https=) 2022-09-15
JP7719854B2 JP7719854B2 (ja) 2025-08-06

Family

ID=83227235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023505140A Active JP7719854B2 (ja) 2021-03-09 2022-01-05 感放射線性樹脂組成物及びパターン形成方法

Country Status (3)

Country Link
JP (1) JP7719854B2 (https=)
TW (1) TW202246892A (https=)
WO (1) WO2022190599A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024115169A (ja) * 2023-02-14 2024-08-26 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014149409A (ja) * 2013-01-31 2014-08-21 Fujifilm Corp パターン形成方法、それに用いられる化合物、感活性光線性又は感放射線性樹脂組成物、及び、レジスト膜、電子デバイスの製造方法、並びに、電子デバイス
JP2017071720A (ja) * 2015-10-08 2017-04-13 日本パーカライジング株式会社 表面処理剤、皮膜及び表面処理方法
JP2017072843A (ja) * 2016-11-10 2017-04-13 Jsr株式会社 樹脂組成物及びレジストパターン形成方法
JP2021033026A (ja) * 2019-08-22 2021-03-01 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物
JP2021091666A (ja) * 2019-12-11 2021-06-17 信越化学工業株式会社 オニウム塩化合物、化学増幅レジスト組成物及びパターン形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021071720A (ja) * 2019-10-28 2021-05-06 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014149409A (ja) * 2013-01-31 2014-08-21 Fujifilm Corp パターン形成方法、それに用いられる化合物、感活性光線性又は感放射線性樹脂組成物、及び、レジスト膜、電子デバイスの製造方法、並びに、電子デバイス
JP2017071720A (ja) * 2015-10-08 2017-04-13 日本パーカライジング株式会社 表面処理剤、皮膜及び表面処理方法
JP2017072843A (ja) * 2016-11-10 2017-04-13 Jsr株式会社 樹脂組成物及びレジストパターン形成方法
JP2021033026A (ja) * 2019-08-22 2021-03-01 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物
JP2021091666A (ja) * 2019-12-11 2021-06-17 信越化学工業株式会社 オニウム塩化合物、化学増幅レジスト組成物及びパターン形成方法

Also Published As

Publication number Publication date
JP7719854B2 (ja) 2025-08-06
WO2022190599A1 (ja) 2022-09-15
TW202246892A (zh) 2022-12-01

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