JPWO2022102711A1 - - Google Patents
Info
- Publication number
- JPWO2022102711A1 JPWO2022102711A1 JP2022562175A JP2022562175A JPWO2022102711A1 JP WO2022102711 A1 JPWO2022102711 A1 JP WO2022102711A1 JP 2022562175 A JP2022562175 A JP 2022562175A JP 2022562175 A JP2022562175 A JP 2022562175A JP WO2022102711 A1 JPWO2022102711 A1 JP WO2022102711A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020188351 | 2020-11-11 | ||
JP2020188351 | 2020-11-11 | ||
PCT/JP2021/041540 WO2022102711A1 (ja) | 2020-11-11 | 2021-11-11 | 半導体装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2022102711A1 true JPWO2022102711A1 (ja) | 2022-05-19 |
JP7501663B2 JP7501663B2 (ja) | 2024-06-18 |
Family
ID=81601203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022562175A Active JP7501663B2 (ja) | 2020-11-11 | 2021-11-11 | 半導体装置および半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230041042A1 (ja) |
JP (1) | JP7501663B2 (ja) |
CN (1) | CN115516642A (ja) |
DE (1) | DE112021001383T5 (ja) |
WO (1) | WO2022102711A1 (ja) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107710417B (zh) | 2015-06-16 | 2021-06-11 | 三菱电机株式会社 | 半导体装置的制造方法 |
JP6428945B2 (ja) * | 2015-09-16 | 2018-11-28 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6756376B2 (ja) | 2016-11-16 | 2020-09-16 | 富士電機株式会社 | 半導体装置 |
DE112019001123B4 (de) | 2018-10-18 | 2024-03-28 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren davon |
DE112019001741T5 (de) | 2018-11-16 | 2020-12-17 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren |
DE112019001738T5 (de) | 2018-11-16 | 2020-12-17 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren |
DE112019002290T5 (de) | 2018-12-28 | 2021-04-08 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und verfahren zum herstellen |
-
2021
- 2021-11-11 WO PCT/JP2021/041540 patent/WO2022102711A1/ja active Application Filing
- 2021-11-11 JP JP2022562175A patent/JP7501663B2/ja active Active
- 2021-11-11 DE DE112021001383.1T patent/DE112021001383T5/de active Pending
- 2021-11-11 CN CN202180030637.3A patent/CN115516642A/zh active Pending
-
2022
- 2022-10-20 US US17/970,501 patent/US20230041042A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20230041042A1 (en) | 2023-02-09 |
WO2022102711A1 (ja) | 2022-05-19 |
CN115516642A (zh) | 2022-12-23 |
JP7501663B2 (ja) | 2024-06-18 |
DE112021001383T5 (de) | 2022-12-15 |
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