JPWO2022176484A1 - - Google Patents
Info
- Publication number
- JPWO2022176484A1 JPWO2022176484A1 JP2023500644A JP2023500644A JPWO2022176484A1 JP WO2022176484 A1 JPWO2022176484 A1 JP WO2022176484A1 JP 2023500644 A JP2023500644 A JP 2023500644A JP 2023500644 A JP2023500644 A JP 2023500644A JP WO2022176484 A1 JPWO2022176484 A1 JP WO2022176484A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021023751 | 2021-02-17 | ||
| PCT/JP2022/001713 WO2022176484A1 (ja) | 2021-02-17 | 2022-01-19 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022176484A1 true JPWO2022176484A1 (https=) | 2022-08-25 |
Family
ID=82930777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023500644A Pending JPWO2022176484A1 (https=) | 2021-02-17 | 2022-01-19 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20230387322A1 (https=) |
| JP (1) | JPWO2022176484A1 (https=) |
| WO (1) | WO2022176484A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119783610B (zh) * | 2023-10-07 | 2025-10-17 | 中国科学院沈阳自动化研究所 | 抗辐照正方环栅mosfet半导体器件建模方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011142310A (ja) * | 2009-12-08 | 2011-07-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2012134472A (ja) * | 2010-11-30 | 2012-07-12 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2014007393A (ja) * | 2012-05-31 | 2014-01-16 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US20140231810A1 (en) * | 2013-02-21 | 2014-08-21 | Samsung Display Co., Ltd. | Thin film transistor and manufacturing method thereof |
| JP2018022879A (ja) * | 2016-07-20 | 2018-02-08 | 株式会社リコー | 電界効果型トランジスタ、及びその製造方法、並びに表示素子、画像表示装置、及びシステム |
| JP2020167235A (ja) * | 2019-03-28 | 2020-10-08 | 株式会社ジャパンディスプレイ | 半導体装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130087784A1 (en) * | 2011-10-05 | 2013-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
-
2022
- 2022-01-19 JP JP2023500644A patent/JPWO2022176484A1/ja active Pending
- 2022-01-19 WO PCT/JP2022/001713 patent/WO2022176484A1/ja not_active Ceased
-
2023
- 2023-08-15 US US18/449,830 patent/US20230387322A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011142310A (ja) * | 2009-12-08 | 2011-07-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2012134472A (ja) * | 2010-11-30 | 2012-07-12 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2014007393A (ja) * | 2012-05-31 | 2014-01-16 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US20140231810A1 (en) * | 2013-02-21 | 2014-08-21 | Samsung Display Co., Ltd. | Thin film transistor and manufacturing method thereof |
| JP2018022879A (ja) * | 2016-07-20 | 2018-02-08 | 株式会社リコー | 電界効果型トランジスタ、及びその製造方法、並びに表示素子、画像表示装置、及びシステム |
| JP2020167235A (ja) * | 2019-03-28 | 2020-10-08 | 株式会社ジャパンディスプレイ | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022176484A1 (ja) | 2022-08-25 |
| US20230387322A1 (en) | 2023-11-30 |
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