JPWO2022168214A1 - - Google Patents

Info

Publication number
JPWO2022168214A1
JPWO2022168214A1 JP2022575912A JP2022575912A JPWO2022168214A1 JP WO2022168214 A1 JPWO2022168214 A1 JP WO2022168214A1 JP 2022575912 A JP2022575912 A JP 2022575912A JP 2022575912 A JP2022575912 A JP 2022575912A JP WO2022168214 A1 JPWO2022168214 A1 JP WO2022168214A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022575912A
Other versions
JP7267518B2 (ja
JPWO2022168214A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022168214A1 publication Critical patent/JPWO2022168214A1/ja
Publication of JPWO2022168214A5 publication Critical patent/JPWO2022168214A5/ja
Application granted granted Critical
Publication of JP7267518B2 publication Critical patent/JP7267518B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
JP2022575912A 2021-02-04 2021-02-04 温度補償回路 Active JP7267518B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/004011 WO2022168214A1 (ja) 2021-02-04 2021-02-04 温度補償回路

Publications (3)

Publication Number Publication Date
JPWO2022168214A1 true JPWO2022168214A1 (ja) 2022-08-11
JPWO2022168214A5 JPWO2022168214A5 (ja) 2023-02-03
JP7267518B2 JP7267518B2 (ja) 2023-05-01

Family

ID=82740964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022575912A Active JP7267518B2 (ja) 2021-02-04 2021-02-04 温度補償回路

Country Status (4)

Country Link
US (1) US20230291362A1 (ja)
EP (1) EP4266577A4 (ja)
JP (1) JP7267518B2 (ja)
WO (1) WO2022168214A1 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11150424A (ja) * 1997-11-18 1999-06-02 Oki Electric Ind Co Ltd 電界効果トランジスタのゲートバイアス電圧印加回路と電界効果トランジスタのゲートバイアス電圧印加回路が搭載されている半導体装置
US6313705B1 (en) * 1999-12-20 2001-11-06 Rf Micro Devices, Inc. Bias network for high efficiency RF linear power amplifier
JP2003060444A (ja) * 2001-08-20 2003-02-28 Mitsubishi Electric Corp 増幅器用のバイアス回路および高周波電界効果トランジスタ増幅器
JP2009055438A (ja) * 2007-08-28 2009-03-12 Mitsubishi Electric Corp 温度補償バイアス回路、高周波増幅器及び高周波減衰器
KR20100025868A (ko) * 2008-08-28 2010-03-10 한국전자통신연구원 임계전압과 온도 및 공급 전원의 변화를 보상하기 위한 보상 바이어스 회로와, 그를 이용한 증폭기

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188653A (ja) 2001-12-20 2003-07-04 Hitachi Ltd 無線通信用電子部品および通信用半導体集積回路
JP2010114793A (ja) * 2008-11-10 2010-05-20 Japan Radio Co Ltd Ｆｅｔバイアス回路

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11150424A (ja) * 1997-11-18 1999-06-02 Oki Electric Ind Co Ltd 電界効果トランジスタのゲートバイアス電圧印加回路と電界効果トランジスタのゲートバイアス電圧印加回路が搭載されている半導体装置
US6313705B1 (en) * 1999-12-20 2001-11-06 Rf Micro Devices, Inc. Bias network for high efficiency RF linear power amplifier
JP2003060444A (ja) * 2001-08-20 2003-02-28 Mitsubishi Electric Corp 増幅器用のバイアス回路および高周波電界効果トランジスタ増幅器
JP2009055438A (ja) * 2007-08-28 2009-03-12 Mitsubishi Electric Corp 温度補償バイアス回路、高周波増幅器及び高周波減衰器
KR20100025868A (ko) * 2008-08-28 2010-03-10 한국전자통신연구원 임계전압과 온도 및 공급 전원의 변화를 보상하기 위한 보상 바이어스 회로와, 그를 이용한 증폭기

Also Published As

Publication number Publication date
JP7267518B2 (ja) 2023-05-01
US20230291362A1 (en) 2023-09-14
WO2022168214A1 (ja) 2022-08-11
EP4266577A4 (en) 2024-02-28
EP4266577A1 (en) 2023-10-25

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