JPWO2022113194A1 - - Google Patents
Info
- Publication number
- JPWO2022113194A1 JPWO2022113194A1 JP2022564875A JP2022564875A JPWO2022113194A1 JP WO2022113194 A1 JPWO2022113194 A1 JP WO2022113194A1 JP 2022564875 A JP2022564875 A JP 2022564875A JP 2022564875 A JP2022564875 A JP 2022564875A JP WO2022113194 A1 JPWO2022113194 A1 JP WO2022113194A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34373—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AsP
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2020/043785 WO2022113194A1 (ja) | 2020-11-25 | 2020-11-25 | 半導体構造および半導体素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2022113194A1 true JPWO2022113194A1 (ja) | 2022-06-02 |
Family
ID=81754075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022564875A Pending JPWO2022113194A1 (ja) | 2020-11-25 | 2020-11-25 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20240006856A1 (ja) |
JP (1) | JPWO2022113194A1 (ja) |
WO (1) | WO2022113194A1 (ja) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7142342B2 (en) * | 2003-06-02 | 2006-11-28 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Electroabsorption modulator |
JP4517653B2 (ja) * | 2004-01-29 | 2010-08-04 | 住友電気工業株式会社 | 光半導体デバイス |
JP2005286032A (ja) * | 2004-03-29 | 2005-10-13 | Sumitomo Electric Ind Ltd | 光半導体デバイス、および光半導体デバイスを製造する方法 |
US6933539B1 (en) * | 2004-05-17 | 2005-08-23 | Corning Incorporated | Tunnel junctions for long-wavelength VCSELs |
JP5016261B2 (ja) * | 2006-06-19 | 2012-09-05 | 日本オプネクスト株式会社 | 半導体光素子 |
JP4894576B2 (ja) * | 2007-03-16 | 2012-03-14 | 三菱電機株式会社 | 半導体光素子の製造方法 |
JP5093063B2 (ja) * | 2008-11-11 | 2012-12-05 | 住友電気工業株式会社 | 集積化半導体光素子及び半導体光装置 |
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2020
- 2020-11-25 US US18/251,925 patent/US20240006856A1/en active Pending
- 2020-11-25 JP JP2022564875A patent/JPWO2022113194A1/ja active Pending
- 2020-11-25 WO PCT/JP2020/043785 patent/WO2022113194A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20240006856A1 (en) | 2024-01-04 |
WO2022113194A1 (ja) | 2022-06-02 |
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