JPWO2022163425A1 - - Google Patents
Info
- Publication number
- JPWO2022163425A1 JPWO2022163425A1 JP2022578259A JP2022578259A JPWO2022163425A1 JP WO2022163425 A1 JPWO2022163425 A1 JP WO2022163425A1 JP 2022578259 A JP2022578259 A JP 2022578259A JP 2022578259 A JP2022578259 A JP 2022578259A JP WO2022163425 A1 JPWO2022163425 A1 JP WO2022163425A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7408—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including alignment aids
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
- H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
- H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
- H10W46/607—Located on parts of packages, e.g. on encapsulations or on package substrates
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025085055A JP2025114860A (ja) | 2021-01-29 | 2025-05-21 | チップ付き基板の製造方法、及び基板処理装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021013785 | 2021-01-29 | ||
| JP2021013785 | 2021-01-29 | ||
| PCT/JP2022/001520 WO2022163425A1 (ja) | 2021-01-29 | 2022-01-18 | チップ付き基板の製造方法、及び基板処理装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025085055A Division JP2025114860A (ja) | 2021-01-29 | 2025-05-21 | チップ付き基板の製造方法、及び基板処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022163425A1 true JPWO2022163425A1 (https=) | 2022-08-04 |
| JP7688054B2 JP7688054B2 (ja) | 2025-06-03 |
Family
ID=82653344
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022578259A Active JP7688054B2 (ja) | 2021-01-29 | 2022-01-18 | チップ付き基板の製造方法、及び基板処理装置 |
| JP2025085055A Pending JP2025114860A (ja) | 2021-01-29 | 2025-05-21 | チップ付き基板の製造方法、及び基板処理装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025085055A Pending JP2025114860A (ja) | 2021-01-29 | 2025-05-21 | チップ付き基板の製造方法、及び基板処理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240079403A1 (https=) |
| JP (2) | JP7688054B2 (https=) |
| KR (1) | KR20230135615A (https=) |
| CN (1) | CN116783684A (https=) |
| WO (1) | WO2022163425A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12610845B2 (en) * | 2022-04-22 | 2026-04-21 | Tokyo Electron Limited | Method for forming semiconductor packages using dielectric alignment marks and laser liftoff process |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011049210A (ja) * | 2009-08-25 | 2011-03-10 | Seiko Epson Corp | 薄膜素子群の転写方法 |
| WO2012133760A1 (ja) * | 2011-03-30 | 2012-10-04 | ボンドテック株式会社 | 電子部品実装方法、電子部品実装システムおよび基板 |
| JP2014045013A (ja) * | 2012-08-24 | 2014-03-13 | Bondtech Inc | 基板上への対象物の位置決め方法及び装置 |
| JP2017041472A (ja) * | 2015-08-17 | 2017-02-23 | 株式会社ディスコ | 貼り合せ基板の加工方法 |
| JP2018125427A (ja) * | 2017-02-01 | 2018-08-09 | 株式会社ディスコ | 加工方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015046569A (ja) | 2013-07-31 | 2015-03-12 | マイクロン テクノロジー, インク. | 半導体装置の製造方法 |
-
2022
- 2022-01-18 US US18/261,898 patent/US20240079403A1/en active Pending
- 2022-01-18 JP JP2022578259A patent/JP7688054B2/ja active Active
- 2022-01-18 WO PCT/JP2022/001520 patent/WO2022163425A1/ja not_active Ceased
- 2022-01-18 CN CN202280010534.5A patent/CN116783684A/zh active Pending
- 2022-01-18 KR KR1020237027803A patent/KR20230135615A/ko active Pending
-
2025
- 2025-05-21 JP JP2025085055A patent/JP2025114860A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011049210A (ja) * | 2009-08-25 | 2011-03-10 | Seiko Epson Corp | 薄膜素子群の転写方法 |
| WO2012133760A1 (ja) * | 2011-03-30 | 2012-10-04 | ボンドテック株式会社 | 電子部品実装方法、電子部品実装システムおよび基板 |
| JP2014045013A (ja) * | 2012-08-24 | 2014-03-13 | Bondtech Inc | 基板上への対象物の位置決め方法及び装置 |
| JP2017041472A (ja) * | 2015-08-17 | 2017-02-23 | 株式会社ディスコ | 貼り合せ基板の加工方法 |
| JP2018125427A (ja) * | 2017-02-01 | 2018-08-09 | 株式会社ディスコ | 加工方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2025114860A (ja) | 2025-08-05 |
| US20240079403A1 (en) | 2024-03-07 |
| JP7688054B2 (ja) | 2025-06-03 |
| CN116783684A (zh) | 2023-09-19 |
| KR20230135615A (ko) | 2023-09-25 |
| WO2022163425A1 (ja) | 2022-08-04 |
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